Please note: Due to technical reasons, the processing, pickup, and shipping of orders placed on Thursday (15.10) will take place on Friday (16.10). Thank you for your patience and understanding!

transistors

Results: 3670

Filter layout: |
Filters
Sort by: Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
AP9962AGH
AP9962AGH
#7959
 20363 ADVANCED POWER ELECTRONICS 24 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
download datasheet AP9962AGH pdf,146 KB 0.47 TO252 Field SMD MOS n-channel 40В 32А 27.8Вт 3000pcs — — — —
Transistor GT403B
Transistor GT403B
#10840
 23037 СНГ 24 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 150
Transistor KT826A
Transistor KT826A
#13930
 26109 СНГ 24 шт
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor FQB16N15TM
Transistor FQB16N15TM
#17080
 29321 FAIRCHILD SEMICONDUCTOR 24 шт
32 грн.
10+30,40 грн.
50+28,80 грн.
100+25,60 грн.
1.5 D2PAK Field SMD MOS n-channel 150В 16.4А 108 Вт 50pcs — — — —
Transistor SQJ457EP-T1_GE3 (=QJ457)
Transistor SQJ457EP-T1_GE3 (=QJ457)
#17149
 29399 VISHAY 24 шт
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
0.43 PowerPAKSO-8L Field SMD MOS p-channel 60В 36А 68Вт 3000pcs — — — —
Transistor GT320A
Transistor GT320A
#14473
 26684 СНГ 23 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT320A germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 12В 150мА 80МГц 80
Transistor KT837I
Transistor KT837I
#15469
 27708 INTEGRAL 22 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor TIP115
Transistor TIP115
#10449
 22463 FAIRCHILD SEMICONDUCTOR 21 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
2.5 TO220 Bipolar DIP PNP — — 50Вт 50pcs 60В 2А — 1000
Transistor BC635
Transistor BC635
#10487
 22532 NXP 21 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
500+1,75 грн.
0.3 TO92 Bipolar DIP NPN — — 830мВт 200pcs 45В 1А 100МГц 250
Transistor 2SC1923Y
Transistor 2SC1923Y
#10488
 22533 TOSHIBA 20 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.3 TO92 Bipolar DIP NPN — — 100мВт 200pcs 30В 20мА 550МГц 200
Transistor 2SC2668-O
Transistor 2SC2668-O
#10490
 22535 TOSHIBA 20 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.2 TO92S Bipolar DIP NPN — — 100мВт 200pcs 30В 20мА 550МГц 200
Transistor KT837L
Transistor KT837L
#10739
 22804 INTEGRAL 19 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 60В 7,5A 1МГц 40
Transistor P303
Transistor P303
#13778
 25957 СНГ 19 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
Transistors P303 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP — — 10Вт 20pcs 65В 500мА 0,1МГц —
Transistor IRF710
Transistor IRF710
#2518
 21108 INTERNATIONAL RECTIFIER 18 шт
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
2.5 TO220AB Field DIP MOS n-channel 400В 2А 36Вт 50pcs — — — —
Transistor MBQ60T65PES (=60T65PES)
Transistor MBQ60T65PES (=60T65PES)
#12586
 24923 MAGNACHIP SEMICONDUCTOR 17 шт
112 грн.
10+106,40 грн.
50+100,80 грн.
100+89,60 грн.
6.5 TO247 IGBT DIP — — — 428Вт 30pcs 650В 60А — —
AP9T18GH
AP9T18GH
#5162
 20367 ADVANCED POWER ELECTRONICS 15 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
download datasheet AP9T18GH pdf,217 KB 0.43 TO252 Field SMD MOS n-channel 20В 38А 31Вт 3000pcs — — — —
Transistor TIP111
Transistor TIP111
#10448
 22461 MOTOROLA 15 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN — — 50Вт 50pcs 80В 2А — 1000
Transistor MP21A
Transistor MP21A
#16884
 29131 СНГ 15 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21A germanium alloy pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 35В 100мА 1МГц 150
Transistor 2T371A (=KT371A)
Transistor 2T371A (=KT371A)
#6827
 22329 СНГ 14 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Silicon epitaxial-planar structure npn microwave amplifying transistors with a normalized noise figure. 0.2 КТ-14 Bipolar SMD NPN — — 100мВт 200pcs 10В 20мА 3ГГц 240
Transistor GT403I
Transistor GT403I
#10843
 23040 СНГ 14 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 50pcs 60В 1,25А — 30
Transistor KT837M
Transistor KT837M
#15471
 27710 INTEGRAL 14 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor 2T321D OS(=KT321D)
Transistor 2T321D OS(=KT321D)
#11953
 24242 СНГ 13 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 120
Transistor P217A
Transistor P217A
#16930
 29177 СНГ 13 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Transistor KT629A
Transistor KT629A
#11376
 23487 СНГ 12 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. 1.8 — Bipolar SMD PNP — — 1Вт 100 pieces. — 1А 250МГц 25
Transistor 3P328A-2
Transistor 3P328A-2
#11195
 23319 СНГ 11 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. 0.1 КТ-21 Field SMD MOS n-channel 6В 1мА 50мВт 120pcs — — 8ГГц —
Transistor 2T831V
Transistor 2T831V
#16614
 28852 СНГ 11 шт
44 грн.
10+41,80 грн.
50+39,60 грн.
100+35,20 грн.
Main technical characteristics of the 2T831V transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 80 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 2 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 25; • Rke us - Saturation resistance between collector and emitter: no more than 0.6 Ohm. 1 TO39 Bipolar DIP NPN — — 1Вт 100 pieces. 70В 2А 4МГц 25
Transistor KT350A
Transistor KT350A
#10810
 23000 СНГ 10 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor KT350A silicon epitaxial-planar structure pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP — — 300мВт 500pcs 15В 60мА 100МГц 200
Transistor 2T903A (=KT903A)
Transistor 2T903A (=KT903A)
#11605
 23831 СНГ 10 шт
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
Transistor 2T903A silicon mezaplanar structure npn generator. Designed for use in power amplifiers and oscillators. 22 КТЮ-3-3 Bipolar DIP NPN — — 30Вт 20pcs 60В 10А 120МГц 70
Transistor 1T403V (=GT403V)
Transistor 1T403V (=GT403V)
#16923
 29170 СНГ 10 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403V germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 45В 1,25А — 60
Transistor 2SC3751
Transistor 2SC3751
#10468
 22493 SANYO 9 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
500+15,40 грн.
2 TO220F Bipolar DIP NPN — — 25Вт 50pcs 800В 1.5А — 40