Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Working current, A | Number of windings | Polarization | Winding resistance, Ohm | Maximum switching voltage | Winding supply current | Plug or socket | Number of contacts | Mechanical installation | Type | Contact set | Appointment | Series | Inductance | Diode design |
|---|
|
Transistor KT629A
#11376
|
23487 | СНГ | 12 шт |
7 грн.
|
|
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. | 1.8 | — | — | — | Bipolar | SMD | — | — | — | — | PNP | — | — | 1Вт | 100 pieces. | — | 1А | 250МГц | 25 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT807B
#11375
|
23486 | СНГ | 94 шт |
15 грн.
|
|
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. | 2.5 | — | — | — | Bipolar | DIP | — | — | — | — | NPN | — | — | 10Вт | 100 pieces. | 100В | 500мА | 5МГц | 100 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT313A1
#11374
|
23485 | СНГ | 80 шт |
3 грн.
|
|
Silicon transistors, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. | 0.3 | — | — | TO92 | Bipolar | DIP | — | — | — | — | PNP | — | — | 300мВт | 1000pcs | 50В | 350мА | 200МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor KT339AM
#11372
|
23482 | СНГ | 1462 шт |
3 грн.
|
|
Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. | 0.3 | — | — | TO92 | Bipolar | DIP | — | — | — | — | NPN | — | — | 250мВт | 500pcs | 25В | 25мА | 300МГц | 25 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip KR5001GP1
#11365
|
23472 | СНГ | 7 шт |
14 грн.
|
|
KR5001GP1 microcircuits are an electronic two-tone bell and are designed to replace electromechanical bells in telephone sets and other devices that require the generation of signal sound signals. | 0.5 | DIP8 | — | — | — | DIP | — | — | Telephony | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Chip 249KN1A
#11335
|
23441 | СНГ | 2 шт |
120 грн.
|
|
Optoelectronic semiconductor microcircuits 249KN1A, consisting of optocouplers and transistor interrupters controlled by them. | 1.3 | — | — | — | — | DIP | — | — | Keys | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Throttle DPM2.4-20
#11334
|
23440 | СНГ | 158 шт |
2.50 грн.
|
High-frequency fixed inductance chokes of the DPM type are designed for operation in special-purpose equipment, household appliances, and also as part of noise suppression filters. | 1.3 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | 2.4 | 1 | — | — | — | — | — | — | — | — | — | Дроссель | ДПМ | 20uH | — | |||||||||||
|
Connector RP10-22-V (plug)
#11333
|
23438 | СНГ | 93 шт |
30 грн.
|
|
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 25 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 22 | To the body | RP | — | — | — | — | — | ||||||||||
|
Connector RP10-22 (socket)
#11332
|
23437 | СНГ | 494 шт |
30 грн.
|
|
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 22 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 22 | To the body | RP | — | — | — | — | — | ||||||||||
|
Connector RP10-15"З" (plug)
#11330
|
23435 | СНГ | 222 шт |
24 грн.
|
|
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 16 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | — | — | — | — | — | ||||||||||
|
Connector RP10-15L (plug)
#11329
|
23434 | СНГ | 84 шт |
24 грн.
|
|
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 16 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | — | — | — | — | — | ||||||||||
|
Rectifier pole KTS201G
#11218
|
23352 | СНГ | 166 шт |
45 грн.
|
|
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. | 63 | — | — | — | — | Screw | 8kV | 500mA | — | High voltage | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | assembly | ||||||||||
| 23350 | СНГ | 135 шт |
60 грн.
|
Sheathed, two-position, single-stable, with four changeover contacts DC relay, designed for switching DC and AC electrical circuits with a frequency of 50 ... 1000 Hz. | 34 | — | 60 | — | — | DIP | — | — | — | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | 0.3 | 1 | neutral | 2700 | 500v | Constant | — | — | — | — | 4 switches | — | — | — | — | ||||||||||||
|
Transistor P605A
#11215
|
23349 | СНГ | 326 шт |
15 грн.
|
|
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. | 9.2 | — | — | — | Bipolar | DIP | — | — | — | — | PNP | — | — | 3Вт | 50pcs | 40В | 1.5А | 30МГц | 120 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Triac 2U208B (=KU208B)
#11196
|
23320 | СНГ | 8 шт |
19 грн.
|
|
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. | 11 | — | — | — | — | Screw | 200V | 5A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor 3P328A-2
#11195
|
23319 | СНГ | 21 шт |
35 грн.
|
|
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. | 0.1 | — | — | КТ-21 | Field | SMD | — | — | — | — | MOS n-channel | 6В | 1мА | 50мВт | 120pcs | — | — | 8ГГц | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
PGM-3P6N-2*15 switch
#11194
|
23318 | СНГ | 47 шт |
70 грн.
|
|
The switch is biscuit, 3 provisions, 6 groups. | 34 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 23317 | СНГ | 68 шт |
22 грн.
|
|
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 13 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | — | — | — | — | — | |||||||||||
| 23316 | СНГ | 26 шт |
22 грн.
|
|
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 13 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | — | — | — | — | — | |||||||||||
|
Connector RP10-15L-P (plug)
#11190
|
23315 | СНГ | 5 шт |
22 грн.
|
|
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 13 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 15 | To the body | RP | — | — | — | — | — | ||||||||||
|
Connector RP10-15L (socket)
#11186
|
23311 | СНГ | 87 шт |
18 грн.
|
|
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 13 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 15 | To the body | RP | — | — | — | — | — | ||||||||||
|
Zener diode KS650A
#11185
|
23308 | СНГ | 2147 шт |
8 грн.
|
|
Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 2.5...33 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. | 1.5 | — | — | — | — | Screw | — | — | — | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 150V | ks620 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 23301 | СНГ | 109 шт |
22 грн.
|
|
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 9.2 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 80pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 11 | To the body | RP | — | — | — | — | — | |||||||||||
| 23300 | СНГ | 1 шт |
22 грн.
|
|
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. | 9.2 | — | — | — | — | DIP | — | — | — | — | — | — | — | — | 80pcs | — | — | — | — | — | — | — | — | — | — | — | — | Fork | 11 | To the body | RP | — | — | — | — | — | |||||||||||
|
Transistor GT403I
#10843
|
23040 | СНГ | 14 шт |
26 грн.
|
|
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | — | Bipolar | DIP | — | — | — | — | PNP | — | — | 4Вт | 50pcs | 60В | 1,25А | — | 30 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor GT403B
#10840
|
23037 | СНГ | 24 шт |
17 грн.
|
|
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | — | Bipolar | DIP | — | — | — | — | PNP | — | — | 4Вт | 100 pieces. | 30В | 1,25А | — | 150 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor GT403A
#10839
|
23036 | СНГ | 159 шт |
16 грн.
|
|
Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. | 3 | — | — | — | Bipolar | DIP | — | — | — | — | PNP | — | — | 4Вт | 100 pieces. | 30В | 1,25А | — | 60 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor P416A
#10834
|
23031 | СНГ | 1521 шт |
8 грн.
|
|
Transistor P416A germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. | 1.8 | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | PNP | — | — | 100мВт | 100 pieces. | 12В | 25мА | 60МГц | 125 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor P416
#10833
|
23030 | СНГ | 1293 шт |
10 грн.
|
|
Transistor P416 germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. | 1.8 | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | PNP | — | — | 100мВт | 100 pieces. | 12В | 25мА | 40МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
|
Transistor MP14
#10830
|
23026 | СНГ | 1044 шт |
7 грн.
|
|
Transistor MP14 germanium alloyed pnp universal low-frequency low-power. | 1.8 | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 40 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — |