Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea

Brand «СНГ»

Results: 4144

Sort by: New & Popular Name Price Bestsellers Customer rating Date added In stock
MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Plug or socket Number of contacts Mechanical installation Type Diode design
Zener diode KS650A
Zener diode KS650A
#11185
 23308 СНГ 2137 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 2.5...33 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. 1.5 — — — Screw — — — — — — 5Вт 100 pieces. — — — — 150V ks620 — — — — —
Connector RP10-11L-P-O (plug)
Connector RP10-11L-P-O (plug)
#11178
 23301 СНГ 109 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 — — — DIP — — — — — — — 80pcs — — — — — — Fork 11 To the body RP —
Connector RP10-11"З"-O (plug)
Connector RP10-11"З"-O (plug)
#11177
 23300 СНГ 1 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 — — — DIP — — — — — — — 80pcs — — — — — — Fork 11 To the body RP —
Transistor GT403I
Transistor GT403I
#10843
 23040 СНГ 14 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — — Bipolar DIP — — — — — PNP 4Вт 50pcs 60В 1,25А — 30 — — — — — — —
Transistor GT403B
Transistor GT403B
#10840
 23037 СНГ 24 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — — Bipolar DIP — — — — — PNP 4Вт 100 pieces. 30В 1,25А — 150 — — — — — — —
Transistor GT403A
Transistor GT403A
#10839
 23036 СНГ 159 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — — Bipolar DIP — — — — — PNP 4Вт 100 pieces. 30В 1,25А — 60 — — — — — — —
Transistor P416A
Transistor P416A
#10834
 23031 СНГ 1485 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor P416A germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 100мВт 100 pieces. 12В 25мА 60МГц 125 — — — — — — —
Transistor P416
Transistor P416
#10833
 23030 СНГ 1287 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor P416 germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 100мВт 100 pieces. 12В 25мА 40МГц 80 — — — — — — —
Transistor MP14
Transistor MP14
#10830
 23026 СНГ 1044 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14 germanium alloyed pnp universal low-frequency low-power. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 15В 20мА 1МГц 40 — — — — — — —
Transistor MP14A
Transistor MP14A
#10829
 23025 СНГ 1909 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14A germanium alloyed pnp universal low-frequency low-power. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 30В 20мА 1МГц 40 — — — — — — —
Transistor MP21D
Transistor MP21D
#10821
 23017 СНГ 2 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor MP21D germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 60В 100мА 0,7МГц 200 — — — — — — —
Transistor MP13B
Transistor MP13B
#10820
 23016 СНГ 1206 шт
9 грн.
10+8,55 грн.
50+8,10 грн.
100+7,20 грн.
Transistor MP13B germanium alloyed pnp universal low-frequency low-power. Designed to amplify small low-frequency signals, amplify, switch, pulse shaping. The main technical characteristics of the MP13B transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 45...100; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 15В 20мА 1МГц 60 — — — — — — —
Transistor MP10A
Transistor MP10A
#10818
 23013 СНГ 35 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor MP10A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 30В 20мА 1МГц 30 — — — — — — —
Transistor MP20B
Transistor MP20B
#10817
 23012 СНГ 1 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP20B germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 30В 50мА 2МГц 200 — — — — — — —
Transistor MP25B
Transistor MP25B
#10816
 23009 СНГ 182 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP25B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 200мВт 100 pieces. 40В 150мА — 80 — — — — — — —
Transistor MP25A
Transistor MP25A
#10815
 23008 СНГ 2968 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP25A germanium alloy pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 200мВт 100 pieces. 40В 150мА — 50 — — — — — — —
Transistor MP25
Transistor MP25
#10814
 23007 СНГ 457 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP25 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 200мВт 100 pieces. 40В 150мА — 25 — — — — — — —
Transistor MP26B
Transistor MP26B
#10813
 23006 СНГ 25 шт
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP26B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 200мВт 100 pieces. 70В 150мА — 80 — — — — — — —
Transistor MP26A
Transistor MP26A
#10812
 23005 СНГ 10084 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor MP26A germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 200мВт 100 pieces. 70В 150мА — 50 — — — — — — —
Transistor MP14B
Transistor MP14B
#10811
 23001 СНГ 258 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14B germanium alloyed pnp universal low-frequency low-power. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 30В 20мА 1МГц 60 — — — — — — —
Transistor KT350A
Transistor KT350A
#10810
 23000 СНГ 10 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor KT350A silicon epitaxial-planar structure pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 — TO92 Bipolar DIP — — — — — PNP 300мВт 500pcs 15В 60мА 100МГц 200 — — — — — — —
Chip K531LI3P
Chip K531LI3P
#10797
 22986 СНГ 51 шт
4 грн.
10+3,80 грн.
50+3,60 грн.
100+3,20 грн.
Three logical elements 3I. 1 DIP14 — — DIP — — — Logics — — — 100 pieces. — — — — — — — — — — —
Chip K561IR6
Chip K561IR6
#10796
 22985 СНГ 101 шт
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Eight-bit shift register. 2.5 DIP24 — — DIP — — — Logics — — — 120pcs — — — — — — — — — — —
Transistor KT818A
Transistor KT818A
#10793
 22982 СНГ 185 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — — — — — PNP 60Вт 100 pieces. 40В 10А 3МГц 15 — — — — — — —
Transistor KT818V
Transistor KT818V
#10791
 22980 СНГ 85 шт
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. 2.5 — TO220 Bipolar DIP — — — — — PNP 60Вт 100 pieces. 70В 10А 3МГц 15 — — — — — — —
Transistor MP112
Transistor MP112
#10785
 22973 СНГ 8 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 10В 100мА 2МГц 45 — — — — — — —
Transistor MP111A
Transistor MP111A
#10784
 22972 СНГ 28 шт
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Silicon alloyed npn amplifying low-frequency transistor with a normalized noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 20В 100мА 0,5МГц 30 — — — — — — —
Transistor KT805AM
Transistor KT805AM
#10782
 22970 СНГ 420 шт
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. 2.5 — TO220 Bipolar DIP — — — — — NPN 30Вт 100 pieces. 60В 5А 20МГц 15 — — — — — — —
Diode 2D202R (=KD202R)
Diode 2D202R (=KD202R)
#10770
 22840 СНГ 6249 шт
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
Diodes 2D202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode 2D202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V 5.2 — — — Screw КД-11 600V 5A — Rectifier — — 100 pieces. — — — — — — — — — — single
Chip KR1853VG1-03 (=SAA1293A-03)
Chip KR1853VG1-03 (=SAA1293A-03)
#10769
 22839 СНГ 3 шт
95 грн.
10+90,25 грн.
50+85,50 грн.
100+76 грн.
Eight-bit microprocessor control. 5.7 DIP40 — — DIP — — — TV — — — 20pcs — — — — — — — — — — —