Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode KD204B
#14036
|
26215 | СНГ | 434 шт |
10 грн.
|
|
Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204B diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 200 V; • tvoc - Reverse recovery time: 1.5 µs | 5 | — | — | — | Screw | КД-11 | 200V | 600mA | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | single | ||||||||
Diode KD209A orange.
#14035
|
26214 | СНГ | 2805 шт |
1 грн.
|
|
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | — | — | — | DIP | КД-5А | 400V | 700mA | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||
| 26200 | СНГ | 8 шт |
8 грн.
|
|
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 56V | ks620 | — | |||||||||
Zener diode D815A
#14020
|
26199 | СНГ | 287 шт |
8 грн.
|
|
Medium power silicon zener diode, 5.6V The main technical parameters of the Zener diode D815A: • Stabilization voltage spread: 5... 6.2 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.045%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.6 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.4 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 5V6 | ks620 | — | ||||||||
| 26198 | СНГ | 178 шт |
8 грн.
|
|
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | |||||||||
Zener diode D815B
#14018
|
26197 | СНГ | 565 шт |
6 грн.
|
|
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | ||||||||
Zener diode D815V
#14017
|
26196 | СНГ | 71 шт |
6 грн.
|
|
Medium power silicon zener diode, 8.2V The main technical parameters of the Zener diode D815V: • Stabilization voltage spread: 7.4... 9.1 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.07%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1 ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 950 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 8V2 | ks620 | — | ||||||||
| 26195 | СНГ | 490 шт |
8 грн.
|
|
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 27V | ks620 | — | |||||||||
| 26194 | СНГ | 283 шт |
8 грн.
|
|
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 33V | ks620 | — | |||||||||
Zener diode D815Zh
#14014
|
26193 | СНГ | 538 шт |
7 грн.
|
|
Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 18V | ks620 | — | ||||||||
Zener diode D817V
#14013
|
26192 | СНГ | 4988 шт |
6 грн.
|
|
Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | ||||||||
| 26191 | СНГ | 392 шт |
8 грн.
|
|
Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | |||||||||
Chip KM531LA12 (=SN74S37)
#14006
|
26185 | СНГ | 26 шт |
6 грн.
|
|
Four logic elements 2I-NOT with high load capacity. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode assembly KD205BT
#13978
|
26158 | СНГ | 64 шт |
16 грн.
|
Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | — | — | — | DIP | — | 400V | 500mA | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | assembly | |||||||||
Transistor MP105
#13969
|
26149 | СНГ | 241 шт |
5 грн.
|
|
Transistors MP105 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 30В | 10мА | 0,1МГц | 45 | — | — | — | ||||||||
Transistor MP104
#13968
|
26148 | СНГ | 750 шт |
7 грн.
|
|
Transistors MP104 are silicon alloyed pnp amplifying low-frequency ones with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 60В | 10мА | 0,1МГц | 10 | — | — | — | ||||||||
Zener diode KS447A
#13967
|
26147 | СНГ | 205 шт |
5 грн.
|
|
The main technical parameters of the KS447A zener diode: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08...+0.03%/°C; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 18 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 159 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 4V7 | kd-8 | — | ||||||||
Zener diode KS456A
#13965
|
26145 | СНГ | 56 шт |
8 грн.
|
|
Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 200pcs | — | — | — | — | 5V6 | kd-8 | — | ||||||||
Zener diode D818A
#13964
|
26144 | СНГ | 487 шт |
3 грн.
|
|
The main technical parameters of the Zener diode D818A: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0... +0.023%/°С; • Temporary instability of stabilization voltage: ± 0.11%; • Zener diode differential resistance: 70 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Ambient temperature operating range: -60... +125 °С | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | 9V | kd-8 | — | ||||||||
Diode D2Zh
#13961
|
26141 | СНГ | 145 шт |
3 грн.
|
|
Diodes D2Zh germanium, point. Designed to convert and detect signals with a frequency of up to 150 MHz in amplitude and phase detectors, as video detectors and DC component restorers in televisions, in ring modulators and frequency converters, in counting circuits and in low-power rectifiers. The main technical characteristics of the D2Zh diode: • Uopp max - Maximum direct reverse voltage: 150 V; • Inp max - Maximum forward current: 8 mA; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 250 µA at Uobr 150 V; • tvoc arr - Reverse recovery time: 3 µs; • Sd - Total capacitance: 0.2 pF at Uobr 1.5 V. | 0.7 | — | — | — | DIP | КД-4 | 150V | 8mA | — | Detector | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Diode assembly KD205DT
#13956
|
26136 | СНГ | 37 шт |
10 грн.
|
Diode assemblies KD205DT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205DT diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 5.7 | — | — | — | DIP | — | 100V | 500mA | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | assembly | |||||||||
Transistor KT857A
#13955
|
26135 | СНГ | 192 шт |
17 грн.
|
|
Transistor KT857A silicon epitaxial-planar structure npn switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT857A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 10 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 250 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 6 V; • Ik max - Maximum allowable DC collector current: 7 A; • Ik and max - The maximum allowable collector pulse current: 10 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and open emitter output: no more than 5 mA (250V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 7.5; • Rke us - Saturation resistance between collector and emitter: no more than 0.33 Ohm; • tras - Resorption time: no more than 2500 ns | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | 60Вт | 100 pieces. | 250В | 7А | 10МГц | 10 | — | — | — | ||||||||
Transistor KT853V
#13954
|
26134 | СНГ | 377 шт |
12 грн.
|
|
Transistors KT853V silicon planar structures pnp switching. Designed for use in amplifiers and switching devices. The main technical characteristics of the transistor KT853V: • Transistor structure: pnp; • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 7 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 μA (60V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 750; • Sk - Collector junction capacitance: no more than 120 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.66 Ohm; • toff - Turn-off time:: no more than 3300 ns | 2 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | 60Вт | 100 pieces. | 60В | 8А | 7МГц | 750 | — | — | — | ||||||||
Optocoupler OEP-12
#13952
|
26132 | СНГ | 83 шт |
25 грн.
|
|
OEP-12 Resistor optocouplers. Designed for key and analog devices. The emitter of the optocoupler is an incandescent lamp, the receiver is a photoresistor based on cadmium selenium. | 2 | — | — | — | DIP | — | — | — | — | — | — | — | 84pcs | — | — | — | — | — | — | — | ||||||||
Diode bridge KTs402G
#13949
|
26129 | СНГ | 1 шт |
15 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the KTs402G diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.7 | — | — | — | DIP | — | 300V | 1A | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Zener diode D814V
#13944
|
26123 | СНГ | 631 шт |
3 грн.
|
|
Zener diodes D814V silicon, alloy, medium power. Designed to stabilize the voltage of 9.0-10.5 V in the stabilization current range of 3...32 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 340мВт | 500pcs | — | — | — | — | 10V | kd-8 | — | ||||||||
Zener diode KS182A
#13940
|
26119 | СНГ | 1261 шт |
3 грн.
|
|
Zener diodes KS182A silicon, alloy, two-anode, low power. Designed to stabilize the nominal voltage of 8.2 V in the stabilization current range of 3...17 mA and to limit the voltage on both sides. The main technical parameters of the KS182A zener diode: • Rated stabilization voltage: 8.2 V at Ist 5 mA; • Temperature coefficient of stabilization voltage: ±0.05%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 14 Ohm at Ist 5 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 8V2 | — | — | ||||||||
Zener diode KS170A
#13937
|
26116 | СНГ | 29 шт |
3 грн.
|
|
Zener diodes KS170A silicon, alloy, two-anode, low power. Designed for use as a reference element in voltage stabilization circuits. The main technical parameters of the KS170A zener diode: • Rated stabilization voltage: 7 V at Ist 10 mA; • Stabilization voltage spread: 6.43... 7.59 V; • Temperature coefficient of stabilization voltage: ±0.01%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 20 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | 150мВт | 200pcs | — | — | — | — | 7V0 | — | — | ||||||||
Diode bridge KTS405A
#13933
|
26112 | СНГ | 14 шт |
8 грн.
|
Diode bridge 1A 600V | 5.2 | — | — | — | DIP | — | 600V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Transistor KT826A
#13930
|
26109 | СНГ | 24 шт |
70 грн.
|
|
The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. | 14 | — | kt-9 | Bipolar | DIP | — | — | — | — | — | NPN | 15Вт | 40pcs | 700В | 1А | 6МГц | 10 | — | — | — |
