Diodes domestic
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Factory packaging | Diode design |
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Diode KD206A
#14251
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26450 | СНГ | 2 шт |
25 грн.
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Diode KD206A silicon, mesa-diffusion, avalanche, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. The main technical characteristics of the KD206A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 400 V; • tvoc - Reverse recovery time: 10 µs. | 5.7 | Screw | КД-11 | 400V | 10A | — | Rectifier | 100 pieces. | single | ||||||||
| 22792 | СНГ | 1 шт |
15 грн.
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Pillars of silicon, diffusion diodes, rectifiers. Designed to convert alternating voltage with a frequency of up to 20 kHz. Are issued in the plastic case with flexible conclusions. | 1.6 | DIP | — | 4kV | 10mA | — | High voltage | 100 pieces. | single | |||||||||
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Diode D312
#8895
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22790 | СНГ | 1 шт |
3 грн.
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Designed for use in pulse devices. | 0.3 | DIP | D104 | 100V | 50mA | — | Pulse | 100 pieces. | single | ||||||||
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Power diode V10-10
#14265
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26464 | СНГ | 1 шт |
50 грн.
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Q10-10 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. Are issued in the glass-to-metal case with a flexible conclusion. Average direct current - 10 A. Repetitive impulse reverse voltage - 1000 V. Cooling air natural. | 45 | Screw | — | 1000V | 10A | — | Rectifier | 1 PC. | single | ||||||||
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Diode D214A
#15913
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28147 | СНГ | 1 шт |
25 грн.
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D214A silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 100V | 10A | — | Rectifier | 40pcs | single | ||||||||
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Diode D103
#16151
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28394 | СНГ | 1 шт |
3 грн.
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Diodes silicon D103, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | DIP | D104 | 30V | 30mA | — | High frequency | 200pcs | single | ||||||||
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Diode 2D201B (=KD201B)
#16188
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28433 | СНГ | 1 шт |
30 грн.
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The main technical characteristics of the diode 2D201B: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • Inp and max - Maximum pulse forward current: 15 A; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • fmax - Maximum operating frequency of the diode: 1 kHz. | 13 | Screw | КДЮ-11 | 100V | 10A | 15A | Rectifier | 40pcs | single | ||||||||
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Avalanche diode DL112-16-10
#16203
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28449 | СНГ | 1 шт |
60 грн.
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6 | Cooler | — | 1000V | 16A | — | Avalanche | — | — | |||||||||
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Diode D226G
#16207
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28423 | СНГ | 1 шт |
4 грн.
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The main technical characteristics of the diode D226G: • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 200 V. | 2 | DIP | КД-8 | 200V | 300mA | — | Rectifier | 200pcs | single | ||||||||
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Diode KD202B
#17108
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29357 | СНГ | 1 шт |
7 грн.
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KD202B silicon diffusion diodes. Designed to convert alternating voltage with a frequency of up to 5 kHz. Available in a glass-metal case with rigid leads. The diode type and the connection diagram of the electrodes with the leads are shown on the case. Main technical characteristics of the KD202B diode: • uobr and max - Maximum pulse reverse voltage: 50 V; • inp max - Maximum forward current: 5 A; • fd - Diode operating frequency: 1.2 kHz; • unp - Constant forward voltage: no more than 0.9 V at inp 5 A; • iobrp - Constant reverse current: no more than 800 µA at uobr 100 V | 5.2 | Screw | КД-11 | 50V | 5A | — | Rectifier | 100 pieces. | single | ||||||||
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Diode KD106A
#3410
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28429 | СНГ | — |
5 грн.
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— | Max. allowable reverse voltage, V: 100 Maximum direct forward current, mA: 300 Maximum operating frequency, kHz: 1 Recovery time, ms: 0.385 | 0.4 | DIP | — | 100V | 300mA | — | Rectifier | 200pcs | single | |||||||
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Diode 2D212A (=KD212A)
#3411
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22958 | СНГ | — |
15 грн.
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— | • Uopp max - Maximum direct reverse voltage: 200 V; • Inp max - Maximum forward current: 1 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 A; • Iobr - Constant reverse current: no more than 50 μA at Uobr 200 V; • tvoc arr - Reverse recovery time: 0.3 µs; • Sd - Total capacitance: 45 pF at Uobr 100 V | 1.5 | — | КД-16 | 200V | 1A | — | Rectifier | 200pcs | single | |||||||
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Diode KTs106G
#8866
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70000 | СНГ | — |
15 грн.
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— | Pillar of silicon, diffusion diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. | 1.5 | DIP | — | 10kV | 10mA | — | High voltage | 100 pieces. | single | |||||||
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Diode D7B
#8872
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22962 | СНГ | — |
2 грн.
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— | Diode germanium alloy. | 2 | DIP | КД-8 | 100V | 300mA | — | Rectifier | 200pcs | single | |||||||
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Diode MD218
#8875
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22646 | СНГ | — |
5 грн.
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— | • Uopp max - Maximum direct reverse voltage: 1000 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 1000 V | 1 | DIP | КД-9 | 1000V | 100mA | — | Rectifier | 100 pieces. | single | |||||||
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Diode D211
#8877
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22647 | СНГ | — |
5 грн.
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— | • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 600 V | 1 | DIP | КД-9 | 600V | 100mA | — | Rectifier | 100 pieces. | single | |||||||
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Diode D237A
#8880
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22963 | СНГ | — |
3 грн.
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— | Silicon diode, diffusion. | 1 | DIP | КД-8 | 200V | 300mA | — | Rectifier | 200pcs | single | |||||||
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Diode D237B
#8881
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22964 | СНГ | — |
4 грн.
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— | Silicon diode, diffusion. The main technical characteristics of the diode D237B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. | 2 | DIP | КД-8 | 400V | 300mA | — | Rectifier | 100 pieces. | single | |||||||
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Diode D237V
#8882
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22965 | СНГ | — |
3 грн.
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— | Silicon diode, diffusion. | 2 | DIP | КД-8 | 600V | 300mA | — | Rectifier | 200pcs | single | |||||||
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Diode D18
#8884
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28418 | СНГ | — |
3 грн.
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— | Diode D18 germanium, point, pulse. | 0.4 | DIP | D104 | 20V | 16mA | — | Pulse | 200pcs | single | |||||||
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Diode D20
#8886
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28419 | СНГ | — |
3 грн.
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— | Diode D20 germanium, point, pulse. | 0.3 | DIP | D104 | 10V | 20mA | — | Pulse | 200pcs | single | |||||||
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Diode D105
#8888
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22789 | СНГ | — |
3 грн.
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— | Microalloy, universal. Designed for use in AGC systems, discriminators, video amplifiers. | 0.3 | DIP | D104 | 75V | 30mA | — | Rectifier | 100 pieces. | single | |||||||
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Diode D219A
#8889
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27716 | СНГ | — |
2 грн.
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— | Silicon diode, alloyed, pulsed. | 0.3 | DIP | D104 | 70V | 50mA | 500mA | Pulse | 200pcs | single | |||||||
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Diode D310
#8893
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22791 | СНГ | — |
2 грн.
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— | Diode germanium, diffusion, pulse. | 0.3 | DIP | D104 | 20V | 500mA | 800mA | Pulse | 100 pieces. | single | |||||||
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Diode D311A
#8894
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22788 | СНГ | — |
3 грн.
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— | Germanium, mesadiffusion, pulsed. | 0.3 | DIP | D104 | 30V | 80mA | — | Pulse | 100 pieces. | single | |||||||
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Diode D405A
#8896
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70035 | СНГ | — |
12 грн.
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— | Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | — | Microwave | 20pcs | single | |||||||
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Microwave diode D405B
#8897
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24230 | СНГ | — |
22 грн.
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— | Diode D405B silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | — | Microwave | — | single | |||||||
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Diode D405AP
#8898
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22968 | СНГ | — |
25 грн.
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— | The main technical parameters of the microwave diode D405AP: • Conversion loss: no more than 8.5 dB; • Rectified current: not less than 1 mA; • Rated noise figure: 8.5 dB; • Output noise ratio: no more than 2; • Voltage standing wave ratio: no more than 1.7; • Output impedance: 300...500 Ohm; • Continuous dissipated microwave power: 20 mW; • Pulse power dissipation: 300 mW; • Ambient temperature: -60...+100 °С | 3 | DIP | — | — | — | — | Microwave | 50pcs | single | |||||||
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Diode D405BP
#8899
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70038 | СНГ | — |
12 грн.
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— | Diode D405A silicon point mixing. Designed for use in frequency converters at a wavelength of 3 cm. | 2.5 | DIP | — | — | — | — | Microwave | 20pcs | single | |||||||
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Diode Assembly KDS523V
#9819
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21410 | СНГ | — |
5 грн.
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— | Diode assembly, each consisting of four silicon planar epitaxial switching diodes with separate terminals. Are issued in the plastic case with flexible conclusions. | 0.25 | SMD | — | 50V | 20mA | — | Pulse | 100 pieces. | assembly |