Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Thyratron MTX-90
#14130
|
26311 | СНГ | 579 шт |
15 грн.
|
|
Glow discharge thyratron Produced in glass design. The balloon is filled with neon. The electrode leads are rigid wire. Works in any position. Ambient temperature from 60 to +85° С. Cooling is natural. | 3.5 | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode bridge KTS405I
#14128
|
26309 | СНГ | 417 шт |
7 грн.
|
The main technical characteristics of the KTS405I diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | DIP | — | 500V | 600mA | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS405G
#14127
|
26308 | СНГ | 3 шт |
7 грн.
|
The main technical characteristics of the KTs405G diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.2 | — | — | — | DIP | — | 300V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS405D
#14126
|
26307 | СНГ | 46 шт |
7 грн.
|
The main technical characteristics of the KTs405D diode: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.2 | — | — | — | DIP | — | 200V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Diode bridge KTS405B
#14125
|
26306 | СНГ | 2992 шт |
7 грн.
|
The main technical characteristics of the KTs405B diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | DIP | — | 500V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | |||||||||
Zener diode KS531V
#14124
|
26305 | СНГ | 49 шт |
6 грн.
|
|
Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.5 | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | 31V | — | — | ||||||||
Zener diode KS515G
#14114
|
26292 | СНГ | 61 шт |
7 грн.
|
|
Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.6 | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | 15V | — | — | ||||||||
Varicap KV106B
#14112
|
26290 | СНГ | 50 шт |
15 грн.
|
Varicaps KV106B silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106B varicap: • Sd min - Minimum total capacitance: 15 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 35 pF at Uobr 4 V; • Qв - Quality factor of varicap: 60; • Iobr - Constant reverse current: 20 μA at Uobr 90 V; • Uo6p - DC reverse voltage: 90 V; • Pnp - Forward power dissipation: 5 W; • Tacr - Working range of ambient temperature: -60... +100 °C. | 6.5 | — | — | — | Screw | КД-11 | — | — | — | — | — | 5Вт | 10 pieces. | — | — | — | — | — | — | — | |||||||||
Varicap KV106A
#14111
|
26289 | СНГ | 41 шт |
15 грн.
|
Varicaps KV106A silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106A varicap: • Sd min - Minimum total capacitance: 20 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 50 pF at Uobr 4 V; • Qв - Quality factor of the varicap: 40; • Iobr - Constant reverse current: 20 μA at Uobr 120 V; • Uo6p - DC reverse voltage: 120 V; • Pnp - Forward power dissipation: 7 W; • Tacr - Working range of ambient temperature: -60... +100 °C. | 6.5 | — | — | — | Screw | КД-11 | — | — | — | — | — | 7Вт | 10 pieces. | — | — | — | — | — | — | — | |||||||||
Petal M6 brass
#14056
|
26235 | СНГ | 261 шт |
2 грн.
|
Petal unilateral brass with a tin covering under the M6 screw of GOST 22376-77. Total length 26 mm. | 0.6 | — | — | — | Clamp | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Petal M4 brass shortened
#14054
|
26233 | СНГ | 27103 шт |
0.70 грн.
|
Petal unilateral brass with a tin covering under the M4 screw shortened GOST 22376-77. Total length 13 mm. | 0.2 | — | — | — | Clamp | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Reed switch MKA-27101 gr.B
#14053
|
26232 | СНГ | 218 шт |
9 грн.
|
|
Normally open, 0.15 ohm, 0.5A 250V, MDS: 40-60A | 0.5 | — | — | — | DIP | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Diode KD202D
#14040
|
26219 | СНГ | 514 шт |
8 грн.
|
|
Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V | 5 | — | — | — | Screw | КДЮ-11 | 140V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Diode KD204A
#14039
|
26218 | СНГ | 31 шт |
10 грн.
|
|
Diodes KD204A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204A diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 400 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - DC reverse current: no more than 150 µA at Uobr 400 V; • tvoc - Reverse recovery time: 1.5 µs | 3.2 | — | — | — | Screw | КДЮ-11 | 400V | 400mA | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | single | ||||||||
Diode KD202K
#14038
|
26217 | СНГ | 212 шт |
8 грн.
|
|
Diodes KD202K silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202K diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 400 V | 4.5 | — | — | — | Screw | КДЮ-11 | 280V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Diode KD204B
#14036
|
26215 | СНГ | 434 шт |
10 грн.
|
|
Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204B diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 100 µA at Uobr 200 V; • tvoc - Reverse recovery time: 1.5 µs | 5 | — | — | — | Screw | КД-11 | 200V | 600mA | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | single | ||||||||
Diode KD209A orange.
#14035
|
26214 | СНГ | 2805 шт |
1 грн.
|
|
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 0.3 | — | — | — | DIP | КД-5А | 400V | 700mA | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | single | ||||||||
| 26200 | СНГ | 8 шт |
8 грн.
|
|
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 56V | ks620 | — | |||||||||
Zener diode D815A
#14020
|
26199 | СНГ | 317 шт |
8 грн.
|
|
Medium power silicon zener diode, 5.6V The main technical parameters of the Zener diode D815A: • Stabilization voltage spread: 5... 6.2 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.045%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.6 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.4 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 5V6 | ks620 | — | ||||||||
| 26198 | СНГ | 178 шт |
8 грн.
|
|
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | |||||||||
Zener diode D815B
#14018
|
26197 | СНГ | 579 шт |
6 грн.
|
|
Medium power silicon zener diode, 6.8V The main technical parameters of the Zener diode D815B: • Stabilization voltage spread: 6.1... 7.5 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.05%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 0.8 Ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 1.15 A; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 6V8 | ks620 | — | ||||||||
Zener diode D815V
#14017
|
26196 | СНГ | 81 шт |
6 грн.
|
|
Medium power silicon zener diode, 8.2V The main technical parameters of the Zener diode D815V: • Stabilization voltage spread: 7.4... 9.1 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.07%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1 ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 950 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 8V2 | ks620 | — | ||||||||
| 26195 | СНГ | 490 шт |
8 грн.
|
|
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 27V | ks620 | — | |||||||||
| 26194 | СНГ | 283 шт |
8 грн.
|
|
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 33V | ks620 | — | |||||||||
Zener diode D815Zh
#14014
|
26193 | СНГ | 568 шт |
7 грн.
|
|
Medium power silicon zener diode, 180V The main technical parameters of the D815Zh zener diode: • Stabilization voltage spread: 16.2... 19.8 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.11%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 3 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 450 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | — | — | — | Screw | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 18V | ks620 | — | ||||||||
Zener diode D817V
#14013
|
26192 | СНГ | 4988 шт |
6 грн.
|
|
Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | ||||||||
| 26191 | СНГ | 392 шт |
8 грн.
|
|
Medium power silicon zener diode, 82V. The main technical parameters of the Zener diode D817V: • Stabilization voltage spread: 74... 90 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 45 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 60 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 4.2 | — | — | — | Screw | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 82V | ks620 | — | |||||||||
Chip KM531LA12 (=SN74S37)
#14006
|
26185 | СНГ | 26 шт |
6 грн.
|
|
Four logic elements 2I-NOT with high load capacity. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Diode assembly KD205BT
#13978
|
26158 | СНГ | 64 шт |
16 грн.
|
Diode assemblies KD205BT, each consisting of two silicon diffusion diodes, with separate leads. Designed to convert alternating voltage with a frequency of up to 5 kHz in power supply units of radio-electronic equipment. The main technical characteristics of the KD205BT diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 500 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 500 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 400 V | 5.7 | — | — | — | DIP | — | 400V | 500mA | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | assembly | |||||||||
Transistor MP105
#13969
|
26149 | СНГ | 241 шт |
5 грн.
|
|
Transistors MP105 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 30В | 10мА | 0,1МГц | 45 | — | — | — |
