Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Zener diode KS210Zh
#13739
|
25907 | СНГ | 1670 шт |
1 грн.
|
|
Zener diodes KS210Zh silicon, planar, low power. Designed to stabilize the nominal voltage of 10 V in the stabilization current range of 0.5 ... 13 mA in measuring equipment, in amplifiers for level matching, in automation systems for supplying low-power sensors, as well as to stabilize the pulse voltage and limit pulse signals. Available in metal-glass cases with flexible leads. The main technical parameters of the KS210Zh zener diode: • Rated stabilization voltage: 10 V at Ist 4 mA; • Stabilization voltage spread: 9... 11 V; • Temperature coefficient of stabilization voltage: 0.09%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 40 Ohm at Ist 4 mA; • Minimum allowable stabilization current: 0.5 mA; • Maximum allowable stabilization current: 13 mA; • Maximum allowable power dissipation on the zener diode: 0.125 W; • Ambient temperature operating range: -60... +125 °С | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | 125мВт | 1000pcs | — | — | — | — | 10V | КД-3. | — | ||||||||
Transistor P701A
#13738
|
25906 | СНГ | 4 шт |
38 грн.
|
|
Transistors P701A silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | NPN | 10Вт | 20pcs | 60В | 500мА | 20МГц | 60 | — | — | — | ||||||||
Diode KD202Zh
#13737
|
25905 | СНГ | 409 шт |
7 грн.
|
|
The main technical characteristics of the KD202Zh diode: • Uobr and max - Maximum impulse reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 300 V. | 4.5 | — | — | — | Screw | КДЮ-11 | 210V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Diode KD202M
#13736
|
25904 | СНГ | 68 шт |
8 грн.
|
|
Diodes KD202M silicon, diffusion. The main technical characteristics of the KD202M diode: • Uobr and max - Maximum impulse reverse voltage: 500 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 500 V | 4.5 | — | — | — | Screw | КД-11 | 350V | 5A | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
| 25902 | СНГ | 25 шт |
30 грн.
|
|
The main technical characteristics of the diode KD213A OS: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V | 3.5 | — | — | — | DIP | КД-23 | 200V | 10A | — | — | Rectifier | — | — | 50pcs | — | — | — | — | — | — | single | |||||||||
Chip K161LP2
#13733
|
25900 | СНГ | 20 шт |
6 грн.
|
|
Four PROHIBITION elements with a common and reverse input and a NOT element. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR1531LI3 (=74F11)
#13729
|
25896 | СНГ | 28 шт |
6 грн.
|
|
Three logical elements 3I. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip KR531IP5 (=SN74S280)
#13726
|
25893 | СНГ | 115 шт |
6 грн.
|
|
Parity check scheme. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Chip K561IE9A
#13725
|
25892 | СНГ | 9 шт |
8 грн.
|
|
A counter dividing by eight. The IC uses Johnsons octal code (when the counter moves to the next logical state, only one logical variable changes). As one bit of the counter, a clocked MS type D flip-flop with a direct setting input of 0 is used. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
Chip KR1407UD3
#13720
|
25888 | СНГ | 39 шт |
10 грн.
|
|
KR1407UD3 microcircuits are a low-noise broadband operational amplifier with adjustable control current and are used as video amplifiers, sensitive preamplifiers of photoresistors. Optimized for signal sources from 100 ohms to 10 k ohms. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | — | — | ||||||||
Chip K1051XA1
#13719
|
25887 | СНГ | 27 шт |
35 грн.
|
|
The K1051XA1 microcircuits are a vertical scanning circuit (an upgraded version of the K1021XA5) and are designed to generate a signal in the deflection system coils of the vertical scanning output stages of color and black-and-white TVs and the kinescope screen blanking signal in the absence of a tripping current. They have a built-in protection circuit. | 7 | HSIP9 | — | — | DIP | — | — | — | — | TV | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
Chip KR580VG92
#13718
|
25886 | СНГ | 18 шт |
12 грн.
|
|
The KR580VG92 microcircuit is a controller of the "microprocessor-public channel" interface systems. Has a data width of 8 bits. | 6.5 | DIP40 | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 36pcs | — | — | — | — | — | — | — | ||||||||
Transistor MP103A
#13712
|
25876 | СНГ | 326 шт |
5 грн.
|
|
Transistor MP103A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 30 | — | — | — | ||||||||
Transistor GT321V
#13711
|
25875 | СНГ | 2 шт |
10 грн.
|
|
Transistors GT321V germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | ||||||||
Diode bridge KTS402A
#13710
|
25874 | СНГ | 4 шт |
30 грн.
|
Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402A: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | — | — | — | DIP | — | 600V | 1A | — | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Diode MD217
#13707
|
25870 | СНГ | 4 шт |
5 грн.
|
|
Diodes MD217 silicon, diffusion. Are issued in the glass-to-metal case with flexible conclusions. The main technical characteristics of the diode MD217: • Uopp max - Maximum direct reverse voltage: 800 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 800 V. | 1 | — | — | — | DIP | КД-9 | 800V | 100mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Diode D206
#13706
|
25869 | СНГ | 216 шт |
4 грн.
|
|
Diodes D206 silicon, alloy. Designed to convert alternating voltage with a frequency of up to 1 kHz The main technical characteristics of the diode D206: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V. | 1 | — | — | — | DIP | КД-9 | 100V | 50mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||
Zener diode KS139A
#13705
|
25868 | СНГ | 1692 шт |
3 грн.
|
|
Zener diode KS139A - alloy, silicon, low power. The main purpose is voltage stabilization from 3.51 to 4.29 V. It has a stabilization current range from 3 to 70 mA. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 3V9 | kd-8 | — | ||||||||
Zener diode D814G
#13704
|
25867 | СНГ | 1781 шт |
3 грн.
|
|
Zener diodes D814G silicon, alloy, medium power. Designed to stabilize the voltage of 10.0-12.0 V in the stabilization current range of 3...29 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | 11V | — | — | ||||||||
Transistor KT321B
#13703
|
25866 | СНГ | 1185 шт |
6 грн.
|
|
Transistors KT321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 50В | 200мА | 60МГц | 120 | — | — | — | ||||||||
Transistor MP101B
#13702
|
25863 | СНГ | 1005 шт |
6 грн.
|
|
Transistors MP101B are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 20В | 20мА | 0,5МГц | 45 | — | — | — | ||||||||
Transistor MP115
#13700
|
25860 | СНГ | 887 шт |
5 грн.
|
|
Silicon bipolar alloyed pnp transistors MP115 types in glass-to-metal housing are designed to work in pulse circuits, voltage stabilizers, DC amplifiers and other household appliances. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 60мВт | 100 pieces. | 30В | 200мА | 0,1МГц | 45 | — | — | — | ||||||||
Transistor MP10
#13698
|
25858 | СНГ | 98 шт |
8 грн.
|
|
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. The main technical characteristics of the MP10 transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 30 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...30; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 30 | — | — | — | ||||||||
Thyristor KU101B
#13696
|
25856 | СНГ | 3 шт |
9 грн.
|
Silicon thyristors KU101B, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101B: • Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 1.8 | — | — | — | DIP | — | 50V | — | 1A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Thyristor KU102B
#13693
|
25853 | СНГ | 42 шт |
12 грн.
|
Silicon thyristors KU102B, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102B: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. | 1.2 | — | — | — | DIP | — | 100V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Thyristor KU102A
#13692
|
25852 | СНГ | 38 шт |
10 грн.
|
Silicon thyristors KU102A, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102A: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. | 1.2 | — | — | — | DIP | — | 50V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Thyristor KU102G
#13691
|
25851 | СНГ | 109 шт |
20 грн.
|
Silicon thyristors KU102G, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102G: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs. • Ambient temperature operating range: -60... +125 °С | 1.2 | — | — | — | DIP | — | 200V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||
Thyristor KU201V
#13690
|
25849 | СНГ | 228 шт |
10 грн.
|
• Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | — | 50V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Thyristor KU201B
#13689
|
25848 | СНГ | 3 шт |
10 грн.
|
• Maximum DC reverse voltage: 25 V; • Maximum DC voltage in closed state: 25 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | — | 25V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | |||||||||
Thyristor KU201K
#13685
|
25844 | СНГ | 33 шт |
14 грн.
|
• Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | Screw | — | 300V | 2A | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — |
