Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Breakdown voltage | Diode design |
|---|
| 23383 | Taychipst | 100 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 68V | — | ||||||||||||
| 23386 | Taychipst | 100 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 91V | — | ||||||||||||
Chip KR145IP16B
#14443
|
26655 | СНГ | 100 шт |
20 грн.
|
|
A circuit that implements a set of mathematical operations for a microcalculator. | 4.2 | — | — | — | SMD | — | — | — | Microcontrollers | — | — | — | 70pcs | — | — | — | — | — | — | ||||||||||
Triac BTA140-800
#5627
|
21140 | NXP | 99 шт |
26 грн.
|
|
2.8 | — | — | — | DIP | TO-220 | 800V | 25A | — | — | — | — | 50pcs | — | — | — | — | — | — | |||||||||||
| 21648 | TEXAS INSTRUMENTS | 99 шт |
17 грн.
|
|
0.7 | SO20 | — | — | SMD | — | — | — | Logics | — | — | — | 38pcs | — | — | — | — | — | — | ||||||||||||
Chip TNY275GN
#13662
|
25828 | Power Integrations | 99 шт |
25 грн.
|
|
0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | |||||||||||
| 24599 | СНГ | 98 шт |
8 грн.
|
|
The main technical characteristics of the transistor 1T308B: • Structure: pnp • Рк max - Constant power dissipation of the collector: 150 mW; • Fgr - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter and a common base: not less than 120 MHz; • Ukbo - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 20 V; • Uebo - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 50 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 5 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 50...120 (1V; 10mA); • Sk - Collector junction capacity: no more than 8 (5V); • Rke us - Saturation resistance between collector and emitter: no more than 24 Ohm; • Ksh - Transistor noise factor: not standardized; • tk - Time constant of the feedback circuit at high frequency: no more than 400 ps. | 2 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 20В | 120мА | 120МГц | 120 | — | — | |||||||||||
Chip KM555IR15
#9763
|
21285 | СНГ | 98 шт |
6 грн.
|
|
The register is four-bit with a buffer bus and three output states. | 1.1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||||
Transistor 2N5962
#10480
|
22514 | FAIRCHILD SEMICONDUCTOR | 98 шт |
1.20 грн.
|
|
0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | 625мВт | 1000pcs | 45В | 100мА | — | 1400 | — | — | |||||||||||
| 23394 | BL Galaxy Electrical | 98 шт |
3.50 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 250V | — | ||||||||||||
Transistor MP10
#13698
|
25858 | СНГ | 98 шт |
8 грн.
|
|
Transistor MP10 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. The main technical characteristics of the MP10 transistor: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 150 mW; • fh21b - The limiting frequency of the transistor current transfer coefficient for circuits with a common emitter and a common base: at least 1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 15 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 20 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 30 µA; • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter and a common base, respectively: 10...30; • Sk - Collector junction capacitance: no more than 60 pF; • tk - Time constant of the feedback circuit at high frequency: no more than 5000 ps; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 15В | 20мА | 1МГц | 30 | — | — | ||||||||||
Diode 1N4448WS-7-F
#16861
|
29108 | DIOTEC SEMICONDUCTOR | 98 шт |
1.50 грн.
|
|
0.1 | — | — | — | SMD | SOD123 | 75V | 250mA | — | Fast | — | — | 3000pcs | — | — | — | — | — | single | |||||||||||
Transistor YGW40N65F1
#17177
|
29427 | luxin-semi | 98 шт |
95 грн.
|
|
6.5 | — | TO247 | IGBT | DIP | — | — | — | — | — | — | 188Вт | 30pcs | 650В | 40А | — | — | — | — | |||||||||||
| 20167 | VISHAY | 97 шт |
5 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | 75V | — | |||||||||||
| 23388 | VISHAY | 97 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 100V | — | ||||||||||||
| 20181 | VISHAY | 96 шт |
4 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | 51V | — | |||||||||||
| 23374 | Taychipst | 96 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 30V | — | ||||||||||||
| 25881 | Taychipst | 96 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 82V | — | ||||||||||||
| 23390 | VISHAY | 96 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 150V | — | ||||||||||||
Chip KM555KP15
#4061
|
22014 | СНГ | 95 шт |
5 грн.
|
|
TTL series digital microcircuit. KM555KP15 microcircuits are an eight-input selector-multiplexer with three stable states. Contain 148 integral elements. | 1.3 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||||
| 20198 | VISHAY | 95 шт |
9 грн.
|
|
DO-201 | 1.1 | — | — | — | DIP | DO-201AD | — | — | — | Protective | — | 1.5кВт | 200pcs | — | — | — | — | 440V | — | |||||||||||
Chip I1533LE1
#9814
|
21397 | СНГ | 95 шт |
21 грн.
|
|
Four logical elements 2OR-NOT. | 0.5 | SO14 | — | — | SMD | — | — | — | Logics | — | — | — | 200pcs | — | — | — | — | — | — | ||||||||||
| 23384 | Taychipst | 95 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 75V | — | ||||||||||||
| 23387 | VISHAY | 95 шт |
3 грн.
|
|
0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | 600Вт | 1000pcs | — | — | — | — | 100V | — | ||||||||||||
Chip KS531LA12 (=SN74S37)
#14348
|
26556 | СНГ | 95 шт |
6 грн.
|
|
Four logic elements 2I-NOT with high load capacity. | 1.2 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | ||||||||||
Diode MUR4100ERLG
#17234
|
29487 | ON SEMICONDUCTOR | 95 шт |
20 грн.
|
|
1.1 | — | — | — | DIP | DO-201AD | 1000V | 4А | — | Fast | — | — | 1500pcs. | — | — | — | — | — | single | |||||||||||
Transistor KT807B
#11375
|
23486 | СНГ | 94 шт |
15 грн.
|
|
Transistor silicon mezaplanar structure npn universal. Designed for use in horizontal and vertical scan generators, low-frequency amplifiers, secondary power supplies. | 2.5 | — | — | Bipolar | DIP | — | — | — | — | — | NPN | 10Вт | 100 pieces. | 100В | 500мА | 5МГц | 100 | — | — | ||||||||||
| 20160 | MIC | 93 шт |
10 грн.
|
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1.6 | — | — | — | DIP | DO-201AD | 600V | 2A | — | Fast | — | — | 250pcs | — | — | — | — | — | single | ||||||||||||
Chip TNY279GN
#13666
|
25834 | Power Integrations | 93 шт |
36 грн.
|
|
0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | |||||||||||
Chip K155RE23
#958
|
21288 | СНГ | 92 шт |
6 грн.
|
|
Integrated circuit of the TTL series. K155RE23 microcircuits are a read-only memory (ROM) with a capacity of 1024 bits (with organization 256x4) using arithmetic characters and numbers as a binary code converter. Contains 1620 integral elements. Housing type 238.16-2, weight no more than 2 g. Maximum permissible operating modes K155RE23: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP16 | — | — | DIP | — | — | — | Memory | — | — | — | 90pcs | — | — | — | — | — | — |
