Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Working voltage, V Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Capacity Accuracy Stabilization voltage Zener diode housing type Plug or socket Number of contacts Mechanical installation Type Diode design
26148 СНГ 750 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors MP104 are silicon alloyed pnp amplifying low-frequency ones with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 60В 10мА 0,1МГц 10
26147 СНГ 205 шт
5 грн.
50+4,50 грн.
100+4 грн.
250+3,75 грн.
The main technical parameters of the KS447A zener diode: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08...+0.03%/°C; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 159 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.8 DIP 1Вт 200pcs 4V7 kd-8
26145 СНГ 56 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.8 DIP 1Вт 200pcs 5V6 kd-8
26144 СНГ 487 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С 0.8 DIP 300мВт 200pcs 9V kd-8
26141 СНГ 145 шт
3 грн.
50+ 2,70 грн.
200+ 2,40 грн.
500+ 2,10 грн.
Diodes D2Zh germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2Zh diode: • Uopp max - Maximum direct reverse voltage: 150 V; • Inp max - Maximum forward current: 8 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 150 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. 0.7 DIP КД-4 150V 8mA Detector 100 pieces. single
26136 СНГ 37 шт
10 грн.
Diode assemblies KD205DT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205DT diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V 5.7 DIP 100V 500mA Rectifier 100 pieces. assembly
26135 СНГ 192 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor KT857A silicon epitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT857A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 10 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 250 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 6 V; • Ik max - Maximum allowable DC collector current: 7 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and open emitter output: no more than 5 mA (250V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 7.5; • Rke us - Saturation resistance between collector and emitter: no more than 0.33 Ohm; • tras - Resorption time: no more than 2500 ns 2 TO220 Bipolar DIP NPN 60Вт 100 pieces. 250В 10МГц 10
26134 СНГ 377 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns 2 TO220 Bipolar DIP PNP 60Вт 100 pieces. 60В 7МГц 750
26132 СНГ 83 шт
25 грн.
10+22,50 грн.
50+20 грн.
OEP-12 Resistor optocouplers. Designed for key and analog devices. The emitter of the optocoupler is an incandescent lamp, the receiver is a photoresistor based on cadmium selenium. 2 DIP 84pcs
26129 СНГ 1 шт
15 грн.
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402G diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. 5.7 DIP 300V 1A Diode bridge 100 pieces.
26123 СНГ 631 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. 0.8 DIP 340мВт 500pcs 10V kd-8
26119 СНГ 1261 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS182A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 8.2 V in the stabilization current range of 3...17 mA and to limit the voltage on both sides. The main technical parameters of the KS182A zener diode: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 14 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. 0.3 DIP 150мВт 200pcs 8V2
26116 СНГ 29 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS170A silicon, alloy, two-anode, low power. Designed for use as a reference element in voltage stabilization circuits. The main technical parameters of the KS170A zener diode: • Rated stabilization voltage: 7 V at Ist 10 mA; • Stabilization voltage spread: 6.43... 7.59 V; • Temperature coefficient of stabilization voltage: ±0.01%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 20 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. 0.3 DIP 150мВт 200pcs 7V0
26112 СНГ 14 шт
8 грн.
Diode bridge 1A 600V 5.2 DIP 600V 1A Diode bridge 500pcs
26109 СНГ 24 шт
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. 14 kt-9 Bipolar DIP NPN 15Вт 40pcs 700В 6МГц 10
26108 СНГ 64 шт
10 грн.
Diode bridge 1.2A 400V 5.7 DIP 400V 1.2A Diode bridge 500pcs
26107 СНГ 259 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P304 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 Bipolar DIP PNP 10Вт 50pcs 50В 500мА 0,05МГц
26103 СНГ 4 шт
25 грн.
Silicon thyristors KU202L are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 Screw 300V 10A 40pcs
26101 СНГ 91 шт
10 грн.
K71-7 single-layer polystyrene metallized capacitors. Are issued in rectangular cases with wire conclusions. Designed for operation in circuits of direct, alternating, pulsating currents and in pulsed modes. 4.2 Flexible Leads 250 DIP 100 pieces. 50nF (0.05µF) 0,5 %
26100 СНГ 120 шт
700 грн.
10+630 грн.
20+595 грн.
50+560 грн.
Photomultiplier tube with electrostatic focusing of electrons for measuring extremely low light fluxes in a wide spectral region. It is used in astronomy, astrophysics and spectral analysis. The photocathode is antimony-sodium-potassium-cesium. Optical input - end. The diameter of the working area of the cathode is 6 mm. Number of amplification stages 11. 200 1 PC.
26098 СНГ 14 шт
280 грн.
10+266 грн.
20+252 грн.
50+238 грн.
100+224 грн.
RP14A-30Sh6 low-frequency rectangular connector is designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and impulse currents with a voltage of 800 V. RP14A connectors are manufactured in UHL and V climatic versions according to GOST 15150-69. Type of acceptance - 1,5,9. Specifications: BR0.364.024 TU (OTK), ESZ.656.015 TU (PZ). Connectors RP14A are used for outdoor installation. RP14A plugs and sockets are equipped with universal metal cases with locks and have straight and angled cable outlets. A sleeve is used to fasten the cable in the housing. Plugs and sockets have guide catchers. All-climate connectors with cable housings are manufactured in dust-splash-proof (with a sealing gasket) housings. Contacts of plugs and sockets are floating. Symbol structure: RP14A-30Sh6 RP - Type of connector: manual articulation (dismemberment) of general purpose, low-frequency, rectangular; 14 - Serial number of development; A - Constructive version with a unified casing; 30 - Number of contacts: 21, 30; Ш - Type of contact: Ш - pin contact (plug); G - socket contact (socket); 6 - Casing type: - 3 - block part with instrument casing; - 4 - block part with a passage casing; - 6 - block part with a straight casing; - 7 - block part with an angular casing; - 8 - block part with a side casing; 5 - Coating of contacts: 5 - chemical oxide passive coating; without a letter - silver; B - Climatic version: B - all-climatic; without a letter - UHL. 135 DIP 16pcs Fork 30 per wire RP
26097 СНГ 21 шт
855 грн.
10+769,50 грн.
50+726,75 грн.
100+684 грн.
Vacuum circuit breaker V1V-1T1 10A 3kV is designed to operate in high-frequency circuits in the mode of currentless switching. 100 1 PC.
26095 СНГ 10 шт
400 грн.
10+380 грн.
20+360 грн.
50+340 грн.
100+320 грн.
SR-75-200FV The socket is instrumental-cable. Type of connection - threaded. The brand of the attached cable is RK75-17-31, RK75-17-11. Specifications - VR0.364.029TU. Connector СР-75-200ФВ is intended for operation in electrical circuits of radio frequency paths. Operating voltage in normal conditions - 500 V Number of articulations-dismemberments - 500 Contact resistance pin - socket and case - case - 0.01 Ohm Operating temperature ranges: - connectors with PTFE insulation - from -60 to +155 °С - connectors with polyethylene insulation - from -60 to +85 °С Minimum shelf life - 15 years Symbol structure: SR-75-200FV SR - radio frequency connector; 75 - the value of the wave resistance, Ohm; 200 - serial number of development; F or P - insulating material - fluoroplastic or polyethylene. 290 DIP 10 pieces. Socket 2 per wire SR
26094 СНГ 170 шт
285 грн.
10+270,75 грн.
20+256,50 грн.
50+242,25 грн.
100+228 грн.
SR-75-199FV Plug cable straight. Type of connection - threaded. The brand of the attached cable is RK75-17-31, RK75-17-11. Specifications - VR0.364.029TU. Connector СР-75-199ФВ is intended for operation in electrical circuits of radio frequency paths. Operating voltage in normal conditions - 500 V Number of articulations-dismemberments - 500 Contact resistance pin - socket and case - case - 0.01 Ohm Operating temperature ranges: - connectors with PTFE insulation - from -60 to +155 °С - connectors with polyethylene insulation - from -60 to +85 °С Minimum shelf life - 15 years Symbol structure: SR-75-199FV SR - radio frequency connector; 75 - the value of the wave resistance, Ohm; 199 - serial number of development; F or P - insulating material - fluoroplastic or polyethylene. 325 DIP 20pcs Fork 2 per wire SR
26091 СНГ 15 шт
1,800 грн.
Gyro semi-compass GPK-48. 2500 1 PC.
26087 СНГ 108 шт
1,200 грн.
Contactor TKD202ODG. 270 10 pieces.
26086 СНГ 3 шт
5,700 грн.
Relay RF-69. 90 1 PC.
26085 СНГ 64 шт
1,425 грн.
Relay TNN21PODG 26V. 90 1 PC.
26084 СНГ 6 шт
1,425 грн.
Relay TKE503DODG. 180 10 pieces.
26083 СНГ 82 шт
430 грн.
Relay TKE21PD1U. 25 21pcs