Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Rated capacity, μF Working voltage, V Rated capacity tolerance,% Working temperature, С Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Appointment Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Resistance Resistor power Accuracy Resistor housing type Stabilization voltage Zener diode housing type Curve Working current, A Number of windings Polarization Winding resistance, Ohm Maximum switching voltage Winding supply current Plug or socket Number of contacts Mechanical installation Type Contact set
24288 СНГ 960 шт
4.20 грн.
50+3,78 грн.
200+3,36 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 1.8 Flexible Leads 220 6.3 +80% -20% -25...+70 6 28 DIP 100 pieces.
24287 СНГ 88 шт
9.10 грн.
50+8,19 грн.
200+7,28 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 4.5 Flexible Leads 1000 6.3 +50% -20% -25...+70 9 40 DIP 90pcs
24286 СНГ 1623 шт
8.40 грн.
50+7,56 грн.
200+6,72 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 4.5 Flexible Leads 1000 6.3 +80% -20% -25...+70 9 40 DIP 90pcs
24285 СНГ 370 шт
6.80 грн.
50+6,12 грн.
200+5,44 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 3.2 Flexible Leads 470 16 +80% -20% -25...+70 9 28 DIP 60pcs
24282 СНГ 71 шт
30 грн.
50+27 грн.
200+24 грн.
Capacitors K50-24 aluminum foil sealed polar capacitors with liquid electrolyte. Designed for operation in DC, pulsating current circuits and in pulsed modes, they are used in power supply filters, in shunt decoupling circuits at low frequencies. Capacitors are produced in cylindrical aluminum cases with a plastic cover with multidirectional leads. 30 Flexible Leads 10000 6.3 +80% -20% -25...+70 21 48 DIP 36pcs
24281 СНГ 381 шт
18 грн.
13 10 DIP 4 things. 0.1 1 neutral 760 30v Constant 2 short circuit
24279 СНГ 412 шт
25 грн.
4.5 5 DIP 10 pieces. 0.5 1 neutral 67 36v AC/DC 1 switch
24268 СНГ 2 шт
180 грн.
Output power amplifiers for turning on the windings of EMU, MU, intermediate relays, signal lamps. Matching amplifiers to expand the load capacity of logic elements. 135 DIP 1 PC.
24267 СНГ 1 шт
180 грн.
Converting a smoothly varying input voltage to a discrete output signal. 135 DIP 1 PC.
24265 СНГ 1 шт
180 грн.
Three independent circuits of diode attachments. 135 DIP 1 PC.
24264 СНГ 2 шт
160 грн.
Two three - input circuits. 135 DIP 1 PC.
24259 СНГ 930 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 47V The main technical parameters of the Zener diode D816D: • Stabilization voltage spread: 42.5... 51.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 15 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 110 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 4.2 Screw 5Вт 100 pieces. 47V ks620
24258 СНГ 1909 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 33V The main technical parameters of the Zener diode D816V: • Stabilization voltage spread: 29.5... 36 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 10 Ohm; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 150 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 Screw 5Вт 100 pieces. 33V ks620
24257 СНГ 617 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 27V The main technical parameters of the Zener diode D816B: • Stabilization voltage spread: 24.2... 29.5 V at Ist 150 mA; • Temperature coefficient of stabilization voltage: 0.12%/°С; • Temporary stabilization voltage instability: ± 5%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 8 ohms; • Minimum allowable stabilization current: 10 mA; • Maximum allowable stabilization current: 180 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 2.5 Screw 5Вт 100 pieces. 27V ks620
24256 СНГ 346 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 22V 4.2 Screw 5Вт 100 pieces. 22V ks620
24253 СНГ 1282 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 100V The main technical parameters of the Zener diode D817G: • Stabilization voltage spread: 90... 110 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 50 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 50 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Working range of ambient temperature: -60... +120 °С. 3.5 Screw 5Вт 100 pieces. 100V ks620
24252 СНГ 1 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 68V 3.5 Screw 5Вт 100 pieces. 68V ks620
24251 СНГ 565 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 3.5 Screw 5Вт 100 pieces. 56V ks620
24250 СНГ 339 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistors MP116 silicon alloyed pnp amplifying low-frequency with non-normalized noise factor. Designed to amplify low frequency signals. 1.5 КТЮ-3-6 Bipolar DIP PNP 150мВт 100 pieces. 15В 10мА 0,5МГц 100
24242 СНГ 13 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321D silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP 210мВт 100 pieces. 40В 200мА 60МГц 120
24240 СНГ 6 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistors 2T321B silicon, epitaxial-planar structures pnp pulse. Designed for use in pulse amplifiers and switching devices. 1.5 КТЮ-3-6 Bipolar DIP PNP 210мВт 100 pieces. 50В 200мА 60МГц 120
24237 СНГ 18 шт
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
H1515XM1 Number of digital cells 3036, library of digital cells 25, frequency 8MHz, 4.5-5.5V, 1.0mA. 2.5 QFP64 SMD Processors 50pcs
24236 СНГ 8014 шт
0.50 грн.
100+0,40 грн.
500+0,30 грн.
1000+0,25 грн.
Resistors with a carbon conductive layer. 0.2 Flexible Leads DIP 200pcs 120 кОм 0.125 W 5 % carbon
24235 СНГ 20014 шт
0.50 грн.
100+0,40 грн.
500+0,30 грн.
1000+0,25 грн.
Resistors with a carbon conductive layer. 0.2 Flexible Leads DIP 200pcs 120 кОм 0.125 W 10 % carbon
24233 СНГ 48 шт
42 грн.
10+39,90 грн.
20+37,80 грн.
50+35,70 грн.
100+33,60 грн.
RMG42B30Sh2V1 are designed to work in electric circuits of direct, alternating (frequency up to 3 MHz) currents. 30 DIP 48pcs Fork 20 To the body RMG
24232 СНГ 47 шт
52 грн.
10+49,40 грн.
20+46,80 грн.
50+44,20 грн.
100+41,60 грн.
RMG42B30Sh2V1 are designed to work in electric circuits of direct, alternating (frequency up to 3 MHz) currents. 50 DIP 14pcs Fork 30 To the body RMG
24231 СНГ 509 шт
90 грн.
10+85,50 грн.
50+81 грн.
100+72 грн.
0.7 SO16 SMD Telephony 40pcs
24228 СНГ 269 шт
2 грн.
10+1,80 грн.
50+1,60 грн.
100+1,50 грн.
SP3-38b 0.125 W tuning resistor. 0.5 hard conclusions DIP 300pcs 220 кОм 0.125 W 20 % A
24184 СНГ 6900 шт
0.50 грн.
100+0,40 грн.
500+0,30 грн.
1000+0,25 грн.
Resistors with a carbon conductive layer. 0.2 Flexible Leads DIP 200pcs 56 Ом 0.125 W 10 % carbon
24182 СНГ 185 шт
0.50 грн.
100+0,40 грн.
500+0,30 грн.
1000+0,25 грн.
Resistor constant metal film (MFR). 0.2 Flexible Leads DIP 200pcs 160 Ом 0.125 W 5 % metal film