2T603B nickel
| Summary | <p>77,79 г.</p> |
| Categories | Domestic transistors |
Features
Description
The main technical characteristics of the transistor 2T603B:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 0.5 W;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V;
• Ik max - Maximum allowable DC collector current: 300 mA;
• Ik and max - The maximum allowable collector pulse current: 600 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0 μA;
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60;
• Sk - Collector junction capacitance: no more than 15 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 7 ohms
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Transistor KT601AM
6 грн.
|
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Chip KR140UD1B
10 грн.
|
|
Chip K174UR1
10 грн.
|
|
Switch P2K-N1-15-4 without fixation
12 грн.
|
|
Diode KD521V
1 грн.
|
|
Diode 2D503A (=KD503A)
3 грн.
|
|
Quartz 3.579545MHz
5 грн.
|
|
Connector RJ-45, UTP Cat.5e
2 грн.
|
|
Chip K174XA2
12 грн.
|
|
Transistor MP37B
6 грн.
|
|
Chip K237XA2
6 грн.
|
|
Transistor KT3102EM
3 грн.
|