Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Working current, A Material Appointment Diode design
25741 СНГ 369 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
2 logical elements 4I-NOT. 1.2 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
22130 СНГ 10 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
2 four-input OR logic expanders. 1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
21333 СНГ 145 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Integrated circuit of the TTL series. KM155LD3 microcircuits are an eight-input OR expander. Contains 11 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1.1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
21329 СНГ 1 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Integrated circuit of the TTL series. K155LD3 microcircuits are an eight-input OR expander. Contains 11 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
22186 СНГ 298 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Two D flip-flops. 1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
21938 СНГ 175 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Chip K131LA3 is 4 logic elements 2I-NOT. Contains 56 integral elements. Housing type 201.14-1. Weight no more than 1 g. General recommendations for use: Soldering temperature (235 ± 5) С, distance from the body to the soldering point (1 ± 0.5) mm, soldering time (2 ± 0.5) s. The number of allowable soldering during installation operations 1. On microcircuits, instead of the index "K", there may be a dot. Permissible value of static potential 30 V. It is not recommended to connect any electrical signals (including the "power" and "ground" buses) to the microcircuit pins. When repairing equipment, the microcircuit should be changed only with the power sources disconnected. Free inputs must be connected to a DC voltage source of 5 V ±10% through a 1 kΩ resistor or to a DC voltage source of 4.5 V ±10%. In this case, it is allowed to connect up to 20 pins of microcircuits to one resistor. 1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
21923 СНГ 145 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The K131TV1 chip is a JK flip-flop with 3I input logic. 1 DIP14 — — — — — DIP — — — — Logics — — — 100 pieces. — — — — — — — — — —
22187 СНГ 2 шт
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Static random access memory with 4096 bit information capacity control circuits. 1.5 DIP18 — — — — — DIP — — — — Memory — — — 80pcs — — — — — — — — — —
21805 СНГ 164 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Stabilizer -6V/1.5A 2.5 TO-220 — — — — — DIP — — — — Nutrition — — — 200pcs — — — — — — — — — —
23014 СНГ 3405 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21V germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — — — — КТЮ-3-3 Bipolar DIP — — — — — — PNP 150мВт 100 pieces. 40В 100мА 1,5МГц 100 — — — — — —
23010 СНГ 533 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 — — — — КТЮ-3-3 Bipolar DIP — — — — — — PNP 150мВт 100 pieces. 15В 20мА 2МГц 60 — — — — — —
24038 СНГ 373 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 — — — — — — DIP КД-121 30V 20mA — — Pulse — — 100 pieces. — — — — — — — — — single
23549 СНГ 2069 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Type of diode pulse Maximum constant reverse voltage, V 50 Maximum direct (rectified for a half-cycle) current, A 0.05 Hole mounting method Maximum recovery time, µs 0.004 Maximum reverse current, µA 1 Maximum forward voltage, V 1 at Ipr., A 0.05 Total capacity, Sd.pF 4 Operating temperature, С -60...125 Housing kd 3 0.2 — — — — — — DIP КД-2 50V 50mA 500mA — Pulse — — 500pcs — — — — — — — — — single
23799 СНГ 1106 шт
12 грн.
10+10,80 грн.
50+10,20 грн.
100+9,60 грн.
P2K modular switch is designed for switching electrical circuits of direct and alternating (frequency up to 20 MHz) currents, for volumetric and printed wiring. 6.5 — — — — — — DIP — — — — — — — — 50pcs — — — — — — — — — —
28021 СНГ 38082 шт
4 грн.
20+3,60 грн.
50+3,20 грн.
100+3 грн.
200+2,80 грн.
Material ceramic Rated voltage, V 250 Rated operating current, A 0.25 Cylindrical contacts Case length, mm 20 Case diameter, mm 5.2 Operating temperature, С -60…100 0.5 — 250 5 20 — — DIP — — — — — — — — 100 pieces. — — — — — — 0.25 Ceramics — —
— СНГ 2 шт
60 грн.
83 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 3 шт
60 грн.
90 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 15 шт
60 грн.
90 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 3 шт
60 грн.
84-88 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 4 шт
60 грн.
84 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 35 шт
60 грн.
89 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
— СНГ 1861 шт
50 грн.
— — — — — — — DIP — — — — — — — — 1 PC. — — — — — — — — 400Гц —
— СНГ 1040 шт
50 грн.
90 г. — — — — — — — DIP — — — — — — — — — — — — — — — — — 400Гц —
23003 СНГ 278 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — — — — КТЮ-3-3 Bipolar DIP — — — — — — PNP 200мВт 100 pieces. 70В 150мА — 25 — — — — — —
24735 СНГ 226 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — — — — КТЮ-3-6 Bipolar DIP — — — — — — PNP 150мВт 100 pieces. 30В 30мА 1МГц 40 — — — — — —
21835 СНГ 220 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 60 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 60 The maximum allowable current to (Ik max, A) 2 Static current transfer coefficient h21e min 30 Limiting frequency of the current transfer coefficient fgr, MHz 10.00 Maximum dissipated power k (Pk, W) 5 Housing KTYu-3-9 3.5 — — — — КТЮ-3-9 Bipolar DIP — — — — — — NPN 5Вт 25pcs 60В 2А 10МГц 30 — — — — — —
22976 СНГ 5 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 40 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 30 The maximum allowable current to (Ik max, A) 3 Static current transfer coefficient h21e min 25 Limiting frequency of the current transfer coefficient fgr, MHz 1.00 Maximum dissipated power k (Pk, W) 25 2.5 — — — — TO220 Bipolar DIP — — — — — — PNP 25Вт 100 pieces. 30В 3А 1МГц 20 — — — — — —
24465 СНГ 426 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Dissipation power, W 0.15 Rated stabilization voltage, V 10 Static resistance Rst., Ohm 22 Hole mounting method Minimum stabilization voltage, V 9.3 Maximum stabilization voltage, V 11 Temperature coefficient of stabilization voltage aUst.,% /С 0.07 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 3 Maximum stabilization current Ist.max., mA 14 Operating temperature, С -60...125 0.3 — — — — — — DIP — — — — — — — 150мВт 100 pieces. — — — — 10V kd25 — — — —
22961 СНГ 77 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Silicon diode, diffusion, high-speed. 2 — — — — — — DIP КД-8 700V 2A — — Fast — — 200pcs — — — — — — — — — single
28505 СНГ 367 шт
25 грн.
10+22,50 грн.
50+20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 — — — — — — Screw — 400V 5A — — — — — 40pcs — — — — — — — — — —