Active radio components

Results: 8086

	MPN	Article	Brand	In stock	Price	Discounts	Quantity	Description	Weight g.	Type of shell	Transistor case type	Transistor type	Mounting type	Type of shell	Urev. max, V	Ipr. max.	Appointment	Diode type	Structure	Drain-source voltage	Drain current	Power	Factory packaging	Collector-emitter voltage	Collector current	Frequency	Current gain	Stabilization voltage	Zener diode housing type	Diode design

Chip MSP430F1121AIDW

#11567

30007

TEXAS INSTRUMENTS

—

32 грн.

10+	30,40 грн.
50+	28,80 грн.
100+	25,60 грн.

—

16-bit RISC mixed signal MK, DC...4.15/8MHz, 2KB+256x8 Flash, 256B RAM.

0.8

SO20

—

SMD

—

Microcontrollers

—

25pcs

—

Chip STM32F100C8T6B

#11568

30028

ST MICROELECTRONICS

—

65 грн.

10+	61,75 грн.
50+	58,50 грн.
100+	52 грн.

—

32-bit Microcontroller with 64KB,24MHz.

1.2

LQFP48

—

SMD

—

Microcontrollers

—

250pcs

—

Chip XC9536-15PC44C

#11569

30014

XILINX

—

40 грн.

10+	38 грн.
50+	36 грн.
100+	32 грн.

—

In-System Programmable CPLD, 15ns.

PLCC44

—

SMD

—

Memory

—

27pcs

—

Chip STM32F407VET6

#11570

30038

ST MICROELECTRONICS

—

198 грн.

10+	188,10 грн.
50+	178,20 грн.
100+	158,40 грн.

—

ARM Cortex-M4 32b MCU+FPU, 210DMIPS, up to 1MB Flash/192+4KB RAM, USB.

2.5

LQFP100

—

SMD

—

Microcontrollers

—

90pcs

—

Chip STM32F103C8T6

#11571

30009

ST MICROELECTRONICS

—

66 грн.

10+	62,70 грн.
50+	59,40 грн.
100+	52,80 грн.

—

32-bit Microcontroller with 64KB Flash, 72MHz.

0.9

LQFP48

—

SMD

—

Microcontrollers

—

250pcs

—

Chip TMS320VC5416PGE160

#11572

—

TEXAS INSTRUMENTS

—

1,236 грн.

10+	1 174,20 грн.
50+	1 112,40 грн.
100+	988,80 грн.

—

DSP, FIX PT, 160-MIPS, 144LQFP; Series:TMS320; DSP Type:Fixed Point; MMAC:160; Frequency, Core Type:160MHz; Memory Size, RAM:256KB; Memory, External Supported:Async; Interface Type:SPI; Voltage, Supply Min:2.7V; Voltage, Supply Max:3.6V; Termination Type:SMD; Case Style:LQFP; Pins, no. of:144; Temperature, Operating Range:-40°C to +100°C; BaseNumber:320; Frequency:160MHz; IC Generic Number:TMS320VC5416P.

4.5

LQFP144

—

SMD

—

Microcontrollers

—

60pcs

—

Chip UPD78F9116AC

#11573

30018

NEC

—

66 грн.

10+	62,70 грн.
50+	59,40 грн.
100+	52,80 грн.

—

DIP28

—

DIP

—

Microcontrollers

—

20pcs

—

Microwave diode AA112B

#11584

23815

СНГ

—

22 грн.

50+	19,80 грн.
200+	17,60 грн.
500+	15,40 грн.

—

Designed for use in frequency converters in the centimeter wavelength range as part of hybrid integrated circuits and microassemblies.

0.03

—

DIP

КД-1

—

Microwave

—

150мВт

50pcs

—

single

Chip KR142EN5A (7805) 5V

#11608

23834

СНГ

—

10 грн.

10+	9,50 грн.
50+	9 грн.
100+	8 грн.

—

The main characteristics of the chip KR142EN5A (KREN5A) Output voltage 5V Output current 1.5 A Maximum input voltage 15 V Voltage difference input-output 2.5 V Power dissipation (with heat sink) 10 W Output voltage accuracy ±0.2V Operating temperature range -45…+70 °C

2.8

TO-220

—

DIP

—

Nutrition

—

100 pieces.

—

Chip UPCZ-2

#11609

23835

СНГ

—

40 грн.

10+	38 грн.
50+	36 грн.
100+	32 грн.

—

UPCZ-2 - voltage amplifier of the intermediate frequency of sound 6.5 MHz. It is used in TVs, can be used as a complete sound IF unit, has electronic output sound control. It can be used by radio amateurs for a variety of circuit solutions for VHF FM receivers.

2.5

ZIP-9

—

DIP

—

Amplifiers

—

50pcs

—

Transistor KP303D Ni

#11617

23848

СНГ

—

11 грн.

10+	10,45 грн.
50+	9,90 грн.
100+	8,80 грн.

—

KP303D silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel.

0.4

—

КТ-1

Field

DIP

—

MOS n-channel

25В

20мА

200мВт

100 pieces.

—

Transistor KP303V Ni

#11618

23849

СНГ

—

11 грн.

10+	10,45 грн.
50+	9,90 грн.
100+	8,80 грн.

—

KP303V silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel.

0.4

—

КТ-1

Field

DIP

—

MOS n-channel

25В

20мА

200мВт

100 pieces.

—

Power diode D161-200-12

#11684

23913

СНГ

—

160 грн.

50+	144 грн.
200+	128 грн.
500+	112 грн.

—

D161-200-12 Diffusion silicon diode. It is intended for operation in circuits of static converters of electric power of direct and alternating currents at frequencies up to 2 kHz. They are produced in a ceramic-metal housing with a flexible lead, direct and reverse (with X sign) polarity. For diodes of direct polarity, the anode is the base of the case, reverse polarity is a flexible lead. Average direct current - 200 A Repetitive impulse reverse voltage - 1200 V Cooling air natural or forced.

270

—

DIP

—

1200V

200А

—

Rectifier

—

1 PC.

—

single

Transistor KT3107V

#11685

23914

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

—

300мВт

1000pcs

25В

200мА

200МГц

140

—

Diode column D1005A

#11690

23919

СНГ

—

25 грн.

50+	22,50 грн.
200+	20 грн.
500+	17,50 грн.

—

Pillar of silicon, alloy diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 1 kHz.

—

Screw

—

4kV

50mA

—

High voltage

—

24pcs

—

single

ТН-0,3-3 E10/13 neon lamp

#11745

23974

СНГ

—

10 грн.

10+	9 грн.
20+	8,50 грн.
50+	8 грн.

—

The neon lamp TN-0.3-3 is used as indicator, signal elements in various electrical and radio engineering devices.

2.5

—

DIP

—

100 pieces.

—

Chip 533KP15 Au

#11789

24018

СНГ

—

34 грн.

10+	32,30 грн.
50+	30,60 грн.
100+	27,20 грн.

—

Tristable 8-input selector-multiplexer.

0.7

SO16

—

SMD

—

Logics

—

30pcs

—

Transistor 2T625AM-2

#11805

24034

СНГ

—

28 грн.

10+	26,60 грн.
50+	25,20 грн.
100+	22,40 грн.

—

Transistors 2T625AM-2 silicon epitaxial-planar structures npn switching. Are intended for application in pulse devices of the pressurized equipment. Unpackaged with a protective coating and flexible leads.

1.6

—

Bipolar

SMD

—

NPN

—

1Вт

100 pieces.

40В

1А

200МГц

120

—

Transistor 2T331V-1

#11807

24036

СНГ

—

38 грн.

10+	36,10 грн.
50+	34,20 грн.
100+	30,40 грн.

—

Silicon epitaxial-planar npn frameless high-frequency transistors.

1.6

—

Bipolar

—

NPN

—

50pcs

—

180

—

Microcircuit 218GG1-N

#11811

224041

СНГ

—

22 грн.

10+	20,90 грн.
50+	19,80 грн.
100+	17,60 грн.

—

Self-oscillating multivibrator.

—

DIP

—

Logics

—

30pcs

—

Chip 129NT1B-1

#11814

24044

СНГ

—

7 грн.

10+	6,65 грн.
50+	6,30 грн.
100+	5,60 грн.

—

Differential pair of transistors.

2.5

—

SMD

—

Transistor Assembly

—

120pcs

—

Transistor P701

#11874

24126

СНГ

—

25 грн.

10+	23,75 грн.
50+	22,50 грн.
100+	20 грн.

—

Transistors P701 silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices.

—

Bipolar

DIP

—

NPN

—

10Вт

20pcs

40В

500мА

20МГц

—

Transistor KT3107G

#11876

24129

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

—

300мВт

1000pcs

25В

200мА

200МГц

220

—

Transistor KT3107L

#11877

24130

СНГ

—

3 грн.

10+	2,85 грн.
50+	2,70 грн.
100+	2,40 грн.

—

0.3

—

TO92

Bipolar

DIP

—

PNP

—

300мВт

1000pcs

20В

200мА

200МГц

800

—

Transistor P702

#11878

24131

СНГ

—

50 грн.

10+	47,50 грн.
50+	45 грн.
100+	40 грн.

—

Transistors P702 silicon mezaplanar structures npn amplifying. Designed for use in the output stages of low-frequency amplifiers, switching devices, converters and DC voltage stabilizers.

—

КТЮ-3-3

Bipolar

DIP

—

NPN

—

40Вт

20pcs

60В

2А

4МГц

—

Diode D226

#11880

24133

СНГ

—

6 грн.

50+	5,40 грн.
200+	4,80 грн.
500+	4,20 грн.

—

The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V.

—

DIP

—

400V

300mA

—

Rectifier

—

200pcs

—

single

Diode D104A

#11881

24134

СНГ

—

3 грн.

50+	2,70 грн.
200+	2,40 грн.
500+	2,10 грн.

—

The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V.

0.5

—

DIP

D104

100V

30mA

—

Pulse

—

100 pieces.

—

single

Diode KD522B

#11882

24135

СНГ

—

1 грн.

50+	0,90 грн.
200+	0,80 грн.
500+	0,70 грн.

—

The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF.

0.2

—

DIP

КД-2

50V

100mA

—

Pulse

—

500pcs

—

single

Zener diode D815G

#11883

24136

СНГ

—

6 грн.

50+	5,40 грн.
100+	4,80 грн.
250+	4,50 грн.

—

Medium power silicon zener diode, 10V The main technical parameters of the Zener diode D815G: • Stabilization voltage spread: 9... 11 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1.8 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 800 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С.

4.2

—

Screw

—

8Вт

100 pieces.

—

10V

ks620

—

Diode D303

#11884

24137

СНГ

—

10 грн.

50+	9 грн.
200+	8 грн.
500+	7 грн.

—

Diode germanium alloy.

10.5

—

Screw

—

150V

3.0A

—

Rectifier

—

30pcs

—

single