transistors
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain |
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STS30N3LLH6
#2694
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— | — | — |
21.40 грн.
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— | Корпус: SO-8 Uds,V: 30 Idd,A: 30 Rds(on), Ohm: 0.0016 Ciss, pF/Qg, nC: 3700/29 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
STW10NK80Z
#2695
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— | — | — |
47.40 грн.
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— | Корпус: TO-247 Uds,V: 800 Idd,A: 9 Rds(on), Ohm: 0,9 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
STW12NK90Z
#2696
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— | ST MICROELECTRONICS | — |
54.60 грн.
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— | download datasheet STW12NK90Z pdf,491 KB | 7.5 | TO247 | Field | DIP | MOS n-channel | 900В | 11А | 230Вт | 30pcs | — | — | — | — | |||||||
STW13NK80Z
#2697
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— | — | — |
47.40 грн.
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— | Корпус: TO-247 Uds,V: 800 Idd,A: 12 Rds(on), Ohm: 0.65 Ciss, pF/Qg, nC: 3480/115 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
STW14NK50Z
#2698
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— | ST MICROELECTRONICS | — |
37 грн.
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— | download datasheet STW14NK50Z pdf,633 KB | 7.5 | TO247 | Field | DIP | MOS n-channel | 500В | 14А | 150Вт | 30pcs | — | — | — | — | |||||||
STW15NK90Z
#2699
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— | — | — |
96 грн.
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— | Корпус: TO-247 Uds,V: 900 Idd,A: 15 Rds(on), Ohm: 0.4 Ciss, pF/Qg, nC: 6100/190 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
| — | INFINEON TECHNOLOGIES | — |
16 грн.
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— | download datasheet 50N03 pdf,271 KB | 0.7 | TO252 | Field | SMD | MOS n-channel | 30В | 50А | 136Вт | 75pcs | — | — | — | — | |||||||||
VN2406L-G
#2701
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— | MICROCHIP TECHNOLOGY | — |
20.80 грн.
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— | download datasheet VN2406L-G pdf,559 KB | 0.25 | TO92 | Field | DIP | MOS n-channel | 240В | 1.7А | 1Вт | 1000pcs | — | — | — | — | |||||||
ZVN4525E6TA
#2702
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— | — | — |
29.60 грн.
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— | Корпус: SOT23-6 Uds,V: 250 V, N-channel enhancement mode MOSFET Rds(on), Ohm: 0,23 | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor KP103E
#3433
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— | СНГ | — |
12 грн.
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— | P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 10 Maximum dissipated power Psi max., W 0.007 Slope of characteristic S, mA/V 0.4…2.4 Housing KT-17 | 0.7 | — | Field | DIP | — | — | — | 125мВт | 200pcs | — | — | — | — | |||||||
Transistor KT3107I
#3434
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23590 | СНГ | — |
3 грн.
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— | 0.3 | TO92 | Bipolar | DIP | PNP | — | — | 300мВт | 1000pcs | 50В | 200мА | 200МГц | 450 | ||||||||
Transistor GT905A
#3435
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22330 | СНГ | — |
16 грн.
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— | Transistors GT905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. | 5 | — | Bipolar | DIP | PNP | — | — | 6Вт | 50pcs | 65В | 7А | 30МГц | 100 | |||||||
Transistor KT315B
#3437
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23553 | СНГ | — |
2 грн.
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— | Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | КТ-13 | Bipolar | DIP | NPN | — | — | 150мВт | 800 pcs. | 20В | 100мА | 250МГц | 350 | |||||||
Transistor P416B
#3438
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23029 | СНГ | — |
10 грн.
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— | Transistor P416B germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 100мВт | 100 pieces. | 12В | 25мА | 80МГц | 200 | |||||||
Transistor MP42B
#3439
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25861 | СНГ | — |
7 грн.
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— | PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 45…100 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 | 1.6 | КТЮ-3-6 | Bipolar | DIP | PNP | — | — | 200мВт | 100 pieces. | 15В | 200мА | 1МГц | 100 | |||||||
2T603B nickel
#3442
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— | — | — |
4 грн.
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— | 77,79 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Transistor MP15A
#3443
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23011 | СНГ | — |
6 грн.
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— | Transistor MP15A germanium alloyed pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 15В | 20мА | 2МГц | 100 | |||||||
Transistor MP41
#3444
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24617 | СНГ | — |
6 грн.
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— | Transistor MP41 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 15В | 30мА | 1МГц | 60 | |||||||
Transistor KT808AM
#3445
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26623 | СНГ | — |
45 грн.
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— | Transistors KT808AM silicon mezaplanar structures npn high-voltage, switching. Designed for use in switching devices, horizontal scanning generators, electronic voltage regulators. | 13 | TO3 | Bipolar | DIP | NPN | — | — | 70Вт | 20pcs | 130В | 10А | 8МГц | 125 | |||||||
| 23004 | СНГ | — |
8 грн.
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— | KP327B silicon planar transistor with two insulated gates protected by diodes and an n-type channel | 0.3 | КТ-29 | Field | SMD | MOS n-channel | 14В | 30мА | 200мВт | 100 pieces. | — | — | — | — | ||||||||
2P903A
#3464
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— | — | — |
30 грн.
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— | 89,90 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
2P903V OS
#3465
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— | — | — |
30 грн.
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— | 87 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
2P903V
#3466
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— | — | — |
30 грн.
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— | 89,83 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
KP903B
#3467
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— | — | — |
26 грн.
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— | Structure: N-FET Maximum drain-source voltage Usi, V: 20 Maximum gate-source voltage Uzi max., V: 6.5 Channel resistance in the open state Rsi on, mOhm: - Maximum dissipated power Psi max., W: - Slope characteristic S,mA/V: 90 | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
KP903A
#3468
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— | — | — |
26 грн.
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— | 89 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
KT921B
#3469
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— | — | — |
60 грн.
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— | 91 г. | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Transistor MP37A
#3475
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25678 | СНГ | — |
5 грн.
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— | NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 30 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 30 | |||||||
Transistor MP37B
#3477
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25662 | СНГ | — |
6 грн.
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— | NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.15 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 | 1.8 | КТЮ-3-3 | Bipolar | DIP | NPN | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 50 | |||||||
Transistor MP20A
#3478
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23002 | СНГ | — |
6 грн.
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— | Transistor MP20A germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | КТЮ-3-3 | Bipolar | DIP | PNP | — | — | 150мВт | 100 pieces. | 20В | 50мА | 2МГц | 150 | |||||||
AF4502C
#3731
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20303 | Anachip Corporation | — |
18 грн.
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— | 0.3 | SO8 | Field | SMD | MOS n+p-channel | 30В | 8.5А | 2.1Вт | 95pcs | — | — | — | — |
