Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Accuracy | Plug or socket | Number of contacts | Mechanical installation | Type | Diode design |
|---|
Transistor MP14A
#10829
|
23025 | СНГ | 1909 шт |
7 грн.
|
|
Transistor MP14A germanium alloyed pnp universal low-frequency low-power. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 40 | — | — | — | — | — | — | — | ||||||||||
Transistor MP21D
#10821
|
23017 | СНГ | 2 шт |
10 грн.
|
|
Transistor MP21D germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 60В | 100мА | 0,7МГц | 200 | — | — | — | — | — | — | — | ||||||||||
Transistor MP13B
#10820
|
23016 | СНГ | 1206 шт |
9 грн.
|
|
Transistor MP13B germanium alloyed pnp universal low-frequency low-power. Designed to amplify small low-frequency signals, amplify, switch, pulse shaping. The main technical characteristics of the MP13B transistor: • Transistor structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 200 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 45...100; • Sk - Collector junction capacitance: no more than 60 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 60 | — | — | — | — | — | — | — | ||||||||||
Transistor MP10A
#10818
|
23013 | СНГ | 35 шт |
8 грн.
|
|
Transistor MP10A germanium alloyed npn amplifying low-frequency with non-normalized noise factors. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 30 | — | — | — | — | — | — | — | ||||||||||
Transistor MP20B
#10817
|
23012 | СНГ | 1 шт |
6 грн.
|
|
Transistor MP20B germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 50мА | 2МГц | 200 | — | — | — | — | — | — | — | ||||||||||
Transistor MP25B
#10816
|
23009 | СНГ | 182 шт |
6 грн.
|
|
Transistor MP25B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 40В | 150мА | — | 80 | — | — | — | — | — | — | — | ||||||||||
Transistor MP25A
#10815
|
23008 | СНГ | 2973 шт |
6 грн.
|
|
Transistor MP25A germanium alloy pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 40В | 150мА | — | 50 | — | — | — | — | — | — | — | ||||||||||
Transistor MP25
#10814
|
23007 | СНГ | 457 шт |
5 грн.
|
|
Transistor MP25 germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 40В | 150мА | — | 25 | — | — | — | — | — | — | — | ||||||||||
Transistor MP26B
#10813
|
23006 | СНГ | 35 шт |
6 грн.
|
|
Transistor MP26B germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 70В | 150мА | — | 80 | — | — | — | — | — | — | — | ||||||||||
Transistor MP26A
#10812
|
23005 | СНГ | 10089 шт |
5 грн.
|
|
Transistor MP26A germanium alloyed pnp universal low-frequency. Designed to amplify and switch low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 200мВт | 100 pieces. | 70В | 150мА | — | 50 | — | — | — | — | — | — | — | ||||||||||
Transistor MP14B
#10811
|
23001 | СНГ | 258 шт |
7 грн.
|
|
Transistor MP14B germanium alloyed pnp universal low-frequency low-power. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 150мВт | 100 pieces. | 30В | 20мА | 1МГц | 60 | — | — | — | — | — | — | — | ||||||||||
Transistor KT350A
#10810
|
23000 | СНГ | 10 шт |
5 грн.
|
|
Transistor KT350A silicon epitaxial-planar structure pnp universal. Designed for use in high frequency amplifiers and switching devices. | 0.3 | — | — | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 500pcs | 15В | 60мА | 100МГц | 200 | — | — | — | — | — | — | — | ||||||||||
Chip K531LI3P
#10797
|
22986 | СНГ | 51 шт |
4 грн.
|
|
Three logical elements 3I. | 1 | — | DIP14 | — | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Chip K561IR6
#10796
|
22985 | СНГ | 102 шт |
12 грн.
|
|
Eight-bit shift register. | 2.5 | — | DIP24 | — | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 120pcs | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT818A
#10793
|
22982 | СНГ | 185 шт |
14 грн.
|
|
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 60Вт | 100 pieces. | 40В | 10А | 3МГц | 15 | — | — | — | — | — | — | — | ||||||||||
Transistor KT818V
#10791
|
22980 | СНГ | 85 шт |
18 грн.
|
|
Transistor silicon mesaepitaxial-planar structure pnp switching. Designed for use in amplifiers and switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 60Вт | 100 pieces. | 70В | 10А | 3МГц | 15 | — | — | — | — | — | — | — | ||||||||||
Transistor MP112
#10785
|
22973 | СНГ | 8 шт |
5 грн.
|
|
Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 10В | 100мА | 2МГц | 45 | — | — | — | — | — | — | — | ||||||||||
Transistor MP111A
#10784
|
22972 | СНГ | 28 шт |
5 грн.
|
|
Silicon alloyed npn amplifying low-frequency transistor with a normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 20В | 100мА | 0,5МГц | 30 | — | — | — | — | — | — | — | ||||||||||
Transistor KT805AM
#10782
|
22970 | СНГ | 435 шт |
20 грн.
|
|
Transistors silicon epitaxial structures npn switching. Designed for use in line-scan output stages, ignition devices for internal combustion engines and other switching devices. | 2.5 | — | — | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 30Вт | 100 pieces. | 60В | 5А | 20МГц | 15 | — | — | — | — | — | — | — | ||||||||||
Diode 2D202R (=KD202R)
#10770
|
22840 | СНГ | 6249 шт |
10 грн.
|
|
Diodes 2D202R silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. Are issued in the glass-to-metal case with rigid conclusions. The type of the diode and the connection diagram of the electrodes with the leads are given on the case. Diode weight no more than 5.2 g, with accessories no more than 7 g. Hull type: KDYu-11-2. Specifications: UZh3.362.035 TU. The main technical characteristics of the diode 2D202R: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 μA at Uobr 600 V | 5.2 | — | — | — | — | — | Screw | КД-11 | 600V | 5A | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
| 22839 | СНГ | 3 шт |
95 грн.
|
|
Eight-bit microprocessor control. | 5.7 | — | DIP40 | — | — | — | DIP | — | — | — | TV | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
В7Р-52 Block fork
#10766
|
22836 | СНГ | 452 шт |
790 грн.
|
|
Current per contact - 10 A. The maximum operating voltage is 500 V. Type of contact plating - silver | 200 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 60pcs | — | — | — | — | — | — | Fork | 52 | To the body | AT 7 | — | ||||||||||
Transistor KP707V2 (=BUZ90)
#10738
|
22803 | СНГ | 2 шт |
52 грн.
|
|
2.5 | — | — | — | TO220 | Field | DIP | — | — | — | — | — | MOS n-channel | 800В | 7А | 50Вт | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Thyristor KU228B
#10730
|
22795 | СНГ | 41 шт |
12 грн.
|
Silicon thyristors KU228B, diffusion-alloy, triode, non-lockable. Designed for use as switching elements. Hull type: KT-28 (TO-220). Specifications: aA0.336.644 TU. The main technical parameters of the thyristor KU228B: • Repetitive impulse voltage: 100 V; • Repetitive impulse voltage in the closed state: 100 V; • Maximum repetitive pulse current in the open state: 30 A; • Average pulse current in the open state: 10 A; • Repetitive pulse current in the closed state: no more than 2 mA; • Voltage slew rate in closed state: 20 V/µs; • Turn-on time: no more than 2 microseconds; • Turn-off time: no more than 40 µs | 2.5 | — | — | — | — | — | DIP | TO-220 | 100V | 10A | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
| 22794 | СНГ | 90 шт |
50 грн.
|
|
Buttons K2-2 are intended for switching electric circuits of direct and alternating current in radio-electronic equipment. Operating voltage: 250V Maximum current: 4A Without fixation. | 13 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Diode 2D204A (=KD204A)
#10728
|
25434 | СНГ | 6 шт |
15 грн.
|
|
Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the diode 2D204A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 400 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - DC reverse current: no more than 150 µA at Uobr 400 V; • tvoc - Reverse recovery time: 1.5 µs | 5 | — | — | — | — | — | Screw | КД-11 | 400V | 400mA | — | Rectifier | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | single | ||||||||||
Transistor KT3115A-2
#10726
|
22783 | СНГ | 775 шт |
30 грн.
|
|
Designed for use in the input and subsequent stages of low-noise microwave amplifiers. | 0.1 | — | — | — | КТ-22 | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 75мВт | 200pcs | — | 8,5мА | 5ГГц | 110 | — | — | — | — | — | — | — | ||||||||||
| 22782 | СНГ | 7 шт |
200 грн.
|
Designed to work as built-in elements of internal mounting of equipment (in the casing of a complete product) in DC and pulsating current circuits. | 800 | hard conclusions | — | 3000 | — | — | DIP | — | — | — | — | — | — | — | — | — | 2 pcs. | — | — | — | — | 2µF | 10 % | — | — | — | — | — | ||||||||||||
PLC7-D38, lamp panel
#10723
|
22780 | СНГ | 322 шт |
20 грн.
|
|
Panel PLC7-D38 - with clamping spring 38 mm. It is intended for installation of electrovacuum devices in the radio-electronic equipment. D - for non-shielding lamp holder. | 9.2 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | Socket | 7 | To the body | PL | — | ||||||||||
PLK7-D31, lamp panel
#10722
|
22779 | СНГ | 237 шт |
20 грн.
|
|
Panel PLC7-D31 - with clamping spring 31 mm. It is intended for installation of electrovacuum devices in the radio-electronic equipment. D - for non-shielding lamp holder. | 9.2 | — | — | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | Socket | 7 | To the body | PL | — |
