Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode D206
#13706
|
25869 | СНГ | 216 шт |
4 грн.
|
|
Diodes D206 silicon, alloy. Designed to convert alternating voltage with a frequency of up to 1 kHz The main technical characteristics of the diode D206: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 100 V. | 1 | — | — | — | — | — | — | — | DIP | КД-9 | 100V | 50mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | single | ||||||||
Zener diode KS139A
#13705
|
25868 | СНГ | 1692 шт |
3 грн.
|
|
Zener diode KS139A - alloy, silicon, low power. The main purpose is voltage stabilization from 3.51 to 4.29 V. It has a stabilization current range from 3 to 70 mA. | 0.8 | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | 3V9 | kd-8 | — | ||||||||
Zener diode D814G
#13704
|
25867 | СНГ | 1781 шт |
3 грн.
|
|
Zener diodes D814G silicon, alloy, medium power. Designed to stabilize the voltage of 10.0-12.0 V in the stabilization current range of 3...29 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | — | — | 11V | — | — | ||||||||
Transistor KT321B
#13703
|
25866 | СНГ | 1185 шт |
6 грн.
|
|
Transistors KT321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 50В | 200мА | 60МГц | 120 | — | — | — | — | — | ||||||||
Transistor MP101B
#13702
|
25863 | СНГ | 1005 шт |
6 грн.
|
|
Transistors MP101B are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 20В | 20мА | 0,5МГц | 45 | — | — | — | — | — | ||||||||
Transistor MP115
#13700
|
25860 | СНГ | 887 шт |
5 грн.
|
|
Silicon bipolar alloyed pnp transistors MP115 types in glass-to-metal housing are designed to work in pulse circuits, voltage stabilizers, DC amplifiers and other household appliances. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 60мВт | 100 pieces. | 30В | 200мА | 0,1МГц | 45 | — | — | — | — | — | ||||||||
Transistor MP10
#13698
|
25858 | СНГ | 98 шт |
8 грн.
|
|
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. The main technical characteristics of the MP10 transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 30 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...30; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 30 | — | — | — | — | — | ||||||||
Thyristor KU101B
#13696
|
25856 | СНГ | 3 шт |
9 грн.
|
Silicon thyristors KU101B, diffusion-alloy, p-type, triode, non-lockable. Designed for use as switching elements. The main technical parameters of the thyristor KU101B: • Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 1.8 | — | — | — | — | — | — | — | DIP | — | 50V | — | 1A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU102B
#13693
|
25853 | СНГ | 42 шт |
12 грн.
|
Silicon thyristors KU102B, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102B: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 100 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. | 1.2 | — | — | — | — | — | — | — | DIP | — | 100V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU102A
#13692
|
25852 | СНГ | 38 шт |
10 грн.
|
Silicon thyristors KU102A, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102A: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs • Working range of ambient temperature: -60... +125 °С. | 1.2 | — | — | — | — | — | — | — | DIP | — | 50V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU102G
#13691
|
25851 | СНГ | 109 шт |
20 грн.
|
Silicon thyristors KU102G, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102G: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs. • Ambient temperature operating range: -60... +125 °С | 1.2 | — | — | — | — | — | — | — | DIP | — | 200V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU201V
#13690
|
25849 | СНГ | 213 шт |
10 грн.
|
• Maximum DC reverse voltage: 50 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | — | — | — | — | Screw | — | 50V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU201B
#13689
|
25848 | СНГ | 3 шт |
10 грн.
|
• Maximum DC reverse voltage: 25 V; • Maximum DC voltage in closed state: 25 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | — | — | — | — | Screw | — | 25V | — | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor KU201K
#13685
|
25844 | СНГ | 33 шт |
14 грн.
|
• Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | — | — | — | — | — | Screw | — | 300V | 2A | 30A | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | |||||||||
Transistor MP114
#13683
|
25842 | СНГ | 295 шт |
6 грн.
|
|
Transistors MP114 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 60В | 10мА | 0,1МГц | 10 | — | — | — | — | — | ||||||||
Transistor MP103
#13682
|
25841 | СНГ | 398 шт |
5 грн.
|
|
Transistor MP103 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 100мВт | 100 pieces. | 10В | 100мА | 1МГц | 45 | — | — | — | — | — | ||||||||
Transistor MP113
#13681
|
25840 | СНГ | 185 шт |
5 грн.
|
|
Transistor MP113 germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 10В | 100мА | 1МГц | 45 | — | — | — | — | — | ||||||||
| 25805 | СНГ | 59199 шт |
2 грн.
|
Capacitor K77-2b 0.047uF 100V 5%. | 1 | Flexible Leads | — | 100 | 6 | 20 | — | — | DIP | — | — | — | — | — | — | — | — | 400pcs | — | — | — | — | 47nF (0.047µF) | 5 % | — | — | — | ||||||||||
Chip K131LR3
#13623
|
25776 | СНГ | 317 шт |
6 грн.
|
|
Logical element 2-2-2-3I-4OR-NOT with the possibility of expansion by OR. | 1 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR140UD5A
#13613
|
25766 | СНГ | 284 шт |
10 грн.
|
|
Medium-precision operational amplifier with composite transistors (emitter followers) at the input, without frequency correction. In addition to the common output, it has differential outputs. | 1 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR1407UD1
#13611
|
25763 | СНГ | 17 шт |
15 грн.
|
|
It is a low-noise, broadband operational amplifier. Provides adjustment of the control current from 0.25 to 1 mA. Optimized for low impedance signal generators (100 Ohm...1 kOhm). Designed for use as a sensitive preamplifier for low-resistance photoresistors, video amplifiers and a playback head preamplifier in VCRs. | 0.5 | — | DIP8 | — | — | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | ||||||||
Chip KS531IR20 (=Am25S09)
#13607
|
25759 | СНГ | 9 шт |
8 грн.
|
|
4-bit two-input register. | 1.2 | — | DIP16 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KS1590LK121 (=MC10H121)
#13603
|
25755 | СНГ | 32 шт |
12 грн.
|
|
Logical element OR - AND/OR - AND - NOT. | 1.3 | — | DIP16 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR521CA4
#13601
|
25753 | СНГ | 11 шт |
25 грн.
|
|
Fast voltage comparator. | 1 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR186IR4
#13595
|
25747 | СНГ | 3 шт |
10 грн.
|
|
64-bit quasi-static serial shift register. | 1 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip K145IK21
#13594
|
25746 | СНГ | 33 шт |
25 грн.
|
|
Octave divider with modulator. | 1.3 | — | DIP16 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | ||||||||
Chip K145KT2
#13593
|
25745 | СНГ | 88 шт |
12 грн.
|
|
6-channel current (clock) key. | 1 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR1027XA1
#13589
|
25738 | СНГ | 5 шт |
15 грн.
|
|
Electronic stabilizer of the speed of rotation of the DC motor shaft with a tacho sensor. | 1.1 | — | DIP16 | — | — | — | — | — | DIP | — | — | — | — | Drivers | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | ||||||||
Chip KM155LE1
#13587
|
25734 | СНГ | 34 шт |
9 грн.
|
|
4 logical elements 2OR-NOT. | 1.2 | — | DIP14 | — | — | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR581BA1A
#13586
|
25733 | СНГ | 48 шт |
15 грн.
|
|
Universal asynchronous transceiver (UART=UART) of digital information in binary code. It converts data from serial to parallel and vice versa. The receiver and transmitter operate independently of each other. It does not require a microcontroller to operate. The data format of the microcircuit corresponds to the data format of the RS232 interface. | 7 | — | DIP40 | — | — | — | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — |
