Diodes domestic
Diode bridges domestic
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Domestic thyristors
Domestic zener diodes
Microcircuits are imported
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Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
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High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
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HC49
HC6U
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Switches, buttons
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Brand «СНГ»

Results: 4144

Sort by: New & Popular Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Pin type Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Frequency Type of shell Current gain Capacity Accuracy Stabilization voltage Zener diode housing type Working current, A Material Number of windings Color LED type Appointment Diode design LED purpose
Quartz 6144 kHz (RK-169)
Quartz 6144 kHz (RK-169)
#11469
 23601 СНГ 424 шт
11 грн.
10+9,90 грн.
50+8,80 грн.
Quartz 6144 kHz (RK-169). 1.3 — — — — — — — DIP — — — — — — — 50pcs — — — 6.144MHz РК-169 — — — — — — — — — — — — —
Discharger R-72
Discharger R-72
#11468
 23600 СНГ 1260 шт
14 грн.
10+12,60 грн.
50+11,20 грн.
100+10,50 грн.
The R-72 protective two-electrode arrester provides protection for circuits of communication line equipment, radio-electronic equipment from dangerous overvoltages resulting from lightning discharges, electromagnetic radiation, accidental contacts with power lines. Specifications: OD0.339.354 TU Static breakdown voltage ........ 1000 ±150V Dimensions ........ 10x7.2 mm. 2 — — — — — — — DIP — — — — — — — 900pcs — — — — — — — — — — — — — — — — — —
Capacitor MBM 0.05 uF 160 V
Capacitor MBM 0.05 uF 160 V
#11461
 23593 СНГ 67 шт
2.50 грн.
Capacitors MBM paper metallized compacted insulated. 1 Flexible Leads — 160 — — — — DIP — — — — — — — 209pcs — — — — — — 50nF (0.05µF) 10 % — — — — — — — — — —
Chip ARF3.438.007 (=EP007)
Chip ARF3.438.007 (=EP007)
#11458
 23588 СНГ 27 шт
455 грн.
10+432,25 грн.
50+409,50 грн.
100+364 грн.
The microassembly is a control and monitoring device for output voltages in secondary power supplies. 16 — — — — — — — DIP — — — Nutrition — — — 50pcs — — — — — — — — — — — — — — — — — —
Transformer TIM115V
Transformer TIM115V
#11456
 23586 СНГ 195 шт
37 грн.
1 — — — — — — — DIP — — — — — — — 100 pieces. — — — — — — — — — — — — 3 — — Импульсный — —
Transformer BTI 1-50V "OS"
Transformer BTI 1-50V "OS"
#11455
 23585 СНГ 615 шт
11 грн.
Designed for use in microelectronic equipment with an operating voltage of up to 10 V and a product of the pulse duration and the input voltage from 1.0 to 50.0 µs × V. 2 — — — — — — — SMD — — — — — — — 30pcs — — — — — — — — — — — — — — — Импульсный — —
Chip EA1533IR23
Chip EA1533IR23
#11454
 23584 СНГ 80 шт
64 грн.
10+60,80 грн.
50+57,60 грн.
100+51,20 грн.
8-bit register on D-flip-flops with dynamic input. 0.6 — SO20 — — — — — SMD — — — Logics — — — 75pcs — — — — — — — — — — — — — — — — — —
Diode KD221V
Diode KD221V
#11453
 23583 СНГ 592 шт
0.80 грн.
50+ 0,72 грн.
200+ 0,64 грн.
500+ 0,56 грн.
Diodes KD221V silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 — — — — — — — DIP КД-5А 400V 300mA — Rectifier — — 1000pcs — — — — — — — — — — — — — — — — single —
Zener diode D815E
Zener diode D815E
#11452
 23582 СНГ 2366 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes D815E silicon, diffusion-alloy, average power 15V. The main technical parameters of the Zener diode D815E: • Stabilization voltage spread: 13.3... 16.4 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.1%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 2.5 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 550 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 4.2 — — — — — — — Screw — — — — — — 8Вт 100 pieces. — — — — — — — — 15V ks620 — — — — — — — —
Transistor KT209B
Transistor KT209B
#11446
 23574 СНГ 210 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
0.3 — — — — — TO92 Bipolar DIP — — — — — PNP 350мВт 1000pcs 15В 350мА — — — 120 — — — — — — — — — — — —
Transistor KT209K
Transistor KT209K
#11443
 23571 СНГ 2 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
0.3 — — — — — TO92 Bipolar DIP — — — — — PNP 350мВт 1000pcs 45В 350мА — — — 160 — — — — — — — — — — — —
Transistor KT503B
Transistor KT503B
#11437
 23564 СНГ 79 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistors KT503B silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. 0.3 — — — — — TO92 Bipolar DIP — — — — — NPN 350мВт 1000pcs 25В 350мА 5МГц — — 240 — — — — — — — — — — — —
Diode KD221A
Diode KD221A
#11432
 23550 СНГ 130 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD221A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 — — — — — — — DIP КД-5А 100V 700mA — Rectifier — — 500pcs — — — — — — — — — — — — — — — — single —
LED AL102GM
LED AL102GM
#11430
 23547 СНГ 10 шт
3 грн.
50+2,70 грн.
200+2,55 грн.
500+2,25 грн.
The main technical parameters of the LED AL102GM: • Color of radiation (glow): red; • Light intensity: not less than 0.4 cd/m2; • DC forward voltage: no more than 2.8 V; • Maximum spectral distribution: 0.69 µm; • Maximum allowable direct forward current: 20 mA; • Maximum pulse current at a given pulse duration: 60 mA at 2 ms; • The maximum allowable reverse DC voltage: 2 V; • The maximum allowable pulsed reverse DC voltage: 2 V. 0.3 — — — — — — — DIP — — — — — — — 200pcs — — — — — — — — — — — — — Red 5mm round — — Indication
Zener diode KS126D1
Zener diode KS126D1
#11427
 23544 СНГ 335 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 5.1V 0.45W. 0.2 — — — — — — — DIP — — — — — — 450мВт 500pcs — — — — — — — — 5V1 kd2 — — — — — — — —
Zener diode KS433A
Zener diode KS433A
#11425
 23542 СНГ 561 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Zener diodes KS433A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...191 mA. The main technical parameters of the KS433A zener diode: • Rated stabilization voltage: 3.3 V at Ist 30 mA; • Stabilization voltage spread: 2.97... 3.63 V; • Temperature coefficient of stabilization voltage: -0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 191 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.7 — — — — — — — DIP — — — — — — 1Вт 500pcs — — — — — — — — 3V3 kd-8 — — — — — — — —
Zener diode KS139A stack.
Zener diode KS139A stack.
#11424
 23541 СНГ 3705 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Silicon zener diode, diffusion-alloy, low power. 0.2 — — — — — — — DIP — — — — — — 300мВт 500pcs — — — — — — — — 3V9 kd-4 — — — — — — — —
Zener diode KS182Ts stack.
Zener diode KS182Ts stack.
#11423
 23540 СНГ 75 шт
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
— 0.2 — — — — — — — DIP — — — — — — 125мВт 500pcs — — — — — — — — 8V2 kd2 — — — — — — — —
Zener diode KS175A2
Zener diode KS175A2
#11422
 23539 СНГ 3432 шт
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
— 0.2 — — — — — — — DIP — — — — — — 150мВт 200pcs — — — — — — — — 7V5 kd2 — — — — — — — —
Zener diode KS533A
Zener diode KS533A
#11421
 23538 СНГ 211 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
The main technical parameters of the KS533A zener diode: • Rated stabilization voltage: 33 V at Ist 10 mA; • Stabilization voltage spread: 29.7... 36.3 V; • Temperature coefficient of stabilization voltage: ±0.1%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 100 Ohm at Ist 3 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 17 mA; • Maximum allowable power dissipation on the zener diode: 0.64 W; • Working range of ambient temperature: -40... +125 °С. 0.4 — — — — — — — DIP — — — — — — 640мВт 200pcs — — — — — — — — 33V — — — — — — — — —
Zener diode KS168A stack.
Zener diode KS168A stack.
#11417
 23534 СНГ 1464 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
Zener diodes KS168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. 0.2 — — — — — — — DIP — — — — — — 300мВт 1000pcs — — — — — — — — 6V8 kd-4 — — — — — — — —
KDS111B, Diode assembly
KDS111B, Diode assembly
#11414
 23531 СНГ 134 шт
2.50 грн.
50+2,25 грн.
200+2 грн.
500+1,75 грн.
Diode assembly, each consisting of two diodes connected with a common anode. 0.3 — — — — — — — DIP — 300V 200mA — Rectifier — — 250pcs — — — — — — — — — — — — — — — — double common anode —
Quartz 31.250MHz
Quartz 31.250MHz
#11411
 23528 СНГ 27 шт
12 грн.
10+10,80 грн.
50+9,60 грн.
— 1.5 — — — — — — — DIP — — — — — — — 48pcs — — — 31.250MHz HC49 — — — — — — — — — — — — —
Zener diode 2S600A (=KS600A)
Zener diode 2S600A (=KS600A)
#11401
 23512 СНГ 15 шт
11 грн.
50+9,90 грн.
100+8,80 грн.
250+8,25 грн.
Zener diodes 2S600A silicon, planar, medium power. Designed to stabilize the rated voltage of 100 V in the stabilization current range of 1...8.1 mA. 0.8 — — — — — — — DIP — — — — — — 1Вт 100 pieces. — — — — — — — — 100V kd-8 — — — — — — — —
Diode D229A
Diode D229A
#11392
 23503 СНГ 21 шт
6 грн.
50+5,40 грн.
200+4,80 грн.
500+4,20 грн.
Diodes D229A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 3.5 — — — — — — — Screw — 200V 400mA — Rectifier — — 100 pieces. — — — — — — — — — — — — — — — — single —
Transistor MP111
Transistor MP111
#11391
 23502 СНГ 118 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 — — — — — КТЮ-3-3 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 20В 100мА 0,5МГц — — 25 — — — — — — — — — — — —
Diode KD221B
Diode KD221B
#11390
 23501 СНГ 759 шт
0.70 грн.
50+ 0,63 грн.
200+ 0,56 грн.
500+ 0,49 грн.
Diodes KD221B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 — — — — — — — DIP КД-5А 200V 500mA — Rectifier — — 500pcs — — — — — — — — — — — — — — — — single —
Diode KD209A green
Diode KD209A green
#11389
 23500 СНГ 198 шт
1 грн.
50+ 0,90 грн.
200+ 0,80 грн.
500+ 0,70 грн.
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 0.3 — — — — — — — DIP КД-5А 400V 700mA — Rectifier — — 500pcs — — — — — — — — — — — — — — — — single —
Fuse 5x20 PM-1A
Fuse 5x20 PM-1A
#11379
 23490 СНГ 116 шт
1.50 грн.
20+1,35 грн.
50+1,20 грн.
100+1,12 грн.
200+1,05 грн.
— 0.3 — — 250 5 20 — — Clamp — — — — — — — 1000pcs — — — — — — — — — — 1 Glass — — — — — —
Fuse 5x20 PM-0.15A
Fuse 5x20 PM-0.15A
#11378
 23489 СНГ 765 шт
1.50 грн.
20+1,35 грн.
50+1,20 грн.
100+1,12 грн.
200+1,05 грн.
— 0.3 — — 250 5 20 — — Clamp — — — — — — — 1000pcs — — — — — — — — — — 0.15 Glass — — — — — —