Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Working current, A Material Appointment Diode design
21923 СНГ 145 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The K131TV1 chip is a JK flip-flop with 3I input logic. 1 DIP14 DIP Logics 100 pieces.
22187 СНГ 2 шт
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Static random access memory with 4096 bit information capacity control circuits. 1.5 DIP18 DIP Memory 80pcs
21805 СНГ 164 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Stabilizer -6V/1.5A 2.5 TO-220 DIP Nutrition 200pcs
23014 СНГ 3425 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21V germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 40В 100мА 1,5МГц 100
23010 СНГ 533 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP15 germanium alloy pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 20мА 2МГц 60
24038 СНГ 373 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA Pulse 100 pieces. single
23549 СНГ 2069 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Type of diode pulse Maximum constant reverse voltage, V 50 Maximum direct (rectified for a half-cycle) current, A 0.05 Hole mounting method Maximum recovery time, µs 0.004 Maximum reverse current, µA 1 Maximum forward voltage, V 1 at Ipr., A 0.05 Total capacity, Sd.pF 4 Operating temperature, С -60...125 Housing kd 3 0.2 DIP КД-2 50V 50mA 500mA Pulse 500pcs single
23799 СНГ 1116 шт
12 грн.
10+10,80 грн.
50+10,20 грн.
100+9,60 грн.
P2K modular switch is designed for switching electrical circuits of direct and alternating (frequency up to 20 MHz) currents, for volumetric and printed wiring. 6.5 DIP 50pcs
28021 СНГ 38082 шт
4 грн.
20+3,60 грн.
50+3,20 грн.
100+3 грн.
200+2,80 грн.
Material ceramic Rated voltage, V 250 Rated operating current, A 0.25 Cylindrical contacts Case length, mm 20 Case diameter, mm 5.2 Operating temperature, С -60…100 0.5 250 5 20 DIP 100 pieces. 0.25 Ceramics
СНГ 2 шт
60 грн.
83 г. DIP 400Гц
СНГ 3 шт
60 грн.
90 г. DIP 400Гц
СНГ 15 шт
60 грн.
90 г. DIP 400Гц
СНГ 3 шт
60 грн.
84-88 г. DIP 400Гц
СНГ 4 шт
60 грн.
84 г. DIP 400Гц
СНГ 35 шт
60 грн.
89 г. DIP 400Гц
СНГ 1861 шт
50 грн.
DIP 1 PC. 400Гц
СНГ 1040 шт
50 грн.
90 г. DIP 400Гц
23003 СНГ 278 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 70В 150мА 25
24735 СНГ 252 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors MP40A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 30В 30мА 1МГц 40
21835 СНГ 220 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 60 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 60 The maximum allowable current to (Ik max, A) 2 Static current transfer coefficient h21e min 30 Limiting frequency of the current transfer coefficient fgr, MHz 10.00 Maximum dissipated power k (Pk, W) 5 Housing KTYu-3-9 3.5 КТЮ-3-9 Bipolar DIP NPN 5Вт 25pcs 60В 10МГц 30
22976 СНГ 5 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 40 Max. e.g. k-e at a given current to and a given resist. in the B-e circuit. (Uker max), V 30 The maximum allowable current to (Ik max, A) 3 Static current transfer coefficient h21e min 25 Limiting frequency of the current transfer coefficient fgr, MHz 1.00 Maximum dissipated power k (Pk, W) 25 2.5 TO220 Bipolar DIP PNP 25Вт 100 pieces. 30В 1МГц 20
24465 СНГ 426 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Dissipation power, W 0.15 Rated stabilization voltage, V 10 Static resistance Rst., Ohm 22 Hole mounting method Minimum stabilization voltage, V 9.3 Maximum stabilization voltage, V 11 Temperature coefficient of stabilization voltage aUst.,% /С 0.07 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 3 Maximum stabilization current Ist.max., mA 14 Operating temperature, С -60...125 0.3 DIP 150мВт 100 pieces. 10V kd25
22961 СНГ 77 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Silicon diode, diffusion, high-speed. 2 DIP КД-8 700V 2A Fast 200pcs single
28505 СНГ 371 шт
25 грн.
10+22,50 грн.
50+20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 400V 5A 40pcs
22785 СНГ 2641 шт
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Max. permissible reverse voltage, V: 50 Maximum direct forward current, mA: 50 0.3 DIP D104 50V 50mA Rectifier 100 pieces. single
23309 СНГ 6 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
90 г. 5.2 Screw КД-11 600V 3.0A Rectifier 100 pieces. single
22421 СНГ 201 шт
12 грн.
Maximum reverse voltage, V 200 Maximum repetitive impulse voltage in the closed state, V 200 The maximum average value of the current in the open state for the period, A 2 Maximum repetitive pulse current in the open state, A 30 Maximum voltage in the open state, V 2 The smallest constant control current required to turn on the thyristor, A 0.1 The smallest repetitive pulse control current required to turn on the thyristor, A 0.35 Trigger control voltage corresponding to the minimum DC trigger current, V 6 Triggering control voltage corresponding to the minimum pulse repetitive triggering current, V 10 Critical rate of voltage rise in the closed state, V / ms 5 Critical rate of current rise in the open state, A / ms 3 Turn-on time, ms 10 Turn-off time, ms 100 Working temperature, C -60…85 Features non-lockable 11 Screw 200V 30A 40pcs
23310 СНГ 172 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Dissipation power, W 1 Minimum stabilization voltage, V 7.4 Rated stabilization voltage, V 8.2 Maximum stabilization voltage, V 9 Static resistance Rst., Ohm 25 at current I st, mA 5 Temperature coefficient of stabilization voltage aUst.,% /С 0.08 Temporary instability of stabilization voltage dUst., V 1.5 Minimum stabilization current Ist.min., mA 1 Maximum stabilization current Ist.max., mA 96 Operating temperature, С -60…125 Hole mounting method Housing kd-8 0.5 DIP 1Вт 100 pieces. 8V2 kd-8
28024 СНГ 3528 шт
4 грн.
20+3,60 грн.
50+3,20 грн.
100+3 грн.
200+2,80 грн.
Material ceramic Rated voltage, V 250 Rated operating current, A 0.25 Cylindrical contacts Case length, mm 20 Case diameter, mm 5.2 Operating temperature, С -60…100 0.5 250 5 20 DIP 200pcs 0.25 Ceramics
22122 СНГ 81 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
2 logic elements 2I-NOT with a common input and two powerful transistors. 1 DIP14 DIP Logics 100 pieces.