Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Case diameter D, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Accuracy | Plug or socket | Number of contacts | Mechanical installation | Type | Diode design |
|---|
Chip KM500LM105
#13585
|
25732 | СНГ | 39 шт |
8 грн.
|
|
The microcircuit is 3 logic elements OR-NOT/OR. | 1 | — | DIP16 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KS500LE106
#13584
|
25730 | СНГ | 52 шт |
8 грн.
|
|
Three elements of OR-NOT. | 1.2 | — | DIP16 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KS500TM133
#13583
|
25729 | СНГ | 39 шт |
6 грн.
|
|
4 D-lets | 1.5 | — | DIP16 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KR159NT1A
#13580
|
25726 | СНГ | 19 шт |
10 грн.
|
|
Matrix of two npn transistors. | 0.5 | — | DIP8 | — | — | — | DIP | — | — | — | — | Transistor Assembly | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KR538UN3A (=LM387N)
#13578
|
25724 | СНГ | 13 шт |
14 грн.
|
|
Ultra-low noise, wideband amplifier. | 0.5 | — | DIP8 | — | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K157XA1A
#13577
|
25723 | СНГ | 15 шт |
20 грн.
|
|
High frequency amplifier with converter. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | — | radio reception | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KR531AP4 (=SN74S241)
#13576
|
25722 | СНГ | 195 шт |
8 грн.
|
|
Two-channel eight-bit shaper with three output states. | 1.5 | — | DIP20 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 80pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K555VZh1 (=SN74LS630)
#13563
|
25698 | СНГ | 103 шт |
8 грн.
|
|
16-bit Hamming code control circuit. | 2.5 | — | DIP28 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 60pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K176IM1
#13554
|
25687 | СНГ | 28 шт |
8 грн.
|
|
4-way full adder. | 1.1 | — | DIP16 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K176RM1
#13553
|
25686 | СНГ | 45 шт |
8 грн.
|
|
RAM storage matrix for 16 bits. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | — | Memory | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KS531IR21 (=AM25S010)
#13550
|
25683 | СНГ | 14 шт |
8 грн.
|
|
4-bit shift register. | 1.2 | — | DIP16 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor 1T321V (=GT321V)
#13543
|
25674 | СНГ | 2 шт |
10 грн.
|
|
Transistors 1T321V germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | — | — | — | — | ||||||||||
Transistor GT321B
#13542
|
25673 | СНГ | 1 шт |
10 грн.
|
|
Transistors GT321B germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 120 | — | — | — | — | — | — | — | ||||||||||
GK2 socket 2.5mm two-wire
#13539
|
25667 | СНГ | 4194 шт |
6 грн.
|
|
GK2 socket 2.5mm two-wire with break contact Working current 1A Maximum voltage 250V. | 2.5 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 800 pcs. | — | — | — | — | — | — | Socket | 2 | To the body | DC power | — | ||||||||||
Plug Sh2P 2,5mm two-wire
#13538
|
25666 | СНГ | 5016 шт |
5 грн.
|
|
Plug Sh2P 2.5mm two-wire. Working current 1A Maximum voltage 250V. | 1.3 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | — | Fork | 2 | per wire | DC power | — | ||||||||||
Transistor MP113A
#13537
|
25665 | СНГ | 218 шт |
5 грн.
|
|
Transistor MP113A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 10В | 100мА | 1МГц | 120 | — | — | — | — | — | — | — | ||||||||||
Transistor MP106
#13536
|
25664 | СНГ | 356 шт |
6 грн.
|
|
Transistors MP106 silicon alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 15В | 10мА | 0,5МГц | 100 | — | — | — | — | — | — | — | ||||||||||
Transistor MP101
#13535
|
25663 | СНГ | 1201 шт |
5 грн.
|
|
Transistors MP101 are silicon alloyed npn amplifying low-frequency transistors with non-standardized MP101, MP101B and standardized MP101A noise factors at a frequency of 1 kHz. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 20В | 20мА | 0,5МГц | 25 | — | — | — | — | — | — | — | ||||||||||
Transistor KT829G
#13386
|
25510 | СНГ | 995 шт |
12 грн.
|
|
Transistors KT829G silicon mezaplanar structures npn compound amplifying. Designed for use in low-frequency amplifiers, switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | — | NPN | 60Вт | 200pcs | 45В | 8А | 4МГц | 750 | — | — | — | — | — | — | — | ||||||||||
Chip KR1561KT3 (=CD4066)
#13299
|
25393 | СНГ | 4542 шт |
4 грн.
|
|
Four bi-directional switches | 1 | — | DIP14 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode 2D201G (=KD201G)
#12957
|
25228 | СНГ | 11 шт |
40 грн.
|
|
Diodes 2D201G silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | — | — | — | Screw | КДЮ-11 | 200V | 10A | 15A | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Diode 2D201V (=KD201V)
#12956
|
25227 | СНГ | 77 шт |
30 грн.
|
|
Diodes 2D201V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | — | — | — | Screw | КДЮ-11 | 200V | 5A | 15A | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Diode 2D201A (=KD201A)
#12955
|
25226 | СНГ | 8 шт |
25 грн.
|
|
Diodes 2D201A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | — | — | — | Screw | КДЮ-11 | 100V | 5A | 15A | — | Rectifier | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Transistor P210V
#12951
|
25222 | СНГ | 57 шт |
60 грн.
|
|
Transistors P210V germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for common emitter circuit in large signal mode: more than 10. | 34 | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 45Вт | 10 pieces. | 45В | 12А | — | 10 | — | — | — | — | — | — | — | ||||||||||
Transistor P210B
#12950
|
25221 | СНГ | 110 шт |
60 грн.
|
|
P210B Transistors P210B germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A. • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 10 | 34 | — | — | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 45Вт | 10 pieces. | 65В | 12А | — | 10 | — | — | — | — | — | — | — | ||||||||||
| 25143 | СНГ | 128 шт |
5 грн.
|
|
ST3-17 non-sealed disk thermistor is designed to operate in DC, pulsating and alternating current circuits with a frequency of up to 400 Hz in pulsed modes, for measuring and controlling temperature, as well as for temperature compensation of electrical circuit elements with positive temperature coefficients of resistance. Maximum power - 0.3 W. Rated resistance 68 ohm Temperature coefficient of resistance at +20º С - from -3%/°С to 4.5%/°С. Temperature sensitivity coefficient - from 2580 K to 3860 K. | 0.3 | Flexible Leads | — | 5 | — | — | DIP | — | — | — | — | — | — | — | — | 200pcs | — | — | — | — | 68 Ом | 10 % | — | — | — | — | — | |||||||||||
| 25141 | СНГ | 174 шт |
80 грн.
|
|
Appointment - differential system for the equipment of digital system IKM-30-4 | 16 | — | DIP28 | — | — | — | DIP | — | — | — | — | Telephony | — | — | — | 6pcs | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 25140 | СНГ | 917 шт |
55 грн.
|
|
Appointment - differential system for the equipment of digital system IKM-30-4. | 2 | — | DIP28 | — | — | — | DIP | — | — | — | — | Telephony | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Bearing 2000087 7x14x4
#12769
|
25126 | СНГ | 9 шт |
25 грн.
|
Inner diameter 7mm Outer diameter 14mm Width (height) 4mm. | 2.5 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor GT346A
#12505
|
24839 | СНГ | 217 шт |
7 грн.
|
|
GT346A transistors are amplifying germanium epitaxial-planar structures pnp with a normalized noise figure at frequencies of 800 and 200 MHz. Designed for use in television channel selectors of meter and decimeter wavelength ranges with automatic gain control. | 0.4 | — | — | — | КТ-1 | Bipolar | DIP | — | — | — | — | — | — | PNP | 50мВт | 1000pcs | 15В | 10мА | 700МГц | 150 | — | — | — | — | — | — | — |
