Active radio components

Results: 8086

MPN Article Brand In stock Price Discounts Quantity Description Weight g. Type of shell Transistor case type Transistor type Mounting type Urev. max, V Ipr. max. Ipr. imp. max. Appointment Diode type Structure Power Factory packaging Collector-emitter voltage Collector current Frequency Current gain
25464 FAIRCHILD SEMICONDUCTOR —
24 грн.
10+22,80 грн.
50+21,60 грн.
100+19,20 грн.
500+16,80 грн.
— 7 — TO3 Bipolar DIP — — — — — NPN 130Вт 30pcs 400В 12А 4МГц 30
25534 CHINA —
3 грн.
— The GL5528 photoresistor is the simplest light sensor. Depending on the intensity of illumination, or rather on the intensity of the light incident on the sensor, the internal resistance of the photoresistor changes. 0.5 — — — — — — — — — — — 100 pieces. — — — —
25535 CHINA —
3 грн.
— The GL5537 photoresistor is the simplest light sensor. Depending on the intensity of illumination, or rather on the intensity of the light incident on the sensor, the internal resistance of the photoresistor changes. 0.5 — — — — — — — — — — — 100 pieces. — — — —
25536 CHINA —
3.50 грн.
— The GL5549 photoresistor is the simplest light sensor. Depending on the intensity of illumination, or rather on the intensity of the light incident on the sensor, the internal resistance of the photoresistor changes. 0.5 — — — — — — — — — — — 100 pieces. — — — —
25660 TEXAS INSTRUMENTS —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— 0.5 DIP8 — — DIP — — — Amplifiers — — — 50pcs — — — —
25671 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— The main technical characteristics of the transistor KT603B: • Transistor structure: npn; • Рк max - Constant power dissipation of the collector: 0.5 W; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 30 V (1 kOhm); • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 3 V; • Ik max - Maximum allowable DC collector current: 300 mA; • Ik and max - The maximum allowable collector pulse current: 600 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 10 µA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 60; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 7 ohms. 1.5 — КТЮ-3-3 Bipolar DIP — — — — — NPN 500мВт 100 pieces. 30В 300мА 200МГц 60
25672 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT321A germanium conversion structures pnp switching. Designed for use in switching devices. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 50В 200мА 60МГц 60
25675 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT322B germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — — — — — PNP 50мВт 100 pieces. 6В 10мА 80МГц 120
25676 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Transistors GT322V germanium diffusion-alloy structures pnp amplifying with a normalized noise figure. Designed for use in intermediate and high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — — — — — PNP 50мВт 100 pieces. 10В 10мА 50МГц 200
25677 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Transistors silicon epitaxial-planar structures npn universal. Designed for use in high frequency amplifiers. 0.5 — КТ-1-7 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 10В 50мА 600МГц 100
25679 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor germanium alloy npn amplifying low-frequency with non-standardized and normalized at a frequency of 1 kHz noise figure. Designed to amplify low frequency signals. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — NPN 150мВт 100 pieces. 15В 20мА 1МГц 45
25681 СНГ —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— Transistors MP40 germanium alloyed pnp amplifying low-frequency with non-normalized noise figure. Designed to amplify low frequency signals. Are issued in the glass-to-metal case with flexible conclusions. 1.8 — КТЮ-3-6 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 30В 30мА 1МГц 40
25682 СНГ —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Transistor MP20 germanium alloyed pnp switching low-frequency low-power. Designed for use in switching circuits. 1.8 — КТЮ-3-3 Bipolar DIP — — — — — PNP 150мВт 100 pieces. 30В 50мА 2МГц 150
25684 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
— 15-bit binary frequency divider. 1 DIP14 — — DIP — — — Logics — — — 100 pieces. — — — —
25685 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— shift register. 1.3 DIP16 — — DIP — — — Logics — — — 90pcs — — — —
25690 LITE-ON —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— 0.5 DIP8 — — DIP — — — Nutrition — — — 50pcs — — — —
25692 TITAN —
7 грн.
10+6,65 грн.
50+6,30 грн.
100+5,60 грн.
— Four-digit seven-segment I2C indicator driver. 0.4 SO16 — — SMD — — — Drivers — — — 2500pcs — — — —
25693 NXP —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Logic IC, 6 inverters. 0.3 SO14 — — DIP — — — Logics — — — 2500pcs — — — —
25694 NXP —
5 грн.
10+4,75 грн.
50+4,50 грн.
100+4 грн.
— 8-bit shift register with serial input, parallel output. 0.4 SO14 — — SMD — — — Logics — — — 2500pcs — — — —
25695 CHINA —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Chip touch sensor. 0.1 SOT23-6 — — SMD — — — Sensors — — — 3000pcs — — — —
25696 PAM —
6 грн.
10+5,70 грн.
50+5,40 грн.
100+4,80 грн.
— Microcircuit amplifier low frequency D-class 2x3 watts. 0.4 SO16 — — SMD — — — Amplifiers — — — 2500pcs — — — —
25720 LUGUANG ELECTRONIC —
1.50 грн.
10+1,35 грн.
50+1,20 грн.
100+1,12 грн.
— 0.3 — — — DIP 1000V 800mA 30A — Diode bridge — — 100 pieces. — — — —
25725 СНГ —
8 грн.
10+7,60 грн.
50+7,20 грн.
100+6,40 грн.
— Matrix of two npn transistors. 0.5 DIP8 — — DIP — — — Transistor Assembly — — — 200pcs — — — —
25727 СНГ —
25 грн.
10+23,75 грн.
50+22,50 грн.
100+20 грн.
— High-speed operational amplifier with high input impedance. 0.5 DIP8 — — DIP — — — Amplifiers — — — 200pcs — — — —
25728 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Universal four-digit decimal counter. 1.2 DIP16 — — DIP — — — Logics — — — 90pcs — — — —
25736 СНГ —
18 грн.
10+17,10 грн.
50+16,20 грн.
100+14,40 грн.
— 1024 bit (1024x1) static random access memory with control circuits. 1.2 DIP16 — — DIP — — — Memory — — — 90pcs — — — —
25739 СНГ —
20 грн.
10+19 грн.
50+18 грн.
100+16 грн.
— Voltage comparator. 1 DIP14 — — DIP — — — Logics — — — 100 pieces. — — — —
25740 СНГ —
15 грн.
10+14,25 грн.
50+13,50 грн.
100+12 грн.
— Four-phase pulse generator. 1 DIP14 — — DIP — — — Logics — — — 100 pieces. — — — —
25744 СНГ —
12 грн.
10+11,40 грн.
50+10,80 грн.
100+9,60 грн.
— Analog switch. 1 DIP14 — — DIP — — — ADC — — — 100 pieces. — — — —
25748 СНГ —
10 грн.
10+9,50 грн.
50+9 грн.
100+8 грн.
— Multifunctional differential amplifier. 1 DIP14 — — DIP — — — Amplifiers — — — 100 pieces. — — — —