Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Frequency Current gain Capacity Accuracy Working current, A Material Number of windings Plug or socket Number of contacts Mechanical installation Type Appointment Series Inductance Diode design
22977 СНГ
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor silicon mesaepitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP NPN 60Вт 100 pieces. 100В 10А 3МГц 12
22975 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Amplifying silicon mesaepitaxial-planar structure pnp transistor. Designed for use in amplifiers, converters and pulse devices. 2.5 TO220 Bipolar DIP PNP 25Вт 100 pieces. 45В 1МГц 100
22974 СНГ
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistor silicon epitaxial-planar structure npn generator. Designed for use in power amplifiers, frequency multipliers and self-oscillators at frequencies above 100 MHz with a supply voltage of 28 V. 5 КТ-4-2 Bipolar Screw NPN 2.5Вт 50pcs 65В 400мА 350МГц 15
22971 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 50
22969 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 TO220 Bipolar DIP NPN 30Вт 100 pieces. 70В 20МГц 25
22843 СНГ
43 грн.
23/50(with handle)x36x25mm; 220Vac; 4A A set of parts, board, diagram. 16 DIP 1 PC.
22838 СНГ
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
Silicon planar field-effect transistors with an insulated gate and an induced p-type channel. Designed for use in the input stages of low-noise amplifiers, nonlinear low-signal circuits, stages with high input impedance. 0.43 КТ-14 Field DIP MOS p-channel 20В 15мА 200мВт 100 pieces.
СНГ
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN 150мВт 800 pcs. 35В 100мА 250МГц 350
23557 СНГ
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN 150мВт 800 pcs. 40В 100мА 250МГц 90
22798 СНГ
3.50 грн.
10+3,32 грн.
50+3,15 грн.
100+2,80 грн.
Transistors silicon epitaxial-planar structures p-p-p amplifying with non-normalized noise figure at a frequency of 1 kHz. 0.3 TO92 Bipolar DIP NPN 150мВт 200pcs 20В 20мА 10МГц 60
22797 СНГ
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Transistors silicon planar structures npn universal. 0.7 TO126 Bipolar DIP NPN 1.2Вт 200pcs 150В 50МГц 480
22796 СНГ
3.50 грн.
10+3,32 грн.
50+3,15 грн.
100+2,80 грн.
Transistors silicon planar structures npn universal. 0.7 TO126 Bipolar DIP NPN 1.2Вт 200pcs 60В 50МГц 480
22784 СНГ
130 грн.
50+117 грн.
200+104 грн.
500+91 грн.
Fast recovery silicon diffusion diode. 110 Cooler 700V 160А Rectifier 6pcs single
22781 СНГ
27 грн.
Material: microwave glass-ceramic. Application: - for the manufacture of thick and thin-film integrated circuits and microwave integrated circuits (operating in the microwave range). - to isolate current-carrying parts that require cooling from radiators (it is desirable to use heat-conducting pastes or adhesives) Dimensions: 60x48x0.5 mm Processing: - one-sided polishing Density, kg/m3: 2500 Dielectric constant (E) at 10 GHz: 9.7-10 Dissipation Tangent (tgo) at 10 GHz: 0.0005 ТКе in the range of 20-80С at a frequency of 10 GHz: +60 Ultimate strength in static bending, MPa: 100 Coefficient of linear thermal expansion L,10-7 С-1: 32 Thermal conductivity coefficient at 1000С, W/m 0С: 1.67 5 100 pieces.
СНГ
2.50 грн.
Choke DM-0.4-125 (ax.) 125 μH 400mA 1.3 DIP 140pcs 0.4 1 Дроссель ДМ 125uH
22645 СНГ
4 грн.
20+3,60 грн.
50+3,20 грн.
100+3 грн.
200+2,80 грн.
Material ceramic Rated voltage, V 250 Rated operating current, A 2 Case length, mm 15 Case diameter, mm 4 Operating temperature, С -60…100 0.3 250 4 15 DIP 100 pieces. 2 Ceramics
22441 СНГ
14 грн.
Capacitors are polystyrene metallized sealed in a cylindrical metal case with unidirectional terminals filled with epoxy compound, single-layer. They have stable electrical characteristics, incl. high capacitance stability over the entire operating temperature range, low dielectric absorption coefficient. They have high reliability. They are used for operation in DC, AC, pulsating current circuits and in pulsed modes. Designed for printed wiring. 4.5 Flexible Leads 160 DIP 40pcs 100nF (0.1µF) 2 %
22438 СНГ
320 грн.
Piezoelectric filter 8448 kHz. 2 DIP 20pcs 8.448MHz
22434 СНГ
60 грн.
10+57 грн.
20+54 грн.
50+51 грн.
100+48 грн.
Designed for operation in electric circuits of direct, alternating (frequency up to 3 MHz) and pulsed currents. 25 DIP 50pcs Socket 32 per wire RS
22433 СНГ
40 грн.
10+38 грн.
20+36 грн.
50+34 грн.
100+32 грн.
Designed for operation in electric circuits of direct, alternating (frequency up to 3 MHz) and pulsed currents. 16 DIP 50pcs Socket 32 To the body RS
22432 СНГ
29 грн.
10+27,55 грн.
20+26,10 грн.
50+24,65 грн.
100+23,20 грн.
Designed to operate in low-frequency electrical circuits of direct current, alternating and pulsed currents with a frequency of up to 3 MHz and pulsed currents at voltages up to 400 V, in high-frequency circuits with a frequency of up to 10 GHz at voltages up to 100 V. 16 DIP 50pcs Socket 23 To the body RP
22431 СНГ
29 грн.
10+27,55 грн.
20+26,10 грн.
50+24,65 грн.
100+23,20 грн.
Designed to operate in low-frequency electrical circuits of direct current, alternating and pulsed currents with a frequency of up to 3 MHz and pulsed currents at voltages up to 400 V, in high-frequency circuits with a frequency of up to 10 GHz at voltages up to 100 V. 16 DIP 50pcs Socket 23 To the body RP
22430 СНГ
32 грн.
10+30,40 грн.
20+28,80 грн.
50+27,20 грн.
100+25,60 грн.
Designed to operate in low-frequency electrical circuits of direct current, alternating and pulsed currents with a frequency of up to 3 MHz and pulsed currents at voltages up to 400 V, in high-frequency circuits with a frequency of up to 10 GHz at voltages up to 100 V. 16 DIP 40pcs Fork 15 per wire RP
22429 СНГ
28 грн.
10+26,60 грн.
20+25,20 грн.
50+23,80 грн.
100+22,40 грн.
Designed to operate in low-frequency electrical circuits of direct current, alternating and pulsed currents with a frequency of up to 3 MHz and pulsed currents at voltages up to 400 V, in high-frequency circuits with a frequency of up to 10 GHz at voltages up to 100 V 11 DIP 50pcs Socket 15 To the body RP
22428 СНГ
14 грн.
10+13,30 грн.
20+12,60 грн.
50+11,90 грн.
100+11,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 DIP 80pcs Socket 11 To the body RP
22426 СНГ
56 грн.
10+53,20 грн.
20+50,40 грн.
50+47,60 грн.
100+44,80 грн.
Designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) currents. 50 DIP 20pcs Fork 50 To the body RMG
22425 СНГ
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Four germanium diffusion-alloy p-p-p switching high-frequency low-power transistors. 1.5 DIP Transistor Assembly 40pcs
22424 СНГ
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
Diode 3A539A arsenidogallium, epitaxial, with a Schottky barrier, microwave, pulsed. It is intended for application in pulse devices of nanosecond range. Available in a plastic case with flexible leads. 0.2 DIP Microwave 24pcs single
22419 СНГ
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Two four-bit shift registers with serial input and parallel output. 0.7 SO16 SMD Logics 100 pieces.
22416 СНГ
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Multipurpose register (8x4 bits). 1.1 SO24 SMD Logics 100 pieces.