Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 20173 | VISHAY | 138 шт |
7 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 16V | — | |||||||||||
Chip KR505RE3 0009
#14439
|
26651 | СНГ | 138 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | SO24 | — | — | SMD | — | — | — | Memory | — | — | — | 140pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 5V6
#4193
|
20211 | Rectron Semiconductor | 137 шт |
1 грн.
|
|
Zener diode 5.6V 0.5W (BZX55C 5V6) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 5V6 | DO-35 | — | — | ||||||||||
| 20169 | VISHAY | 137 шт |
7 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 56V | — | |||||||||||
Chip K561IE19
#922
|
21915 | СНГ | 136 шт |
6 грн.
|
|
Five-digit Johnson counter with preset. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K176PU2
#833
|
21324 | СНГ | 135 шт |
12 грн.
|
|
Six logic level converters from CMOS to TTL. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Optocoupler AOD101B
#3431
|
24239 | — | 135 шт |
8 грн.
|
|
Number of channels 1 Constant direct input voltage Uin., V 1.5 at input current Iin., mA 20 Maximum input current Iin.max., mA 20 Maximum pulse input current Iin.imp.max., mA 100 Maximum input reverse voltage Uin.reverse max., V 3.5 Output stage photodiode Current transfer coefficient CTR,% 1.5 at input current Iin., mA 10 Maximum output reverse voltage Uout.reverse max., V 100 Output signal rise time tnr., µs 0.5 Decay time of the output signal tsp., µs 0.5 Insulation resistance between input and output circuits, GΩ 1 Maximum insulation voltage, V 100 Operating temperature, С -60…70 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode 30BQ100TRPBF
#4325
|
20296 | VISHAY | 135 шт |
6 грн.
|
|
0.5 | — | — | — | SMD | DO-214AC, SMA | 100V | 3.0A | — | Schottky | — | — | 1000pcs | — | — | — | — | — | — | — | single | |||||||||||
Triac BT137x-600E
#5636
|
21151 | NXP | 135 шт |
18 грн.
|
|
2.5 | — | — | — | DIP | TO-220F | 600V | 8A | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
Transistor 2N4403
#6596
|
22515 | FAIRCHILD SEMICONDUCTOR | 135 шт |
1.20 грн.
|
|
0.25 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 625мВт | 1000pcs | 40В | 600мА | — | 300 | — | — | — | — | |||||||||||
Phototransistor KTF104A
#11586
|
23817 | СНГ | 135 шт |
8 грн.
|
|
Silicon planar npn phototransistor with a photosensitive element area of 0.64 mm2 is produced in a plastic case. | 0.2 | — | — | Photo | — | — | — | — | — | — | NPN | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Transistor P216D
#14718
|
26936 | СНГ | 135 шт |
15 грн.
|
|
The main technical characteristics of the transistor P216D: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 50 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 15... 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 24Вт | 20pcs | 50В | 7,5A | 0,1МГц | 30 | — | — | — | — | ||||||||||
Diode KD248D
#15467
|
27706 | СНГ | 135 шт |
10 грн.
|
|
The main technical characteristics of the KD248D diode: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 3 A; • fd - Operating frequency of the diode: 100 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 3 A; • Iobr - Constant reverse current: no more than 40 μA at Uobr 600 V; • tvoc - Reverse recovery time: 0.25 µs. | 1 | — | — | — | DIP | — | 600V | 3.0A | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||||
Transistor KT361A
#6843
|
24622 | СНГ | 134 шт |
2 грн.
|
|
Designed for use in high frequency amplifiers. | 0.2 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 1000pcs | 25В | 50мА | 250МГц | 90 | — | — | — | — | ||||||||||
Chip KM555IP4
#10170
|
22060 | СНГ | 134 шт |
6 грн.
|
|
Arithmetic logic unit (ALU). | 1.5 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor 2SA1273
#10482
|
22522 | KEC | 134 шт |
2.50 грн.
|
|
0.5 | — | TO92MOD | Bipolar | DIP | — | — | — | — | — | PNP | 1Вт | 200pcs | 30В | 2А | 120МГц | 320 | — | — | — | — | |||||||||||
KDS111B, Diode assembly
#11414
|
23531 | СНГ | 134 шт |
2.50 грн.
|
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Diode assembly, each consisting of two diodes connected with a common anode. | 0.3 | — | — | — | DIP | — | 300V | 200mA | — | Rectifier | — | — | 250pcs | — | — | — | — | — | — | — | double common anode | ||||||||||
| 20183 | VISHAY | 133 шт |
6 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 47V | — | |||||||||||
Chip 228UV1
#11783
|
24013 | СНГ | 133 шт |
42 грн.
|
|
The 228UV1 chip is a universal amplifier based on a single transistor. | 2.1 | — | — | — | DIP | — | — | — | Amplifiers | — | — | — | 20pcs | — | — | — | — | — | — | — | — | ||||||||||
| 20149 | VISHAY | 132 шт |
8 грн.
|
|
1.6 | — | — | — | DIP | DO-201AD | 800V | 3.0A | — | Fast | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||||||
| 25105 | ON SEMICONDUCTOR | 132 шт |
4 грн.
|
|
0.12 | — | — | — | SMD | SC88 | — | — | — | Protective | — | 100Вт | 3000pcs | — | — | — | — | — | — | 6.8V | assembly | ||||||||||||
| 22793 | СНГ | 130 шт |
15 грн.
|
|
Pillars of silicon, diffusion diodes, rectifiers. Designed for use in high-voltage secondary power supply units with additional sealing. | 1.6 | — | — | — | DIP | — | 4kV | 50mA | — | High voltage | — | — | 100 pieces. | — | — | — | — | — | — | — | single | |||||||||||
Diode KD221A
#11432
|
23550 | СНГ | 130 шт |
1 грн.
|
|
Diodes KD221A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 50 kHz. | 0.3 | — | — | — | DIP | КД-5А | 100V | 700mA | — | Rectifier | — | — | 500pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip LP2985-18DBVT (LPHL)
#16855
|
29101 | TEXAS INSTRUMENTS | 130 шт |
42 грн.
|
|
0.11 | SOT23-5 | — | — | SMD | — | — | — | Nutrition | — | — | — | 250pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip KM155LA8
#759
|
21259 | СНГ | 129 шт |
6 грн.
|
|
Integrated circuit of the TTL series. KM155LA8 microcircuits are 4 2I-NOT logic elements with an open collector output (control element). Contains 32 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes KM155LA8: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20189 | VISHAY | 129 шт |
7 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 220V | — | |||||||||||
Transistor 2N2222A
#9670
|
20876 | FAIRCHILD SEMICONDUCTOR | 129 шт |
1 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 625мВт | 1000pcs | 40В | 600мА | 300МГц | 100 | — | — | — | — | |||||||||||
Chip K561LE6
#774
|
21400 | СНГ | 128 шт |
5 грн.
|
|
Two logical elements 4OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor P306
#11879
|
24132 | СНГ | 128 шт |
15 грн.
|
|
Transistors P306 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 10Вт | 40pcs | 60В | 400мА | — | 25 | — | — | — | — | ||||||||||
Chip K131LA4
#12220
|
24598 | СНГ | 128 шт |
6 грн.
|
|
3 logical elements 3I-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — |
