Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Breakdown voltage | Diode design |
|---|
Transistor 2T313A (=KT313A)
#12646
|
25002 | СНГ | — |
12 грн.
|
|
— | Transistors 2T313A silicon, epitaxial-planar structures pnp universal. Designed for use in high frequency amplifiers and switching devices. | 0.4 | — | КТ-1-7 | Bipolar | DIP | — | — | — | — | — | — | PNP | 300мВт | 100 pieces. | 50В | 350мА | 200МГц | 120 | — | — | — | |||||||
Transistor 1T311B (=GT311B)
#12648
|
25003 | СНГ | — |
14 грн.
|
|
— | Bipolar germanium transistor GT311B, npn, low power, ultrahigh frequency. | 1.2 | — | — | Bipolar | DIP | — | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 12В | 50мА | 300МГц | 30 | — | — | — | |||||||
Phototransistor FT-1K gr.1
#12650
|
25005 | СНГ | — |
11 грн.
|
|
— | The main technical parameters of the phototransistor FT-1K gr.1: • Photosensitive element size: diameter 1.8 mm; • Area of spectral photosensitivity: 0.5...1.12 microns; • Wavelength of maximum spectral distribution of photosensitivity: 0.8...0.9 µm; • Rated operating voltage: 5 V; • Dark current: no more than 3 mkA; • Current photosensitivity: not less than 0.4 µA/lx. | 0.3 | — | — | Photo | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||
| 25007 | TOSHIBA | — |
342 грн.
|
|
— | 9.2 | SDIP64 | — | — | DIP | — | — | — | — | TV | — | — | — | 10 pieces. | — | — | — | — | — | — | — | |||||||||
Chip STM32F429VGT6
#12755
|
25111 | ST MICROELECTRONICS | — |
469 грн.
|
|
— | ARM® Cortex®-M4 STM32 F4 Microcontroller IC 32-Bit 180MHz 1MB (1M x 8) FLASH. | 2.5 | LQFP100 | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 90pcs | — | — | — | — | — | — | — | |||||||
Chip ST3232CDR (=ST3232C)
#12760
|
25116 | ST MICROELECTRONICS | — |
17 грн.
|
|
— | 0.4 | SO16 | — | — | SMD | — | — | — | — | Interfaces | — | — | — | 2000pcs | — | — | — | — | — | — | — | ||||||||
| 25118 | VISHAY | — |
3 грн.
|
|
— | 0.5 | — | — | — | SMD | SMB | — | — | — | — | Protective | — | 600Вт | 750pcs | — | — | — | — | — | 28V | single | |||||||||
Diode EC10QS04 (=S4)
#12763
|
25119 | Nihon | — |
1 грн.
|
|
— | 0.25 | — | — | — | SMD | SMA | 40V | 1A | — | — | Schottky | — | — | 2000pcs | — | — | — | — | — | — | single | ||||||||
Chip LPC1768FBD100
#12765
|
25122 | NXP | — |
216 грн.
|
|
— | 2.1 | LQFP100 | — | — | SMD | — | — | — | — | Microcontrollers | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||
| 25127 | PHILIPS | — |
216 грн.
|
|
— | Chip TDA9345PS/N3/3 (prod. Beko chassis E1). | 10 | SDIP64 | — | — | DIP | — | — | — | — | TV | — | — | — | 10 pieces. | — | — | — | — | — | — | — | ||||||||
| 25130 | СНГ | — |
20 грн.
|
|
— | Transistor germanium structure pnp universal. Designed for use in amplifying, generator and pulse stages of low and high frequencies up to 30 MHz. | 10 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 3Вт | 40pcs | 40В | 1.5А | 30МГц | 120 | — | — | — | ||||||||
Transistor GT701A
#12774
|
25131 | СНГ | — |
40 грн.
|
|
— | Transistor GT701A germanium alloy structure pnp universal. Designed for use in ignition systems of internal combustion engines, as well as in voltage converters. | 22 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 50Вт | 20pcs | 100В | 12А | — | 75 | — | — | — | |||||||
Thyristor KU101G
#12775
|
25132 | СНГ | — |
10 грн.
|
— | The main technical parameters of the thyristor KU101G: • Maximum DC reverse voltage: 80 V; • Maximum DC voltage in closed state: 80 V; • Maximum repetitive pulse current in the open state: 1 A; • Average pulse current in the open state: 0.075 A; • Voltage in the open state: no more than 2.5 V; • Direct current in the closed state: not less than 0.15 mA; • Constant reverse current: no more than 0.15 mA; • Unlocking direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage slew rate in closed state: 100 V/µs; • Turn-on time: 2 ms; • Turn-off time: 35 µs. | 2 | — | — | — | DIP | — | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||
Microwave diode D605
#12776
|
25133 | СНГ | — |
40 грн.
|
|
— | Microwave diode D605 silicon, point, detector. It is intended for detection of pulsed amplitude-modulated signals, indication of pulsed power in the wave range 3.2..10cm. | 2.5 | — | — | — | DIP | — | — | — | — | — | Microwave | — | — | 10 pieces. | — | — | — | — | — | — | single | |||||||
Microwave diode D408
#12777
|
25134 | СНГ | — |
35 грн.
|
|
— | Diode D408 silicon point mixing. Designed for use in frequency converters in the wavelength range of 4.5..10 s. | 2.5 | — | — | — | DIP | — | — | — | — | — | Microwave | — | — | 10 pieces. | — | — | — | — | — | — | single | |||||||
Microwave diode 2A511A
#12778
|
25135 | СНГ | — |
90 грн.
|
|
— | The main technical parameters of the microwave diode 2A511A: • Total capacitance: 0.55...0.75 pF; • Forward loss resistance: no more than 2 ohms; • Accumulated diode charge: no more than 350 nC; • Constant reverse voltage: 50...200 V; • Constant forward current: 700 mA; • Value of admissible static potential: 100 V. | 0.3 | — | — | — | DIP | — | — | — | — | — | Microwave | — | — | 20pcs | — | — | — | — | — | — | single | |||||||
Microwave diode DK-V2
#12779
|
25136 | СНГ | — |
35 грн.
|
|
— | Microwave diodes DK-V2 silicon, point, detector. Designed to detect signals at a wavelength of 10 cm. | 0.5 | — | — | — | DIP | — | — | — | — | — | Microwave | — | — | 40pcs | — | — | — | — | — | — | single | |||||||
Diode 1D507A (=GD507A)
#12780
|
25137 | СНГ | — |
3 грн.
|
|
— | Diodes 1D507A germanium, microalloy, pulsed. Designed to limit and modulate pulse signals. The main technical characteristics of the diode 1D507A: • Uopp max - Maximum direct reverse voltage: 20 V; • Inp max - Maximum forward current: 16 mA; • Unp - DC forward voltage: no more than 0.5 V at Inp 5 mA; • Iobr - DC reverse current: no more than 50 µA at Uobr 20 V; • tvoc arr - Reverse recovery time: 0.1 µs; • Sd - Total capacitance: 0.8 pF. | 0.25 | — | — | — | DIP | КД-121 | 20V | 16mA | 200mA | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
Diode D311
#12781
|
25138 | СНГ | — |
3 грн.
|
|
— | Germanium, mesadiffusion, pulsed. | 0.3 | — | — | — | DIP | D104 | 30V | 40mA | — | — | Pulse | — | — | 100 pieces. | — | — | — | — | — | — | single | |||||||
| 25139 | СНГ | — |
6 грн.
|
|
— | Zener diodes 2S133A silicon, alloy, low power. Designed to stabilize the nominal voltage of 3.3 V in the stabilization current range of 3...81 mA. | 0.3 | — | — | — | DIP | — | — | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | 3V3 | — | — | ||||||||
Chip LM2902DG
#12808
|
25166 | ON SEMICONDUCTOR | — |
6 грн.
|
|
— | 0.4 | SO14 | — | — | SMD | — | — | — | — | Amplifiers | — | — | — | 1000pcs | — | — | — | — | — | — | — | ||||||||
Chip LA78045
#12809
|
25167 | SANYO | — |
18 грн.
|
|
— | 2.5 | TO-220-7 | — | — | DIP | — | — | — | — | TV | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
Chip LA78141
#12810
|
25168 | SANYO | — |
18 грн.
|
|
— | 2.5 | TO-220-7 | — | — | DIP | — | — | — | — | TV | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||
Chip LM2901D (=2901)
#12811
|
25169 | ST MICROELECTRONICS | — |
5 грн.
|
|
— | 0.4 | SO14 | — | — | SMD | — | — | — | — | Amplifiers | — | — | — | 60pcs | — | — | — | — | — | — | — | ||||||||
Chip LM2904D (=LM2904)
#12812
|
25171 | TEXAS INSTRUMENTS | — |
5 грн.
|
|
— | 0.4 | SO8 | — | — | SMD | — | — | — | — | Amplifiers | — | — | — | 1000pcs | — | — | — | — | — | — | — | ||||||||
Chip LM317LZ
#12813
|
25172 | WS | — |
4 грн.
|
|
— | 0.3 | TO-92 | — | — | DIP | — | — | — | — | Nutrition | — | — | — | 500pcs | — | — | — | — | — | — | — | ||||||||
Chip 88E1543-LKJ2
#12850
|
25202 | MARVELL | — |
198 грн.
|
|
— | Chip 88E1543-LKJ2 | 2 | QFP128 | — | — | SMD | — | — | — | — | ethernet | — | — | — | 72pcs | — | — | — | — | — | — | — | |||||||
Radio lamp 6S52N-V
#12952
|
25223 | СНГ | — |
80 грн.
|
|
— | 6C52H-B Subminiature ceramic-metal triode of increased reliability and mechanical strength. It is intended for amplification and generation of weak signals in devices of wide application. Indirectly heated oxide cathode. Works in any position. Durability not less than 5000 h. Weight no more than 3 g. Location of pins РШ8. | 3 | — | — | — | DIP | — | — | — | — | — | — | — | — | 20pcs | — | — | — | — | — | — | — | |||||||
Transistor 2T908A (=KT908A)
#12953
|
25224 | СНГ | — |
120 грн.
|
|
— | Transistors 2T908A silicon mezaplanar structures npn switching. Designed for use in stabilizers and voltage converters, pulse modulators. The body is metal with glass insulators and hard leads. | 22 | — | КТЮ-3-20 | Bipolar | DIP | — | — | — | — | — | — | NPN | 50Вт | 10 pieces. | 100В | 10А | 50МГц | 60 | — | — | — | |||||||
Transistor 1T305B (=GT305B)
#12954
|
25225 | СНГ | — |
8 грн.
|
|
— | Transistors 1T305B germanium diffusion-alloy structures pnp universal. | 0.4 | — | — | Bipolar | DIP | — | — | — | — | — | — | PNP | 75мВт | 100 pieces. | 15В | 6mA | 20МГц | 180 | — | — | — |
