Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Rated capacity, μF Working voltage, V Rated capacity tolerance,% Working temperature, С Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Appointment Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Resistance Resistor power Accuracy Resistor housing type Curve Height (length), mm Outside diameter, mm Inner diameter, mm Permeability Core type Material
28747 СНГ 864 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 5.1 kOhm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 5,1 кОм 0.5 W 10 % metal film
28746 СНГ 3584 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 1.2 kOhm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 1,2 кОм 0.5 W 10 % metal film
28745 СНГ 2200 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 5.6 kOhm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 5,6 кОм 0.5 W 5 % metal film
28744 СНГ 32404 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313V OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 Bipolar DIP PNP 100мВт 100 pieces. 15В 30мА 350МГц 230
28743 СНГ 3452 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313B OS germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 Bipolar DIP PNP 100мВт 100 pieces. 15В 30мА 450МГц 75
28742 СНГ 22626 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313B germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 Bipolar DIP PNP 100мВт 100 pieces. 15В 30мА 450МГц 75
28741 СНГ 59575 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 1T313A germanium diffusion-alloy structures pnp universal. Designed for use in high and ultra high frequency amplifiers and switching devices. 1.2 Bipolar DIP PNP 100мВт 100 pieces. 15В 30мА 300МГц 230
28740 СНГ 43 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor S2-33N-0.5 10 kOhm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 10 кОм 0.5 W 5 % metal film
28739 СНГ 780 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 8.2 Ohm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 8,2 Ом 0.5 W 10 % metal film
28737 СНГ 1490 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor S2-33N-0.5 2.7 kOhm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 2,7 кОм 0.5 W 5 % metal film
28736 СНГ 1301 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor S2-33N-0.5 47 Ohm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 47 Ом 0.5 W 5 % metal film
28735 СНГ 1196 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 47 Ohm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 47 Ом 0.5 W 10 % metal film
28734 СНГ 410 шт
0.50 грн.
100+0,40 грн.
500+0,30 грн.
1000+0,25 грн.
Resistor MLT-0.25 3.9 kOhm (+/-10%). 0.2 Flexible Leads 2.5 7 DIP 500pcs 3,9 кОм 0.25 W 10 % metal film
28733 СНГ 133 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor OMLT-0.5 1.5 kOhm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 1,5 кОм 0.5 W 5 % metal film
28732 СНГ 2048 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 3.3 kOhm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 3,3 кОм 0.5 W 10 % metal film
28731 СНГ 477 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 150 Ohm (+/-10%). 0.5 Flexible Leads 4 10 DIP 500pcs 150 Ом 0.5 W 10 % metal film
28728 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321E silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP 210мВт 100 pieces. 40В 200мА 60МГц 200
28727 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321D silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP 210мВт 100 pieces. 40В 200мА 60МГц 120
28726 СНГ 2 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
KT321G silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP 210мВт 100 pieces. 40В 200мА 60МГц 60
28724 СНГ 685 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
Niobium oxide semiconductor capacitors OSK53-4AV, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of the OSK53-4AV series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. 1.5 Flexible Leads 22 6.3 20 -60..+85 4 13 DIP 180pcs
28719 СНГ 350 шт
45 грн.
50+40,50 грн.
200+36 грн.
Aluminum oxide-electrolytic capacitors. Designed to work in DC, pulsating current circuits and in pulse modes. 66 hard conclusions 470 160 +50% -20% -40…+85 30 63 DIP 25pcs
28718 СНГ 18 шт
1 грн.
100+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Resistor MLT-0.5 300 Ohm (+/-5%). 0.5 Flexible Leads 4 10 DIP 500pcs 43 Ом 0.5 W 5 % metal film
28714 СНГ 77 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Main technical characteristics of the KT626A transistor: • Transistor structure: pnp; • Рк max - Constant collector power dissipation: 6.5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 75 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 45 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (30V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 40... 260; • Ск - Capacitance of the collector junction: no more than 150 pF; • Rke us - Saturation resistance between collector and emitter: no more than 2 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 500 ps. 0.7 TO126 Bipolar DIP PNP 6Вт 500pcs 45В 500мА 70МГц 40
28713 СНГ 205 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Stabilizer with fixed output voltage 12V, 1A 2.8 TO-220 DIP Nutrition 100 pieces.
28657 СНГ 376 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Multiplier/divider KR525PS1A (Kvazar-IS) 4-square analogue. signal multiplier (AD532), DIP14 Characteristics: 1. Multiplication error with external adjustment: 2% 2. Nonlinearity of multiplication across inputs X and Y: 2% 3. Residual voltage at input X: 50 mV 4. Residual voltage at input Y: 100 mV 5. Displacement EMF at inputs X and Y: 500 mV 6.Maximum output differential voltage: ±12V 7. Maximum common mode voltage on X and Y inputs: ±11.5K 8. Current consumption: 4.6mA 9. Input current for X and Y inputs: 8 µA 10. Input current difference between inputs X and Y: 1 µA 11. Output current difference: 50 µA. 1 DIP14 DIP ADC 400pcs
28551 СНГ 936 шт
70 грн.
10+63 грн.
50+56 грн.
100+52,50 грн.
Variable resistor SP3-33-46 22 kOhm 0.25 W gr. A (double with separate regulation, without nut). 14 hard conclusions DIP 85шт. 22 кОм 0.25 W 20 % A
28550 СНГ 993 шт
15 грн.
10+13,50 грн.
50+12 грн.
100+11,25 грн.
Variable resistor SP3-400``a``M 68 kOhm A shaft 4/20 6.5 hard conclusions DIP 100 pieces. 68 кОм 0.125 W 20 % A
28549 СНГ 663 шт
15 грн.
10+13,50 грн.
50+12 грн.
100+11,25 грн.
Variable resistor SP3-400``a``M 1 MOhm A shaft 4/12 6 hard conclusions DIP 100 pieces. 1,0 МОм 0.125 W 20 % A
28548 СНГ 258 шт
15 грн.
10+13,50 грн.
50+12 грн.
100+11,25 грн.
Variable resistor SP3-400``a``M 10 kOhm A shaft 4/12 6 hard conclusions DIP 100 pieces. 10 кОм 0.125 W 20 % A
28540 СНГ 22 шт
4 грн.
20+3,60 грн.
50+3,40 грн.
100+3,20 грн.
500+2,40 грн.
1000+2 грн.
M400NN, K12x6x4.5, Ferrite ring core. 2 3000pcs 4,5 12 6 М400НН Ring Ferrite