Active radio components

Results: 8086

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Type of shell Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Drain-source voltage Drain current Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain Stabilization voltage Zener diode housing type Diode design
Radio tube 6Zh4P
Radio tube 6Zh4P
#12157
 24450 СНГ —
28 грн.
10+25,20 грн.
20+23,80 грн.
50+22,40 грн.
 — 6ZH4P high frequency pentode. Designed to amplify high frequency voltage. 13 — — — DIP — — — — — — — — — — 100 pieces. — — — — — — —
Diode D214
Diode D214
#12160
 24452 СНГ —
25 грн.
50+22,50 грн.
200+20 грн.
500+17,50 грн.
 — Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. 13 — — — Screw КДЮ-11 100V 10A — — Rectifier — — — — 40pcs — — — — — — single
Transistor KP327A (=BF961)
Transistor KP327A (=BF961)
#12172
 24464 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — KP327A silicon planar transistor with two insulated gates protected by diodes and an n-type channel 0.3 — КТ-29 Field SMD — — — — — — MOS n-channel 14В 30мА 200мВт 100 pieces. — — — — — — —
Transistor FIR150N06P
Transistor FIR150N06P
#12214
 24591 First —
22 грн.
10+20,90 грн.
50+19,80 грн.
100+17,60 грн.
 — 2.5 — TO220 Field DIP — — — — — — MOS n-channel 60В 150А 220Вт 50pcs — — — — — — —
Thyristor KU202I
Thyristor KU202I
#12215
 24592 СНГ —
20 грн.
 — Silicon thyristors KU202I are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. 11 — — — Screw — 200V 10A — — — — — — — 40pcs — — — — — — —
Thyristor 2U201L (=KU201L)
Thyristor 2U201L (=KU201L)
#12217
 24594 СНГ —
15 грн.
 — The main technical parameters of the thyristor 2U201L: • Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 — — — Screw — 300V — 30A — — — — — — 40pcs — — — — — — —
Thyristor 2U201I (=KU201I)
Thyristor 2U201I (=KU201I)
#12218
 24595 СНГ —
20 грн.
 — The main technical parameters of the thyristor 2U201I: • Maximum DC reverse voltage: 200 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. 11 — — — Screw — 200V — 30A — — — — — — 40pcs — — — — — — —
Power thyristor Т25-7
Power thyristor Т25-7
#12222
 24601 СНГ —
90 грн.
 — T25-7 Thyristor low-frequency pin design. Thyristors T25-7 are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz. Are issued in the case with a flexible output. The maximum allowable average direct current in the open state - 25 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 700 V Cooling air natural or forced. The type designation is given on the case. Dimensions: - total length - 150 mm - hairpin length - 16 mm - thread - M10. 135 — — — Screw — 700V 25A — — — — — — — 1 PC. — — — — — — —
Diode D232A
Diode D232A
#12223
 24602 СНГ —
35 грн.
50+31,50 грн.
200+28 грн.
500+24,50 грн.
 — The main technical characteristics of the diode D232A: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 400 V. 11 — — — Screw КДЮ-11 400V 10A — — Rectifier — — — — 40pcs — — — — — — single
Diode 2D202D (=KD202D)
Diode 2D202D (=KD202D)
#12226
 24605 СНГ —
9 грн.
50+8,10 грн.
200+7,20 грн.
500+6,30 грн.
 — The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. 5 — — — Screw КДЮ-11 200V 5A — — Rectifier — — — — 100 pieces. — — — — — — single
Transistor 2T809A (=KT809A)
Transistor 2T809A (=KT809A)
#12230
 24609 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. 22 — КТЮ-3-3 Bipolar DIP — — — — — — NPN — — 40Вт 20pcs 400В 5А — 100 — — —
Transistor P210A
Transistor P210A
#12231
 24610 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15. 34 — — Bipolar DIP — — — — — — PNP — — 60Вт 10 pieces. 65В 12А — 15 — — —
Transistor KT816V
Transistor KT816V
#12237
 24616 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying. 0.7 — TO126 Bipolar DIP — — — — — — PNP — — 25Вт 200pcs 60В 3А 3МГц 25 — — —
Chip K574UD1B Au
Chip K574UD1B Au
#12238
 24618 СНГ —
60 грн.
10+57 грн.
50+54 грн.
100+48 грн.
 — K574UD1B The microcircuits are manufactured using combined bipolar field technology (BIFET). Chips K574UD1B are a high-speed operational amplifier with a large input impedance. Designed to build sample-and-hold circuits, high-resistance broadband amplifiers and comparators, broadband oscillators with high output voltage. They do not have an internal correction frequency. 1 — — — DIP — — — — Amplifiers — — — — — 50pcs — — — — — — —
Zener diode D814D
Zener diode D814D
#12240
 24620 СНГ —
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
 — Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. 0.8 — — — DIP — — — — — — — — — 340мВт 200pcs — — — — 13V — —
Zener diode 2S133A (=KS133A)
Zener diode 2S133A (=KS133A)
#12241
 24621 СНГ —
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
 — Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. 0.8 — — — DIP — — — — — — — — — 300мВт 200pcs — — — — 3V3 — —
Zener diode 2S168A (=KS168A) met.
Zener diode 2S168A (=KS168A) met.
#12242
 24624 СНГ —
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
 — Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. 0.2 — — — DIP — — — — — — — — — 300мВт 500pcs — — — — 6V8 — —
Zener diode 2S156A OS(=KS156A)
Zener diode 2S156A OS(=KS156A)
#12243
 24625 СНГ —
40 грн.
50+36 грн.
100+32 грн.
250+30 грн.
 — Zener diodes 2S156A silicon, alloy, low power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...55 mA. Are issued in the glass case with flexible conclusions. 0.8 — — — DIP — — — — — — — — — 300мВт 100 pieces. — — — — 5V6 — —
Zener diode D818D
Zener diode D818D
#12244
 24626 СНГ —
20 грн.
50+18 грн.
100+16 грн.
250+15 грн.
 — The main technical parameters of the Zener diode D818D: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.002%/°C; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 — — — DIP — — — — — — — — — 300мВт 100 pieces. — — — — 9V kd-8 —
Chip K142EN6A (K16) Au
Chip K142EN6A (K16) Au
#12246
 27628 СНГ —
270 грн.
10+256,50 грн.
50+243 грн.
100+216 грн.
 — The K142EN6A microcircuit is a bipolar voltage regulator with a fixed output voltage of ±15 V and a load current of 200 mA. During operation, it is allowed to connect the load to any one or simultaneously to two inputs (channels) of the microcircuit. 2.5 — — — SMD — — — — Nutrition — — — — — 5 pieces. — — — — — — —
Transistor KT812V
Transistor KT812V
#12261
 24643 СНГ —
50 грн.
10+47,50 грн.
50+45 грн.
100+40 грн.
 — The main technical characteristics of the transistor KT812V: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 50 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 3 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 200 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 7 V; • Ik max - Maximum allowable DC collector current: 8 A; • Ik and max - The maximum allowable collector pulse current: 12 A; • Iкer - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. 16 — kt-9 Bipolar DIP — — — — — — NPN — — 50Вт 20pcs 200В 8А 3МГц 10 — — —
Thyristor KU202D1
Thyristor KU202D1
#12262
 24644 СНГ —
15 грн.
 — Silicon thyristors KU202D1 are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. 2.1 — — — DIP — 100V 10A — — — — — — — 50pcs — — — — — — —
Chip KR544UD1A
Chip KR544UD1A
#12263
 24645 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KR544UD1A microcircuits are operational differential amplifiers with high input resistance and low input currents, with internal frequency correction, which ensures stable operation in any negative feedback modes, including integrator and voltage follower modes. 0.5 DIP8 — — DIP — — — — Amplifiers — — — — — 200pcs — — — — — — —
Transistor KT940B
Transistor KT940B
#12264
 24646 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Silicon epitaxial-planar bipolar structure npn amplifying. 0.7 — TO126 Bipolar DIP — — — — — — NPN — — 10Вт 200pcs 250В 100мА 90МГц 25 — — —
Transistor KT817A
Transistor KT817A
#12265
 24647 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
 — Transistor KT817A silicon mesa-epitaxial-planar structure npn amplifying. 0.7 — TO126 Bipolar DIP — — — — — — NPN — — 25Вт 200pcs 40В 3А 3МГц 40 — — —
Transistor KT817V
Transistor KT817V
#12266
 24648 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
 — Transistor KT817V silicon mesa-epitaxial-planar structure npn amplifying. 0.7 — TO126 Bipolar DIP — — — — — — NPN — — 25Вт 200pcs 60В 3А 3МГц 40 — — —
Transistor KP303E Au
Transistor KP303E Au
#12267
 24649 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
 — KP303E silicon epitaxial-planar field-effect transistors with a gate based on a pn junction and an n-type channel. 0.4 — КТ-1 Field DIP — — — — — — MOS n-channel 25В 20мА 200мВт 100 pieces. — — — — — — —
Transistor KT3102A
Transistor KT3102A
#12269
 24651 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
 — The main technical characteristics of the transistor KT3102A: • Transistor structure: npn • Рк max - Constant power dissipation of the collector: 250 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 300 MHz; • Vkbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 50 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik max - Maximum allowable DC collector current: 100 mA; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 0.05 μA (50V); • h21e - Static current transfer coefficient of the transistor in the small signal mode for circuits with a common emitter: 100...250; • Sk - Collector junction capacitance: no more than 6 pF; • Ksh - Transistor noise figure: no more than 10 dB at a frequency of 1 kHz • tk - Time constant of the feedback circuit at high frequency: no more than 100 ps. 0.34 — КТ-1 — DIP — — — — — — NPN — — 250мВт 100 pieces. 50В 200мА 300МГц 250 — — —
Transistor P27
Transistor P27
#12270
 24652 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
 — Transistors P27 germanium alloyed pnp amplifying low-frequency with a normalized noise figure at a frequency of 1 kHz. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — — PNP — — 30мВт 100 pieces. 5В 6mA 1МГц 100 — — —
Transistor P28
Transistor P28
#12271
 24653 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
 — Transistors P28 - germanium, amplifying, low power low-frequency, with a normalized noise figure at a frequency of 1KHz, structures - pnp. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — — PNP — — 30мВт 100 pieces. 5В 6mA 5МГц 200 — — —