Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Diode design | Height (length), mm | Outside diameter, mm | Inner diameter, mm | Permeability | Core type | Material | Clearance mm |
|---|
| 26677 | СНГ | 1888 шт |
1.50 грн.
|
|
Resistor C2-23-1 1.3 Ohm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | 1,3 Ом | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | |||||||||||
| 26676 | СНГ | 1160 шт |
1.50 грн.
|
|
Resistor C2-23-1 1 Ohm (+/-5%) 1W. | 1.2 | Flexible Leads | — | 6 | 12 | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | 1,0 Ом | 1 W | 5 % | metal film | — | — | — | — | — | — | — | — | |||||||||||
|
Transistor KP303I Ni
#14463
|
26675 | СНГ | 1940 шт |
11 грн.
|
|
KP303I silicon epitaxial-planar field transistors with a gate based on a pn junction and an n-type channel. The main technical characteristics of the KP303I transistor: • Transistor structure: with pn-junction and n-channel; • Rsi max - Power dissipation drain-source: 200 mW; • Uzi ots - Transistor cutoff voltage - voltage between gate and source: 0.5... 2 V; • Usi max - Maximum drain-source voltage: 25 V; • Uzs max - Maximum gate-drain voltage: 30 V; • Uzi max - Maximum gate-source voltage: 30 V; • Ic - Drain current (constant): 20 mA; • Ic start - Initial drain current: 1.5...5 mA; • S - Slope of characteristic: 2... 6 mA/V; • C11i - Transistor input capacitance - capacitance between gate and source: no more than 6 pF; • C12i - Feedback capacitance in a circuit with a common source in case of a short circuit at the AC input: no more than 2 pF. | 0.4 | — | — | — | — | КТ-1 | Field | DIP | — | — | — | — | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 26671 | СНГ | 133 шт |
18 грн.
|
|
M400NN, K32x20x7, Ring ferrite core. | 17.5 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 288pcs. | — | — | — | — | — | — | — | — | — | 7 | 32 | 20 | М400НН | Ring | Ferrite | — | |||||||||||
| 26669 | СНГ | 643 шт |
22 грн.
|
|
M3000NM, K38x24x7, Ring ferrite core. | 22 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 154pcs | — | — | — | — | — | — | — | — | — | 7 | 38 | 24 | М3000НМ | — | Ferrite | — | |||||||||||
| 26667 | СНГ | 849 шт |
18 грн.
|
|
M600NN-13, K21x9x13 (PYa7178535-04), Ferrite ring core. | 17.5 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 54pcs | — | — | — | — | — | — | — | — | — | 13 | 21 | 9 | М600НН | Ring | Ferrite | — | |||||||||||
| 26666 | СНГ | 4 шт |
72 грн.
|
|
ETD44/22/15 M2500NMS1 gap 2mm. Ferrite core (set). | 90 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 63pcs | — | — | — | — | — | — | — | — | — | — | — | — | М2500НМ | ETD | Ferrite | 2 | |||||||||||
| 26665 | СНГ | 2017 шт |
72 грн.
|
|
ETD44/22/15 M2500NMS1 gap 1mm. Ferrite core (set). | 90 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 63pcs | — | — | — | — | — | — | — | — | — | — | — | — | М2500НМ | ETD | Ferrite | 1 | |||||||||||
| 26664 | СНГ | 57 шт |
60 грн.
|
|
M900NM, S15x100, Ferrite core with a flat surface. | 75 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | 97 | 15 | — | М900НМ | Kernel | Ferrite | — | |||||||||||
| 26663 | СНГ | 186 шт |
18 грн.
|
|
M100NN-4, K32x20x6, Ring ferrite core. | 15 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | 6 | 32 | 20 | М100НН | Ring | Ferrite | — | |||||||||||
| 26662 | СНГ | 4112 шт |
10 грн.
|
|
M600NN, K15x5.5x11, Ring ferrite core. | 8 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | 11 | 15 | 5,5 | М600НН | Ring | Ferrite | — | |||||||||||
| 26661 | СНГ | 3361 шт |
16 грн.
|
|
M6000NM, K25x14.5x10, Ring ferrite core. | 16 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 288pcs. | — | — | — | — | — | — | — | — | — | 10 | 25 | 14,5 | М6000НМ | Ring | Ferrite | — | |||||||||||
|
Chip KR145IP16B
#14443
|
26655 | СНГ | 100 шт |
20 грн.
|
|
A circuit that implements a set of mathematical operations for a microcalculator. | 4.2 | — | — | — | — | — | — | SMD | — | — | Microcontrollers | — | — | — | — | — | 70pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR505RE3 0111
#14442
|
26654 | СНГ | 126 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR505RE3 0110
#14441
|
26653 | СНГ | 158 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR505RE3 0085
#14440
|
26652 | СНГ | 2 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR505RE3 0009
#14439
|
26651 | СНГ | 138 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | — | SO24 | — | — | — | — | SMD | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip K145HK4P
#14437
|
26648 | СНГ | 32 шт |
20 грн.
|
Control device. | 4 | — | — | — | — | — | — | DIP | — | — | Interfaces | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
|
Chip K145VV8P
#14436
|
26647 | СНГ | 46 шт |
20 грн.
|
The device for inputting the eight most significant digits, adding, subtracting, preparing operands for performing multiplication, division, calculating using the memory register and clearing it, calculating the percentage of a number, displaying the eight most significant digits, the sign and number of digits fixed after the decimal point of 16-bit integer and decimal numbers, signs of overflow and memory occupancy. | 4 | — | — | — | — | — | — | DIP | — | — | Interfaces | — | — | — | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
|
Chip KR145IR2
#14435
|
26645 | СНГ | 260 шт |
20 грн.
|
|
Dynamic shift register 1024/1008 bits. | 2.8 | — | DIP24 | — | — | — | — | DIP | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip K145HK3P
#14431
|
26640 | СНГ | 105 шт |
20 грн.
|
|
Input device. | 3.5 | — | — | — | — | — | — | DIP | — | — | Interfaces | — | — | — | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR145IR1
#14429
|
26638 | СНГ | 186 шт |
20 грн.
|
|
Dynamic shift register 1024/1008 bits. | 2.8 | — | DIP24 | — | — | — | — | DIP | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip K145IK11P
#14425
|
26634 | СНГ | 122 шт |
20 грн.
|
|
Scheme of management of storage devices (memory). | 3.2 | — | — | — | — | — | — | DIP | — | — | Interfaces | — | — | — | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip K145IK8P
#14424
|
26633 | СНГ | 45 шт |
20 грн.
|
|
Electronic dialer. | 3.2 | — | — | — | — | — | — | DIP | — | — | Telephony | — | — | — | — | — | 32pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT382AM
#14423
|
26632 | СНГ | 28 шт |
8 грн.
|
|
KT382AM transistors are silicon epitaxial planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of high and microwave amplifiers. | 0.25 | — | — | — | — | КТ-14 | Bipolar | SMD | — | — | — | — | NPN | — | — | 100мВт | 20pcs | 10В | 20мА | 1.8ГГц | 330 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT680A
#14422
|
26631 | СНГ | 422 шт |
5 грн.
|
|
Transistor KT680A silicon epitaxial-planar structure npn amplifying. Designed for use in low frequency amplifiers. | 0.3 | — | — | — | — | TO92 | Bipolar | DIP | — | — | — | — | NPN | — | — | 350мВт | 1000pcs | 25В | 600мА | 120МГц | 300 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Diode KD208A (green drop)
#14415
|
26624 | СНГ | 1866 шт |
1 грн.
|
|
Diodes KD208A silicon, diffusion, rectifier. Designed to convert alternating voltage with a frequency of up to 1.0 kHz. The main technical characteristics of the KD208A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 1.5 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 100 V. | 0.3 | — | — | — | — | — | — | DIP | 100V | 1.5A | — | Rectifier | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | single | — | — | — | — | — | — | — | ||||||||||
|
Transistor P304M
#14411
|
26619 | СНГ | 1 шт |
13 грн.
|
|
Transistors P304M silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 2.5 | — | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | PNP | — | — | 10Вт | 20pcs | 50В | 500мА | 0,05МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 26616 | СНГ | 681 шт |
5 грн.
|
|
Resistors C5-16MV constant wire, precision, low-resistance small-sized insulated, for surface mounting. | 2.5 | Flexible Leads | — | 9 | 19 | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | 2 Ом | — | 1 % | — | — | — | — | — | — | — | — | — | |||||||||||
| 26615 | СНГ | 1226 шт |
5 грн.
|
|
Resistors C5-16MV constant wire, precision, low-resistance small-sized insulated, for surface mounting. | 2.5 | Flexible Leads | — | 9 | 19 | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | 2 Ом | — | 5 % | — | — | — | — | — | — | — | — | — |