Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Diode column D1005A
#11690
|
23919 | СНГ | — |
25 грн.
|
|
— | Pillar of silicon, alloy diodes, rectifier. Designed to convert alternating voltage with a frequency of up to 1 kHz. | 34 | — | — | — | Screw | — | 4kV | 50mA | — | High voltage | — | — | — | — | 24pcs | — | — | — | — | — | — | single | |||||||
ТН-0,3-3 E10/13 neon lamp
#11745
|
23974 | СНГ | — |
10 грн.
|
|
— | The neon lamp TN-0.3-3 is used as indicator, signal elements in various electrical and radio engineering devices. | 2.5 | — | — | — | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
Chip 533KP15 Au
#11789
|
24018 | СНГ | — |
34 грн.
|
|
— | Tristable 8-input selector-multiplexer. | 0.7 | SO16 | — | — | SMD | — | — | — | Logics | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | |||||||
Transistor 2T625AM-2
#11805
|
24034 | СНГ | — |
28 грн.
|
|
— | Transistors 2T625AM-2 silicon epitaxial-planar structures npn switching. Are intended for application in pulse devices of the pressurized equipment. Unpackaged with a protective coating and flexible leads. | 1.6 | — | — | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 1Вт | 100 pieces. | 40В | 1А | 200МГц | 120 | — | — | — | |||||||
Transistor 2T331V-1
#11807
|
24036 | СНГ | — |
38 грн.
|
|
— | Silicon epitaxial-planar npn frameless high-frequency transistors. | 1.6 | — | — | Bipolar | — | — | — | — | — | — | NPN | — | — | — | 50pcs | — | — | — | 180 | — | — | — | |||||||
Microcircuit 218GG1-N
#11811
|
224041 | СНГ | — |
22 грн.
|
|
— | Self-oscillating multivibrator. | 3 | — | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 30pcs | — | — | — | — | — | — | — | |||||||
Chip 129NT1B-1
#11814
|
24044 | СНГ | — |
7 грн.
|
|
— | Differential pair of transistors. | 2.5 | — | — | — | SMD | — | — | — | Transistor Assembly | — | — | — | — | — | 120pcs | — | — | — | — | — | — | — | |||||||
Transistor P701
#11874
|
24126 | СНГ | — |
25 грн.
|
|
— | Transistors P701 silicon alloy-diffusion structures npn amplifying low-frequency. Designed for use in amplifiers and generators of radio electronic devices. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 10Вт | 20pcs | 40В | 500мА | 20МГц | 40 | — | — | — | |||||||
Transistor KT3107G
#11876
|
24129 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 1000pcs | 25В | 200мА | 200МГц | 220 | — | — | — | ||||||||
Transistor KT3107L
#11877
|
24130 | СНГ | — |
3 грн.
|
|
— | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 1000pcs | 20В | 200мА | 200МГц | 800 | — | — | — | ||||||||
Transistor P702
#11878
|
24131 | СНГ | — |
50 грн.
|
|
— | Transistors P702 silicon mezaplanar structures npn amplifying. Designed for use in the output stages of low-frequency amplifiers, switching devices, converters and DC voltage stabilizers. | 22 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 40Вт | 20pcs | 60В | 2А | 4МГц | 25 | — | — | — | |||||||
Diode D226
#11880
|
24133 | СНГ | — |
6 грн.
|
|
— | The main technical characteristics of the diode D226: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 300 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 400 V. | 2 | — | — | — | DIP | — | 400V | 300mA | — | Rectifier | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Diode D104A
#11881
|
24134 | СНГ | — |
3 грн.
|
|
— | The main technical characteristics of the D104A diode: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 1 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 0.3 V. | 0.5 | — | — | — | DIP | D104 | 100V | 30mA | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode KD522B
#11882
|
24135 | СНГ | — |
1 грн.
|
|
— | The main technical characteristics of the KD522B diode: • Uopp max - Maximum direct reverse voltage: 50 V; • Inp max - Maximum forward current: 100 mA; • Unp - DC forward voltage: no more than 1.1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 2 μA at Uobr 50 V; • tvoc arr - Reverse recovery time: 0.004 µs; • Sd - Total capacitance: 4 pF. | 0.2 | — | — | — | DIP | КД-2 | 50V | 100mA | — | Pulse | — | — | — | — | 500pcs | — | — | — | — | — | — | single | |||||||
Zener diode D815G
#11883
|
24136 | СНГ | — |
6 грн.
|
|
— | Medium power silicon zener diode, 10V The main technical parameters of the Zener diode D815G: • Stabilization voltage spread: 9... 11 V at Ist 500 mA; • Temperature coefficient of stabilization voltage: 0.08%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1.8 Ohm; • Minimum allowable stabilization current: 25 mA; • Maximum allowable stabilization current: 800 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Working range of ambient temperature: -60... +125 °С. | 4.2 | — | — | — | Screw | — | — | — | — | — | — | — | — | 8Вт | 100 pieces. | — | — | — | — | 10V | ks620 | — | |||||||
Diode D303
#11884
|
24137 | СНГ | — |
10 грн.
|
|
— | Diode germanium alloy. | 10.5 | — | — | — | Screw | — | 150V | 3.0A | — | Rectifier | — | — | — | — | 30pcs | — | — | — | — | — | — | single | |||||||
Diode D103A
#11888
|
24141 | СНГ | — |
3 грн.
|
|
— | Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | — | — | — | DIP | D104 | 30V | 30mA | — | High frequency | — | — | — | — | 200pcs | — | — | — | — | — | — | single | |||||||
Transistor P308
#11954
|
24243 | СНГ | — |
25 грн.
|
|
— | Transistors P308 silicon planar npn switching low-frequency low-power. Designed for use in switching circuits and DC voltage converters. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 250мВт | 100 pieces. | 120В | 30мА | 20МГц | 90 | — | — | — | |||||||
Transistor 2T602B (=KT602B)
#11955
|
24244 | СНГ | — |
25 грн.
|
|
— | KT602B Transistors silicon planar structures npn. Designed to generate and amplify signals. | 3.2 | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 2.8Вт | 100 pieces. | 100В | 75мА | 150МГц | 220 | — | — | — | |||||||
Transistor KT608B
#11956
|
24245 | СНГ | — |
20 грн.
|
|
— | Transistors KT608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 160 | — | — | — | |||||||
Transistor KT604AM
#11957
|
24246 | СНГ | — |
4 грн.
|
|
— | KT604AM Transistors silicon mezaplanarny structures npn. | 1 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 3Вт | 200pcs | 250В | 200мА | 40МГц | 40 | — | — | — | |||||||
Transistor KT639D
#11958
|
24247 | СНГ | — |
8 грн.
|
|
— | Designed for use in low-frequency amplifiers, power amplifiers, video amplifiers, automotive electronic devices, pulse and switching devices, in computer terminal devices. | 1 | — | TO126 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 1Вт | 100 pieces. | 60В | 1.5А | 80МГц | 160 | — | — | — | |||||||
Transistor KT611AM
#11959
|
24248 | СНГ | — |
6 грн.
|
|
— | KT611AM Transistors silicon mezaplanar structures npn amplifying. Designed for use in amplifiers and generators. | 1 | — | TO126 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 3Вт | 100 pieces. | 180В | 100мА | 60МГц | 40 | — | — | — | |||||||
Transistor 2T607A-4
#11960
|
24249 | СНГ | — |
160 грн.
|
|
— | Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. | 0.4 | — | — | Bipolar | SMD | — | — | — | — | — | NPN | — | — | 1.5Вт | 8pcs | 35В | 150мА | 0,7МГц | — | — | — | — | |||||||
Transistor 2P903V (=KP903V)
#11966
|
24255 | СНГ | — |
35 грн.
|
|
— | Transistors 2P903V are silicon epitaxial-planar field-effect transistors with an n-type channel and a gate in the form of a reverse-biased pn junction, high-frequency universal. | 4.5 | — | КТ-4-2 | Field | Screw | — | — | — | — | — | MOS n-channel | 20В | 700мА | 6Вт | 20pcs | — | — | — | — | — | — | — | |||||||
Power thyristor Т50-11-133
#11971
|
24260 | СНГ | — |
120 грн.
|
— | T50-11 thyristors are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz, as well as in semiconductor power converters, non-contact switching devices. | 180 | — | — | — | Cooler | — | 1100V | 50A | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | ||||||||
Diode D106
#11981
|
24270 | СНГ | — |
3 грн.
|
|
— | Microalloy, silicon, universal. Designed for use in AGC systems, discriminators, video amplifiers. | 0.3 | — | — | — | DIP | D104 | 30V | 30mA | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Modulator lamp GMI-6
#11983
|
24272 | — | — |
120 грн.
|
|
— | Pulse modulator double tetrode GMI-6 for operation in pulse modulators of stationary and mobile devices. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Lamp 6P45S
#11984
|
24273 | — | — |
200 грн.
|
|
— | Output beam tetrode. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Diode KD503B
#11986
|
24275 | СНГ | — |
2 грн.
|
|
— | Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | — | — | — | DIP | КД-121 | 30V | 20mA | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | — | single |