Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Diode design |
|---|
Diode D103A
#11888
|
24141 | СНГ | — |
3 грн.
|
|
— | Diodes silicon D103A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | — | — | DIP | D104 | 30V | 30mA | — | — | High frequency | — | — | — | — | 200pcs | — | — | — | — | — | single | |||||||
Transistor P308
#11954
|
24243 | СНГ | — |
25 грн.
|
|
— | Transistors P308 silicon planar npn switching low-frequency low-power. Designed for use in switching circuits and DC voltage converters. | 1.5 | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 250мВт | 100 pieces. | 120В | 30мА | 20МГц | 90 | — | — | |||||||
Transistor 2T602B (=KT602B)
#11955
|
24244 | СНГ | — |
25 грн.
|
|
— | KT602B Transistors silicon planar structures npn. Designed to generate and amplify signals. | 3.2 | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 2.8Вт | 100 pieces. | 100В | 75мА | 150МГц | 220 | — | — | |||||||
Transistor KT608B
#11956
|
24245 | СНГ | — |
20 грн.
|
|
— | Transistors KT608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. | 1.5 | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 160 | — | — | |||||||
Transistor KT604AM
#11957
|
24246 | СНГ | — |
4 грн.
|
|
— | KT604AM Transistors silicon mezaplanarny structures npn. | 1 | TO126 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 3Вт | 200pcs | 250В | 200мА | 40МГц | 40 | — | — | |||||||
Transistor KT639D
#11958
|
24247 | СНГ | — |
8 грн.
|
|
— | Designed for use in low-frequency amplifiers, power amplifiers, video amplifiers, automotive electronic devices, pulse and switching devices, in computer terminal devices. | 1 | TO126 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 1Вт | 100 pieces. | 60В | 1.5А | 80МГц | 160 | — | — | |||||||
Transistor KT611AM
#11959
|
24248 | СНГ | — |
6 грн.
|
|
— | KT611AM Transistors silicon mezaplanar structures npn amplifying. Designed for use in amplifiers and generators. | 1 | TO126 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 3Вт | 100 pieces. | 180В | 100мА | 60МГц | 40 | — | — | |||||||
Transistor 2T607A-4
#11960
|
24249 | СНГ | — |
160 грн.
|
|
— | Transistors 2T607A-4 silicon epitaxial-planar structures npn generator. Designed for use in generators and amplifiers in sealed equipment. | 0.4 | — | Bipolar | SMD | — | — | — | — | — | — | NPN | — | — | 1.5Вт | 8pcs | 35В | 150мА | 0,7МГц | — | — | — | |||||||
Transistor 2P903V (=KP903V)
#11966
|
24255 | СНГ | — |
35 грн.
|
|
— | Transistors 2P903V are silicon epitaxial-planar field-effect transistors with an n-type channel and a gate in the form of a reverse-biased pn junction, high-frequency universal. | 4.5 | КТ-4-2 | Field | Screw | — | — | — | — | — | — | MOS n-channel | 20В | 700мА | 6Вт | 20pcs | — | — | — | — | — | — | |||||||
Power thyristor Т50-11-133
#11971
|
24260 | СНГ | — |
120 грн.
|
— | T50-11 thyristors are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz, as well as in semiconductor power converters, non-contact switching devices. | 180 | — | — | Cooler | — | 1100V | 50A | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | ||||||||
Diode D106
#11981
|
24270 | СНГ | — |
3 грн.
|
|
— | Microalloy, silicon, universal. Designed for use in AGC systems, discriminators, video amplifiers. | 0.3 | — | — | DIP | D104 | 30V | 30mA | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | single | |||||||
Modulator lamp GMI-6
#11983
|
24272 | — | — |
120 грн.
|
|
— | Pulse modulator double tetrode GMI-6 for operation in pulse modulators of stationary and mobile devices. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Lamp 6P45S
#11984
|
24273 | — | — |
200 грн.
|
|
— | Output beam tetrode. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||
Diode KD503B
#11986
|
24275 | СНГ | — |
2 грн.
|
|
— | Designed for use as switching elements in high-speed impulse devices of the nanosecond range. Are issued in the glass case with flexible conclusions. | 0.25 | — | — | DIP | КД-121 | 30V | 20mA | — | — | Pulse | — | — | — | — | 100 pieces. | — | — | — | — | — | single | |||||||
Radio tube 6Zh4P
#12157
|
24450 | СНГ | — |
28 грн.
|
|
— | 6ZH4P high frequency pentode. Designed to amplify high frequency voltage. | 13 | — | — | DIP | — | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
Diode D214
#12160
|
24452 | СНГ | — |
25 грн.
|
|
— | Diodes D214 silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | — | — | Screw | КДЮ-11 | 100V | 10A | — | — | Rectifier | — | — | — | — | 40pcs | — | — | — | — | — | single | |||||||
Transistor KP327A (=BF961)
#12172
|
24464 | СНГ | — |
12 грн.
|
|
— | KP327A silicon planar transistor with two insulated gates protected by diodes and an n-type channel | 0.3 | КТ-29 | Field | SMD | — | — | — | — | — | — | MOS n-channel | 14В | 30мА | 200мВт | 100 pieces. | — | — | — | — | — | — | |||||||
Transistor FIR150N06P
#12214
|
24591 | First | — |
22 грн.
|
|
— | 2.5 | TO220 | Field | DIP | — | — | — | — | — | — | MOS n-channel | 60В | 150А | 220Вт | 50pcs | — | — | — | — | — | — | ||||||||
Thyristor KU202I
#12215
|
24592 | СНГ | — |
20 грн.
|
— | Silicon thyristors KU202I are planar-diffusion, pnpn structures, triode, non-lockable. Designed for use as switching elements of voltage switching devices by small control signals. Are issued in the glass-to-metal case with rigid conclusions. | 11 | — | — | Screw | — | 200V | 10A | — | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor 2U201L (=KU201L)
#12217
|
24594 | СНГ | — |
15 грн.
|
— | The main technical parameters of the thyristor 2U201L: • Maximum DC reverse voltage: 300 V; • Maximum DC voltage in closed state: 300 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | Screw | — | 300V | — | 30A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Thyristor 2U201I (=KU201I)
#12218
|
24595 | СНГ | — |
20 грн.
|
— | The main technical parameters of the thyristor 2U201I: • Maximum DC reverse voltage: 200 V; • Maximum DC voltage in closed state: 200 V; • Maximum repetitive pulse current in the open state: 30 A; • Repetitive pulse current in the open state: 2 A; • Open state voltage: 2 V; • Direct current in the closed state: no more than 5 mA; • Constant reverse current: no more than 5 mA; • Unlocking direct control current: no more than 100 mA; • Constant unlocking control voltage: no more than 6 V; • Voltage slew rate in closed state: 5 V/µs; • Turn-on time: no more than 10 microseconds; • Turn-off time: no more than 100 microseconds; • Working range of ambient temperature: -60... +125 °С. | 11 | — | — | Screw | — | 200V | — | 30A | — | — | — | — | — | — | 40pcs | — | — | — | — | — | — | ||||||||
Power thyristor Т25-7
#12222
|
24601 | СНГ | — |
90 грн.
|
— | T25-7 Thyristor low-frequency pin design. Thyristors T25-7 are designed to operate in DC and AC circuits of various power electrical installations with a frequency of up to 500 Hz. Are issued in the case with a flexible output. The maximum allowable average direct current in the open state - 25 A Repetitive impulse voltage in the closed state and repetitive impulse reverse voltage - 700 V Cooling air natural or forced. The type designation is given on the case. Dimensions: - total length - 150 mm - hairpin length - 16 mm - thread - M10. | 135 | — | — | Screw | — | 700V | 25A | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | ||||||||
Diode 2D202D (=KD202D)
#12226
|
24605 | СНГ | — |
9 грн.
|
|
— | The main technical characteristics of the diode 2D202D: • Uobr and max - Maximum impulse reverse voltage: 200 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.2 kHz; • Unp - DC forward voltage: no more than 0.9 V at Inp 5 A; • Iobr - Constant reverse current: no more than 800 µA at Uobr 200 V. | 5 | — | — | Screw | КДЮ-11 | 200V | 5A | — | — | Rectifier | — | — | — | — | 100 pieces. | — | — | — | — | — | single | |||||||
Transistor 2T809A (=KT809A)
#12230
|
24609 | СНГ | — |
60 грн.
|
|
— | The main technical characteristics of the transistor 2T809A: • Transistor structure: npn; • Рк t max - Constant power dissipation of the collector with a heat sink: 40 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 5.1 MHz; • Uкer max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 400 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 4 V; • Ik max - Maximum allowable DC collector current: 3 A; • Ik and max - The maximum allowable collector pulse current: 5 A; • Iкеr - Collector-emitter reverse current at given collector-emitter reverse voltage and resistance in the base-emitter circuit: 3 mA (400 V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 15... 100; • Sk - Collector junction capacitance: no more than 270 pF; • Rke us - Saturation resistance between collector and emitter: no more than 0.75 Ohm. | 22 | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | — | NPN | — | — | 40Вт | 20pcs | 400В | 5А | — | 100 | — | — | |||||||
Transistor P210A
#12231
|
24610 | СНГ | — |
60 грн.
|
|
— | The main technical characteristics of the P210A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 60 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukeo samples - Breakdown voltage collector-emitter at a given collector current and base open circuit: 65 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 25 V; • Ik max - Maximum allowable DC collector current: 12 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 8 mA; • h21E - Static current transfer coefficient for a common emitter circuit in large signal mode: more than 15. | 34 | — | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 60Вт | 10 pieces. | 65В | 12А | — | 15 | — | — | |||||||
Transistor KT816V
#12237
|
24616 | СНГ | — |
12 грн.
|
|
— | Transistor KT816V silicon mesaepitaxial-planar structure pnp amplifying. | 0.7 | TO126 | Bipolar | DIP | — | — | — | — | — | — | PNP | — | — | 25Вт | 200pcs | 60В | 3А | 3МГц | 25 | — | — | |||||||
Chip K574UD1B Au
#12238
|
24618 | СНГ | — |
60 грн.
|
|
— | K574UD1B The microcircuits are manufactured using combined bipolar field technology (BIFET). Chips K574UD1B are a high-speed operational amplifier with a large input impedance. Designed to build sample-and-hold circuits, high-resistance broadband amplifiers and comparators, broadband oscillators with high output voltage. They do not have an internal correction frequency. | 1 | — | — | DIP | — | — | — | — | Amplifiers | — | — | — | — | — | 50pcs | — | — | — | — | — | — | |||||||
Zener diode D814D
#12240
|
24620 | СНГ | — |
3 грн.
|
|
— | Zener diodes D814D silicon, alloy, medium power. Designed to stabilize the voltage of 11.5-14.0 V in the stabilization current range of 3...24 mA. Are issued in the glass-to-metal case with flexible conclusions. The type of zener diode is given on the housing. | 0.8 | — | — | DIP | — | — | — | — | — | — | — | — | — | 340мВт | 200pcs | — | — | — | — | 13V | — | |||||||
Zener diode 2S133A (=KS133A)
#12241
|
24621 | СНГ | — |
6 грн.
|
|
— | Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. | 0.8 | — | — | DIP | — | — | — | — | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | 3V3 | — | |||||||
| 24624 | СНГ | — |
4 грн.
|
|
— | Zener diodes 2S168A silicon, alloy, low power. Designed to stabilize the nominal voltage of 6.8 V in the stabilization current range of 3...45 mA. | 0.2 | — | — | DIP | — | — | — | — | — | — | — | — | — | 300мВт | 500pcs | — | — | — | — | 6V8 | — |
