Transistor KT819VM

Main technical characteristics of the KT819VM transistor:
• Transistor structure: npn; • Рк max - Constant collector power dissipation: 2 W;
• Pk t max - Constant power dissipation of the collector with heat sink: 100 W;
• fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz;
• Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 70 V (0.1 kOhm);
• Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V;
• Iк max - Maximum permissible direct collector current: 15 A;
• Iк and max - Maximum permissible pulse current of the collector: 20 A;
• Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 1 mA (40V);
• h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 15;
• Rke us - Saturation resistance between collector and emitter: no more than 0.4 Ohm.