Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Drain-source voltage | Drain current | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Breakdown voltage | Diode design |
|---|
Transistor 2SK2370 (=K2370)
#12598
|
24156 | NEC | — |
46 грн.
|
|
— | 5.7 | — | TO3P | Field | DIP | — | — | — | — | — | MOS n-channel | 500В | 20А | 140Вт | 30pcs | — | — | — | — | — | — | ||||||||
Transistor SVF3878PN (=3878)
#12599
|
24153 | Silan Semiconductor | — |
45 грн.
|
|
— | 5.7 | — | TO3P | Field | DIP | — | — | — | — | — | MOS n-channel | 900В | 9А | 150Вт | 30pcs | — | — | — | — | — | — | ||||||||
Diode MUR3020WT
#12600
|
24152 | ON SEMICONDUCTOR | — |
40 грн.
|
|
— | 6.5 | — | — | — | DIP | TO-247 | 200V | 2x15A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | double common cathode | ||||||||
Diode STTH3003CW
#12601
|
24151 | ST MICROELECTRONICS | — |
72 грн.
|
|
— | 4.5 | — | — | — | DIP | TO-247 | 300V | 2x15A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | double common cathode | ||||||||
Diode RHRG30120
#12602
|
24150 | ON SEMICONDUCTOR | — |
48 грн.
|
|
— | 5 | — | — | — | DIP | TO247-2 | 1200V | 30A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | single | ||||||||
Diode STTH6012W
#12603
|
24149 | ST MICROELECTRONICS | — |
120 грн.
|
|
— | 5 | — | — | — | DIP | TO247-2 | 1200V | 60A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | single | ||||||||
| 24089 | FAIRCHILD SEMICONDUCTOR | — |
54 грн.
|
|
— | 5 | — | — | — | DIP | TO-3P | 300V | 2x30A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | double common cathode | |||||||||
| 24090 | FAIRCHILD SEMICONDUCTOR | — |
48 грн.
|
|
— | 5 | — | — | — | DIP | TO-3P | 600V | 2x15A | — | Fast | — | — | — | — | 30pcs | — | — | — | — | — | double common cathode | |||||||||
Chip K174XA34
#12621
|
24927 | СНГ | — |
28 грн.
|
|
— | FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals. | 1.1 | DIP16 | — | — | DIP | — | — | — | radio reception | — | — | — | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip KS561ID1
#12622
|
24935 | СНГ | — |
5 грн.
|
|
— | Binary Decimal Decoder. | 1.3 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip TDA7021
#12623
|
24940 | СНГ | — |
36 грн.
|
|
— | FM path of the radio receiver for receiving and processing signals with frequency modulation of the VHF range, as well as amplifying low-frequency signals. | 1.2 | DIP16 | — | — | DIP | — | — | — | radio reception | — | — | — | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip A277D (=K1003PP1)
#12624
|
24941 | Telefunken | — |
30 грн.
|
|
— | Designed to indicate the signal level on the LED lines. | 1.2 | DIP18 | — | — | DIP | — | — | — | Drivers | — | — | — | — | — | 25pcs | — | — | — | — | — | — | |||||||
Transistor BSP17
#12627
|
24949 | PHILIPS | — |
12 грн.
|
|
— | 0.3 | — | SOT223 | Field | SMD | — | — | — | — | — | MOS n-channel | 50В | 3.2А | 1.8Вт | 1000pcs | — | — | — | — | — | — | ||||||||
Diode MUR1660AC
#12639
|
24991 | HKZ | — |
16 грн.
|
|
— | TO220-2pin(16A; 600V; 35ns). | 2.5 | — | — | — | DIP | TO-220 | 600V | 16A | — | Fast | — | — | — | — | 50pcs | — | — | — | — | — | single | |||||||
Diode SF28
#12641
|
24994 | MIC | — |
1 грн.
|
|
— | 0.3 | — | — | — | DIP | DO-15 | 600V | 2A | — | Fast | — | — | — | — | 500pcs | — | — | — | — | — | single | ||||||||
Transistor 2T312V (=KT312V)
#12642
|
24998 | СНГ | — |
15 грн.
|
|
— | Transistors 2T312V silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 225мВт | 200pcs | 30В | 30мА | 120МГц | 250 | — | — | |||||||
Transistor 2T312A (=KT312A)
#12643
|
24999 | СНГ | — |
12 грн.
|
|
— | Transistors 2T312A silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 225мВт | 200pcs | 30В | 30мА | 80МГц | 100 | — | — | |||||||
Transistor 2T312B (=KT312B)
#12644
|
25000 | СНГ | — |
14 грн.
|
|
— | Transistors 2T312B silicon epitaxial-planar structures npn universal. Designed for use in switching devices, amplifiers and generators. | 0.6 | — | КТЮ-3-1 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 225мВт | 200pcs | 30В | 30мА | 120МГц | 100 | — | — | |||||||
| 25001 | СНГ | — |
52 грн.
|
|
— | Transistors 2T608A silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulsed and high-frequency devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 80 | — | — | ||||||||
Transistor 2T313A (=KT313A)
#12646
|
25002 | СНГ | — |
12 грн.
|
|
— | Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. | 0.4 | — | КТ-1-7 | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 300мВт | 100 pieces. | 50В | 350мА | 200МГц | 120 | — | — | |||||||
Transistor 1T311B (=GT311B)
#12648
|
25003 | СНГ | — |
14 грн.
|
|
— | Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | NPN | — | — | 150мВт | 100 pieces. | 12В | 50мА | 300МГц | 30 | — | — | |||||||
Phototransistor FT-1K gr.1
#12650
|
25005 | СНГ | — |
11 грн.
|
|
— | The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx. | 0.3 | — | — | Photo | DIP | — | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | |||||||
| 25007 | TOSHIBA | — |
342 грн.
|
|
— | 9.2 | SDIP64 | — | — | DIP | — | — | — | TV | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | |||||||||
Chip STM32F429VGT6
#12755
|
25111 | ST MICROELECTRONICS | — |
469 грн.
|
|
— | ARM® Cortex®-M4 STM32 F4 Microcontroller IC 32-Bit 180MHz 1MB (1M x 8) FLASH. | 2.5 | LQFP100 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | — | — | 90pcs | — | — | — | — | — | — | |||||||
Chip ST3232CDR (=ST3232C)
#12760
|
25116 | ST MICROELECTRONICS | — |
17 грн.
|
|
— | 0.4 | SO16 | — | — | SMD | — | — | — | Interfaces | — | — | — | — | — | 2000pcs | — | — | — | — | — | — | ||||||||
| 25118 | VISHAY | — |
3 грн.
|
|
— | 0.5 | — | — | — | SMD | SMB | — | — | — | Protective | — | — | — | 600Вт | 750pcs | — | — | — | — | 28V | single | |||||||||
Diode EC10QS04 (=S4)
#12763
|
25119 | Nihon | — |
1 грн.
|
|
— | 0.25 | — | — | — | SMD | SMA | 40V | 1A | — | Schottky | — | — | — | — | 2000pcs | — | — | — | — | — | single | ||||||||
Chip LPC1768FBD100
#12765
|
25122 | NXP | — |
216 грн.
|
|
— | 2.1 | LQFP100 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | — | — | 90pcs | — | — | — | — | — | — | ||||||||
| 25127 | PHILIPS | — |
216 грн.
|
|
— | Chip TDA9345PS/N3/3 (prod. Beko chassis E1). | 10 | SDIP64 | — | — | DIP | — | — | — | TV | — | — | — | — | — | 10 pieces. | — | — | — | — | — | — | ||||||||
| 25130 | СНГ | — |
20 грн.
|
|
— | Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | PNP | — | — | 3Вт | 40pcs | 40В | 1.5А | 30МГц | 120 | — | — |
