transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor 2SC3279M
Transistor 2SC3279M
#10489
 22534 MCC 30 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
500+1,75 грн.
0.3 TO92 Bipolar DIP NPN — — 750мВт 200pcs 30В 2А 150МГц 200
Transistor MP111A
Transistor MP111A
#10784
 22972 СНГ 28 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon alloyed npn amplifying low-frequency transistor with a normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 100мА 0,5МГц 30
Transistor KT382AM
Transistor KT382AM
#14423
 26632 СНГ 28 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
KT382AM transistors are silicon epitaxial planar npn amplifying structures with a normalized noise figure at a frequency of 400 MHz. Designed for use in the input and subsequent stages of high and microwave amplifiers. 0.25 КТ-14 Bipolar SMD NPN — — 100мВт 20pcs 10В 20мА 1.8ГГц 330
Transistor 2T826B (=KT826B)
Transistor 2T826B (=KT826B)
#9783
 21354 СНГ 25 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826B transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826B transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
AP9962AGH
AP9962AGH
#7959
 20363 ADVANCED POWER ELECTRONICS 24 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
download datasheet AP9962AGH pdf,146 KB 0.47 TO252 Field SMD MOS n-channel 40В 32А 27.8Вт 3000pcs — — — —
Transistor GT403B
Transistor GT403B
#10840
 23037 СНГ 24 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 150
Transistor KT826A
Transistor KT826A
#13930
 26109 СНГ 24 шт
70 грн.
10+66,50 грн.
50+63 грн.
100+56 грн.
The main technical characteristics of the transistor KT826A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 15 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 6 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 700 V (0.01 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 1 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 10... 120; • Sk - Collector junction capacitance: no more than 25 pF; • Rke us - Saturation resistance between collector and emitter: no more than 5 ohms. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor FQB16N15TM
Transistor FQB16N15TM
#17080
 29321 FAIRCHILD SEMICONDUCTOR 24 шт
32 грн.
10+30,40 грн.
50+28,80 грн.
100+25,60 грн.
1.5 D2PAK Field SMD MOS n-channel 150В 16.4А 108 Вт 50pcs — — — —
Transistor SQJ457EP-T1_GE3 (=QJ457)
Transistor SQJ457EP-T1_GE3 (=QJ457)
#17149
 29399 VISHAY 24 шт
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
0.43 PowerPAKSO-8L Field SMD MOS p-channel 60В 36А 68Вт 3000pcs — — — —
Transistor MBQ60T65PES (=60T65PES)
Transistor MBQ60T65PES (=60T65PES)
#12586
 24923 MAGNACHIP SEMICONDUCTOR 23 шт
112 грн.
10+106,40 грн.
50+100,80 грн.
100+89,60 грн.
6.5 TO247 IGBT DIP — — — 428Вт 30pcs 650В 60А — —
Transistor GT320A
Transistor GT320A
#14473
 26684 СНГ 23 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors GT320A germanium diffusion-alloy structures pnp switching. Designed for use in high frequency amplifiers and switching devices. 1.8 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 12В 150мА 80МГц 80
Transistor KT837I
Transistor KT837I
#15469
 27708 INTEGRAL 22 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
Transistor TIP115
Transistor TIP115
#10449
 22463 FAIRCHILD SEMICONDUCTOR 21 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
2.5 TO220 Bipolar DIP PNP — — 50Вт 50pcs 60В 2А — 1000
Transistor BC635
Transistor BC635
#10487
 22532 NXP 21 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
500+1,75 грн.
0.3 TO92 Bipolar DIP NPN — — 830мВт 200pcs 45В 1А 100МГц 250
Transistor 3P328A-2
Transistor 3P328A-2
#11195
 23319 СНГ 21 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. 0.1 КТ-21 Field SMD MOS n-channel 6В 1мА 50мВт 120pcs — — 8ГГц —
Transistor 2SC1923Y
Transistor 2SC1923Y
#10488
 22533 TOSHIBA 20 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.3 TO92 Bipolar DIP NPN — — 100мВт 200pcs 30В 20мА 550МГц 200
Transistor 2SC2668-O
Transistor 2SC2668-O
#10490
 22535 TOSHIBA 20 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.2 TO92S Bipolar DIP NPN — — 100мВт 200pcs 30В 20мА 550МГц 200
Transistor IRF710
Transistor IRF710
#2518
 21108 INTERNATIONAL RECTIFIER 19 шт
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
2.5 TO220AB Field DIP MOS n-channel 400В 2А 36Вт 50pcs — — — —
Transistor KT837L
Transistor KT837L
#10739
 22804 INTEGRAL 19 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 60В 7,5A 1МГц 40
Transistor P303
Transistor P303
#13778
 25957 СНГ 19 шт
13 грн.
10+12,35 грн.
50+11,70 грн.
100+10,40 грн.
Transistors P303 silicon alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP — — 10Вт 20pcs 65В 500мА 0,1МГц —
Transistor MP21B
Transistor MP21B
#16890
 29137 СНГ 19 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21B, germanium alloy pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 40В 100мА 1,5МГц 80
Transistor AP9960GM (9960GM)
Transistor AP9960GM (9960GM)
#4655
 20059 ADVANCED POWER ELECTRONICS 15 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
0.5 SO8 Field SMD MOS n-channel x2 40В 7.8А 2Вт 95pcs — — — —
AP9T18GH
AP9T18GH
#5162
 20367 ADVANCED POWER ELECTRONICS 15 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
download datasheet AP9T18GH pdf,217 KB 0.43 TO252 Field SMD MOS n-channel 20В 38А 31Вт 3000pcs — — — —
Transistor TIP111
Transistor TIP111
#10448
 22461 MOTOROLA 15 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN — — 50Вт 50pcs 80В 2А — 1000
Transistor MP21A
Transistor MP21A
#16884
 29131 СНГ 15 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21A germanium alloy pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 35В 100мА 1МГц 150
Transistor 2T371A (=KT371A)
Transistor 2T371A (=KT371A)
#6827
 22329 СНГ 14 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Silicon epitaxial-planar structure npn microwave amplifying transistors with a normalized noise figure. 0.2 КТ-14 Bipolar SMD NPN — — 100мВт 200pcs 10В 20мА 3ГГц 240
Transistor GT403I
Transistor GT403I
#10843
 23040 СНГ 14 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 50pcs 60В 1,25А — 30
Transistor KT837M
Transistor KT837M
#15471
 27710 INTEGRAL 14 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 70В 7,5A 1МГц 80
Transistor 2T321D OS(=KT321D)
Transistor 2T321D OS(=KT321D)
#11953
 24242 СНГ 13 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP — — 210мВт 100 pieces. 40В 200мА 60МГц 120
Transistor P217A
Transistor P217A
#16930
 29177 СНГ 13 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217A transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: 20... 60; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —