Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Diode SS510
#12761
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25117 | GALAXY ELECTRICAL | 128 шт |
3 грн.
|
|
0.3 | — | — | — | SMD | DO-214AB | 100V | 5A | — | Schottky | — | — | — | — | 2000pcs | — | — | — | — | — | — | — | single | |||||||||||
Zener diode D818V
#12245
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24627 | СНГ | 126 шт |
4 грн.
|
|
The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | 9V | kd-8 | — | — | ||||||||||
Chip KR505RE3 0111
#14442
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26654 | СНГ | 126 шт |
10 грн.
|
|
ROM (512 x 8, p-MOS). | 1.3 | SO24 | — | — | SMD | — | — | — | Memory | — | — | — | — | — | 140pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 2V0
#4216
|
20217 | Rectron Semiconductor | 123 шт |
1 грн.
|
|
Zener diode 2.0V 0.5W (BZX55C 2V0) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 2V0 | DO-35 | — | — | ||||||||||
Zener diode KS222Zh
#10378
|
22385 | СНГ | 123 шт |
3 грн.
|
|
Silicon zener diode, planar, low power. | 0.2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 125мВт | 100 pieces. | — | — | — | — | 22V | kd2 | — | — | ||||||||||
Chip KM555LA2
#9898
|
21697 | СНГ | 122 шт |
4 грн.
|
|
Logic element 8I-NOT. | 1.1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip KM1008VZH1
#10336
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22322 | СНГ | 122 шт |
27 грн.
|
|
Electronic dialer with internal RAM for 22 digits for push-button telephones with pulse dialing. | 2.1 | DIP22 | — | — | DIP | — | — | — | Telephony | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K145IK11P
#14425
|
26634 | СНГ | 122 шт |
20 грн.
|
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Scheme of management of storage devices (memory). | 3.2 | — | — | — | DIP | — | — | — | Interfaces | — | — | — | — | — | 32pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K176LE10
#824
|
22295 | СНГ | 121 шт |
6 грн.
|
|
3 logical elements 3OR-NOT. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 22776 | СНГ | 121 шт |
55 грн.
|
|
Appointment - differential system for the equipment of digital system IKM-30-4. | 2 | DIP28 | — | — | DIP | — | — | — | Telephony | — | — | — | — | — | 25pcs | — | — | — | — | — | — | — | — | |||||||||||
Chip K176RU2
#828
|
21880 | СНГ | 120 шт |
6 грн.
|
|
256-bit random access memory (RAM) with control. | 1.1 | DIP16 | — | — | DIP | — | — | — | Memory | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K170AA7
#5697
|
26313 | СНГ | 120 шт |
8 грн.
|
|
The shaper of the incoming currents. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K176PU3
#8382
|
21911 | СНГ | 120 шт |
6 грн.
|
|
Logic level converter. | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
FEU-79 photomultiplier
#13921
|
26100 | СНГ | 120 шт |
700 грн.
|
|
Photomultiplier tube with electrostatic focusing of electrons for measuring extremely low light fluxes in a wide spectral region. It is used in astronomy, astrophysics and spectral analysis. The photocathode is antimony-sodium-potassium-cesium. Optical input - end. The diameter of the working area of the cathode is 6 mm. Number of amplification stages 11. | 200 | — | — | — | — | — | — | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | — | ||||||||||
| 22521 | TOSHIBA | 119 шт |
3 грн.
|
|
0.5 | — | TO92L | — | DIP | — | — | — | — | — | NPN | — | — | 1Вт | 200pcs | 30В | 2А | 120МГц | 320 | — | — | — | — | ||||||||||||
Chip IP113C LF
#4129
|
20068 | ICPLUS | 118 шт |
72 грн.
|
|
0.7 | LQFP48 | — | — | SMD | — | — | — | ethernet | — | — | — | — | — | 250pcs | — | — | — | — | — | — | — | — | |||||||||||
Transistor MP111
#11391
|
23502 | СНГ | 118 шт |
6 грн.
|
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Silicon alloyed npn amplifying low-frequency transistor with non-normalized noise figure. Designed to amplify low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 20В | 100мА | 0,5МГц | 25 | — | — | — | — | ||||||||||
Chip K155IE1
#4070
|
21233 | СНГ | 117 шт |
8 грн.
|
|
K155IE1 microcircuits are a ten-day counter with a phase-pulse presentation of information. Contains 105 integral elements. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 20187 | VISHAY | 117 шт |
7 грн.
|
|
DO201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | — | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 6.8V | — | |||||||||||
STK0260
#4379
|
20971 | AUK | 116 шт |
12 грн.
|
|
download datasheet STK0260 pdf,477 KB | 2 | — | TO220F | Field | DIP | — | — | — | — | — | MOS n-channel | 600В | 600мА | 1.3Вт | 50pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KR531IK1 (=AM25S05N)
#14341
|
26549 | СНГ | 116 шт |
10 грн.
|
|
Fast multiplier 2x4. | 3 | DIP24 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K555LA9
#899
|
21425 | СНГ | 115 шт |
6 грн.
|
|
Four logic elements 2I-NOT with an open collector output. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip KR531IP5 (=SN74S280)
#13726
|
25893 | СНГ | 115 шт |
6 грн.
|
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Parity check scheme. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor P216B
#14715
|
26933 | СНГ | 115 шт |
15 грн.
|
|
The main technical characteristics of the P216B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 10 | — | — | — | — | ||||||||||
Transistor MP102
#16894
|
29141 | СНГ | 115 шт |
7 грн.
|
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Transistors MP102 silicon alloy npn amplifying low-frequency with non-standard noise figure at a frequency of 1 kHz. Designed to amplify and switch low frequency signals. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 100мВт | 100 pieces. | 10В | 20мА | 0,5МГц | 45 | — | — | — | — | ||||||||||
Transistor 2SB892
#2376
|
22523 | SANYO | 114 шт |
4 грн.
|
|
0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 1Вт | 200pcs | 60В | 2А | 150МГц | 560 | — | — | — | — | |||||||||||
Varicap KV109B
#11393
|
23504 | — | 113 шт |
2.50 грн.
|
Rated capacitance at reverse voltage 25 V 2.15 pF Capacitance minimum at reverse voltage 25 V 2 pF Maximum capacitance at reverse voltage 25 V 2.3 pF Quality factor at a frequency of 50 MHz, reverse voltage 3 V 300 Capacitance overlap factor at 3 ... 25 V 4.5 ... 6.5 Reverse current at reverse voltage 28 V 0.5 μA | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||||
Chip KR572PV1
#695
|
22306 | СНГ | 112 шт |
20 грн.
|
|
12-bit successive approximation analog-to-digital converter. | 7 | DIP40 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor 2SA970
#2368
|
22510 | TOSHIBA | 112 шт |
4 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 200pcs | 120В | 100мА | 100МГц | 375 | — | — | — | — | |||||||||||
Diode 1N5399
#1004
|
20133 | MIC | 111 шт |
1 грн.
|
|
Maximum DC reverse voltage, V1000 Maximum direct (rectified for a half-cycle) current, A1.5 HousingDO15 Operating temperature, С-65…150 | 0.4 | — | — | — | DIP | DO-15 | 1000V | 1A | — | Rectifier | — | — | — | — | 500pcs | — | — | — | — | — | — | — | single |
