Diodes domestic

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Diode type Factory packaging Diode design
Diode D312
Diode D312
#8895
 22790 СНГ 1 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Designed for use in pulse devices. 0.3 DIP D104 100V 50mA — Pulse 100 pieces. single
Power diode V10-10
Power diode V10-10
#14265
 26464 СНГ 1 шт
50 грн.
50+45 грн.
200+40 грн.
500+35 грн.
Q10-10 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. Are issued in the glass-to-metal case with a flexible conclusion. Average direct current - 10 A. Repetitive impulse reverse voltage - 1000 V. Cooling air natural. 45 Screw — 1000V 10A — Rectifier 1 PC. single
Diode D214A
Diode D214A
#15913
 28147 СНГ 1 шт
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
D214A silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 Screw КДЮ-11 100V 10A — Rectifier 40pcs single
Diode D103
Diode D103
#16151
 28394 СНГ 1 шт
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
Diodes silicon D103, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. 0.4 DIP D104 30V 30mA — High frequency 200pcs single
Diode 2D201B (=KD201B)
Diode 2D201B (=KD201B)
#16188
 28433 СНГ 1 шт
30 грн.
50+27 грн.
200+24 грн.
500+21 грн.
The main technical characteristics of the diode 2D201B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 15 A; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 1 kHz. 13 Screw КДЮ-11 100V 10A 15A Rectifier 40pcs single
Avalanche diode DL112-16-10
Avalanche diode DL112-16-10
#16203
 28449 СНГ 1 шт
60 грн.
50+54 грн.
200+48 грн.
500+42 грн.
6 Cooler — 1000V 16A — Avalanche — —
Diode D226G
Diode D226G
#16207
 28423 СНГ 1 шт
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
The main technical characteristics of the diode D226G: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 200 V. 2 DIP КД-8 200V 300mA — Rectifier 200pcs single
Diode KD202B
Diode KD202B
#17108
 29357 СНГ 1 шт
7 грн.
50+6,30 грн.
200+5,60 грн.
500+4,90 грн.
KD202B silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 5 kHz. Available in a glass-metal case with rigid leads. The diode type and the connection diagram of the electrodes with the leads are shown on the case. Main technical characteristics of the KD202B diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • inp max - Maximum forward current: 5 A; • fd - Diode operating frequency: 1.2 kHz; • unp - Constant forward voltage: no more than 0.9 V at inp 5 A; • iobrp - Constant reverse current: no more than 800 µA at uobr 100 V 5.2 Screw КД-11 50V 5A — Rectifier 100 pieces. single
Diode KD106A
Diode KD106A
#3410
 28429 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
 — Max. allowable reverse voltage, V: 100 Maximum direct forward current, mA: 300 Maximum operating frequency, kHz: 1 Recovery time, ms: 0.385 0.4 DIP — 100V 300mA — Rectifier 200pcs single
Diode 2D212A (=KD212A)
Diode 2D212A (=KD212A)
#3411
 22958 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
 — • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 50 μA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 45 pF at Uobr 100 V 1.5 — КД-16 200V 1A — Rectifier 200pcs single
Diode KTs106G
Diode KTs106G
#8866
 70000 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
 — Pillar of silicon, diffusion diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. 1.5 DIP — 10kV 10mA — High voltage 100 pieces. single
Diode column 2Ts106A (=KTs106A)
Diode column 2Ts106A (=KTs106A)
#8867
 22792 СНГ —
15 грн.
50+13,50 грн.
200+12 грн.
500+10,50 грн.
 — Pillars of silicon, diffusion diodes, rectifiers. Designed to convert alternating voltage with a frequency of up to 20 kHz. Are issued in the plastic case with flexible conclusions. 1.6 DIP — 4kV 10mA — High voltage 100 pieces. single
Diode D7B
Diode D7B
#8872
 22962 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
 — Diode germanium alloy. 2 DIP КД-8 100V 300mA — Rectifier 200pcs single
Diode MD218
Diode MD218
#8875
 22646 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
 — • Uopp max - Maximum direct reverse voltage: 1000 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 1000 V 1 DIP КД-9 1000V 100mA — Rectifier 100 pieces. single
Diode D211
Diode D211
#8877
 22647 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
 — • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 600 V 1 DIP КД-9 600V 100mA — Rectifier 100 pieces. single
Diode D237A
Diode D237A
#8880
 22963 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Silicon diode, diffusion. 1 DIP КД-8 200V 300mA — Rectifier 200pcs single
Diode D237B
Diode D237B
#8881
 22964 СНГ —
4 грн.
50+3,60 грн.
200+3,20 грн.
500+2,80 грн.
 — Silicon diode, diffusion. The main technical characteristics of the diode D237B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. 2 DIP КД-8 400V 300mA — Rectifier 100 pieces. single
Diode D237V
Diode D237V
#8882
 22965 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Silicon diode, diffusion. 2 DIP КД-8 600V 300mA — Rectifier 200pcs single
Diode D18
Diode D18
#8884
 28418 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diode D18 germanium, point, pulse. 0.4 DIP D104 20V 16mA — Pulse 200pcs single
Diode D20
Diode D20
#8886
 28419 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Diode D20 germanium, point, pulse. 0.3 DIP D104 10V 20mA — Pulse 200pcs single
Diode D105
Diode D105
#8888
 22789 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Microalloy, universal. Designed for use in AGC systems, discriminators, video amplifiers. 0.3 DIP D104 75V 30mA — Rectifier 100 pieces. single
Diode D219A
Diode D219A
#8889
 27716 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
 — Silicon diode, alloyed, pulsed. 0.3 DIP D104 70V 50mA 500mA Pulse 200pcs single
Diode D310
Diode D310
#8893
 22791 СНГ —
2 грн.
50+1,80 грн.
200+1,60 грн.
500+1,40 грн.
 — Diode germanium, diffusion, pulse. 0.3 DIP D104 20V 500mA 800mA Pulse 100 pieces. single
Diode D311A
Diode D311A
#8894
 22788 СНГ —
3 грн.
50+2,70 грн.
200+2,40 грн.
500+2,10 грн.
 — Germanium, mesadiffusion, pulsed. 0.3 DIP D104 30V 80mA — Pulse 100 pieces. single
Diode D405A
Diode D405A
#8896
 70035 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
 — Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — — Microwave 20pcs single
Microwave diode D405B
Microwave diode D405B
#8897
 24230 СНГ —
22 грн.
50+19,80 грн.
200+17,60 грн.
500+15,40 грн.
 — Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — — Microwave — single
Diode D405AP
Diode D405AP
#8898
 22968 СНГ —
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
 — The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С 3 DIP — — — — Microwave 50pcs single
Diode D405BP
Diode D405BP
#8899
 70038 СНГ —
12 грн.
50+10,80 грн.
200+9,60 грн.
500+8,40 грн.
 — Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. 2.5 DIP — — — — Microwave 20pcs single
Diode Assembly KDS523V
Diode Assembly KDS523V
#9819
 21410 СНГ —
5 грн.
50+4,50 грн.
200+4 грн.
500+3,50 грн.
 — Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. 0.25 SMD — 50V 20mA — Pulse 100 pieces. assembly
Diode KD105B (type 1)
Diode KD105B (type 1)
#9888
 21673 СНГ —
1 грн.
50+0,90 грн.
200+0,80 грн.
500+0,70 грн.
 — Silicon diodes, diffusion. Are issued in the plastic case with flexible conclusions. 0.3 DIP — 400V 300mA — Rectifier 1000pcs single