Transistor KT342BM
| Manufacturer | СНГ |
| SKU | |
| Categories | Domestic transistors |
| Type | Description | |
|---|---|---|
| Brand name | СНГ | |
| Structure | NPN | |
| Transistor type | Bipolar | |
| Power | 250мВт | |
| Transistor case type | TO92 | |
| Mounting type | DIP | |
| Weight g. | 0.3 | |
| Factory packaging | 1000pcs | |
| Collector-emitter voltage | 25В | |
| Collector current | 50мА | |
| Current gain | 500 | |
| Frequency | 300МГц |
The main technical characteristics of the transistor KT342BM:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 250 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 50 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500;
• Sk - Collector junction capacitance: no more than 8 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm;
• tk - Time constant of the feedback circuit at high frequency: no more than 200 ps.
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