Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Working current, A Material Plug or socket Number of contacts Mechanical installation Type Diode design
23029 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor P416B germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 12В 25мА 80МГц 200
23553 СНГ
2 грн.
10+1,90 грн.
50+1,80 грн.
100+1,60 грн.
Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. 0.25 КТ-13 Bipolar DIP NPN 150мВт 800 pcs. 20В 100мА 250МГц 350
22330 СНГ
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistors GT905A germanium diffusion-alloy structures pnp universal. Designed for use in switching and pulse amplifying devices, in the output stages of low-frequency power amplifiers. 5 Bipolar DIP PNP 6Вт 50pcs 65В 30МГц 100
23590 СНГ
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
0.3 TO92 Bipolar DIP PNP 300мВт 1000pcs 50В 200мА 200МГц 450
СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
P-FET Structure Maximum drain-source voltage Usi, V 10 Maximum gate-source voltage Uzi max., V 10 Maximum dissipated power Psi max., W 0.007 Slope of characteristic S, mA/V 0.4…2.4 Housing KT-17 0.7 Field DIP 125мВт 200pcs
22958 СНГ
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 50 μA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 45 pF at Uobr 100 V 1.5 КД-16 200V 1A Rectifier 200pcs single
28429 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Max. allowable reverse voltage, V: 100 Maximum direct forward current, mA: 300 Maximum operating frequency, kHz: 1 Recovery time, ms: 0.385 0.4 DIP 100V 300mA Rectifier 200pcs single
СНГ
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
83 г. DIP 10 pieces. Set 8 For a fee MRN
СНГ
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
DIP 10 pieces. Set 5 per wire RP
23307 СНГ
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Medium power silicon zener diode, 180V The main technical parameters of the KS680A zener diode: • Rated stabilization voltage: 180 V at Ist 25 mA; • Stabilization voltage spread: 162... 198 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 330 Ohm at Ist 30 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 28 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +125 °С 1.5 Screw 5Вт 100 pieces. 180V ks620
28436 СНГ
20 грн.
12 DIP 100V 10A 50pcs
25850 СНГ
14 грн.
Maximum reverse voltage, V 300 Maximum repetitive impulse voltage in the closed state, V 300 The maximum average value of the current in the open state for the period, A 2 Maximum repetitive pulse current in the open state, A 30 Maximum voltage in the open state, V 2 The smallest constant control current required to turn on the thyristor, A 0.1 The smallest repetitive pulse control current required to turn on the thyristor, A 0.35 Trigger control voltage corresponding to the minimum DC trigger current, V 6 Triggering control voltage corresponding to the minimum pulse repetitive triggering current, V 10 Critical rate of voltage rise in the closed state, V /ms 5 Critical rate of current rise in the open state, A /ms 3 Turn-on time, ms 10 Turn-off time, ms 100 Working temperature, C -60…85 Features non-lockable 11 Screw 300V 30A 40pcs
СНГ
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 300V 5A 40pcs
24006 СНГ
200 грн.
Accuracy class - 0.5; Voltage drop across potential terminals for all shunts at rated current is 75mV; Rated current - 750A; Limits of permissible basic error of the shunt - ± 0.5%. 800 Screw 1 PC.
23770 СНГ
4 грн.
20+3,60 грн.
50+3,20 грн.
100+3 грн.
200+2,80 грн.
Material ceramic Rated voltage, V 250 Rated operating current, A 0.25 Cylindrical contacts Case length, mm 15 Case diameter, mm 4 Operating temperature, С -60…100 0.3 250 4 15 DIP 200pcs 0.25 Ceramics
24241 СНГ
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
KT602AM Transistors silicon planar structures npn. Designed to generate and amplify signals. 1.2 TO126 Bipolar DIP NPN 2.8Вт 100 pieces. 100В 75мА 150МГц 80
21249 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KM155IE8 microcircuits are a frequency divider with a variable division ratio. 1.3 DIP16 DIP Logics 90pcs
21248 СНГ
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
K155IE8 microcircuits are a frequency divider with a variable division ratio. 1.1 DIP16 DIP Logics 90pcs
21297 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KM155LP5 microcircuits are 4 two-input XOR logic elements. 1 DIP16 DIP Logics 100 pieces.
21296 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
K155LP5 microcircuits are 4 two-input XOR logic elements. 1 DIP14 DIP Logics 100 pieces.
22121 СНГ
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
4 tri-state buffer elements with a common bus. 1 DIP14 DIP Logics 100 pieces.
21401 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Four logical elements exclusive OR. 1 DIP14 DIP Logics 100 pieces.
22119 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
2 logic elements 2OR with a powerful open collector output. 0.5 DIP8 DIP Logics 200pcs
22096 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Four-bit register with three output states. 1.1 DIP16 DIP Logics 90pcs
21292 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
K155LN1 microcircuits are 6 logical NOT elements. 1 DIP14 DIP Logics 100 pieces.
21274 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Six trigger Schmitt inverters. 1 DIP14 DIP Logics 100 pieces.
21343 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Integrated circuit of the TTL series. Chips KM155TM2 are 2 D-flip-flops. Contains 70 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes KM155TM2: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С 1 DIP14 DIP Logics 100 pieces.
21989 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
2 D flip-flops. 1 DIP14 DIP Logics 100 pieces.
21345 СНГ
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
KM155TM5 microcircuits are 4 D-flip-flops. 1 DIP14 DIP Logics 100 pieces.
21346 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
4 D flip-flops with direct and inverted outputs. 1.1 DIP16 DIP Logics 90pcs