Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Appointment Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Number of windings Appointment
21428 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— KR198NT5A Manufactured using bipolar technology with dielectric insulation. KR198NT5A microcircuits are a matrix of pnp transistors. Contains 5 integral elements. 1 DIP14 — — DIP Transistor Assembly — — — — 100 pieces. — — — — — —
21377 СНГ —
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
— Delay time 50 ns (typical), supply voltage 3-18 V 2 JK triggers Housing: 238.16-1 (DIP16) Import analog: CD4027B 1.1 DIP16 — — DIP Logics — — — — 90pcs — — — — — —
24934 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Eight-channel multiplexer. 1.1 DIP16 — — DIP Logics — — — — 90pcs — — — — — —
22022 СНГ —
28 грн.
10+26,60 грн.
50+25,20 грн.
100+22,40 грн.
— Wideband operational differential amplifier with high input impedance and increased speed. 0.5 DIP8 — — DIP Amplifiers — — — — 200pcs — — — — — —
21240 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Logic element 8I-NOT. 1 DIP14 — — DIP Logics — — — — 100 pieces. — — — — — —
21241 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— 2 logical elements 4I-NOT. 1 DIP14 — — DIP Logics — — — — 100 pieces. — — — — — —
22134 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Dual four-channel multiplexer. 1.3 DIP16 — — DIP Logics — — — — 90pcs — — — — — —
21404 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Multipurpose register (8 x 4 bits) 3.5 DIP24 — — DIP Logics — — — — 180pcs — — — — — —
26507 СНГ —
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
— DC differential amplifier. 1 DIP14 — — DIP Amplifiers — — — — 100 pieces. — — — — — —
— СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Cascade amplifier with operating frequency up to 5 MHz. 1 DIP14 — — DIP Amplifiers — — — — 100 pieces. — — — — — —
22108 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Cascade amplifier with operating frequency up to 5 MHz. 1 DIP14 — — DIP Amplifiers — — — — 100 pieces. — — — — — —
28276 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Medium-precision broadband op-amp with increased speed, low input currents, internal frequency correction and FETs at the input. 0.5 DIP8 — — DIP Amplifiers — — — — 200pcs — — — — — —
23002 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP20A germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — КТЮ-3-3 Bipolar DIP — PNP — — 150мВт 100 pieces. 20В 50мА 2МГц 150 — —
25662 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.15 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 1.8 — КТЮ-3-3 Bipolar DIP — NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 50 — —
25678 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— NPN structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 30 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 15…30 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.15 1.8 — КТЮ-3-3 Bipolar DIP — NPN — — 150мВт 100 pieces. 30В 20мА 1МГц 30 — —
23004 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— KP327B silicon planar transistor with two insulated gates protected by diodes and an n-type channel 0.3 — КТ-29 Field SMD — MOS n-channel 14В 30мА 200мВт 100 pieces. — — — — — —
— СНГ —
56 грн.
— Трансформатор выходной магнитолы Рекорд-301,310,311,314 — — — — DIP — — — — — 1 PC. — — — — 2 Звук
— СНГ —
60 грн.
— 86 г. — — — — DIP — — — — — — — — — — — 400Гц
— СНГ —
60 грн.
— 86 г. — — — — DIP — — — — — — — — — — — 400Гц
— СНГ —
60 грн.
— 82-87 г. — — — — DIP — — — — — — — — — — — 400Гц
— СНГ —
60 грн.
— 85 г. — — — — DIP — — — — — — — — — — — 400Гц
— СНГ —
60 грн.
— 85,86 г. — — — — DIP — — — — — — — — — — — 400Гц
26623 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
— Transistors KT808AM silicon mezaplanar structures npn high-voltage, switching. Designed for use in switching devices, horizontal scanning generators, electronic voltage regulators. 13 — TO3 Bipolar DIP — NPN — — 70Вт 20pcs 130В 10А 8МГц 125 — —
24617 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP41 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — PNP — — 150мВт 100 pieces. 15В 30мА 1МГц 60 — —
23011 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP15A germanium alloyed pnp universal low-frequency low-power. Designed for small low frequency signal amplification, amplification, switching, pulse shaping 1.8 — КТЮ-3-3 Bipolar DIP — PNP — — 150мВт 100 pieces. 15В 20мА 2МГц 100 — —
25861 СНГ —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
— PNP structure Max. e.g. k-b at a given reverse current to and open circuit e. (Ukbo max), V 15 Max. e.g. k-e at a given current to and a given resist. in the circuit b-e. (Uker max), V 15 The maximum allowable current to (Ik max, A) 0.2 Static current transfer coefficient h21e min 45…100 Limiting frequency of the current transfer coefficient fgr, MHz 1 Maximum dissipated power k (Pk, W) 0.2 1.6 — КТЮ-3-6 Bipolar DIP — PNP — — 200мВт 100 pieces. 15В 200мА 1МГц 100 — —
23029 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Transistor P416B germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 — КТЮ-3-3 Bipolar DIP — PNP — — 100мВт 100 pieces. 12В 25мА 80МГц 200 — —
23553 СНГ —
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
— Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 — КТ-13 Bipolar DIP — NPN — — 150мВт 800 pcs. 20В 100мА 250МГц 350 — —
22330 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
— Transistors GT905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. 5 — — Bipolar DIP — PNP — — 6Вт 50pcs 65В 7А 30МГц 100 — —
23590 СНГ —
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
— 0.3 — TO92 Bipolar DIP — PNP — — 300мВт 1000pcs 50В 200мА 200МГц 450 — —