Diodes domestic

Results: 182

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
26450 СНГ 2 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
Diode KD206A silicon, mesa-diffusion, avalanche, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. The main technical characteristics of the KD206A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 400 V; • tvoc - Reverse recovery time: 10 µs. 5.7 Screw КД-11 400V 10A Rectifier 100 pieces. single
22792 СНГ 1 шт
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
Pillars of silicon, diffusion diodes, rectifiers. Designed to convert alternating voltage with a frequency of up to 20 kHz. Are issued in the plastic case with flexible conclusions. 1.6 DIP 4kV 10mA High voltage 100 pieces. single
22790 СНГ 1 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use in pulse devices. 0.3 DIP D104 100V 50mA Pulse 100 pieces. single
26464 СНГ 1 шт
50 грн.
50+45 грн.
200+40 грн.
500+35 грн.
Q10-10 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. Are issued in the glass-to-metal case with a flexible conclusion. Average direct current - 10 A. Repetitive impulse reverse voltage - 1000 V. Cooling air natural. 45 Screw 1000V 10A Rectifier 1 PC. single
28147 СНГ 1 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
D214A silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 100V 10A Rectifier 40pcs single
28394 СНГ 1 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes silicon D103, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.4 DIP D104 30V 30mA High frequency 200pcs single
28433 СНГ 1 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
The main technical characteristics of the diode 2D201B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 15 A; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 1 kHz. 13 Screw КДЮ-11 100V 10A 15A Rectifier 40pcs single
28449 СНГ 1 шт
60 грн.
50+54 грн.
200+48 грн.
500+42 грн.
6 Cooler 1000V 16A Avalanche
28423 СНГ 1 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
The main technical characteristics of the diode D226G: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 200 V. 2 DIP КД-8 200V 300mA Rectifier 200pcs single
29357 СНГ 1 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
500+4,90 грн.
KD202B silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 5 kHz. Available in a glass-metal case with rigid leads. The diode type and the connection diagram of the electrodes with the leads are shown on the case. Main technical characteristics of the KD202B diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • inp max - Maximum forward current: 5 A; • fd - Diode operating frequency: 1.2 kHz; • unp - Constant forward voltage: no more than 0.9 V at inp 5 A; • iobrp - Constant reverse current: no more than 800 µA at uobr 100 V 5.2 Screw КД-11 50V 5A Rectifier 100 pieces. single
28429 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Max. allowable reverse voltage, V: 100 Maximum direct forward current, mA: 300 Maximum operating frequency, kHz: 1 Recovery time, ms: 0.385 0.4 DIP 100V 300mA Rectifier 200pcs single
22958 СНГ
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
• Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 50 μA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 45 pF at Uobr 100 V 1.5 КД-16 200V 1A Rectifier 200pcs single
70000 СНГ
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
Pillar of silicon, diffusion diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. 1.5 DIP 10kV 10mA High voltage 100 pieces. single
22962 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode germanium alloy. 2 DIP КД-8 100V 300mA Rectifier 200pcs single
22646 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
• Uopp max - Maximum direct reverse voltage: 1000 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 1000 V 1 DIP КД-9 1000V 100mA Rectifier 100 pieces. single
22647 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
• Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 600 V 1 DIP КД-9 600V 100mA Rectifier 100 pieces. single
22963 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Silicon diode, diffusion. 1 DIP КД-8 200V 300mA Rectifier 200pcs single
22964 СНГ
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
Silicon diode, diffusion. The main technical characteristics of the diode D237B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. 2 DIP КД-8 400V 300mA Rectifier 100 pieces. single
22965 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Silicon diode, diffusion. 2 DIP КД-8 600V 300mA Rectifier 200pcs single
28418 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diode D18 germanium, point, pulse. 0.4 DIP D104 20V 16mA Pulse 200pcs single
28419 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diode D20 germanium, point, pulse. 0.3 DIP D104 10V 20mA Pulse 200pcs single
22789 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Microalloy, universal. Designed for use in AGC systems, discriminators, video amplifiers. 0.3 DIP D104 75V 30mA Rectifier 100 pieces. single
27716 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Silicon diode, alloyed, pulsed. 0.3 DIP D104 70V 50mA 500mA Pulse 200pcs single
22791 СНГ
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
Diode germanium, diffusion, pulse. 0.3 DIP D104 20V 500mA 800mA Pulse 100 pieces. single
22788 СНГ
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 80mA Pulse 100 pieces. single
70035 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave 20pcs single
24230 СНГ
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave single
22968 СНГ
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С 3 DIP Microwave 50pcs single
70038 СНГ
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP Microwave 20pcs single
21410 СНГ
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD 50V 20mA Pulse 100 pieces. assembly