Brand «СНГ»

Results: 4144

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Working voltage, V Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Working current, A Number of windings Polarization Winding resistance, Ohm Maximum switching voltage Winding supply current Plug or socket Number of contacts Mechanical installation Type Contact set Appointment Series Inductance Diode design
23487 СНГ 12 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistors KT629A silicon epitaxial-planar structures pnp switching unpackaged on a ceramic crystal holder with a protective coating with flexible leads. Designed for use in high-speed pulse devices as part of hybrid integrated circuits. 1.8 Bipolar SMD PNP 1Вт 100 pieces. 250МГц 25
23486 СНГ 94 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. 2.5 Bipolar DIP NPN 10Вт 100 pieces. 100В 500мА 5МГц 100
23485 СНГ 80 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Silicon transistors, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. 0.3 TO92 Bipolar DIP PNP 300мВт 1000pcs 50В 350мА 200МГц 120
23482 СНГ 1462 шт
3 грн.
10+2,85 грн.
50+2,70 грн.
100+2,40 грн.
Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.3 TO92 Bipolar DIP NPN 250мВт 500pcs 25В 25мА 300МГц 25
23472 СНГ 7 шт
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
KR5001GP1 microcircuits are an electronic two-tone bell and are designed to replace electromechanical bells in telephone sets and other devices that require the generation of signal sound signals. 0.5 DIP8 DIP Telephony 100 pieces.
23441 СНГ 2 шт
120 грн.
10+114 грн.
50+108 грн.
100+96 грн.
Optoelectronic semiconductor microcircuits 249KN1A, consisting of optocouplers and transistor interrupters controlled by them. 1.3 DIP Keys 20pcs
23440 СНГ 158 шт
2.50 грн.
High-frequency fixed inductance chokes of the DPM type are designed for operation in special-purpose equipment, household appliances, and also as part of noise suppression filters. 1.3 DIP 100 pieces. 2.4 1 Дроссель ДПМ 20uH
23438 СНГ 93 шт
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 25 DIP 20pcs Fork 22 To the body RP
23437 СНГ 494 шт
30 грн.
10+28,50 грн.
20+27 грн.
50+25,50 грн.
100+24 грн.
Connector RP10-22 low-frequency, rectangular, internal mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 22 DIP 50pcs Socket 22 To the body RP
23435 СНГ 222 шт
24 грн.
10+22,80 грн.
20+21,60 грн.
50+20,40 грн.
100+19,20 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 16 DIP 20pcs Fork 15 To the body RP
23434 СНГ 84 шт
24 грн.
10+22,80 грн.
20+21,60 грн.
50+20,40 грн.
100+19,20 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 16 DIP 50pcs Fork 15 To the body RP
23352 СНГ 166 шт
45 грн.
50+ 40,50 грн.
200+ 36 грн.
500+ 31,50 грн.
A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw 8kV 500mA High voltage 20pcs assembly
23350 СНГ 135 шт
60 грн.
Sheathed, two-position, single-stable, with four changeover contacts DC relay, designed for switching DC and AC electrical circuits with a frequency of 50 ... 1000 Hz. 34 60 DIP 10 pieces. 0.3 1 neutral 2700 500v Constant 4 switches
23349 СНГ 326 шт
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. 9.2 Bipolar DIP PNP 3Вт 50pcs 40В 1.5А 30МГц 120
23320 СНГ 8 шт
19 грн.
10+17,10 грн.
50+15,20 грн.
Silicon triac, planar, pnpn structures, triode, non-lockable, symmetrical. 11 Screw 200V 5A 40pcs
23319 СНГ 21 шт
35 грн.
10+33,25 грн.
50+31,50 грн.
100+28 грн.
Planar field-effect gallium arsenide transistor with two gates with an n-type channel and an amplifying Schottky barrier with a normalized noise figure at a frequency of 8 GHz. 0.1 КТ-21 Field SMD MOS n-channel 1мА 50мВт 120pcs 8ГГц
23318 СНГ 47 шт
70 грн.
10+63 грн.
50+59,50 грн.
100+56 грн.
The switch is biscuit, 3 provisions, 6 groups. 34 DIP 50pcs
23317 СНГ 68 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 DIP 20pcs Fork 15 To the body RP
23316 СНГ 26 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 DIP 20pcs Fork 15 To the body RP
23315 СНГ 5 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 DIP 20pcs Fork 15 To the body RP
23311 СНГ 87 шт
18 грн.
10+17,10 грн.
20+16,20 грн.
50+15,30 грн.
100+14,40 грн.
Connector RP10-15 low-frequency, rectangular, indoor mounting is designed to work in electrical circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 13 DIP 20pcs Socket 15 To the body RP
23308 СНГ 2147 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS650A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 150 V in the stabilization current range of 2.5...33 mA. The main technical parameters of the KS650A zener diode: • Rated stabilization voltage: 150 V at Ist 25 mA; • Stabilization voltage spread: 135... 165 V; • Temperature coefficient of stabilization voltage: ±0.2%/°С; • Zener diode differential resistance: 270 Ohm at Ist 25 mA; • The minimum allowable stabilization current: 2.5 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable power dissipation on the zener diode: 5 watts. 1.5 Screw 5Вт 100 pieces. 150V ks620
23301 СНГ 109 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 DIP 80pcs Fork 11 To the body RP
23300 СНГ 1 шт
22 грн.
10+20,90 грн.
20+19,80 грн.
50+18,70 грн.
100+17,60 грн.
Designed for operation in electric circuits of direct, alternating frequency up to 3 MHz and pulsed currents with voltage up to 1550 V. 9.2 DIP 80pcs Fork 11 To the body RP
23040 СНГ 14 шт
26 грн.
10+24,70 грн.
50+23,40 грн.
100+20,80 грн.
Transistor GT403I germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 Bipolar DIP PNP 4Вт 50pcs 60В 1,25А 30
23037 СНГ 24 шт
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403B germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 Bipolar DIP PNP 4Вт 100 pieces. 30В 1,25А 150
23036 СНГ 159 шт
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor GT403A germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 Bipolar DIP PNP 4Вт 100 pieces. 30В 1,25А 60
23031 СНГ 1521 шт
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor P416A germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 12В 25мА 60МГц 125
23030 СНГ 1293 шт
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
Transistor P416 germanium alloy pnp universal. Designed for use in amplifying and generator cascades in the range from long to short and ultrashort waves, as well as in pulse cascades of radio electronic devices. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 12В 25мА 40МГц 80
23026 СНГ 1044 шт
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
Transistor MP14 germanium alloyed pnp universal low-frequency low-power. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 20мА 1МГц 40