Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Stabilization voltage | Plug or socket | Number of contacts | Mechanical installation | Type | Diode design |
|---|
| 26354 | СНГ | 70 шт |
30 грн.
|
Capacitors of constant capacity with a mica dielectric, molded into plastic (KSO type), are intended for use in equipment, mainly as separating, blocking and grid capacitors in high-frequency circuits. | 25 | hard conclusions | — | 1600 | — | — | DIP | — | — | — | — | — | — | — | 28pcs | — | — | — | — | 4.7nF (4700pF) | 5 % | — | — | — | — | — | — | ||||||||||||
| 26353 | СНГ | 66 шт |
30 грн.
|
Capacitors of constant capacity with a mica dielectric, molded into plastic (KSO type), are intended for use in equipment, mainly as separating, blocking and grid capacitors in high-frequency circuits. | 25 | hard conclusions | — | 2000 | — | — | DIP | — | — | — | — | — | — | — | 28pcs | — | — | — | — | 4.3nF (4300pF) | 5 % | — | — | — | — | — | — | ||||||||||||
| 26352 | СНГ | 105 шт |
30 грн.
|
Capacitors of constant capacity with a mica dielectric, molded into plastic (KSO type), are intended for use in equipment, mainly as separating, blocking and grid capacitors in high-frequency circuits. | 25 | hard conclusions | — | 2000 | — | — | DIP | — | — | — | — | — | — | — | 28pcs | — | — | — | — | 3.6nF (3600pF) | 5 % | — | — | — | — | — | — | ||||||||||||
| 26350 | СНГ | 24 шт |
30 грн.
|
Capacitors of constant capacity with a mica dielectric, molded into plastic (KSO type), are intended for use in equipment, mainly as separating, blocking and grid capacitors in high-frequency circuits. | 25 | hard conclusions | — | 2500 | — | — | DIP | — | — | — | — | — | — | — | 28pcs | — | — | — | — | 2nF (2000pF) | 5 % | — | — | — | — | — | — | ||||||||||||
| 26348 | СНГ | 883 шт |
3 грн.
|
|
ONp-KG-22 connectors are designed to work in electrical circuits of direct, alternating (frequency up to 3 MHz) pulse currents for printed wiring. The operating current for each contact is 3 A. Maximum operating voltage - no more than 1250 V Contact pitch - 5 mm. | 1.8 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | Socket | 7 | For a fee | ONP | — | |||||||||||
Capacitor MBGO-1 4 uF 160 V
#14153
|
26347 | СНГ | 498 шт |
10 грн.
|
Capacitors MBGO-1 are designed to form powerful pulses of the discharge current in the load, have a high energy consumption. Capacitors are manufactured in metal rectangular cases, sealed by soldering, with spade terminals. | 30 | hard conclusions | — | 160 | — | — | DIP | — | — | — | — | — | — | — | 40pcs | — | — | — | — | 4µF | 10 % | — | — | — | — | — | — | |||||||||||
Mica gasket TO-3
#14152
|
26346 | СНГ | 22344 шт |
1 грн.
|
Thermally conductive gasket for the transistor TO-3. | 0.05 | — | — | — | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT807A
#14151
|
26345 | СНГ | 104 шт |
8 грн.
|
|
Transistors silicon mezaplanarny structures npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. | 2.5 | — | — | — | — | Bipolar | DIP | — | — | — | — | — | NPN | 10Вт | 20pcs | 100В | 500мА | 5МГц | 45 | — | — | — | — | — | — | — | — | ||||||||||
Transistor MP111B
#14145
|
26336 | СНГ | 84 шт |
6 грн.
|
|
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 20В | 100мА | 1МГц | 45 | — | — | — | — | — | — | — | — | ||||||||||
Chip K170AA3
#14138
|
26324 | СНГ | 89 шт |
6 грн.
|
|
0.5 A leakage current driver. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K131LR4
#14136
|
26320 | СНГ | 74 шт |
6 грн.
|
|
Logic element 4-4I-2OR-NOT with the possibility of expansion by OR. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KR590KT1 (=AD7519)
#14135
|
26319 | СНГ | 3 шт |
12 грн.
|
|
Four-channel MOS switch with control circuit for switching currents up to 5mA. | 1.2 | — | DIP16 | — | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KM531IR18 (=Am25S07)
#14134
|
26317 | СНГ | 82 шт |
6 грн.
|
|
Six-bit register with parallel input. | 1.5 | — | DIP16 | — | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K131LD1
#14132
|
26315 | СНГ | 287 шт |
6 грн.
|
|
Two four-input OR expanders. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Radio lamp 6P21S
#14131
|
26312 | СНГ | 10 шт |
120 грн.
|
|
Directly heated beam tetrode for amplification and generation of high frequency oscillations. | 43 | — | — | — | — | — | Panel | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Thyratron MTX-90
#14130
|
26311 | СНГ | 579 шт |
15 грн.
|
|
Glow discharge thyratron Produced in glass design. The balloon is filled with neon. The electrode leads are rigid wire. Works in any position. Ambient temperature from 60 to +85° С. Cooling is natural. | 3.5 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode bridge KTS405I
#14128
|
26309 | СНГ | 417 шт |
7 грн.
|
The main technical characteristics of the KTS405I diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 600 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 600 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | — | — | DIP | — | 500V | 600mA | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS405G
#14127
|
26308 | СНГ | 3 шт |
7 грн.
|
The main technical characteristics of the KTs405G diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.2 | — | — | — | — | — | DIP | — | 300V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS405D
#14126
|
26307 | СНГ | 46 шт |
7 грн.
|
The main technical characteristics of the KTs405D diode: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 200 V. | 5.2 | — | — | — | — | — | DIP | — | 200V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS405B
#14125
|
26306 | СНГ | 2992 шт |
7 грн.
|
The main technical characteristics of the KTs405B diode: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 500 V. | 5.2 | — | — | — | — | — | DIP | — | 500V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Zener diode KS531V
#14124
|
26305 | СНГ | 49 шт |
6 грн.
|
|
Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.5 | — | — | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | — | — | 31V | — | — | — | — | — | ||||||||||
Zener diode KS515G
#14114
|
26292 | СНГ | 31 шт |
7 грн.
|
|
Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.6 | — | — | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 50pcs | — | — | — | — | — | — | 15V | — | — | — | — | — | ||||||||||
Varicap KV106B
#14112
|
26290 | СНГ | 50 шт |
15 грн.
|
Varicaps KV106B silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106B varicap: • Sd min - Minimum total capacitance: 15 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 35 pF at Uobr 4 V; • Qв - Quality factor of varicap: 60; • Iobr - Constant reverse current: 20 μA at Uobr 90 V; • Uo6p - DC reverse voltage: 90 V; • Pnp - Forward power dissipation: 5 W; • Tacr - Working range of ambient temperature: -60... +100 °C. | 6.5 | — | — | — | — | — | Screw | КД-11 | — | — | — | — | — | 5Вт | 10 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Varicap KV106A
#14111
|
26289 | СНГ | 41 шт |
15 грн.
|
Varicaps KV106A silicon, epitaxial-diffusion, multiplying. Designed for use in frequency multiplication and frequency modulation circuits. The main technical parameters of the KV106A varicap: • Sd min - Minimum total capacitance: 20 pF at Uobr 4 V; • Sd max - Maximum total capacitance: 50 pF at Uobr 4 V; • Qв - Quality factor of the varicap: 40; • Iobr - Constant reverse current: 20 μA at Uobr 120 V; • Uo6p - DC reverse voltage: 120 V; • Pnp - Forward power dissipation: 7 W; • Tacr - Working range of ambient temperature: -60... +100 °C. | 6.5 | — | — | — | — | — | Screw | КД-11 | — | — | — | — | — | 7Вт | 10 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Petal M6 brass
#14056
|
26235 | СНГ | 261 шт |
2 грн.
|
Petal unilateral brass with a tin covering under the M6 screw of GOST 22376-77. Total length 26 mm. | 0.6 | — | — | — | — | — | Clamp | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Petal M4 brass shortened
#14054
|
26233 | СНГ | 27083 шт |
0.70 грн.
|
Petal unilateral brass with a tin covering under the M4 screw shortened GOST 22376-77. Total length 13 mm. | 0.2 | — | — | — | — | — | Clamp | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Reed switch MKA-27101 gr.B
#14053
|
26232 | СНГ | 210 шт |
9 грн.
|
|
Normally open, 0.15 ohm, 0.5A 250V, MDS: 40-60A | 0.5 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode KD202D
#14040
|
26219 | СНГ | 514 шт |
8 грн.
|
|
Diodes KD202D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202D diode: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 200 V | 5 | — | — | — | — | — | Screw | КДЮ-11 | 140V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Diode KD204A
#14039
|
26218 | СНГ | 31 шт |
10 грн.
|
|
Diodes KD204A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the KD204A diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 400 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - DC reverse current: no more than 150 µA at Uobr 400 V; • tvoc - Reverse recovery time: 1.5 µs | 3.2 | — | — | — | — | — | Screw | КДЮ-11 | 400V | 400mA | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Diode KD202K
#14038
|
26217 | СНГ | 212 шт |
8 грн.
|
|
Diodes KD202K silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the KD202K diode: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 400 V | 4.5 | — | — | — | — | — | Screw | КДЮ-11 | 280V | 5A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | single |
