Transistor KT857A

Transistor KT857A silicon epitaxial-planar structure npn switching.
Designed for use in amplifiers and switching devices.

The main technical characteristics of the transistor KT857A:
• Transistor structure: npn;
• Рк t max - Constant power dissipation of the collector with a heat sink: 60 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: more than 10 MHz;
• Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 250 V;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 6 V;
• Ik max - Maximum allowable DC collector current: 7 A;
• Ik and max - The maximum allowable collector pulse current: 10 A;
• Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and open emitter output: no more than 5 mA (250V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 7.5;
• Rke us - Saturation resistance between collector and emitter: no more than 0.33 Ohm;
• tras - Resorption time: no more than 2500 ns