Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Transistor case type Transistor type Mounting type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type
23028 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP16B germanium low-frequency low-power alloyed pnp switching. Designed for application in switching circuit and pulse shaping. 1.8 КТЮ-3-3 Bipolar DIP PNP 200мВт 100 pieces. 15В 100мА 1МГц 100
23032 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor germanium alloyed pnp amplifying low-frequency with a noise figure normalized at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 60
23033 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor MP41A germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 1МГц 100
23034 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 2МГц 100
23035 СНГ
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
Transistor germanium alloyed pnp amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. 1.8 КТЮ-3-3 Bipolar DIP PNP 150мВт 100 pieces. 15В 30мА 0,5МГц 12
23038 СНГ
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
Transistor GT403D germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А 150
23039 СНГ
16 грн.
10+15,20 грн.
50+14,40 грн.
100+12,80 грн.
Transistor GT403E germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, DC converters and stabilizers. 3 Bipolar DIP PNP 4Вт 100 pieces. 45В 1,25А 30
23041 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
Transistor P403 - germanium, amplifying low-power, high-frequency, structures - pnp. 1.8 КТЮ-3-3 Bipolar DIP PNP 100мВт 100 pieces. 10В 20мА 120МГц 100
23042 СНГ
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
Transistor germanium alloy npn amplifying low-frequency with non-normalized noise figure at a frequency of 1 kHz. 1.8 КТЮ-3-3 Bipolar DIP NPN 150мВт 100 pieces. 15В 20мА 0,5МГц 125
23045 СНГ
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
Transistor GT404A germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 80
23046 СНГ
42 грн.
10+39,90 грн.
50+37,80 грн.
100+33,60 грн.
Transistor GT404B germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 25В 500мА 1МГц 150
23047 СНГ
45 грн.
10+42,75 грн.
50+40,50 грн.
100+36 грн.
Transistor GT404G germanium alloy structure npn amplifying. Designed for use in the output stages of low-frequency amplifiers. 3.5 Bipolar DIP NPN 600мВт 50pcs 40В 500мА 1МГц 150
23048 СНГ
40 грн.
10+38 грн.
50+36 грн.
100+32 грн.
Transistor KT3117A silicon epitaxial-planar structure npn pulse. Designed for use in pulse and switching devices. 0.5 КТ-1 Bipolar DIP NPN 300мВт 100 pieces. 60В 400мА 200МГц 200
23049 СНГ
30 грн.
10+28,50 грн.
50+27 грн.
100+24 грн.
Transistor 2T3108B silicon epitaxial-planar structure pnp amplifying with a normalized noise figure at a frequency of 100 MHz. Designed for use in logarithmic video amplifiers and high frequency linear amplifiers. 0.5 КТ-1 Bipolar DIP PNP 300мВт 100 pieces. 45В 200мА 250МГц 150
23050 СНГ
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
Transistor KT117B silicon epitaxial-planar single-junction with an n-type base. The transistor is intended for use in low-power generators. 0.5 КТ-1 Bipolar DIP n-base 300мВт 100 pieces.
23069 ON SEMICONDUCTOR
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
1 DIP 5Вт 500pcs 3V3 do201
23070 ON SEMICONDUCTOR
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
1 DIP 5Вт 500pcs 3V9 do201
23071 ON SEMICONDUCTOR
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
1 DIP 5Вт 500pcs 4V7 do201
ON SEMICONDUCTOR
6.50 грн.
50+5,85 грн.
100+5,20 грн.
250+4,87 грн.
1 DIP 5Вт 500pcs 5V1 do201
ON SEMICONDUCTOR
6.60 грн.
50+5,94 грн.
100+5,28 грн.
250+4,95 грн.
1 DIP 5Вт 500pcs 5V6 do201
23076 ON SEMICONDUCTOR
4.50 грн.
50+4,05 грн.
100+3,60 грн.
250+3,37 грн.
1 DIP 5Вт 500pcs 9V1 do201
23077 MIC
4.70 грн.
50+4,23 грн.
100+3,76 грн.
250+3,52 грн.
1 DIP 5Вт 500pcs 10V do201
ON SEMICONDUCTOR
6.70 грн.
50+6,03 грн.
100+5,36 грн.
250+5,02 грн.
1 DIP 5Вт 500pcs 11V do201
ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 13V do201
23079 ON SEMICONDUCTOR
4.50 грн.
50+4,05 грн.
100+3,60 грн.
250+3,37 грн.
1 DIP 5Вт 500pcs 15V do201
ON SEMICONDUCTOR
5.30 грн.
50+4,77 грн.
100+4,24 грн.
250+3,97 грн.
1 DIP 5Вт 500pcs 14V do201
23080 ON SEMICONDUCTOR
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 16V do201
23081 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 18V do201
23082 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 20V do201
23084 ON SEMICONDUCTOR
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
1 DIP 5Вт 500pcs 24V do201