Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Stabilization voltage Zener diode housing type Breakdown voltage Diode design
VISHAY
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 170V
VISHAY
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 170V
VISHAY
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 180V
VISHAY
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 180V
23391 VISHAY
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 200V
23392 Taychipst
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 200V
Taychipst
3 грн.
10+2,85 грн.
30+2,70 грн.
50+2,40 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 220V
23398 VISHAY
3.50 грн.
10+3,32 грн.
30+3,15 грн.
50+2,80 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 350V
25882 VISHAY
4 грн.
10+3,80 грн.
30+3,60 грн.
50+3,20 грн.
0.4 DIP DO-15 Protective 600Вт 1000pcs 400V
23419 MIC
0.50 грн.
100+0,45 грн.
200+0,40 грн.
500+0,35 грн.
0.34 DIP R-1 1000V 1A Rectifier 1000pcs single
23442 INTERNATIONAL RECTIFIER
17 грн.
100+15,30 грн.
200+13,60 грн.
500+11,90 грн.
0.5 SMD DPAK;TO-252 100V 12A Schottky 3000pcs double common cathode
23473 СНГ
14 грн.
10+13,30 грн.
50+12,60 грн.
100+11,20 грн.
KR142EN18B microcircuits are adjustable voltage regulators of negative polarity with an output voltage of 1.2-6.5 V and a load current of up to 1.5 A. 2.5 TO-220 DIP Nutrition 100 pieces.
23477 СНГ
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
8-bit register on D-flip-flops with a common reset input. 1.3 DIP20 DIP Logics 70pcs
23480 INTEGRAL
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
KP959A silicon key epitaxial-planar transistors with a vertical n-type channel with static induction are designed for use in high-frequency power supply circuits and other high-speed key circuits of electronic equipment. 0.6 TO126 Field DIP MOS n-channel 220В 200мА 7Вт 100 pieces.
23488 СНГ
27 грн.
10+25,65 грн.
50+24,30 грн.
100+21,60 грн.
Transistors KP350V are silicon diffuse-planar field-effect transistors with two insulated gates and an n-type channel. Designed for use in amplifiers, generators and microwave converters up to 700 MHz. 0.4 КТ-1 Field DIP MOS n-channel 200мВт 100 pieces.
23494 TEXAS INSTRUMENTS
17 грн.
10+16,15 грн.
50+15,30 грн.
100+13,60 грн.
1.2 DIP16 DIP Logics 25pcs
23495 MPN
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
Two four-channel shapers with three output states. 1.6 DIP20 DIP Logics 18 pcs.
23496 PHILIPS
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.3 DIP 1.3Вт 5000pcs 12V DO-41
23498 СНГ
1.50 грн.
50+1,35 грн.
100+1,20 грн.
250+1,12 грн.
Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. 0.2 DIP 340мВт 500pcs 11V kd2
23505
12 грн.
The main technical parameters of the KV121A varicap: Sd min-Total capacitance minimum: 4.3 pF at Uobr 25 V; Sd max - Maximum total capacitance: 6 pF at Uobr 25 V; Qv-Quality factor of the varicap: 200; Iobr-Constant reverse current: 0.5 μA at Uobr 28 V; Uobr-Constant reverse voltage: 30 V; Operating temperature range: -40... +100 °С.
23507 TEXAS INSTRUMENTS
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
0.3 TO-92 DIP Nutrition 200pcs
23508 СНГ
64 грн.
10+60,80 грн.
50+57,60 грн.
100+51,20 грн.
Low-pass filter of the 2nd order according to the classical scheme on an emitter follower. 7.5 DIP Filters 10 pieces.
23509 СНГ
162 грн.
10+153,90 грн.
50+145,80 грн.
100+129,60 грн.
The KM1816BE48 microcircuit is a single-chip 8-bit microcomputer with PROM with UV erasure with a capacity of 8 kbit (1024x8). 5.7 DIP40 DIP Processors 5 pieces.
23510 СНГ
15 грн.
50+13,50 грн.
100+12 грн.
250+11,25 грн.
Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. 0.8 DIP 180мВт 100 pieces. 1V9 kd-8
23511 СНГ
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. 0.8 DIP 1Вт 100 pieces. 10V kd-8
23513 СНГ
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. 4.2 Screw 5Вт 100 pieces. 120V ks620
23524 СНГ
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
2 four-input NAND circuits with an open collector output and increased load capacity (display elements). 0.3 SO14 SMD Logics 100 pieces.
23525 СНГ
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 25В 20мА 200мВт 100 pieces.
23526 СНГ
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
KP307E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 КТ-1 Field DIP MOS n-channel 27В 25мА 250мВт 100 pieces.
23530 СНГ
75 грн.
10+71,25 грн.
50+67,50 грн.
100+60 грн.
Bipolar RAM is based on integral-injection logic. The 541PT1 chips are a one-time programmable read-only memory device with a capacity of 1 kbit (256 x 4). Input and output compatible with TTL circuits. The functional diagram includes address input circuits, a decoder, a multiplexer, control circuits, output circuits, and a 32 x 32 accumulator. 0.9 SO16 SMD Memory 25pcs