Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Breakdown voltage | Diode design |
|---|
| 20184 | VISHAY | 111 шт |
8 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 20V | — | |||||||||||
Transistor 2SB764
#10484
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22527 | TOSHIBA | 111 шт |
3 грн.
|
|
0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | — | PNP | 900мВт | 200pcs | 60В | 1А | 150МГц | 320 | — | — | — | — | |||||||||||
Chip K511LA4
#847
|
21426 | СНГ | 110 шт |
6 грн.
|
|
Two logical elements 4I-NOT with AND expansion. | 1.5 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor P210B
#12950
|
25221 | СНГ | 110 шт |
60 грн.
|
|
P210B Transistors P210B germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. Are issued in the glass-to-metal case with rigid conclusions. The device type is indicated on the case. The mass of the transistor is not more than 37 g with terminal tips and not more than 48.5 g with a mounting flange. Specifications: aA0.336.483 TU. The main technical characteristics of the P210B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 45 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A. • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 15 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 10 | 34 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 45Вт | 10 pieces. | 65В | 12А | — | 10 | — | — | — | — | ||||||||||
Chip K176LP12
#832
|
21671 | СНГ | 109 шт |
6 грн.
|
|
2 logical elements 4I-NOT and a logical element NOT. | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
| 21337 | СНГ | 109 шт |
8 грн.
|
|
Integrated circuit of the TTL series. K155LI5 microcircuits are 2 2I logic elements with a powerful open collector output. Contains 20 integral elements. Housing type 201.14-1, weight no more than 1 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Thyristor KU102G
#13691
|
25851 | СНГ | 109 шт |
20 грн.
|
Silicon thyristors KU102G, diffusion, pnpn structures, triode, lockable. Designed for use as low power switching elements. The main technical parameters of the thyristor KU102G: • Maximum DC reverse voltage: 5 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 5 A; • Repetitive pulse current in the open state: 0.05 A; • Voltage in the open state: no more than 2.5 V; • Non-opening constant control voltage: not less than 0.2 V; • Direct current in the closed state: not less than 0.15 mA; • Blocking impulse control current: 20 mA; • Constant unlocking control voltage: 12 V; • Voltage slew rate in closed state: 200 V/µs; • Turn-on time: 5 µs; • Turn-off time: 20 µs. • Ambient temperature operating range: -60... +125 °С | 1.2 | — | — | — | DIP | — | 200V | — | 5A | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | |||||||||||
Transistor 2SC2655Y
#2172
|
22529 | TOSHIBA | 108 шт |
3 грн.
|
|
0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | — | NPN | 900мВт | 200pcs | 50В | 2А | 100МГц | 240 | — | — | — | — | |||||||||||
Chip K564LE10 (nick.)
#10396
|
22405 | СНГ | 107 шт |
8 грн.
|
|
Three three-input elements OR-NOT. | 0.5 | SO14 | — | — | SMD | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 3V0
#4186
|
20201 | Rectron Semiconductor | 106 шт |
1 грн.
|
|
Zener diode 3.0V 0.5W (BZX55C 3V0) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 3V0 | DO-35 | — | — | ||||||||||
Diode D101A
#16152
|
28393 | СНГ | 106 шт |
3 грн.
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Diodes D101A silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.3 | — | — | — | DIP | D104 | 75V | 30mA | — | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | single | ||||||||||
| 20196 | VISHAY | 105 шт |
9 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | — | — | 250V | — | |||||||||||
| 21186 | ST MICROELECTRONICS | 105 шт |
41 грн.
|
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0.4 | SO8 | — | — | SMD | — | — | — | — | Interfaces | — | — | — | 50pcs | — | — | — | — | — | — | — | — | ||||||||||||
Chip K145HK3P
#14431
|
26640 | СНГ | 105 шт |
20 грн.
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Input device. | 3.5 | — | — | — | DIP | — | — | — | — | Interfaces | — | — | — | 32pcs | — | — | — | — | — | — | — | — | ||||||||||
| 23868 | СНГ | 104 шт |
22 грн.
|
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Transistor assemblies consisting of two silicon epitaxial-planar structures of pnp amplifying transistors on the same chip with separate leads. Designed for use in broadband balanced, differential and operational amplifiers and other stages of hermetically sealed equipment, which require the identity of the parameters of two transistors. | 2 | — | — | Bipolar | SMD | — | — | — | — | — | — | PNPx2 | 20мВт | 200pcs | 15В | 20мА | 500МГц | 140 | — | — | — | — | |||||||||||
Transistor KT807A
#14151
|
26345 | СНГ | 104 шт |
8 грн.
|
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Transistors silicon mezaplanarny structures npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. | 2.5 | — | — | Bipolar | DIP | — | — | — | — | — | — | NPN | 10Вт | 20pcs | 100В | 500мА | 5МГц | 45 | — | — | — | — | ||||||||||
Chip K531TV11P (=SN74S114)
#14344
|
26552 | СНГ | 104 шт |
6 грн.
|
|
Two JK flip-flops with set and reset inputs | 1 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Chip K174AF4A
#784
|
21964 | СНГ | 103 шт |
15 грн.
|
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The K174AF4A chip is designed to obtain RGB color signals from two color difference and brightness signals, as well as a signal for adjusting saturation. The main functional purpose; color saturation adjustment, formation of R, G, B signals in color image television receivers together with K174UP1 and K174XA1 microcircuits. | 1.2 | DIP16 | — | — | DIP | — | — | — | — | TV | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K511PU1
#844
|
24928 | СНГ | 103 шт |
6 грн.
|
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High-to-low converter: two 2NAND gates and two AND-spread NOT gates. | 1.2 | DIP14 | — | — | DIP | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Zener diode BZX55C 15V
#4204
|
20218 | Rectron Semiconductor | 103 шт |
1 грн.
|
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Zener diode 15V 0.5W (BZX55C 15V) | 0.12 | — | — | — | DIP | — | — | — | — | — | — | — | 500мВт | 500pcs | — | — | — | — | 15V | DO-35 | — | — | ||||||||||
Chip K555VZh1 (=SN74LS630)
#13563
|
25698 | СНГ | 103 шт |
8 грн.
|
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16-bit Hamming code control circuit. | 2.5 | DIP28 | — | — | DIP | — | — | — | — | Logics | — | — | — | 60pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K561IR6
#10796
|
22985 | СНГ | 102 шт |
12 грн.
|
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Eight-bit shift register. | 2.5 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 120pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip 589IR12
#14489
|
26704 | СНГ | 102 шт |
30 грн.
|
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5 Acceptance. Multi-mode buffer register and is designed to connect various external devices of a microprocessor computing device using a single data highway. | 3.7 | DIP24 | — | — | DIP | — | — | — | — | Logics | — | — | — | 36pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip K561IK1
#4057
|
22195 | СНГ | 101 шт |
6 грн.
|
|
Built-in majority-multiplexer element. | 1.1 | DIP16 | — | — | DIP | — | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | — | ||||||||||
Chip KR142EN8E (=7815) 15V
#10100
|
21838 | СНГ | 101 шт |
10 грн.
|
|
Voltage stabilizer 15V; 1.0A Housing: KT28-2 (TO220) | 2.5 | TO-220 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||||
Diode D226B
#8878
|
25873 | СНГ | 100 шт |
5 грн.
|
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Diodes D226B silicon, alloy. The main technical characteristics of the diode D226B: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 300 V. | 1 | — | — | — | DIP | КД-8 | 400V | 300mA | — | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||||
Diode D226D
#8879
|
22960 | СНГ | 100 шт |
4 грн.
|
|
The main technical characteristics of the diode D226D: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 100 μA at Uobr 100 V | 2 | — | — | — | DIP | КД-8 | 100V | 300mA | — | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | single | ||||||||||
Chip K564TP2 (nick.)
#10437
|
22449 | СНГ | 100 шт |
23 грн.
|
|
Four RS-flip-flops (asynchronous) with a third state at the input. | 0.7 | SO16 | — | — | SMD | — | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | ||||||||||
Transistor TN6714A
#10492
|
22537 | FAIRCHILD SEMICONDUCTOR | 100 шт |
4 грн.
|
|
0.5 | — | TO92L | Bipolar | DIP | — | — | — | — | — | — | NPN | 1Вт | 1000pcs | 30В | 1А | — | 250 | — | — | — | — | |||||||||||
| 23360 | Taychipst | 100 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | — | — | 11V | — |
