Diodes domestic

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Power Factory packaging Diode design
Microwave diode 2A101A
Microwave diode 2A101A
#9896
 21692 СНГ —
28 грн.
50+25,20 грн.
200+22,40 грн.
500+19,60 грн.
 — The main technical parameters of the microwave diode 2A101B: • Conversion loss: no more than 10 dB; • Rectified current: not less than 0.5 mA; • Input noise ratio: no more than 2; • Voltage standing wave ratio: no more than 3; • Output resistance: 150...300 Ohm; • Pulse power dissipation: 250 mW; • Pulse dissipated power at short-term exposure (no more than 20 minutes): 300 mW; • Power of the flat part of the pulse leaking through the arrester: 60 mW; • Single pulse energy: 0.2 erg; • Ambient temperature: -60...+100°С; 1.5 DIP — — — — Microwave — 100 pieces. single
Microwave diode 3A117AR-6
Microwave diode 3A117AR-6
#10374
 22381 СНГ —
54 грн.
50+48,60 грн.
200+43,20 грн.
500+37,80 грн.
 — • Operating frequency: 0.75...10 GHz; • Conversion loss: no more than 5.8 dB; • Rectified current: 1.2...3 mA; • Normalized noise figure: 5.2...6 dB; • Voltage standing wave ratio: no more than 1.05...2; • Output resistance: 220...480 Ohm; • Continuous power dissipation: 25mW • Pulse power dissipation: 100 mW; • Burnout energy: 10 erg; • Ambient temperature: -60...+125°С; 0.03 SMD — — — — Microwave — 100 pieces. single
Microwave diode 3A539A
Microwave diode 3A539A
#10412
 22424 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
 — Diode 3A539A arsenidogallium, epitaxial, with a Schottky barrier, microwave, pulsed. It is intended for application in pulse devices of nanosecond range. Available in a plastic case with flexible leads. 0.2 DIP — — — — Microwave — 24pcs single
Diode DCH251-160x-7
Diode DCH251-160x-7
#10727
 22784 СНГ —
130 грн.
50+117 грн.
200+104 грн.
500+91 грн.
 — Fast recovery silicon diffusion diode. 110 Cooler — 700V 160А — Rectifier — 6pcs single
Diode KD927A
Diode KD927A
#11217
 23351 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
 — Diode KD927A silicon, impulse. Designed for use in pulse devices 0.1 DIP КД-2 35V 10mA — Pulse — 4 things. single
Rectifier pole KTS201D
Rectifier pole KTS201D
#11219
 23353 СНГ —
81 грн.
50+72,90 грн.
200+64,80 грн.
500+56,70 грн.
 — A column of silicon, diffusion, avalanche diodes, pulsed. Designed to convert alternating pulsed voltage with a frequency of up to 1 kHz. 63 Screw — 10kV 500mA — High voltage — 20pcs assembly
Microwave diode AA112B
Microwave diode AA112B
#11584
 23815 СНГ —
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
 — Designed for use in frequency converters in the centimeter wavelength range as part of hybrid integrated circuits and microassemblies. 0.03 DIP КД-1 — — — Microwave 150мВт 50pcs single
Power diode D161-200-12
Power diode D161-200-12
#11684
 23913 СНГ —
160 грн.
50+144 грн.
200+128 грн.
500+112 грн.
 — D161-200-12 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. They are produced in a ceramic-metal housing with a flexible lead, direct and reverse (with X sign) polarity. For diodes of direct polarity, the anode is the base of the case, reverse polarity is a flexible lead. Average direct current - 200 A Repetitive impulse reverse voltage - 1200 V Cooling air natural or forced. 270 DIP — 1200V 200А — Rectifier — 1 PC. single
Diode column D1005A
Diode column D1005A
#11690
 23919 СНГ —
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
 — Pillar of silicon, alloy diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 1 kHz. 34 Screw — 4kV 50mA — High voltage — 24pcs single
Diode D226
Diode D226
#11880
 24133 СНГ —
6 грн.
50+5,40 грн.
200+4,80 грн.
500+4,20 грн.
 — The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. 2 DIP — 400V 300mA — Rectifier — 200pcs single
Diode D104A
Diode D104A
#11881
 24134 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V. 0.5 DIP D104 100V 30mA — Pulse — 100 pieces. single
Diode KD522B
Diode KD522B
#11882
 24135 СНГ —
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
 — The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. 0.2 DIP КД-2 50V 100mA — Pulse — 500pcs single
Diode D303
Diode D303
#11884
 24137 СНГ —
10 грн.
50+9 грн.
200+8 грн.
500+7 грн.
 — Diode germanium alloy. 10.5 Screw — 150V 3.0A — Rectifier — 30pcs single
Diode D103A
Diode D103A
#11888
 24141 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.4 DIP D104 30V 30mA — High frequency — 200pcs single
Diode D106
Diode D106
#11981
 24270 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Microalloy, silicon, universal. Designed for use in AGC systems, discriminators, video amplifiers. 0.3 DIP D104 30V 30mA — Rectifier — 100 pieces. single
Diode KD503B
Diode KD503B
#11986
 24275 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
 — Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. 0.25 DIP КД-121 30V 20mA — Pulse — 100 pieces. single
Diode D214
Diode D214
#12160
 24452 СНГ —
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
 — Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 100V 10A — Rectifier — 40pcs single
Diode D232A
Diode D232A
#12223
 24602 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 11 Screw КДЮ-11 400V 10A — Rectifier — 40pcs single
Diode 2D202D (=KD202D)
Diode 2D202D (=KD202D)
#12226
 24605 СНГ —
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
 — The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. 5 Screw КДЮ-11 200V 5A — Rectifier — 100 pieces. single
Microwave diode D605
Microwave diode D605
#12776
 25133 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
 — Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm. 2.5 DIP — — — — Microwave — 10 pieces. single
Microwave diode D408
Microwave diode D408
#12777
 25134 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s. 2.5 DIP — — — — Microwave — 10 pieces. single
Microwave diode 2A511A
Microwave diode 2A511A
#12778
 25135 СНГ —
90 грн.
50+81 грн.
200+72 грн.
500+63 грн.
 — The main technical parameters of the microwave diode 2A511A: • Total capacitance: 0.55...0.75 pF; • Forward loss resistance: no more than 2 ohms; • Accumulated diode charge: no more than 350 nC; • Constant reverse voltage: 50...200 V; • Constant forward current: 700 mA; • Value of admissible static potential: 100 V. 0.3 DIP — — — — Microwave — 20pcs single
Microwave diode DK-V2
Microwave diode DK-V2
#12779
 25136 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Microwave diodes DK-V2 silicon, point, detector. Designed to detect signals at a wavelength of 10 cm. 0.5 DIP — — — — Microwave — 40pcs single
Diode 1D507A (=GD507A)
Diode 1D507A (=GD507A)
#12780
 25137 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diodes 1D507A germanium, microalloy, pulsed. Designed to limit and modulate pulse signals. The main technical characteristics of the diode 1D507A: • Uopp max - Maximum direct reverse voltage: 20 V; • Inp max - Maximum forward current: 16 mA; • Unp - DC forward voltage: no more than 0.5 V at Inp 5 mA; • Iobr - DC reverse current: no more than 50 µA at Uobr 20 V; • tvoc arr - Reverse recovery time: 0.1 µs; • Sd - Total capacitance: 0.8 pF. 0.25 DIP КД-121 20V 16mA 200mA Pulse — 100 pieces. single
Diode D311
Diode D311
#12781
 25138 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 40mA — Pulse — 100 pieces. single
Diode D243A
Diode D243A
#13780
 25959 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diodes D243A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D243A: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 200 V. 13 Screw — 200V 10A — Rectifier — 50pcs single
Diode column KTS114B
Diode column KTS114B
#13811
 25989 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
 — Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. 1.6 DIP — 6kV 50mA — High voltage — 100 pieces. single
Diode KD411GM
Diode KD411GM
#13926
 26105 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Silicon diode, diffusion, high-speed. 2 DIP КД-8 500V 2A — Fast — 200pcs single
Diode KD203D
Diode KD203D
#13931
 26110 СНГ —
40 грн.
50+36 грн.
200+32 грн.
500+28 грн.
 — Diodes KD203D silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode 2D203D: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. 13 Screw — 700V 10A — Rectifier — 25pcs single
Diode D245A
Diode D245A
#13934
 26113 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — Diodes D245A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the D245A diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 300 V. 13 Screw — 300V 10A — Rectifier — 40pcs single