transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT807A
Transistor KT807A
#14151
 26345 СНГ 104 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors silicon mezaplanarny structures npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 — Bipolar DIP NPN — — 10Вт 20pcs 100В 500мА 5МГц 45
Transistor TN6714A
Transistor TN6714A
#10492
 22537 FAIRCHILD SEMICONDUCTOR 100 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
500+2,80 грн.
0.5 TO92L Bipolar DIP NPN — — 1Вт 1000pcs 30В 1А — 250
Transistor 1T308B (=GT308B)
Transistor 1T308B (=GT308B)
#6851
 24599 СНГ 98 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. 2 — Bipolar DIP PNP — — 150мВт 100 pieces. 20В 120мА 120МГц 120
Transistor 2N5962
Transistor 2N5962
#10480
 22514 FAIRCHILD SEMICONDUCTOR 98 шт
1.20 грн.
10+1,14 грн.
50+1,08 грн.
100+0,96 грн.
500+0,84 грн.
0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 45В 100мА — 1400
Transistor MP10
Transistor MP10
#13698
 25858 СНГ 98 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. The main technical characteristics of the MP10 transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 30 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...30; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 15В 20мА 1МГц 30
Transistor YGW40N65F1
Transistor YGW40N65F1
#17177
 29427 luxin-semi 98 шт
95 грн.
10+90,25 грн.
50+85,50 грн.
100+76 грн.
6.5 TO247 IGBT DIP — — — 188Вт 30pcs 650В 40А — —
Transistor KT807B
Transistor KT807B
#11375
 23486 СНГ 94 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 — Bipolar DIP NPN — — 10Вт 100 pieces. 100В 500мА 5МГц 100
Transistor KT3107K
Transistor KT3107K
#6836
 22261 СНГ 92 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 25В 200мА 200МГц 220
Транзистор IPG16N10S4-61 (=4N1061)
Транзистор IPG16N10S4-61 (=4N1061)
#16741
 28988 INFINEON TECHNOLOGIES 91 шт
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
0.1 TDSON-8 Field SMD MOS n-channel x2 100В 16А 29Вт 5000pcs — — — —
Transistor CRG60T60AK3HD (=G60T60AK3HD)
Transistor CRG60T60AK3HD (=G60T60AK3HD)
#17176
 29426 CR MICRO 90 шт
112 грн.
10+106,40 грн.
50+100,80 грн.
100+89,60 грн.
6.5 TO247 IGBT DIP — — — 403Вт 25pcs 600В 60А — —
Transistor MP42A
Transistor MP42A
#12255
 24637 СНГ 87 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
The main technical characteristics of the MP42A transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 200 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Uкеr samples - Breakdown voltage collector-emitter at a given collector current and a given (final) resistance in the base-emitter circuit: 15 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • h21e - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 30...50; • Rke us - Saturation resistance between collector and emitter: no more than 20 ohms. 1.6 КТЮ-3-6 Bipolar DIP PNP — — 200мВт 100 pieces. 15В 200мА 1МГц 50
Transistor P213B
Transistor P213B
#14711
 26929 СНГ 87 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P213B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 40; • Rke us - Saturation resistance between collector and emitter: no more than 1.25 Ohm. 10 — Bipolar DIP PNP — — 10Вт 20pcs 30В 5А 0,15МГц 40
Transistor MP21G
Transistor MP21G
#16150
 28392 СНГ 86 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21G germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 60В 100мА 1МГц 80
Transistor YGW60N65F1A1 (=YGW60N65F1)
Transistor YGW60N65F1A1 (=YGW60N65F1)
#17178
 29428 luxin-semi 86 шт
118 грн.
10+112,10 грн.
50+106,20 грн.
100+94,40 грн.
6.5 TO247 IGBT — — — — 312Вт 30pcs 650В 60А — —
Transistor KT818V
Transistor KT818V
#10791
 22980 СНГ 85 шт
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 60Вт 100 pieces. 70В 10А 3МГц 15
Transistor MP111B
Transistor MP111B
#14145
 26336 СНГ 84 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 100мА 1МГц 45
Transistor P417
Transistor P417
#16885
 29132 СНГ 82 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Germanium diffused high-frequency (200 MHz) low-power pnp transistors. 1.8 — Bipolar DIP PNP — — 50мВт 100 pieces. 10В 10мА 200МГц 100
Transistor KT313A1
Transistor KT313A1
#11374
 23485 СНГ 80 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Silicon transistors, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP — — 300мВт 1000pcs 50В 350мА 200МГц 120
Transistor KT503B
Transistor KT503B
#11437
 23564 СНГ 79 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT503B silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 TO92 Bipolar DIP NPN — — 350мВт 1000pcs 25В 350мА 5МГц 240
Transistor KT626A
Transistor KT626A
#16467
 28714 СНГ 77 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Main technical characteristics of the KT626A transistor: • Transistor structure: pnp; • Рк max - Constant collector power dissipation: 6.5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 75 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (30V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 260; • Ск - Capacitance of the collector junction: no more than 150 pF; • Rke us - Saturation resistance between collector and emitter: no more than 2 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 500 ps. 0.7 TO126 Bipolar DIP PNP — — 6Вт 500pcs 45В 500мА 70МГц 40
Transistor TN3019A
Transistor TN3019A
#10493
 22538 FAIRCHILD SEMICONDUCTOR 76 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.5 TO92L Bipolar DIP NPN — — 1Вт 250pcs 80В 1А 100МГц 300
Transistor FDS8896
Transistor FDS8896
#12579
 24916 FAIRCHILD SEMICONDUCTOR 66 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
0.4 SO8 Field SMD MOS n-channel 30В 15А 2.5Вт 2000pcs — — — —
Transistor KT837U
Transistor KT837U
#16662
 28901 INTEGRAL 65 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors are silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 40В 7,5A 1МГц 80
BSP295
BSP295
#5456
 20354 INFINEON TECHNOLOGIES 63 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
download datasheet BSP295 pdf,453 KB 0.3 SOT223 Field SMD MOS n-channel 60В 1.8А 1.8Вт 1000pcs — — — —
Transistor P216G
Transistor P216G
#16926
 29173 СНГ 63 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Main technical characteristics of the P216G transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 50 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 2 mA; • h21Э - Static current transfer coefficient for the common emitter circuit in large signal mode: >5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP — — 24Вт 20pcs 50В 7,5A 0,1МГц —
Transistor 1T308A (=GT308A)
Transistor 1T308A (=GT308A)
#6848
 29130 СНГ 61 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistors 1T308A germanium diffusion-alloy structures pnp universal. Designed for use in oscillators, power amplifiers, pulse devices. 1.8 КТЮ-3-3 Bipolar DIP PNP — — 150мВт 100 pieces. 15В 120мА 120МГц 75
Transistor 1T905A
Transistor 1T905A
#14616
 26832 СНГ 60 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistors 1T905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. The main technical characteristics of the transistor 1T905A: • Structure: pnp • Рк max - Constant power dissipation of the collector: 6 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 30 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 75 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 35...100; • Sk - Collector junction capacitance: no more than 200 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.17 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. 3.5 — Bipolar DIP PNP — — 6Вт 50pcs 65В 3А 30МГц 100
Transistor MP101A
Transistor MP101A
#16893
 29140 СНГ 58 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors MP101B silicon alloy npn amplifying low-frequency with non-standard MP101, MP101B and standard MP101A noise figures at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 10В 20мА 0,5МГц 30
Transistor P210V
Transistor P210V
#12951
 25222 СНГ 57 шт
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
Transistors P210V germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for common emitter circuit in large signal mode: more than 10. 34 — Bipolar DIP PNP — — 45Вт 10 pieces. 45В 12А — 10
Transistor P306M
Transistor P306M
#15477
 27717 СНГ 57 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors P306M germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 2.5 TO220 Bipolar DIP PNP — — 10Вт 100 pieces. 60В 400мА 1МГц 25