transistors

Results: 3670

Filter layout: |
Filters
Sort by: Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor P217
Transistor P217
#16929
 29176 СНГ 52 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Main technical characteristics of the P217 transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 30 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 0.5 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 15; • Rke nat - Saturation resistance between collector and emitter: no more than 0.5 Ohm. 11 — Bipolar DIP PNP — — 30Вт 40pcs 60В 7,5A 0,1МГц —
Транзистор FDS4435BZ
Транзистор FDS4435BZ
#16852
 29098 FAIRCHILD SEMICONDUCTOR 51 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
0.4 SO8 Field SMD MOS p-channel 30В 8.8А 2.5Вт 2500pcs — — — —
TN2524N8-G (TN5CT)
TN2524N8-G (TN5CT)
#6176
 20352 MICROCHIP TECHNOLOGY 50 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
download datasheet TN2524N8-G pdf,618 KB 0.2 SOT89-3 Field SMD MOS n-channel 240В 1А 1.6Вт 2000pcs — — — —
Transistor KT805A with fasteners
Transistor KT805A with fasteners
#9781
 21351 СНГ 50 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. Transistors KT805A, KT805B are produced in a glass-to-metal case with hard leads. The device type is indicated on the case. The mass of the transistor is not more than 24 g. Hull type: KTYU-3-20. Specifications: aA0.336.341 TU. 30 kt-282 Bipolar DIP NPN — — 30Вт 20pcs 60В 5А 20МГц 15
Transistor TIP116
Transistor TIP116
#10450
 22464 FAIRCHILD SEMICONDUCTOR 47 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
2.5 TO220 Bipolar DIP PNP — — 50Вт 50pcs 80В 2А — 1000
Transistor TIP47
Transistor TIP47
#10457
 22478 ST MICROELECTRONICS 47 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN — — 40Вт 50pcs 250В 1А 10МГц 30
Transistor TIP48
Transistor TIP48
#10458
 22479 ON SEMICONDUCTOR 46 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
500+5,60 грн.
2.5 TO220 Bipolar DIP NPN — — 40Вт 50pcs 300В 1А 10МГц 30
Transistor STD888T4 (D888)
Transistor STD888T4 (D888)
#4658
 20060 ST MICROELECTRONICS 42 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
0.5 DPAK Bipolar SMD PNP — — 15Вт 2500pcs 30В 5А — —
Transistor BC557B
Transistor BC557B
#6614
 20600 FAIRCHILD SEMICONDUCTOR 42 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP PNP — — 500мВт 4000pcs 45В 100мА — 450
Transistor TIP31C
Transistor TIP31C
#2330
 20922 NXP 41 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN — — 40Вт 50pcs 100В 3А — 50
Transistor 1T403B (=GT403B)
Transistor 1T403B (=GT403B)
#16886
 29133 СНГ 41 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Transistor 1T403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 150
Transistor P201E
Transistor P201E
#16183
 28457 СНГ 40 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Characteristics of the transistor P201E: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 100kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. 10 — Bipolar DIP PNP — — 10Вт 50pcs 30В 1.5А 0,1МГц 100
Transistor P605
Transistor P605
#16946
 29193 СНГ 40 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 30 MHz. 9.2 — Bipolar DIP PNP — — 3Вт 50pcs 40В 1.5А 30МГц 60
Transistor TIP112
Transistor TIP112
#6652
 22462 SAMSUNG 39 шт
11 грн.
10+10,45 грн.
50+9,90 грн.
100+8,80 грн.
500+7,70 грн.
2.5 TO220 Bipolar DIP NPN — — 50Вт 50pcs 100В 2А — 1000
Transistor 2T826A (=KT826A)
Transistor 2T826A (=KT826A)
#9782
 21353 СНГ 39 шт
100 грн.
10+95 грн.
50+90 грн.
100+80 грн.
Transistor silicon mezaplanar structure npn switching. Designed for use in switching devices, in DC voltage converters, high-voltage stabilizers. The 2T826A transistor is available in a metal case with glass insulators and hard leads. The device type is indicated on the case. The 2T826A transistor is produced in the form of undivided crystals with pads on the plate for hybrid integrated circuits. The type of device is indicated on the label. The mass of a transistor in a metal case is not more than 20 g, a crystal is not more than 0.01 g. Hull type: KT-9 (TO-3). Specifications: aA0.339.058 TU. 14 kt-9 Bipolar DIP NPN — — 15Вт 40pcs 700В 1А 6МГц 10
Transistor 2SC2654
Transistor 2SC2654
#10471
 22496 NEC 39 шт
9.50 грн.
10+9,02 грн.
50+8,55 грн.
100+7,60 грн.
500+6,65 грн.
2.5 TO220 Bipolar DIP NPN — — 40Вт 50pcs 100В 7А — 320
Transistor 2SC3569-Y (=KSC3569)
Transistor 2SC3569-Y (=KSC3569)
#10473
 22498 FAIRCHILD SEMICONDUCTOR 38 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
500+6,30 грн.
2 TO220F Bipolar DIP NPN — — 15Вт 50pcs 400В 2А — 80
Transistor 2N6027G
Transistor 2N6027G
#2158
 20356 ON SEMICONDUCTOR 35 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
0.3 TO92 Bipolar DIP NPN — — 300мВт 1000pcs 40В 150мА — —
Transistor TIP136
Transistor TIP136
#10453
 22469 ST MICROELECTRONICS 35 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
500+7 грн.
2.5 TO220 Bipolar DIP PNP — — 70Вт 50pcs 80В 8А — 1000
Transistor TIP145T
Transistor TIP145T
#10454
 22471 ST MICROELECTRONICS 35 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
500+7 грн.
2.5 TO220 Bipolar DIP PNP — — 80Вт 50pcs 60В 10А — 1000
Transistor 2SC2001L
Transistor 2SC2001L
#10483
 22526 NEC 35 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
500+1,75 грн.
0.3 TO92 Bipolar DIP NPN — — 600мВт 200pcs 25В 700мА 170МГц 270
Transistor MP26B
Transistor MP26B
#10813
 23006 СНГ 35 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 200мВт 100 pieces. 70В 150мА — 80
Transistor MP10A
Transistor MP10A
#10818
 23013 СНГ 35 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 30
Transistor TIP135
Transistor TIP135
#10452
 22468 PHILIPS 34 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
500+7 грн.
2.5 TO220 Bipolar DIP PNP — — 70Вт 50pcs 60В 8А — 1000
Transistor TIP146T
Transistor TIP146T
#10455
 22473 ST MICROELECTRONICS 34 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
500+7 грн.
2.5 TO220 Bipolar DIP PNP — — 80Вт 50pcs 80В 10А — 1000
Transistor TIP117
Transistor TIP117
#6653
 22465 ST MICROELECTRONICS 32 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
500+5,60 грн.
2.5 TO220 Bipolar DIP PNP — — 50Вт 50pcs 100В 2А — 1000
Transistor KT3102IM
Transistor KT3102IM
#10105
 21844 СНГ 32 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 50В 200мА — 500
Transistor 2SC1983 (=KSC1983)
Transistor 2SC1983 (=KSC1983)
#10461
 22484 FAIRCHILD SEMICONDUCTOR 32 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
500+4,90 грн.
2.5 TO220 Bipolar DIP NPN — — 30Вт 50pcs 60В 3А 20МГц 500
Transistor AP9985GM
Transistor AP9985GM
#4659
 20055 ADVANCED POWER ELECTRONICS 30 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
0.5 SO8 Field SMD MOS n-channel 40В 10А 2.5Вт 95pcs — — — —
Transistor 2SC3431
Transistor 2SC3431
#10472
 22497 NEC 30 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
500+7 грн.
NPN; 400V; 5A; 40W; h21=10-60; Usat=1V. 2.5 TO220F Bipolar DIP NPN — — 40Вт 50pcs 400В 5А — 60