Active radio components

Results: 8086

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type
Transistor KT814V
Transistor KT814V
#10805
 22995 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 60В 1.5А 3МГц 40 — —
Transistor KT814A
Transistor KT814A
#10806
 22996 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT814A silicon mesaepitaxial-planar structure pnp amplifying. 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 25В 1.5А 3МГц 40 — —
Transistor KT815A
Transistor KT815A
#10807
 22997 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor KT815A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 40В 1.5А 3МГц 40 — —
Transistor 2SA1156-Y
Transistor 2SA1156-Y
#10808
 22998 FAIRCHILD SEMICONDUCTOR —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
500+4,20 грн.
 — 0.7 TO126 Bipolar DIP PNP 10Вт 200pcs 400В 500мА — 200 — —
Transistor MP21E
Transistor MP21E
#10819
 23015 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor MP21E germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 70В 100мА 0,7МГц 150 — —
Transistor GT402A
Transistor GT402A
#10822
 23018 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402A germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 80 — —
Transistor GT402B
Transistor GT402B
#10823
 23019 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402B germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 150 — —
Transistor GT402V
Transistor GT402V
#10824
 23020 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402V germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 40В 500мА 1МГц 80 — —
Transistor GT402G
Transistor GT402G
#10825
 23021 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT402G germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 40В 500мА 1МГц 150 — —
Transistor KT815V
Transistor KT815V
#10826
 23022 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor KT815V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 TO126 Bipolar DIP NPN 10Вт 200pcs 70В 1.5А 3МГц 40 — —
Transistor GT402E
Transistor GT402E
#10827
 23023 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor GT402E germanium alloy structure pnp amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP PNP 300мВт 50pcs 25В 500мА 1МГц 150 — —
Transistor MP11
Transistor MP11
#10828
 23024 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor MP11 germanium alloyed npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 55 — —
Transistor MP16A
Transistor MP16A
#10831
 23027 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP16A germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 50 — —
Transistor MP16B
Transistor MP16B
#10832
 23028 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 100 — —
Transistor MP39B
Transistor MP39B
#10835
 23032 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 60 — —
Transistor MP41A
Transistor MP41A
#10836
 23033 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 1МГц 100 — —
Transistor MP38A
Transistor MP38A
#10837
 23034 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 100 — —
Transistor MP39
Transistor MP39
#10838
 23035 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 12 — —
Transistor GT403D
Transistor GT403D
#10841
 23038 СНГ —
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
 — Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 150 — —
Transistor GT403E
Transistor GT403E
#10842
 23039 СНГ —
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
 — Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 — Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А — 30 — —
Transistor P403
Transistor P403
#10844
 23041 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
 — Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100 — —
Transistor MP35
Transistor MP35
#10845
 23042 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 0,5МГц 125 — —
Transistor GT404A
Transistor GT404A
#10848
 23045 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 80 — —
Transistor GT404B
Transistor GT404B
#10849
 23046 СНГ —
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
 — Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 150 — —
Transistor GT404G
Transistor GT404G
#10850
 23047 СНГ —
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
 — Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 — Bipolar DIP NPN 600мВт 50pcs 40В 500мА 1МГц 150 — —
Transistor KT3117A au
Transistor KT3117A au
#10851
 23048 СНГ —
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
 — Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. 0.5 КТ-1 Bipolar DIP NPN 300мВт 100 pieces. 60В 400мА 200МГц 200 — —
Transistor 2T3108B (=KT3108B) au
Transistor 2T3108B (=KT3108B) au
#10852
 23049 СНГ —
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
 — Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. 0.5 КТ-1 Bipolar DIP PNP 300мВт 100 pieces. 45В 200мА 250МГц 150 — —
Transistor KT117B au
Transistor KT117B au
#10853
 23050 СНГ —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. 0.5 КТ-1 Bipolar DIP n-base 300мВт 100 pieces. — — — — — —
Zener diode 1N5333B(3V3)
Zener diode 1N5333B(3V3)
#11047
 23069 ON SEMICONDUCTOR —
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
 — 1 — — DIP — 5Вт 500pcs — — — — 3V3 do201
Zener diode 1N5335B(3V9)
Zener diode 1N5335B(3V9)
#11048
 23070 ON SEMICONDUCTOR —
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
 — 1 — — DIP — 5Вт 500pcs — — — — 3V9 do201