Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Working voltage, V Case diameter D, mm Body length L, mm Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Frequency Type of shell Current gain Stabilization voltage Zener diode housing type Working current, A Material Number of windings Polarization Winding resistance, Ohm Maximum switching voltage Winding supply current Plug or socket Number of contacts Mechanical installation Type Contact set Appointment Series Inductance Diode design
23531 СНГ 134 шт
2.50 грн.
50+2,25 грн.
200+2 грн.
500+1,75 грн.
Diode assembly, each consisting of two diodes connected with a common anode. 0.3 — — — — — — DIP — 300V 200mA — Rectifier — — — — 250pcs — — — — — — — — — — — — — — — — — — — — — — — double common anode
23528 СНГ 27 шт
12 грн.
10+10,80 грн.
50+9,60 грн.
— 1.5 — — — — — — DIP — — — — — — — — — 48pcs — — — 31.250MHz HC49 — — — — — — — — — — — — — — — — — — —
23512 СНГ 15 шт
11 грн.
50+9,90 грн.
100+8,80 грн.
250+8,25 грн.
Zener diodes 2S600A silicon, planar, medium power. Designed to stabilize the rated voltage of 100 V in the stabilization current range of 1...8.1 mA. 0.8 — — — — — — DIP — — — — — — — — 1Вт 100 pieces. — — — — — — 100V kd-8 — — — — — — — — — — — — — — — —
23503 СНГ 21 шт
6 грн.
50+5,40 грн.
200+4,80 грн.
500+4,20 грн.
Diodes D229A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 3.5 — — — — — — Screw — 200V 400mA — Rectifier — — — — 100 pieces. — — — — — — — — — — — — — — — — — — — — — — — single
23502 СНГ 118 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 — — — — КТЮ-3-3 Bipolar DIP — — — — — NPN — — 150мВт 100 pieces. 20В 100мА 0,5МГц — — 25 — — — — — — — — — — — — — — — — — —
23501 СНГ 759 шт
0.70 грн.
50+0,63 грн.
200+0,56 грн.
500+0,49 грн.
Diodes KD221B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. 0.3 — — — — — — DIP КД-5А 200V 500mA — Rectifier — — — — 500pcs — — — — — — — — — — — — — — — — — — — — — — — single
23500 СНГ 186 шт
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
Diodes KD209A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1 kHz. 0.3 — — — — — — DIP КД-5А 400V 700mA — Rectifier — — — — 500pcs — — — — — — — — — — — — — — — — — — — — — — — single
23490 СНГ 116 шт
1.50 грн.
20+1,35 грн.
50+1,20 грн.
100+1,12 грн.
200+1,05 грн.
— 0.3 — 250 5 20 — — Clamp — — — — — — — — — 1000pcs — — — — — — — — 1 Glass — — — — — — — — — — — — — —
23489 СНГ 765 шт
1.50 грн.
20+1,35 грн.
50+1,20 грн.
100+1,12 грн.
200+1,05 грн.
— 0.3 — 250 5 20 — — Clamp — — — — — — — — — 1000pcs — — — — — — — — 0.15 Glass — — — — — — — — — — — — — —
23487 СНГ 12 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. 1.8 — — — — — Bipolar SMD — — — — — PNP — — 1Вт 100 pieces. — 1А 250МГц — — 25 — — — — — — — — — — — — — — — — — —
23486 СНГ 94 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 — — — — — Bipolar DIP — — — — — NPN — — 10Вт 100 pieces. 100В 500мА 5МГц — — 100 — — — — — — — — — — — — — — — — — —
23485 СНГ 80 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Silicon transistors, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 — — — — TO92 Bipolar DIP — — — — — PNP — — 300мВт 1000pcs 50В 350мА 200МГц — — 120 — — — — — — — — — — — — — — — — — —
23482 СНГ 1462 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.3 — — — — TO92 Bipolar DIP — — — — — NPN — — 250мВт 500pcs 25В 25мА 300МГц — — 25 — — — — — — — — — — — — — — — — — —
23472 СНГ 7 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
KR5001GP1 microcircuits are an electronic two-tone bell and are designed to replace electromechanical bells in telephone sets and other devices that require the generation of signal sound signals. 0.5 DIP8 — — — — — DIP — — — Telephony — — — — — 100 pieces. — — — — — — — — — — — — — — — — — — — — — — — —
23441 СНГ 2 шт
120 грн.
10+114 грн.
50+108 грн.
100+96 грн.
Optoelectronic semiconductor microcircuits 249KN1A, consisting of optocouplers and transistor interrupters controlled by them. 1.3 — — — — — — DIP — — — Keys — — — — — 20pcs — — — — — — — — — — — — — — — — — — — — — — — —
23440 СНГ 158 шт
2.50 грн.
High-frequency fixed inductance chokes of the DPM type are designed for operation in special-purpose equipment, household appliances, and also as part of noise suppression filters. 1.3 — — — — — — DIP — — — — — — — — — 100 pieces. — — — — — — — — 2.4 — 1 — — — — — — — — — Дроссель ДПМ 20uH —
23438 СНГ 93 шт
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 25 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Fork 22 To the body RP — — — — —
23437 СНГ 494 шт
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 22 — — — — — — DIP — — — — — — — — — 50pcs — — — — — — — — — — — — — — — Socket 22 To the body RP — — — — —
23435 СНГ 222 шт
24 грн.
10+22,80 грн.
20+21,60 грн.
50+20,40 грн.
100+19,20 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 16 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Fork 15 To the body RP — — — — —
23434 СНГ 84 шт
24 грн.
10+22,80 грн.
20+21,60 грн.
50+20,40 грн.
100+19,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 16 — — — — — — DIP — — — — — — — — — 50pcs — — — — — — — — — — — — — — — Fork 15 To the body RP — — — — —
23352 СНГ 166 шт
45 грн.
50+40,50 грн.
200+36 грн.
500+31,50 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 — — — — — — Screw — 8kV 500mA — High voltage — — — — 20pcs — — — — — — — — — — — — — — — — — — — — — — — assembly
23350 СНГ 135 шт
60 грн.
Sheathed, two-position, single-stable, with four changeover contacts DC relay, designed for switching DC and AC electrical circuits with a frequency of 50 ... 1000 Hz. 34 — 60 — — — — DIP — — — — — — — — — 10 pieces. — — — — — — — — 0.3 — 1 neutral 2700 500v Constant — — — — 4 switches — — — —
23349 СНГ 296 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 — — — — — Bipolar DIP — — — — — PNP — — 3Вт 50pcs 40В 1.5А 30МГц — — 120 — — — — — — — — — — — — — — — — — —
23320 СНГ 8 шт
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 — — — — — — Screw — 200V 5A — — — — — — 40pcs — — — — — — — — — — — — — — — — — — — — — — — —
23319 СНГ 21 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. 0.1 — — — — КТ-21 Field SMD — — — — — MOS n-channel 6В 1мА 50мВт 120pcs — — 8ГГц — — — — — — — — — — — — — — — — — — — — —
23318 СНГ 47 шт
70 грн.
10+63 грн.
50+59,50 грн.
100+56 грн.
The switch is biscuit, 3 provisions, 6 groups. 34 — — — — — — DIP — — — — — — — — — 50pcs — — — — — — — — — — — — — — — — — — — — — — — —
23317 СНГ 68 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Fork 15 To the body RP — — — — —
23316 СНГ 26 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Fork 15 To the body RP — — — — —
23315 СНГ 5 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Fork 15 To the body RP — — — — —
23311 СНГ 87 шт
18 грн.
10+17,10 грн.
20+16,20 грн.
50+15,30 грн.
100+14,40 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 — — — — — — DIP — — — — — — — — — 20pcs — — — — — — — — — — — — — — — Socket 15 To the body RP — — — — —