Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Breakdown voltage | Diode design |
|---|
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Transistor assembly 1TS609B
#10413
|
22425 | СНГ | — |
16 грн.
|
|
— | Four germanium diffusion-alloy p-p-p switching high-frequency low-power transistors. | 1.5 | — | — | — | DIP | — | — | — | Transistor Assembly | — | — | — | — | — | 40pcs | — | — | — | — | — | — | |||||||||
| 22442 | SEMIKRON | — |
1,750 грн.
|
|
— | 110 | — | — | — | Screw | — | 2kV | 70A | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | |||||||||||
| 22455 | DC COMPONENTS | — |
2 грн.
|
|
— | 1 | — | — | — | DIP | DO-201AD | 20V | 3.0A | — | Schottky | — | — | — | — | 500pcs | — | — | — | — | — | single | |||||||||||
| 22456 | DC COMPONENTS | — |
2.20 грн.
|
|
— | 1 | — | — | — | DIP | DO-201AD | 30V | 3.0A | — | Schottky | — | — | — | — | 500pcs | — | — | — | — | — | single | |||||||||||
|
Chip TDA2050V
#10444
|
22457 | ST MICROELECTRONICS | — |
14 грн.
|
|
— | 2.8 | TO-220-5 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | ||||||||||
|
Chip MC34119P
#10445
|
22458 | ON SEMICONDUCTOR | — |
10 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | ||||||||||
|
Chip MC34119D
#10446
|
22459 | UTC | — |
7 грн.
|
|
— | 0.5 | SO8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | ||||||||||
|
Transistor TIP110
#10447
|
22460 | SMG | — |
7 грн.
|
|
— | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 50Вт | 50pcs | 60В | 2А | — | 1000 | — | — | ||||||||||
|
Transistor TIP130
#10451
|
22467 | ST MICROELECTRONICS | — |
10 грн.
|
|
— | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 70Вт | 50pcs | 60В | 8А | — | 1000 | — | — | ||||||||||
|
Transistor TIP34C
#10456
|
22477 | ST MICROELECTRONICS | — |
31 грн.
|
|
— | 7.5 | — | TO247 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 80Вт | 30pcs | 100В | 10А | — | 100 | — | — | ||||||||||
|
Diode 20CTQ150
#10460
|
22483 | INTERNATIONAL RECTIFIER | — |
24 грн.
|
|
— | 2.5 | — | — | — | DIP | TO-220 | 150V | 20A | — | Schottky | — | — | — | — | 50pcs | — | — | — | — | — | double common cathode | ||||||||||
|
Diode M7 (=1N4007smd)
#10463
|
22486 | TOSHIBA | — |
1 грн.
|
|
— | 1A 1000V | 0.34 | — | — | — | SMD | SMA | 1000V | 1A | — | Rectifier | — | — | — | — | 2000pcs | — | — | — | — | — | single | |||||||||
|
Schottky diode SS24
#10465
|
22488 | TOSHIBA | — |
1.50 грн.
|
|
— | 0.3 | — | — | — | SMD | SMA | 40V | 2A | — | Schottky | — | — | — | — | 2000pcs | — | — | — | — | — | single | ||||||||||
| 22492 | DC COMPONENTS | — |
10 грн.
|
|
— | 2.5 | — | — | — | DIP | BR3 | 1000V | 3.0A | — | Diode bridge | — | — | — | — | 200pcs | — | — | — | — | — | — | |||||||||||
|
Transistor 2SC3832
#10469
|
22494 | SANKEN | — |
9 грн.
|
|
— | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 50Вт | 50pcs | 400В | 7А | 10МГц | 30 | — | — | ||||||||||
|
Transistor 2SC1061
#10470
|
22495 | MOSPEC | — |
9.50 грн.
|
|
— | 2.5 | — | TO220 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 25Вт | 50pcs | 50В | 3А | 5МГц | 320 | — | — | ||||||||||
| 22499 | UTC | — |
6 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | |||||||||||
|
Chip LM386N (=LM386)
#10475
|
22500 | NS | — |
5 грн.
|
|
— | 0.5 | DIP8 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | ||||||||||
|
Chip TEA2025B
#10476
|
22501 | TEXAS INSTRUMENTS | — |
12 грн.
|
|
— | 1 | DIP16 | — | — | DIP | — | — | — | Amplifiers | — | — | — | — | — | 25pcs | — | — | — | — | — | — | ||||||||||
|
Chip TA2003P
#10477
|
22502 | TOSHIBA | — |
17 грн.
|
|
— | 1 | DIP16 | — | — | DIP | — | — | — | radio reception | — | — | — | — | — | 25pcs | — | — | — | — | — | — | ||||||||||
|
Transistor BC184C
#10486
|
22531 | CDIL | — |
2 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 350мВт | 200pcs | 30В | 100мА | 280МГц | 900 | — | — | ||||||||||
|
Diode DCH251-160x-7
#10727
|
22784 | СНГ | — |
130 грн.
|
|
— | Fast recovery silicon diffusion diode. | 110 | — | — | — | Cooler | — | 700V | 160А | — | Rectifier | — | — | — | — | 6pcs | — | — | — | — | — | single | |||||||||
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Transistor KT683E
#10731
|
22796 | СНГ | — |
3.50 грн.
|
|
— | Transistors silicon planar structures npn universal. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 1.2Вт | 200pcs | 60В | 1А | 50МГц | 480 | — | — | |||||||||
|
Transistor KT683A
#10732
|
22797 | СНГ | — |
4 грн.
|
|
— | Transistors silicon planar structures npn universal. | 0.7 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 1.2Вт | 200pcs | 150В | 1А | 50МГц | 480 | — | — | |||||||||
|
Transistor KT201AM
#10733
|
22798 | СНГ | — |
3.50 грн.
|
|
— | Transistors silicon epitaxial-planar structures p-p-p amplifying with non-normalized noise figure at a frequency of 1 kHz. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 200pcs | 20В | 20мА | 10МГц | 60 | — | — | |||||||||
|
Transistor KT315D
#10735
|
23557 | СНГ | — |
2 грн.
|
|
— | Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 800 pcs. | 40В | 100мА | 250МГц | 90 | — | — | |||||||||
|
Transistor KT315R
#10736
|
— | СНГ | — |
2 грн.
|
|
— | Transistors silicon epitaxial-planar structures npn amplifying. Designed for use in high, intermediate and low frequency amplifiers. | 0.25 | — | КТ-13 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 800 pcs. | 35В | 100мА | 250МГц | 350 | — | — | |||||||||
| 22802 | ST MICROELECTRONICS | — |
3 грн.
|
|
— | 0.4 | — | — | — | DIP | DO-15 | — | — | — | Protective | — | — | — | 600Вт | 1000pcs | — | — | — | — | 12V | — | |||||||||||
|
Chip 74HC245A (=HC245A)
#10767
|
22837 | ON SEMICONDUCTOR | — |
11 грн.
|
|
— | 1 | SO20 | — | — | SMD | — | — | — | Logics | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | ||||||||||
|
Transistor KP301V Au
#10768
|
22838 | СНГ | — |
28 грн.
|
|
— | Silicon planar field-effect transistors with an insulated gate and an induced p-type channel. Designed for use in the input stages of low-noise amplifiers, nonlinear low-signal circuits, stages with high input impedance. | 0.43 | — | КТ-14 | Field | DIP | — | — | — | — | — | MOS p-channel | 20В | 15мА | 200мВт | 100 pieces. | — | — | — | — | — | — |