Transistor KT342BM

Manufacturer СНГ
SKU 25933
Categories Domestic transistors
Features
Type Description
Brand name СНГ
Structure NPN
Transistor type Bipolar
Power 250мВт
Transistor case type TO92
Mounting type DIP
Weight g. 0.3
Factory packaging 1000pcs
Collector-emitter voltage 25В
Collector current 50мА
Current gain 500
Frequency 300МГц
Description

The main technical characteristics of the transistor KT342BM:
• Transistor structure: npn;
• Рк max - Constant power dissipation of the collector: 250 mW;
• fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz;
• Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V;
• Ik max - Maximum allowable DC collector current: 50 mA;
• Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.05 μA;
• h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 200... 500;
• Sk - Collector junction capacitance: no more than 8 pF;
• Rke us - Saturation resistance between collector and emitter: no more than 10 Ohm;
• tk - Time constant of the feedback circuit at high frequency: no more than 200 ps.