transistors

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
Transistor KT837E
Transistor KT837E
#10809
 22999 INTEGRAL 178 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Transistors silicon epitaxial-diffusion structures pnp switching. Designed for use in amplifiers and switching devices. 2.5 TO220 Bipolar DIP PNP — — 30Вт 100 pieces. 55В 7,5A 1МГц 150
Transistor P217V
Transistor P217V
#16932
 29179 СНГ 166 шт
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
Main technical characteristics of the P217V transistor: • Transistor structure: pnp • Рк t max - Continuous dissipated power of the collector with heat sink: 24 W; • fh21э - Limit frequency of the transistor current transfer coefficient for circuits with a common emitter: not less than 0.1 MHz; • Uкбо проб - Collector-base breakdown voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo prob - Breakdown voltage emitter-base at a given reverse emitter current and open collector circuit: 15 V; • Iк max - Maximum permissible direct collector current: 7.5 A; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA; • h21э - Static current transfer coefficient of the transistor in small signal mode for circuits with a common emitter: more than 5; • Rke nat - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 11 — Bipolar DIP PNP — — 24Вт 40pcs 60В 7,5A 0,1МГц —
Transistor FDMC8010DC
Transistor FDMC8010DC
#17147
 29397 ON SEMICONDUCTOR 163 шт
43 грн.
10+40,85 грн.
50+38,70 грн.
100+34,40 грн.
0.43 PQFN3.3X3.3 Field SMD MOS n-channel 30В 157А 50Вт 3000pcs — — — —
Transistor GT403A
Transistor GT403A
#10839
 23036 СНГ 159 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP — — 4Вт 100 pieces. 30В 1,25А — 60
Transistor P307VM
Transistor P307VM
#14350
 26558 СНГ 158 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon npn transistor for operation in broadcasting receivers and transceiver equipment. 0.5 TO126 Bipolar DIP NPN — — 250мВт 1000pcs 60В 30мА 20МГц 150
Transistor KT3117A1
Transistor KT3117A1
#9736
 21146 СНГ 154 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Transistor NPN 60V 0.4A 0.3W 200MHz TO92 (KT-26) 0.4 TO92 Bipolar DIP NPN — — 500мВт 500pcs 60В 400мА 200МГц 40
Transistor KT342BM
Transistor KT342BM
#13767
 25933 СНГ 153 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
The main technical characteristics of the transistor KT342BM: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500; • Sk - Collector junction capacitance: no more than 8 pF; • Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm; • tk - Time constant of the feedback circuit at high frequency: no more than 200 ps. 0.3 TO92 Bipolar DIP NPN — — 250мВт 1000pcs 25В 50мА 300МГц 500
Transistor P201AE
Transistor P201AE
#16182
 28456 СНГ 151 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Characteristics of the P201AE transistor: PNP structure Uk-e.max. 22V Uk-b.max. 30V Ik.max (permanent) 1.5A Ib.max. (permanent) 0.75A Pk.max. (without heatsink) 1.0W Pk.max. (with heat sink) 10W Switching power, max 30W Ik.obr., at t=+20ºC no more than 0.02-0.4mA Ik.obr., at t=+60ºC no more than 0.2-3.5mA h21e 40..100 fgr. 200kHz Ub-e.us 0.5-2.0V Uk-e.us 0.5-2.5V Temperature range -55..+70°C. 10 — Bipolar DIP PNP — — 10Вт 50pcs 30В 1.5А 0,2МГц 100
MMBT3906(2A)
MMBT3906(2A)
#6430
 20426 BL Galaxy Electrical 149 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.1 SOT23 Bipolar SMD PNP — — 250мВт 3000pcs 40В 200мА — 300
Transistor 2SC945
Transistor 2SC945
#2208
 20492 UTC 143 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP NPN — — 250мВт 500pcs 50В 150мА 100МГц 600
Transistor MBQ40T65QESTH (=40T65QES)
Transistor MBQ40T65QESTH (=40T65QES)
#17078
 29323 MAGNACHIP SEMICONDUCTOR 140 шт
80 грн.
10+76 грн.
50+72 грн.
100+64 грн.
IGBT 650V 40A 230W + Diode 6.5 TO247 IGBT DIP — — — 230Вт 30pcs 650В 40А — —
Transistor P417A
Transistor P417A
#11887
 24140 СНГ 139 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Germanium diffusion high-frequency (200 MHz) low power pnp transistors. 1.8 — Bipolar DIP PNP — — 50мВт 100 pieces. 10В 10мА 200МГц 200
Transistor 2N4403
Transistor 2N4403
#6596
 22515 FAIRCHILD SEMICONDUCTOR 135 шт
1.20 грн.
10+1,14 грн.
50+1,08 грн.
100+0,96 грн.
500+0,84 грн.
0.25 TO92 Bipolar DIP PNP — — 625мВт 1000pcs 40В 600мА — 300
Phototransistor KTF104A
Phototransistor KTF104A
#11586
 23817 СНГ 135 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Silicon planar npn phototransistor with a photosensitive element area of 0.64 mm2 is produced in a plastic case. 0.2 — Photo — NPN — — — 200pcs — — — —
Transistor P216D
Transistor P216D
#14718
 26936 СНГ 135 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the transistor P216D: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 50 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 15... 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP — — 24Вт 20pcs 50В 7,5A 0,1МГц 30
Transistor KT361A
Transistor KT361A
#6843
 24622 СНГ 134 шт
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Designed for use in high frequency amplifiers. 0.2 КТ-13 Bipolar DIP PNP — — 150мВт 1000pcs 25В 50мА 250МГц 90
Transistor 2SA1273
Transistor 2SA1273
#10482
 22522 KEC 134 шт
2.50 грн.
10+2,37 грн.
50+2,25 грн.
100+2 грн.
500+1,75 грн.
0.5 TO92MOD Bipolar DIP PNP — — 1Вт 200pcs 30В 2А 120МГц 320
Transistor 2N2222A
Transistor 2N2222A
#9670
 20876 FAIRCHILD SEMICONDUCTOR 129 шт
1 грн.
10+0,95 грн.
50+0,90 грн.
100+0,80 грн.
500+0,70 грн.
0.3 TO92 Bipolar DIP NPN — — 625мВт 1000pcs 40В 600мА 300МГц 100
Transistor P306
Transistor P306
#11879
 24132 СНГ 128 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistors P306 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. 10 — Bipolar DIP PNP — — 10Вт 40pcs 60В 400мА — 25
Transistor 2SC2328Y (=KSC2328A)
Transistor 2SC2328Y (=KSC2328A)
#2169
 22521 TOSHIBA 119 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.5 TO92L — DIP NPN — — 1Вт 200pcs 30В 2А 120МГц 320
Transistor MP111
Transistor MP111
#11391
 23502 СНГ 118 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 150мВт 100 pieces. 20В 100мА 0,5МГц 25
STK0260
STK0260
#4379
 20971 AUK 116 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
download datasheet STK0260 pdf,477 KB 2 TO220F Field DIP MOS n-channel 600В 600мА 1.3Вт 50pcs — — — —
Transistor P216B
Transistor P216B
#14715
 26933 СНГ 115 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
The main technical characteristics of the P216B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. 10 — Bipolar DIP PNP — — 24Вт 20pcs 30В 7,5A 0,1МГц 10
Transistor MP102
Transistor MP102
#16894
 29141 СНГ 115 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors MP102 silicon alloy npn amplifying low-frequency with non-standard noise figure at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN — — 100мВт 100 pieces. 10В 20мА 0,5МГц 45
Transistor 2SB892
Transistor 2SB892
#2376
 22523 SANYO 114 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
500+2,80 грн.
0.5 TO92L Bipolar DIP PNP — — 1Вт 200pcs 60В 2А 150МГц 560
Transistor 2SA970
Transistor 2SA970
#2368
 22510 TOSHIBA 112 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
500+2,80 грн.
0.3 TO92 Bipolar DIP PNP — — 300мВт 200pcs 120В 100мА 100МГц 375
Transistor 2SB764
Transistor 2SB764
#10484
 22527 TOSHIBA 111 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.5 TO92L Bipolar DIP PNP — — 900мВт 200pcs 60В 1А 150МГц 320
Transistor P210B
Transistor P210B
#12950
 25221 СНГ 110 шт
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
P210B Transistors P210B germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A. • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 10 34 — Bipolar DIP PNP — — 45Вт 10 pieces. 65В 12А — 10
Transistor 2SC2655Y
Transistor 2SC2655Y
#2172
 22529 TOSHIBA 108 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
500+2,10 грн.
0.5 TO92L Bipolar DIP NPN — — 900мВт 200pcs 50В 2А 100МГц 240
Transistor assembly 2TS393B-1
Transistor assembly 2TS393B-1
#11638
 23868 СНГ 104 шт
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. 2 — Bipolar SMD PNPx2 — — 20мВт 200pcs 15В 20мА 500МГц 140