Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Diode design |
|---|
| 24242 | СНГ | 13 шт |
6 грн.
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Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 210мВт | 100 pieces. | 40В | 200мА | 60МГц | 120 | — | |||||||||
Microcircuit 217LB1A
#12257
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24639 | СНГ | 13 шт |
14 грн.
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Logic element 8I-NOT. | 1.5 | — | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 40pcs | — | — | — | — | — | ||||||||
Chip KR538UN3A (=LM387N)
#13578
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25724 | СНГ | 13 шт |
14 грн.
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Ultra-low noise, wideband amplifier. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 200pcs | — | — | — | — | — | ||||||||
Transistor P217A
#16930
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29177 | СНГ | 13 шт |
20 грн.
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Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. | 11 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 30Вт | 40pcs | 60В | 7,5A | 0,1МГц | — | — | ||||||||
ATmega48PA-PU
#2750
|
20949 | — | 12 шт |
96 грн.
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Enclosure type: PDIP-28 Short description: 8-bit microcontroller with 4 kB programmable flash Power, V: 1.8 ... 5.5 Working temperature, °С: -40...+85 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip L293B
#3028
|
21107 | — | 12 шт |
60 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
MIP3E3SMY
#3202
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20561 | — | 12 шт |
115 грн.
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— | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip LM1117S-ADJ
#4705
|
20273 | TEXAS INSTRUMENTS | 12 шт |
22 грн.
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0.3 | SOT223 | — | — | SMD | — | — | — | — | Nutrition | — | — | — | — | — | 2500pcs | — | — | — | — | — | |||||||||
Chip KM155IM2
#7383
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22117 | СНГ | 12 шт |
6 грн.
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Two-digit (binary) full adder. | 1.5 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Chip K137LM1
#8396
|
22197 | СНГ | 12 шт |
6 грн.
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Logic element 3OR-NOT/3OR with the possibility of expanding by OR and with load resistors at the outputs. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Transistor KT629A
#11376
|
23487 | СНГ | 12 шт |
7 грн.
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Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. | 1.8 | — | — | Bipolar | SMD | — | — | — | — | — | — | PNP | — | — | 1Вт | 100 pieces. | — | 1А | 250МГц | 25 | — | ||||||||
Diode Bridge DB207S
#12232
|
24611 | SEP | 12 шт |
4 грн.
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Diode bridge 1000V, 2A, SMD. | 0.4 | — | — | — | SMD | — | 1000V | 2A | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | ||||||||
Thyristor KU221G
#15520
|
23879 | СНГ | 12 шт |
20 грн.
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The main technical parameters of the thyristor KU221G: • Repetitive impulse voltage: 50 V; • Repetitive impulse voltage in the closed state: 600 V; • Maximum repetitive pulse current in the open state: 100 A; • Average open pulse current: 3.2 A; • Pulse voltage in the open state: no more than 3.5 V; • Non-opening constant control voltage: 10 V; • Repetitive pulse current in the closed state: no more than 0.3 mA; • Unlocking direct control current: no more than 150 mA; • Pulse unlocking control voltage: no more than 7 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-off time: no more than 10 microseconds; • Working range of ambient temperature: -60... +125 °С. | 6 | — | — | — | DIP | — | 600V | 3.2A | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | |||||||||
Thyristor D235A
#16191
|
28437 | СНГ | 12 шт |
20 грн.
|
12 | — | — | — | DIP | — | 50V | — | 10A | — | — | — | — | — | — | 50pcs | — | — | — | — | — | ||||||||||
Thyristor 2U203G (=KU203G)
#16511
|
28759 | СНГ | 12 шт |
30 грн.
|
Main technical parameters of thyristor 2U203D: • Repetitive pulse voltage: 200 V; • Repetitive impulse voltage in closed state: 200 V; • Maximum repetitive pulse current in open state: 100 A; • Average pulse current in open state: 5 A; • Pulse voltage in open state: no more than 2 V; • Non-unlocking constant control voltage: not less than 0.1 V; • Direct current in closed state: no more than 10 mA; • Constant reverse current: no more than 10 mA; • Unlocking constant control current: no more than 450 mA; • Constant unlocking control voltage: no more than 2.5 V; • Pulse unlocking control voltage: 10 V; • Rate of voltage rise in the closed state: no more than 20 V/µs; • Turn-on time: no more than 3 μs; • Turn-off time: no more than 7 μs; • Operating range of ambient temperature: -60... +125 °C. | 33 | — | — | — | DIP | — | — | 10A | — | — | — | — | — | — | 20Вт | 20pcs | — | — | — | — | — | |||||||||
Chip KZh101A
#16630
|
28868 | СНГ | 12 шт |
24 грн.
|
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DC stabilizer KZH101A is a silicon, planar, n-channel DMOS transistor with a built-in channel. | 0.5 | DIP8 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | — | — | 400pcs | — | — | — | — | — | ||||||||
Chip K1106HP2
#690
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22308 | СНГ | 11 шт |
16 грн.
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The scheme of choice of television programs. | 4 | DIP28 | — | — | DIP | — | — | — | — | TV | — | — | — | — | — | 36pcs | — | — | — | — | — | ||||||||
Chip K500IV165
#707
|
22240 | СНГ | 11 шт |
6 грн.
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Encoding element with priority. | 1.3 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | ||||||||
Chip AR7240-AH1A
#4135
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22933 | ATHEROS | 11 шт |
209 грн.
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32-bit MIPS 24K processor running up to 400 MHz with 8 KB ICACHE and 32 KB DCache. | 5 | QFP128 | — | — | SMD | — | — | — | — | ethernet | — | — | — | — | — | 90pcs | — | — | — | — | — | ||||||||
Varicap 2V105A
#8874
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22649 | СНГ | 11 шт |
40 грн.
|
Silicon varicaps, diffusion-alloy, tuned. Designed for use in circuits for restructuring the circuits of resonant amplifiers. | 1 | — | — | — | DIP | КД-9 | — | — | — | — | Varicap | — | — | — | — | 100 pieces. | — | — | — | — | — | |||||||||
Chip MAX7400ESA
#8996
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21185 | Maxim Integrated | 11 шт |
84 грн.
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0.4 | SO8 | — | — | SMD | — | — | — | — | Filters | — | — | — | — | — | 100 pieces. | — | — | — | — | — | |||||||||
Chip KR531TV10 (=SN74S113)
#10118
|
21863 | СНГ | 11 шт |
6 грн.
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Double JK flip-flop. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Transistor 3P328A-2
#11195
|
23319 | СНГ | 11 шт |
35 грн.
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Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. | 0.1 | — | КТ-21 | Field | SMD | — | — | — | — | — | — | MOS n-channel | 6В | 1мА | 50мВт | 120pcs | — | — | 8ГГц | — | — | ||||||||
Chip SN74LS03N
#11381
|
23492 | TEXAS INSTRUMENTS | 11 шт |
17 грн.
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1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | — | — | 25pcs | — | — | — | — | — | |||||||||
Kenotron VI1-18/32
#11643
|
23873 | СНГ | 11 шт |
400 грн.
|
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VI1-18/32 High-voltage pulse kenotron. Glass-metal balloon. Height 142mm, diameter 80mm. Tungsten cathode. Cooling is natural. Durability not less than 500 h. | 450 | — | — | — | Clamp | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | ||||||||
Kenotron V1-0.03/13
#11648
|
23878 | СНГ | 11 шт |
150 грн.
|
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High voltage kenotron. V1-0.03/13 is intended for rectification of alternating current in continuous and pulsed modes of operation in special-purpose equipment. Cathode - oxide direct heating. Glass decoration with plinth. | 50 | — | — | — | Clamp | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | ||||||||
Chip JRC4558 (=4558D) sop-8
#11844
|
24096 | JRC | 11 шт |
5 грн.
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0.4 | SO8 | — | — | SMD | — | — | — | — | Amplifiers | — | — | — | — | — | 2500pcs | — | — | — | — | — | |||||||||
Diode 2D201G (=KD201G)
#12957
|
25228 | СНГ | 11 шт |
40 грн.
|
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Diodes 2D201G silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | — | Screw | КДЮ-11 | 200V | 10A | 15A | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | single | ||||||||
Chip KR521CA4
#13601
|
25753 | СНГ | 11 шт |
25 грн.
|
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Fast voltage comparator. | 1 | DIP14 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 100 pieces. | — | — | — | — | — | ||||||||
Chip TNY266GN
#13658
|
25822 | Power Integrations | 11 шт |
25 грн.
|
|
0.5 | SMD-8B | — | — | SMD | — | — | — | — | Nutrition | — | — | — | — | — | 50pcs | — | — | — | — | — |
