Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
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Optocoupler CNX83A
#1722
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22719 | FAIRCHILD SEMICONDUCTOR | 26 шт |
17 грн.
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0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Optocoupler SFH615A-3
#1757
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22717 | VISHAY | 26 шт |
13 грн.
|
|
0.4 | DIP4 | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip AR8316-AK1E
#4162
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22932 | ATHEROS | 26 шт |
175 грн.
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6 Port Gigabit Ethernet Switch. | 3 | QFP176 | — | — | SMD | — | — | — | ethernet | — | — | — | — | — | 60pcs | — | — | — | — | — | — | — | — | ||||||||
MSC5530
#4380
|
20077 | — | 26 шт |
108 грн.
|
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Radio amplifier Mikrotik. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip KR580IK51
#9540
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21690 | СНГ | 26 шт |
10 грн.
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Programmable serial interface (universal synchronous - asynchronous transceiver). The IC converts the parallel code received from the central processor into a serial stream of characters with service bits. | 3.5 | DIP28 | — | — | DIP | — | — | — | Interfaces | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||
Microcircuit 273FE1-01032
#11795
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24024 | СНГ | 26 шт |
130 грн.
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Integral low pass filter. | 7.5 | — | — | — | DIP | — | — | — | Filters | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KM531LA12 (=SN74S37)
#14006
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26185 | СНГ | 26 шт |
6 грн.
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Four logic elements 2I-NOT with high load capacity. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip DS1811R-10+T&R (811B)
#17136
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29386 | Maxim Integrated | 26 шт |
90 грн.
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0.2 | SOT23 | — | — | SMD | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | — | — | — | |||||||||
Diode MBRB15100CT
#4309
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20986 | MCC | 25 шт |
16 грн.
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Diode 15A,100V Schottky x2 | 1.3 | — | — | — | DIP | D2PAK | 100V | 15A | — | Schottky | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | double common cathode | ||||||||
Chip KR134LA2
#8307
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22071 | СНГ | 25 шт |
4 грн.
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Logic element 8I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K174UR5
#8400
|
22006 | СНГ | 25 шт |
15 грн.
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IF amplifier | 1.2 | DIP16 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
Chip KS1146PP1
#8405
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22282 | СНГ | 25 шт |
20 грн.
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Codec of transmitting and receiving channels of telephone communication systems with pulse-code modulation. | 1.5 | DIP16 | — | — | DIP | — | — | — | Interfaces | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
| 21354 | СНГ | 25 шт |
100 грн.
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Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826B transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826B transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. | 14 | — | kt-9 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 15Вт | 40pcs | 700В | 1А | 6МГц | 10 | — | — | — | — | |||||||||
| 25902 | СНГ | 25 шт |
30 грн.
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The main technical characteristics of the diode KD213A OS: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 200 µA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 550 pF at Uobr 100 V | 3.5 | — | — | — | DIP | КД-23 | 200V | 10A | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | — | single | |||||||||
Diode 2D203D (=KD203D)
#13781
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25960 | СНГ | 25 шт |
45 грн.
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Diodes 2D203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. | 13 | — | — | — | Screw | — | 700V | 10A | — | Rectifier | — | — | — | — | 25pcs | — | — | — | — | — | — | — | single | ||||||||
Varicap KV103A
#16193
|
28439 | СНГ | 25 шт |
15 грн.
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Uobr(max) Maximum reverse voltage 80V Pmax Maximum power dissipation 5W t Nom. Total capacitance 18..32pF f=1..10MHz Uobr=4V Kc Capacitance overlap coefficient ~3.3 at Uobr=4V/50V f=1..10MHz Qv Quality factor >50 f=50MHz Uobr=4V. | 6.5 | — | — | — | Screw | КД-11 | — | — | — | — | — | — | — | 7Вт | 10 pieces. | — | — | — | — | — | — | — | — | |||||||||
Chip K531LR9P
#744
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21902 | СНГ | 24 шт |
6 грн.
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Logic element 4-2-3-2AND-4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
Chip K176IE17
#836
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21968 | СНГ | 24 шт |
6 грн.
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Binary counter with control device (calendar). | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||
MOC8103
#1742
|
20128 | — | 24 шт |
23 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Optocoupler MOC8104
#1743
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22714 | FAIRCHILD SEMICONDUCTOR | 24 шт |
8 грн.
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0.4 | DIP6 | — | — | DIP | — | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||
Chip K554CA1
#7397
|
21900 | СНГ | 24 шт |
8 грн.
|
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Dual voltage comparator. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||
AP9962AGH
#7959
|
20363 | ADVANCED POWER ELECTRONICS | 24 шт |
12 грн.
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download datasheet AP9962AGH pdf,146 KB | 0.47 | — | TO252 | Field | SMD | — | — | — | — | — | MOS n-channel | 40В | 32А | 27.8Вт | 3000pcs | — | — | — | — | — | — | — | — | ||||||||
Chip CD24AC240E (=KR1554AP3)
#10331
|
22317 | TEXAS INSTRUMENTS | 24 шт |
22 грн.
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Buffers & Line Drivers Octal Inv Buff/Line Drv W/3-St Otpt. | 2 | DIP20 | — | — | — | — | — | — | Logics | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | ||||||||
Transistor GT403B
#10840
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23037 | СНГ | 24 шт |
17 грн.
|
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Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 4Вт | 100 pieces. | 30В | 1,25А | — | 150 | — | — | — | — | ||||||||
Zener diode 1N5342B(6V8)
#11053
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23073 | ON SEMICONDUCTOR | 24 шт |
5.50 грн.
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1 | — | — | — | DIP | — | — | — | — | — | — | — | — | 5Вт | 500pcs | — | — | — | — | 6V8 | do201 | — | — | |||||||||
| 23362 | Taychipst | 24 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 13V | — | ||||||||||
| 23373 | VISHAY | 24 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | — | — | 27V | — | ||||||||||
Transistor KT826A
#13930
|
26109 | СНГ | 24 шт |
70 грн.
|
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The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. | 14 | — | kt-9 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 15Вт | 40pcs | 700В | 1А | 6МГц | 10 | — | — | — | — | ||||||||
Transistor FQB16N15TM
#17080
|
29321 | FAIRCHILD SEMICONDUCTOR | 24 шт |
32 грн.
|
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1.5 | — | D2PAK | Field | SMD | — | — | — | — | — | MOS n-channel | 150В | 16.4А | 108 Вт | 50pcs | — | — | — | — | — | — | — | — | |||||||||
| 29399 | VISHAY | 24 шт |
45 грн.
|
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0.43 | — | PowerPAKSO-8L | Field | SMD | — | — | — | — | — | MOS p-channel | 60В | 36А | 68Вт | 3000pcs | — | — | — | — | — | — | — | — |
