Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Height (length), mm | Outside diameter, mm | Inner diameter, mm | Permeability | Core type | Material | Clearance mm |
|---|
Chip 589IR12
#14489
|
26704 | СНГ | 102 шт |
30 грн.
|
|
5 Acceptance. Multi-mode buffer register and is designed to connect various external devices of a microprocessor computing device using a single data highway. | 3.7 | — | DIP24 | — | — | — | — | DIP | Logics | — | — | — | — | 36pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Chip TDA4555 (=174x32)
#14487
|
26701 | СНГ | 1 шт |
30 грн.
|
|
The TDA4555 chip is a multi-standard color difference decoder. Designed to work in the color block in color TVs of the fourth and fifth generations as a color processor. Provides decoding of color information systems PAL, SECAM, NTSC (3.58 MHz), NTSC (4.43 MHz). Carries out the identification of standards with automatic switching to the accepted standard. | 4 | — | DIP28 | — | — | — | — | DIP | TV | — | — | — | — | 36pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Zener diode KS531V1
#14486
|
26698 | СНГ | 2850 шт |
3 грн.
|
|
Zener diodes KS531V1 silicon, diffusion-alloy, medium power. Designed for use as 31.0 V reference voltage sources. The main technical parameters of the KS531V1 zener diode: • Rated stabilization voltage: 31 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1%; • Zener diode differential resistance: 90 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -50... +100 °С. | 0.3 | — | — | — | — | — | — | DIP | — | — | — | — | 500мВт | 1000pcs | — | — | — | — | — | — | — | — | 31V | TO-92-2 | — | — | — | — | — | — | — | ||||||||||||
Transistor KT3101AM
#14485
|
26697 | СНГ | 352 шт |
15 грн.
|
|
KT3101A-2 transistors are silicon epitaxial-planar npn amplifying structures with a normalized noise figure at frequencies of 1 and 2.25 GHz. Designed for use in the input and subsequent stages of microwave amplifiers. The main technical characteristics of the transistor KT3101AM: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 100 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 4000 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 15 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 2.5 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.5 μA (15V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 35...300; • Sk - Collector junction capacitance: no more than 1.5 pF; • Ksh - Transistor noise figure: no more than 4.5 dB at a frequency of 2.25 GHz • tk - Time constant of the feedback circuit at high frequency: no more than 10 ps. | 0.25 | — | — | — | — | КТ-14 | Bipolar | SMD | — | NPN | — | — | 100мВт | 20pcs | 15В | 20мА | 4ГГц | 300 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Zener diode KS407A
#14482
|
26694 | СНГ | 927 шт |
2 грн.
|
|
Zener diodes KS407A silicon, planar, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 1...100 mA. The main technical parameters of the KS407A zener diode: • Rated stabilization voltage: 3.3 V at Ist 20 mA; • Stabilization voltage spread: 3.1... 3.5 V; • Zener diode differential resistance: 28 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.2 | — | — | — | — | — | — | DIP | — | — | — | — | 500мВт | 400pcs | — | — | — | — | — | — | — | — | 3V3 | kd2 | — | — | — | — | — | — | — | ||||||||||||
Zener diode KS508A
#14481
|
26693 | СНГ | 771 шт |
2 грн.
|
|
Zener diodes KS508A silicon, planar, medium power. Designed to stabilize the nominal voltage of 12.0 V in the stabilization current range of 0.25...23.0 mA. The main technical parameters of the KS508A zener diode: • Rated stabilization voltage: 12 V at Ist 10.5 mA; • Temperature coefficient of stabilization voltage: ±0.11%/°С; • Minimum allowable stabilization current: 0.25 mA; • Maximum allowable stabilization current: 23 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +85 °С. | 0.2 | — | — | — | — | — | — | DIP | — | — | — | — | 500мВт | 400pcs | — | — | — | — | — | — | — | — | 12V | kd2 | — | — | — | — | — | — | — | ||||||||||||
Chip KR185RU9
#14480
|
26692 | СНГ | 58 шт |
31 грн.
|
|
RAM with a capacity of 576 bits (64x9p). | 4 | — | DIP28 | — | — | — | — | DIP | Memory | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Transistor GT320A
#14473
|
26684 | СНГ | 23 шт |
10 грн.
|
|
Transistors GT320A germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. | 1.8 | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | PNP | — | — | 200мВт | 100 pieces. | 12В | 150мА | 80МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
| 26683 | СНГ | 13883 шт |
1.50 грн.
|
|
Resistor C2-23-1 220 kOhm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 220 кОм | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
Transistor MP13
#14471
|
26682 | СНГ | 645 шт |
8 грн.
|
|
Transistors MP13 germanium alloy pnp universal low-frequency low-power. Designed for amplification of small low frequency signals, amplification, switching, pulse shaping, applications in ferrite transistor cells. The main technical characteristics of the MP13 transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 0.5 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 25...55; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 20мА | 0,5МГц | 12 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
| 26681 | СНГ | 2001 шт |
1.50 грн.
|
|
Resistor C2-23-1 820 kOhm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 820 кОм | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
| 26680 | СНГ | 1758 шт |
1.50 грн.
|
|
Resistor C2-23-1 75 kOhm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 75 кОм | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
| 26679 | СНГ | 490 шт |
1.50 грн.
|
|
Resistor C2-23-1 27 Ohm (+/-10%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 27 Ом | 1 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
| 26678 | СНГ | 1435 шт |
1.50 грн.
|
|
Resistor C2-23-1 27 Ohm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 27 Ом | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
| 26677 | СНГ | 1888 шт |
1.50 грн.
|
|
Resistor C2-23-1 1.3 Ohm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 1,3 Ом | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
| 26676 | СНГ | 1160 шт |
1.50 грн.
|
|
Resistor C2-23-1 1 Ohm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | 500pcs | — | — | — | — | 1,0 Ом | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | — | |||||||||||||
Transistor KP303I Ni
#14463
|
26675 | СНГ | 1980 шт |
11 грн.
|
|
KP303I silicon epitaxial-planar field transistors with a gate based on a pn junction and an n-type channel. The main technical characteristics of the KP303I transistor: • Transistor structure: with pn-junction and n-channel; • Rsi max - Power dissipation drain-source: 200 mW; • Uzi ots - Transistor cutoff voltage - voltage between gate and source: 0.5... 2 V; • Usi max - Maximum drain-source voltage: 25 V; • Uzs max - Maximum gate-drain voltage: 30 V; • Uzi max - Maximum gate-source voltage: 30 V; • Ic - Drain current (constant): 20 mA; • Ic start - Initial drain current: 1.5...5 mA; • S - Slope of characteristic: 2... 6 mA/V; • C11i - Transistor input capacitance - capacitance between gate and source: no more than 6 pF; • C12i - Feedback capacitance in a circuit with a common source in case of a short circuit at the AC input: no more than 2 pF. | 0.4 | — | — | — | — | КТ-1 | Field | DIP | — | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
| 26671 | СНГ | 141 шт |
14 грн.
|
|
M400NN, K32x20x7, Ring ferrite core. | 17.5 | — | — | — | — | — | — | — | — | — | — | — | — | 288pcs. | — | — | — | — | — | — | — | — | — | — | 7 | 32 | 20 | М400НН | Ring | Ferrite | — | |||||||||||||
| 26669 | СНГ | 643 шт |
18 грн.
|
|
M3000NM, K38x24x7, Ring ferrite core. | 22 | — | — | — | — | — | — | — | — | — | — | — | — | 154pcs | — | — | — | — | — | — | — | — | — | — | 7 | 38 | 24 | М3000НМ | — | Ferrite | — | |||||||||||||
| 26667 | СНГ | 859 шт |
14 грн.
|
|
M600NN-13, K21x9x13 (PYa7178535-04), Ferrite ring core. | 17.5 | — | — | — | — | — | — | — | — | — | — | — | — | 54pcs | — | — | — | — | — | — | — | — | — | — | 13 | 21 | 9 | М600НН | Ring | Ferrite | — | |||||||||||||
| 26666 | СНГ | 4 шт |
72 грн.
|
|
ETD44/22/15 M2500NMS1 gap 2mm. Ferrite core (set). | 90 | — | — | — | — | — | — | — | — | — | — | — | — | 63pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | М2500НМ | ETD | Ferrite | 2 | |||||||||||||
| 26665 | СНГ | 2017 шт |
72 грн.
|
|
ETD44/22/15 M2500NMS1 gap 1mm. Ferrite core (set). | 90 | — | — | — | — | — | — | — | — | — | — | — | — | 63pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | М2500НМ | ETD | Ferrite | 1 | |||||||||||||
| 26664 | СНГ | 57 шт |
60 грн.
|
|
M900NM, S15x100, Ferrite core with a flat surface. | 75 | — | — | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | 97 | 15 | — | М900НМ | Kernel | Ferrite | — | |||||||||||||
| 26663 | СНГ | 186 шт |
18 грн.
|
|
M100NN-4, K32x20x6, Ring ferrite core. | 15 | — | — | — | — | — | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | 6 | 32 | 20 | М100НН | Ring | Ferrite | — | |||||||||||||
| 26662 | СНГ | 4112 шт |
6 грн.
|
|
M600NN, K15x5.5x11, Ring ferrite core. | 8 | — | — | — | — | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | 11 | 15 | 5,5 | М600НН | Ring | Ferrite | — | |||||||||||||
| 26661 | СНГ | 3385 шт |
14 грн.
|
|
M6000NM, K25x14.5x10, Ring ferrite core. | 16 | — | — | — | — | — | — | — | — | — | — | — | — | 288pcs. | — | — | — | — | — | — | — | — | — | — | 10 | 25 | 14,5 | М6000НМ | Ring | Ferrite | — | |||||||||||||
Chip KR145IP16B
#14443
|
26655 | СНГ | 100 шт |
20 грн.
|
|
A circuit that implements a set of mathematical operations for a microcalculator. | 4.2 | — | — | — | — | — | — | SMD | Microcontrollers | — | — | — | — | 70pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Chip KR505RE3 0111
#14442
|
26654 | СНГ | 126 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | Memory | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Chip KR505RE3 0110
#14441
|
26653 | СНГ | 158 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | Memory | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
Chip KR505RE3 0085
#14440
|
26652 | СНГ | 2 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | Memory | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
