Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Rated capacity, μF | Working voltage, V | Rated capacity tolerance,% | Working temperature, С | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Curve | Working current, A | Material | Number of windings | Polarization | Winding supply current | Plug or socket | Number of contacts | Mechanical installation | Type | Contact set | Diode design |
|---|
Microcircuit KZh101V
#16665
|
28904 | СНГ | 30 шт |
24 грн.
|
|
The DC stabilizer KZh101V is a silicon, planar, n-channel DMOS transistor with a built-in channel. | 0.5 | — | DIP8 | — | — | — | — | — | — | — | — | DIP | — | — | Nutrition | — | — | — | 400pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Connector OSRG1N-1-4-V
#16651
|
28920 | СНГ | 18 шт |
40 грн.
|
|
Volumetric mounting connectors OSRG1N-1-4-V are designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) and pulsed current with voltage up to 400 V. | 5 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 12 | To the body | RG | — | — | ||||||||||
Connector OSRG1N-1-5-V
#16649
|
28918 | СНГ | 8 шт |
40 грн.
|
|
Volumetric mounting connectors OSRG1N-1-5-V are designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) and pulsed current with voltage up to 400 V. | 6.5 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 16 | To the body | RG | — | — | ||||||||||
Zener diode D809
#16631
|
28869 | СНГ | 4 шт |
3 грн.
|
|
Zener diodes D809 are silicon, alloy, medium power. Designed to stabilize voltage 8.0-9.5 V in the range of stabilization currents 3...29 mA. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip KZh101A
#16630
|
28868 | СНГ | 12 шт |
24 грн.
|
|
DC stabilizer KZH101A is a silicon, planar, n-channel DMOS transistor with a built-in channel. | 0.5 | — | DIP8 | — | — | — | — | — | — | — | — | DIP | — | — | Nutrition | — | — | — | 400pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Zener diode KS510A
#16629
|
28867 | СНГ | 39 шт |
6 грн.
|
|
Zener diodes KS510A are silicon, planar, medium power. Designed to stabilize a rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | — | 10V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 28860 | СНГ | 802 шт |
2 грн.
|
|
ONP-KG-22 connectors are designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) pulse currents for printed circuit wiring. The operating current for each contact is 3 A. Maximum operating voltage - no more than 1250 V Contact pitch is 5 mm. | 1 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 4 | For a fee | ONP | — | — | |||||||||||
Diode D245B
#16620
|
28858 | СНГ | 5 шт |
28 грн.
|
|
Main technical characteristics of the D245B diode: • Uobp max - Maximum constant reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1.5 V at Inp 5 A; • Iobp - Constant reverse current: no more than 3000 µA at Uobp 300 V. | 13 | — | — | — | — | — | — | — | — | — | — | Screw | 300V | 5A | — | Rectifier | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
| 28853 | СНГ | 45 шт |
8 грн.
|
|
Ketchman composite single-turn, with circular movement of the moving system, in a cylindrical body. Designed to work in circuits of direct, alternating and pulsed currents. | 0.4 | Flexible Leads | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | 1,5 кОм | 0.5 W | 20 % | — | — | — | A | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor 2T831V
#16614
|
28852 | СНГ | 11 шт |
44 грн.
|
|
Main technical characteristics of the 2T831V transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 5 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 4 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 80 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 2 A; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 25; • Rke us - Saturation resistance between collector and emitter: no more than 0.6 Ohm. | 1 | — | — | — | — | — | — | — | — | TO39 | Bipolar | DIP | — | — | — | — | NPN | 1Вт | 100 pieces. | 70В | 2А | 4МГц | 25 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT840B
#16613
|
28851 | СНГ | 3 шт |
30 грн.
|
|
Main technical characteristics of the KT840B transistor: • Transistor structure: npn; • Ркт max - Constant power dissipation of the collector with heat sink: 60 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 8 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 750 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 6 A; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 3 mA (750V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. | 17.5 | — | — | — | — | — | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | NPN | 60Вт | 40pcs | 350В | 6А | 8МГц | 10 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 28890 | СНГ | 26 шт |
80 грн.
|
Rated voltage 27 V Voltage range 22 - 36 V Winding resistance 1580 - 2185 Ω Response time 3 ms Release time 2 ms Trigger current 8 mA Release current 1.6 mA. | 3 | — | — | — | 27 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 48pcs | — | — | — | — | — | — | — | — | — | — | — | 1 | — | 1 | neutral | Constant | — | — | — | — | 1 switch | — | ||||||||||||
| 28889 | СНГ | 615 шт |
60 грн.
|
Rated voltage 27 V Voltage range 22 - 36 V Winding resistance 1580 - 2185 Ω Response time 3 ms Release time 2 ms Trigger current 8 mA Release current 1.6 mA. | 3 | — | — | — | 27 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 48pcs | — | — | — | — | — | — | — | — | — | — | — | 1 | — | 1 | neutral | Constant | — | — | — | — | 1 switch | — | ||||||||||||
| 28888 | СНГ | 79 шт |
5 грн.
|
|
Capacitors K53-14, aluminum oxide semiconductor. Designed for operation in DC and pulsating current circuits. Polar, they have low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 2.5 | Flexible Leads | — | 15 | 16 | 20 | -60...+85 | 7 | 16 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Zener diode 2S518A
#16533
|
28781 | СНГ | 2 шт |
12 грн.
|
|
Main technical parameters of the 2S518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 200 Ohm at Ist 1 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 45 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | — | 18V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Zener diode 2S433A
#16532
|
28780 | СНГ | 3 шт |
14 грн.
|
|
Main technical parameters of the 2S433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 60 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1...0%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 14 Ohms at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 229 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating ambient temperature range: -60... +100 °C | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | — | 3V3 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Zener diode 2S456A
#16531
|
28779 | СНГ | 1 шт |
15 грн.
|
|
Main technical parameters of the zener diode 2S456A: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...+0.05%/°C; • Differential resistance of the zener diode: 10 Ohm at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 167 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +100 °C. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | — | 5V6 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Zener diode 2S447A
#16530
|
28778 | СНГ | 3 шт |
12 грн.
|
|
Main technical parameters of the zener diode 2S447A: • Rated stabilization voltage: 4.7 V at Ist 43 mA; • Stabilization voltage spread: 4.23... 5.17 V; • Temperature coefficient of stabilization voltage: -0.08%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 18 Ohms at Ist 30 mA; • Minimum permissible stabilization current: 3 mA; • Maximum permissible stabilization current: 190 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +100 °C. | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | — | — | — | — | 4V7 | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Zener diode D818B
#16527
|
28775 | СНГ | 2 шт |
4 грн.
|
|
Main technical parameters of the D818B zener diode: - Rated stabilization voltage: 9 V at Ist 10 mA; - Stabilization voltage range: 7.2-9 V; - Temperature coefficient of stabilization voltage: -0.020-0%/°C; - Temporary instability of stabilization voltage: ± 0.13%; - Differential resistance of the zener diode: 18 Ohms at Ist 10 mA; - Minimum permissible stabilization current: 3 mA; - Maximum permissible stabilization current: 33 mA; - Maximum permissible power dissipation on the zener diode: 0.3 W; - Operating range of ambient temperature: -60-+125 °C | 0.8 | — | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | — | — | — | — | 9V | kd-8 | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Fuse VPB6-36, 2A, 600V 50x8
#16525
|
28773 | СНГ | 123 шт |
6 грн.
|
|
Fuses (fuse links) are designed to break the electrical circuit if the current in the circuit exceeds a predetermined one. | 3.2 | — | — | — | 600 | — | — | 8 | 50 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | 2 | Glass | — | — | — | — | — | — | — | — | — | ||||||||||
| 28771 | СНГ | 442 шт |
8 грн.
|
|
Ниобиевые оксидно-полупроводниковые конденсаторы ОСК53-4АВ, полярные, герметичные в металлическом корпусе. Предназначены для работы в цепях постоянного и пульсирующего тока. Особенности конденсаторов серии ОСК53-4АВ: малые и стабильные токи утечки, большие значения удельной емкости, улучшенные температурно-частотные характеристики емкости и тангенс угла диэлектрических потерь. | 3.2 | Flexible Leads | — | 15 | 30 | 20 | -60..+85 | 7 | 12 | — | — | DIP | — | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28769 | СНГ | 3 шт |
10 грн.
|
|
Niobium oxide semiconductor capacitors K53-4AV, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of the K53-4 series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 3.5 | Flexible Leads | — | 33 | 20 | 10 | -60..+85 | 7 | 16 | — | — | DIP | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28768 | СНГ | 40 шт |
7 грн.
|
|
Niobium oxide semiconductor capacitors K53-4A, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of the K53-4A series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 3.2 | Flexible Leads | — | 15 | 30 | 20 | -60..+85 | 7 | 12 | — | — | DIP | — | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT819VM
#16516
|
28764 | СНГ | 9 шт |
75 грн.
|
|
Main technical characteristics of the KT819VM transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 2 W; • Pk t max - Constant power dissipation of the collector with heat sink: 100 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 70 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 15 A; • Iк and max - Maximum permissible pulse current of the collector: 20 A; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 1 mA (40V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 15; • Rke us - Saturation resistance between collector and emitter: no more than 0.4 Ohm. | 16 | — | — | — | — | — | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | NPN | 100Вт | 20pcs | 70В | 20А | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Thyristor 2U203G (=KU203G)
#16511
|
28759 | СНГ | 12 шт |
30 грн.
|
Main technical parameters of thyristor 2U203D: • Repetitive pulse voltage: 200 V; • Repetitive impulse voltage in closed state: 200 V; • Maximum repetitive pulse current in open state: 100 A; • Average pulse current in open state: 5 A; • Pulse voltage in open state: no more than 2 V; • Non-unlocking constant control voltage: not less than 0.1 V; • Direct current in closed state: no more than 10 mA; • Constant reverse current: no more than 10 mA; • Unlocking constant control current: no more than 450 mA; • Constant unlocking control voltage: no more than 2.5 V; • Pulse unlocking control voltage: 10 V; • Rate of voltage rise in the closed state: no more than 20 V/µs; • Turn-on time: no more than 3 μs; • Turn-off time: no more than 7 μs; • Operating range of ambient temperature: -60... +125 °C. | 33 | — | — | — | — | — | — | — | — | — | — | DIP | — | 10A | — | — | — | 20Вт | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28758 | СНГ | 83 шт |
5 грн.
|
Flange for attaching a powerful transistor to a radiator. The flange is suitable for mounting the following transistors: KT802, KT803, KT805, KT808, KT809 KT903, KT908 GT806 P210 Thyristors KU203, D238 And some other semiconductor products. | 5 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||||
| 28751 | СНГ | 22 шт |
1 грн.
|
|
Resistor MLT-0.5 100 Ohm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | 4 | 10 | — | — | DIP | — | — | — | — | — | — | 500pcs | — | — | — | — | 100 Ом | 0.5 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28750 | СНГ | 170 шт |
1 грн.
|
|
Resistor MLT-0.5 5.6 kOhm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | 4 | 10 | — | — | DIP | — | — | — | — | — | — | 500pcs | — | — | — | — | 5,6 кОм | 0.5 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28749 | СНГ | 136 шт |
1 грн.
|
|
Resistor MLT-0.5 10 kOhm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | 4 | 10 | — | — | DIP | — | — | — | — | — | — | 500pcs | — | — | — | — | 10 кОм | 0.5 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 28748 | СНГ | 391 шт |
1 грн.
|
|
Resistor MLT-0.5 56 kOhm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | 4 | 10 | — | — | DIP | — | — | — | — | — | — | 500pcs | — | — | — | — | 56 кОм | 0.5 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
