Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Appointment | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type |
|---|
Transistor KP350V Au
#11377
|
23488 | СНГ | — |
27 грн.
|
|
— | Transistors KP350V are silicon diffuse-planar field-effect transistors with two insulated gates and an n-type channel. Designed for use in amplifiers, generators and microwave converters up to 700 MHz. | 0.4 | — | КТ-1 | Field | DIP | — | MOS n-channel | — | — | 200мВт | 100 pieces. | — | — | — | — | — | — | |||||||
Chip SN74LS123N
#11383
|
23494 | TEXAS INSTRUMENTS | — |
17 грн.
|
|
— | 1.2 | DIP16 | — | — | DIP | Logics | — | — | — | — | 25pcs | — | — | — | — | — | — | ||||||||
Chip DM74LS244N (=K555AP5)
#11384
|
23495 | MPN | — |
12 грн.
|
|
— | Two four-channel shapers with three output states. | 1.6 | DIP20 | — | — | DIP | Logics | — | — | — | — | 18 pcs. | — | — | — | — | — | — | |||||||
Zener diode BZV85-C12V
#11385
|
23496 | PHILIPS | — |
2 грн.
|
|
— | 0.3 | — | — | — | DIP | — | — | — | — | 1.3Вт | 5000pcs | — | — | — | — | 12V | DO-41 | ||||||||
Zener diode D814G1
#11387
|
23498 | СНГ | — |
1.50 грн.
|
|
— | Zener diodes D814G1 silicon, medium power. Designed to stabilize the voltage of 10.0-12.0 V. Are issued in the glass case with flexible conclusions. | 0.2 | — | — | — | DIP | — | — | — | — | 340мВт | 500pcs | — | — | — | — | 11V | kd2 | |||||||
Varicap KV121AG set 4 pcs.
#11394
|
23505 | — | — |
12 грн.
|
— | The main technical parameters of the KV121A varicap: Sd min-Total capacitance minimum: 4.3 pF at Uobr 25 V; Sd max - Maximum total capacitance: 6 pF at Uobr 25 V; Qv-Quality factor of the varicap: 200; Iobr-Constant reverse current: 0.5 μA at Uobr 28 V; Uobr-Constant reverse voltage: 30 V; Operating temperature range: -40... +100 °С. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Chip UA78L05C
#11396
|
23507 | TEXAS INSTRUMENTS | — |
10 грн.
|
|
— | 0.3 | TO-92 | — | — | DIP | Nutrition | — | — | — | — | 200pcs | — | — | — | — | — | — | ||||||||
Microcircuit 298FN13
#11397
|
23508 | СНГ | — |
64 грн.
|
|
— | Low-pass filter of the 2nd order according to the classical scheme on an emitter follower. | 7.5 | — | — | — | DIP | Filters | — | — | — | — | 10 pieces. | — | — | — | — | — | — | |||||||
Chip KM1816BE48 Au
#11398
|
23509 | СНГ | — |
162 грн.
|
|
— | The KM1816BE48 microcircuit is a single-chip 8-bit microcomputer with PROM with UV erasure with a capacity of 8 kbit (1024x8). | 5.7 | DIP40 | — | — | DIP | Processors | — | — | — | — | 5 pieces. | — | — | — | — | — | — | |||||||
Zener diode 2S119A (=KS119A)
#11399
|
23510 | СНГ | — |
15 грн.
|
|
— | Main technical parameters of stabistor 2S119A: • Rated stabilization voltage: 1.9 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Differential resistance: 15 Ohm at Ist 10 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.18 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | DIP | — | — | — | — | 180мВт | 100 pieces. | — | — | — | — | 1V9 | kd-8 | |||||||
Zener diode 2S510A (=KS510A)
#11400
|
23511 | СНГ | — |
6 грн.
|
|
— | Zener diodes 2S510A silicon, planar, medium power. Designed to stabilize the rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | — | — | — | DIP | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 10V | kd-8 | |||||||
Zener diode 2S920A (=KS920A)
#11402
|
23513 | СНГ | — |
7 грн.
|
|
— | Zener diodes 2S920A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 120 V in the stabilization current range of 5...42 mA. | 4.2 | — | — | — | Screw | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 120V | ks620 | |||||||
Chip KM133LA7
#11407
|
23524 | СНГ | — |
8 грн.
|
|
— | 2 four-input NAND circuits with an open collector output and increased load capacity (display elements). | 0.3 | SO14 | — | — | SMD | Logics | — | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Transistor KP303E Ni
#11408
|
23525 | СНГ | — |
10 грн.
|
|
— | KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. | 0.4 | — | КТ-1 | Field | DIP | — | MOS n-channel | 25В | 20мА | 200мВт | 100 pieces. | — | — | — | — | — | — | |||||||
Transistor KP307E Au
#11409
|
23526 | СНГ | — |
22 грн.
|
|
— | KP307E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. | 0.4 | — | КТ-1 | Field | DIP | — | MOS n-channel | 27В | 25мА | 250мВт | 100 pieces. | — | — | — | — | — | — | |||||||
Chip 541PT1 Ni
#11413
|
23530 | СНГ | — |
75 грн.
|
|
— | Bipolar RAM is based on integral-injection logic. The 541PT1 chips are a one-time programmable read-only memory device with a capacity of 1 kbit (256 x 4). Input and output compatible with TTL circuits. The functional diagram includes address input circuits, a decoder, a multiplexer, control circuits, output circuits, and a 32 x 32 accumulator. | 0.9 | SO16 | — | — | SMD | Memory | — | — | — | — | 25pcs | — | — | — | — | — | — | |||||||
Zener diode KS107A stack.
#11418
|
23535 | СНГ | — |
1.50 грн.
|
|
— | • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С. | 0.2 | — | — | — | DIP | — | — | — | — | 125мВт | 300pcs | — | — | — | — | 0.7V | kd2 | |||||||
Zener diode KS582G
#11419
|
23536 | СНГ | — |
6 грн.
|
|
— | Silicon zener diodes, diffusion-alloy, medium power, precision. | 0.8 | — | — | — | DIP | — | — | — | — | 720мВт | 80pcs | — | — | — | — | 82V | — | |||||||
Zener diode KS630A
#11420
|
23537 | СНГ | — |
12 грн.
|
|
— | Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA. | 3 | — | — | — | Screw | — | — | — | — | 5Вт | 100 pieces. | — | — | — | — | 130V | ks620 | |||||||
Zener diode KS407G
#11426
|
23543 | СНГ | — |
2 грн.
|
|
— | Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С. | 0.1 | — | — | — | DIP | — | — | — | — | 500мВт | 400pcs | — | — | — | — | 5V1 | kd2 | |||||||
Thyristor KU202B
#11428
|
23545 | — | — |
20 грн.
|
— | Continuous maximum reverse voltage 25 V Continuous maximum off-state voltage 25 V Constant pulse current in the open state - 30 A Repetitive on-state surge current 10 A On-state voltage Non-triggering DC control voltage >=0.2 V DC off state Constant reverse current Latching direct current control Constant trigger voltage control Critical off-state slew rate 5 V/µs Turn-on time Shutdown time | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||
Transistor KT502B
#11433
|
23559 | СНГ | — |
5 грн.
|
|
— | Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 25В | 350мА | 5МГц | 240 | — | — | |||||||
Transistor KT502V
#11434
|
23560 | СНГ | — |
5 грн.
|
|
— | Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | |||||||
Transistor KT502G
#11435
|
23561 | СНГ | — |
5 грн.
|
|
— | Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | |||||||
Transistor KT502E
#11436
|
23562 | СНГ | — |
5 грн.
|
|
— | Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 80В | 350мА | 5МГц | 120 | — | — | |||||||
Transistor KT503V
#11438
|
23565 | СНГ | — |
5 грн.
|
|
— | Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | TO92 | Bipolar | DIP | — | NPN | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 120 | — | — | |||||||
Transistor KT503G
#11439
|
23566 | СНГ | — |
5 грн.
|
|
— | Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices. | 0.3 | — | TO92 | Bipolar | DIP | — | NPN | — | — | 350мВт | 1000pcs | 40В | 350мА | 5МГц | 240 | — | — | |||||||
Transistor KT209D
#11440
|
23567 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 60В | 350мА | — | 120 | — | — | ||||||||
Transistor KT209M
#11441
|
23568 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 60В | 350мА | — | 120 | — | — | ||||||||
Transistor KT209A
#11442
|
23569 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | PNP | — | — | 350мВт | 1000pcs | 25В | 350мА | — | 120 | — | — |