Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
Thyristor KU102G
#13691
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25851 | СНГ | 109 шт |
20 грн.
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Silicon thyristors KU102G, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102G: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs. • Ambient temperature operating range: -60... +125 °С | 1.2 | — | — | — | DIP | — | 200V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Transistor 2SC2655Y
#2172
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22529 | TOSHIBA | 108 шт |
3 грн.
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0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | — | NPN | 900мВт | 200pcs | 50В | 2А | 100МГц | 240 | — | — | — | — | |||||||||||
Chip K564LE10 (nick.)
#10396
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22405 | СНГ | 107 шт |
8 грн.
|
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Three three-input elements OR-NOT. | 0.5 | SO14 | — | — | SMD | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Diode D101A
#16152
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28393 | СНГ | 106 шт |
3 грн.
|
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Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | — | — | — | DIP | D104 | 75V | 30mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
| 20196 | VISHAY | 105 шт |
9 грн.
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DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 250V | — | |||||||||||
| 21186 | ST MICROELECTRONICS | 105 шт |
41 грн.
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0.4 | SO8 | — | — | SMD | — | — | — | — | Interfaces | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||||
Chip K145HK3P
#14431
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26640 | СНГ | 105 шт |
20 грн.
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Input device. | 3.5 | — | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 32pcs | — | — | — | — | — | — | — | — | ||||||||||
| 23868 | СНГ | 104 шт |
22 грн.
|
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Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. | 2 | — | — | Bipolar | SMD | — | — | — | — | — | — | PNPx2 | 20мВт | 200pcs | 15В | 20мА | 500МГц | 140 | — | — | — | — | |||||||||||
Transistor KT807A
#14151
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26345 | СНГ | 104 шт |
8 грн.
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Transistors silicon mezaplanarny structures npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. | 2.5 | — | — | Bipolar | DIP | — | — | — | — | — | — | NPN | 10Вт | 20pcs | 100В | 500мА | 5МГц | 45 | — | — | — | — | ||||||||||
Chip K531TV11P (=SN74S114)
#14344
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26552 | СНГ | 104 шт |
6 грн.
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Two JK flip-flops with set and reset inputs | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K511PU1
#844
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24928 | СНГ | 103 шт |
6 грн.
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High-to-low converter: two 2NAND gates and two AND-spread NOT gates. | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 15V
#4204
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20218 | Rectron Semiconductor | 103 шт |
1 грн.
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Zener diode 15V 0.5W (BZX55C 15V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 15V | DO-35 | — | — | ||||||||||
Chip K555VZh1 (=SN74LS630)
#13563
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25698 | СНГ | 103 шт |
8 грн.
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16-bit Hamming code control circuit. | 2.5 | DIP28 | — | — | DIP | — | — | — | — | Logics | — | — | — | 60pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip 589IR12
#14489
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26704 | СНГ | 102 шт |
30 грн.
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5 Acceptance. Multi-mode buffer register and is designed to connect various external devices of a microprocessor computing device using a single data highway. | 3.7 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K561IK1
#4057
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22195 | СНГ | 101 шт |
6 грн.
|
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Built-in majority-multiplexer element. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 3V0
#4186
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20201 | Rectron Semiconductor | 101 шт |
1 грн.
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Zener diode 3.0V 0.5W (BZX55C 3V0) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 3V0 | DO-35 | — | — | ||||||||||
Chip KR142EN8E (=7815) 15V
#10100
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21838 | СНГ | 101 шт |
10 грн.
|
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Voltage stabilizer 15V; 1.0A Housing: KT28-2 (TO220) | 2.5 | TO-220 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K561IR6
#10796
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22985 | СНГ | 101 шт |
12 грн.
|
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Eight-bit shift register. | 2.5 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 120pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode D226D
#8879
|
22960 | СНГ | 100 шт |
4 грн.
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The main technical characteristics of the diode D226D: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 2 | — | — | — | DIP | КД-8 | 100V | 300mA | — | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip K564TP2 (nick.)
#10437
|
22449 | СНГ | 100 шт |
23 грн.
|
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Four RS-flip-flops (asynchronous) with a third state at the input. | 0.7 | SO16 | — | — | SMD | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor TN6714A
#10492
|
22537 | FAIRCHILD SEMICONDUCTOR | 100 шт |
4 грн.
|
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0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | — | NPN | 1Вт | 1000pcs | 30В | 1А | — | 250 | — | — | — | — | |||||||||||
| 23360 | Taychipst | 100 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 11V | — | ||||||||||||
| 23383 | Taychipst | 100 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 68V | — | ||||||||||||
| 23386 | Taychipst | 100 шт |
3 грн.
|
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0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 91V | — | ||||||||||||
Chip KR145IP16B
#14443
|
26655 | СНГ | 100 шт |
20 грн.
|
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A circuit that implements a set of mathematical operations for a microcalculator. | 4.2 | — | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 70pcs | — | — | — | — | — | — | — | — | ||||||||||
Triac BTA140-800
#5627
|
21140 | NXP | 99 шт |
26 грн.
|
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2.8 | — | — | — | DIP | TO-220 | 800V | 25A | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
| 21648 | TEXAS INSTRUMENTS | 99 шт |
17 грн.
|
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0.7 | SO20 | — | — | SMD | — | — | — | — | Logics | — | — | — | 38pcs | — | — | — | — | — | — | — | — | ||||||||||||
Chip TNY275GN
#13662
|
25828 | Power Integrations | 99 шт |
25 грн.
|
|
0.5 | SMD-8B | — | — | SMD | — | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | — | |||||||||||
| 24599 | СНГ | 98 шт |
8 грн.
|
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The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. | 2 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 20В | 120мА | 120МГц | 120 | — | — | — | — | |||||||||||
Diode D226B
#8878
|
25873 | СНГ | 98 шт |
5 грн.
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Diodes D226B silicon, alloy. The main technical characteristics of the diode D226B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. | 1 | — | — | — | DIP | КД-8 | 400V | 300mA | — | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | single |
