Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Structure	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type

Chip 541PT1 Ni

#11413

23530

СНГ

—

75 грн.

10+	71,25 грн.
50+	67,50 грн.
100+	60 грн.

—

Bipolar RAM is based on integral-injection logic. The 541PT1 chips are a one-time programmable read-only memory device with a capacity of 1 kbit (256 x 4). Input and output compatible with TTL circuits. The functional diagram includes address input circuits, a decoder, a multiplexer, control circuits, output circuits, and a 32 x 32 accumulator.

0.9

SO16

—

SMD

—

Memory

—

25pcs

—

Zener diode KS107A stack.

#11418

23535

СНГ

—

1.50 грн.

50+	1,35 грн.
100+	1,20 грн.
250+	1,12 грн.

—

• Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.3%/°С; • Minimum allowable stabilization current: 1 mA; • The maximum allowable stabilization current: 100 mA; • Working range of ambient temperature: -60... +125 °С.

0.2

—

DIP

—

125мВт

300pcs

—

0.7V

kd2

Zener diode KS582G

#11419

23536

СНГ

—

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

—

Silicon zener diodes, diffusion-alloy, medium power, precision.

0.8

—

DIP

—

720мВт

80pcs

—

82V

—

Zener diode KS630A

#11420

23537

СНГ

—

12 грн.

50+	10,80 грн.
100+	9,60 грн.
250+	9 грн.

—

Zener diodes KS630A silicon, diffusion-alloy, medium power. Designed to stabilize the rated voltage of 130 V in the stabilization current range of 5...38 mA.

—

Screw

—

5Вт

100 pieces.

—

130V

ks620

Zener diode KS407G

#11426

23543

СНГ

—

2 грн.

50+	1,80 грн.
100+	1,60 грн.
250+	1,50 грн.

—

Silicon zener diode, planar, medium power. The main technical parameters of the KS407G zener diode: • Rated stabilization voltage: 5.1 V at Ist 20 mA; • Stabilization voltage spread: 4.8... 5.4 V; • Zener diode differential resistance: 17 Ohm at Ist 20 mA; • Minimum allowable stabilization current: 1 mA; • Maximum allowable stabilization current: 59 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -40... +85 °С.

0.1

—

DIP

—

500мВт

400pcs

—

5V1

kd2

Thyristor KU202B

#11428

23545

—

20 грн.

—

Continuous maximum reverse voltage 25 V Continuous maximum off-state voltage 25 V Constant pulse current in the open state - 30 A Repetitive on-state surge current 10 A On-state voltage Non-triggering DC control voltage &gt;=0.2 V DC off state Constant reverse current Latching direct current control Constant trigger voltage control Critical off-state slew rate 5 V/µs Turn-on time Shutdown time

—

Transistor KT502B

#11433

23559

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT502B silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

25В

350мА

5МГц

240

—

Transistor KT502V

#11434

23560

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT502V silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

40В

350мА

5МГц

120

—

Transistor KT502G

#11435

23561

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT502G silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

40В

350мА

5МГц

240

—

Transistor KT502E

#11436

23562

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT502E silicon epitaxial-planar structures pnp universal. Designed for use in low-frequency amplifiers, operational, differential and pulse amplifiers, converters

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

80В

350мА

5МГц

120

—

Transistor KT503V

#11438

23565

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT503V silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices.

0.3

—

TO92

Bipolar

DIP

—

NPN

350мВт

1000pcs

40В

350мА

5МГц

120

—

Transistor KT503G

#11439

23566

СНГ

—

5 грн.

10+	4,75 грн.
50+	4,50 грн.
100+	4 грн.

—

Transistors KT503G silicon epitaxial-planar structures npn universal. Designed for use in low-frequency amplifiers, operational and differential amplifiers, converters, pulse devices.

0.3

—

TO92

Bipolar

DIP

—

NPN

350мВт

1000pcs

40В

350мА

5МГц

240

—

Transistor KT209D

#11440

23567

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

60В

350мА

—

120

—

Transistor KT209M

#11441

23568

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

60В

350мА

—

120

—

Transistor KT209A

#11442

23569

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

25В

350мА

—

120

—

Transistor KT209Zh

#11444

23572

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

45В

350мА

—

Transistor KT3102GM

#11445

23573

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

NPN

250мВт

1000pcs

20В

200мА

—

1000

—

Transistor KT209G

#11447

23575

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

350мВт

1000pcs

30В

350мА

—

Transistor BU508AFI

#11448

23576

ST MICROELECTRONICS

—

32 грн.

10+	30,40 грн.
50+	28,80 грн.
100+	25,60 грн.
500+	22,40 грн.

—

5.7

—

TO3P

Bipolar

DIP

—

NPN

50Вт

30pcs

1.5кВ

8А

—

Chip SN74LS10N

#11449

23579

TEXAS INSTRUMENTS

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

DIP14

—

DIP

—

Logics

—

25pcs

—

Chip 541PT2 Au

#11457

23587

СНГ

—

162 грн.

10+	153,90 грн.
50+	145,80 грн.
100+	129,60 грн.

—

Read-only memory with the possibility of one-time programming with an information capacity of 16Kbps (2048 x 8 bits).

1.5

SO24

—

SMD

—

Memory

—

80pcs

—

Chip MAX3232CDR (=MAX3232C)

#11487

23623

TEXAS INSTRUMENTS

—

29 грн.

10+	27,55 грн.
50+	26,10 грн.
100+	23,20 грн.

—

0.4

SO16

—

SMD

—

Interfaces

—

2500pcs

—

Optocoupler TLP281-4GB

#11488

23624

TOSHIBA

—

43 грн.

10+	38,70 грн.
50+	34,40 грн.

—

0.4

SO16

—

SMD

—

2500pcs

—

Chip MIC29302WU TR

#11489

23625

MICROCHIP TECHNOLOGY

—

103 грн.

10+	97,85 грн.
50+	92,70 грн.
100+	82,40 грн.

—

2.5

TO263-5

—

SMD

—

Nutrition

—

1000pcs

—

Chip 88E6095-TAH1 A3P

#11490

23627

MARVELL

—

345 грн.

10+	327,75 грн.
50+	310,50 грн.
100+	276 грн.

—

2.5

QFP176

—

SMD

—

ethernet

—

60pcs

—

Chip BCM5347MA1KPBG

#11491

24730

BROADCOM

—

612 грн.

10+	581,40 грн.
50+	550,80 грн.
100+	489,60 грн.

—

9.2

BGA

—

SMD

—

ethernet

—

24pcs

—

Triac BTA08-600B

#11492

23631

ST MICROELECTRONICS

—

13 грн.

10+	11,70 грн.
50+	10,40 грн.

—

2.8

—

DIP

TO-220

600V

—

50pcs

—

Optocoupler LTV-357T

#11504

23738

Lite-On Semiconductor

—

6 грн.

10+	5,40 грн.
50+	4,80 грн.

—

0.3

Gull wing 4

—

SMD

—

3000pcs

—

7GE2A-K selenium stabistor

#11560

23797

СНГ

—

5 грн.

50+	4,50 грн.
100+	4 грн.
250+	3,75 грн.

—

7GE2A-K selenium stabistor Ust=1.3-1.6V, Ist.=1mA.

0.7

—

DIP

—

100 pieces.

—

1V45

—

Chip TX-2B

#11566

—

Silan Semiconductor

—

24 грн.

10+	22,80 грн.
50+	21,60 грн.
100+	19,20 грн.

—

DIP14(1.5-5V; 2mA) five function remote controller

DIP14

—

DIP

—

Microcontrollers

—

50pcs

—