Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Diode design |
|---|
Chip KR1023XA1A
#10184
|
22215 | СНГ | 14 шт |
30 грн.
|
|
An integrated circuit is used to control the speed of a 2-section contactless DC motor. | 13 | DIP24 | — | — | DIP | — | — | — | Drivers | — | — | — | 20pcs | — | — | — | — | — | ||||||||
Transistor GT403I
#10843
|
23040 | СНГ | 14 шт |
26 грн.
|
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Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 4Вт | 50pcs | 60В | 1,25А | — | 30 | — | ||||||||
Chip 24C32AN
#13340
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25462 | ATMEL | 14 шт |
7 грн.
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0.5 | DIP8 | — | — | DIP | — | — | — | Memory | — | — | — | 50pcs | — | — | — | — | — | |||||||||
Chip KS531IR21 (=AM25S010)
#13550
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25683 | СНГ | 14 шт |
8 грн.
|
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4-bit shift register. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Diode bridge KTS405A
#13933
|
26112 | СНГ | 14 шт |
8 грн.
|
Diode bridge 1A 600V | 5.2 | — | — | — | DIP | — | 600V | 1A | — | Diode bridge | — | — | 500pcs | — | — | — | — | — | |||||||||
Transistor KT837M
#15471
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27710 | INTEGRAL | 14 шт |
12 грн.
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Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | 30Вт | 100 pieces. | 70В | 7,5A | 1МГц | 80 | — | ||||||||
Chip 318NR11V
#15719
|
27956 | СНГ | 14 шт |
90 грн.
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0.7 | SO16 | — | — | SMD | — | — | — | Telephony | — | — | — | 40pcs | — | — | — | — | — | |||||||||
Diode D101 flat terminals
#15803
|
28040 | СНГ | 14 шт |
3 грн.
|
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Diodes D101 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.9 | — | — | — | DIP | — | 75V | 30mA | — | Rectifier | — | — | 500pcs | — | — | — | — | single | ||||||||
Chip K531AP4P
#15900
|
28133 | СНГ | 14 шт |
8 грн.
|
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Two-channel eight-bit shaper with three output states. | 1.5 | DIP20 | — | — | DIP | — | — | — | Logics | — | — | — | 80pcs | — | — | — | — | — | ||||||||
Diode D247
#16189
|
28434 | СНГ | 14 шт |
40 грн.
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The main technical characteristics of the diode D247: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 500 V. | 13 | — | — | — | Screw | КДЮ-11 | 500V | 10A | — | Rectifier | — | — | 50pcs | — | — | — | — | single | ||||||||
Chip K531TV10P
#16228
|
28473 | СНГ | 14 шт |
8 грн.
|
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The K531TV10P chip is a double JK trigger. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Diode D215A
#17038
|
29288 | СНГ | 14 шт |
35 грн.
|
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Main technical characteristics of the D215A diode: • Uobp max - Maximum constant reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1.0 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 200 V. | 13 | — | — | — | Screw | КДЮ-11 | 200V | 10A | — | Rectifier | — | — | 50pcs | — | — | — | — | single | ||||||||
Diode HER108 MIC
#1030
|
22451 | MIC | 13 шт |
1 грн.
|
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0.3 | — | — | — | DIP | DO-41 | 1000V | 1A | — | Fast | — | — | 1000pcs | — | — | — | — | single | |||||||||
ATmega48-20PU
#3921
|
20957 | — | 13 шт |
144 грн.
|
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Chip ATmega8535-16JU
#3956
|
21113 | ATMEL | 13 шт |
182 грн.
|
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3 | PLCC44 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | 27pcs | — | — | — | — | — | |||||||||
Chip EN25F80-100QCP
#4731
|
22864 | EON | 13 шт |
23 грн.
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0.5 | DIP8 | — | — | DIP | — | — | — | Memory | — | — | — | 50pcs | — | — | — | — | — | |||||||||
Chip K531KP2P
#9893
|
21682 | СНГ | 13 шт |
5 грн.
|
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Dual digital selector-multiplexer 4-1. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Chip MBM27C64-20
#10334
|
22320 | FUJITSU | 13 шт |
65 грн.
|
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8.5 | DIP28 | — | — | DIP | — | — | — | Memory | — | — | — | 10 pieces. | — | — | — | — | — | |||||||||
Microcircuit 273FE1-01021
#11792
|
24021 | СНГ | 13 шт |
130 грн.
|
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Integral low pass filter. | 7.5 | — | — | — | DIP | — | — | — | Filters | — | — | — | 30pcs | — | — | — | — | — | ||||||||
| 24242 | СНГ | 13 шт |
6 грн.
|
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Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 40В | 200мА | 60МГц | 120 | — | |||||||||
Microcircuit 217LB1A
#12257
|
24639 | СНГ | 13 шт |
14 грн.
|
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Logic element 8I-NOT. | 1.5 | — | — | — | DIP | — | — | — | Logics | — | — | — | 40pcs | — | — | — | — | — | ||||||||
Chip KR538UN3A (=LM387N)
#13578
|
25724 | СНГ | 13 шт |
14 грн.
|
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Ultra-low noise, wideband amplifier. | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | 200pcs | — | — | — | — | — | ||||||||
Transistor P217A
#16930
|
29177 | СНГ | 13 шт |
20 грн.
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Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | ||||||||
ATmega48PA-PU
#2750
|
20949 | — | 12 шт |
96 грн.
|
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Enclosure type: PDIP-28 Short description: 8-bit microcontroller with 4 kB programmable flash Power, V: 1.8 ... 5.5 Working temperature, °С: -40...+85 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip L293B
#3028
|
21107 | — | 12 шт |
60 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
MIP3E3SMY
#3202
|
20561 | — | 12 шт |
115 грн.
|
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip LM1117S-ADJ
#4705
|
20273 | TEXAS INSTRUMENTS | 12 шт |
22 грн.
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0.3 | SOT223 | — | — | SMD | — | — | — | Nutrition | — | — | — | 2500pcs | — | — | — | — | — | |||||||||
Chip KM155IM2
#7383
|
22117 | СНГ | 12 шт |
6 грн.
|
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Two-digit (binary) full adder. | 1.5 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Chip K137LM1
#8396
|
22197 | СНГ | 12 шт |
6 грн.
|
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Logic element 3OR-NOT/3OR with the possibility of expanding by OR and with load resistors at the outputs. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Transistor KT629A
#11376
|
23487 | СНГ | 12 шт |
7 грн.
|
|
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. | 1.8 | — | — | Bipolar | SMD | — | — | — | — | — | PNP | 1Вт | 100 pieces. | — | 1А | 250МГц | 25 | — |
