Active radio components
- Diodes, bridges
- Thyristors, triacs
- zener diodes
- Microcircuits
- transistors
- Optocouplers
- Suppressors
- Sensors
- Varicaps
- radio tubes
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Type of shell | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Stabilization voltage | Zener diode housing type | Diode design |
|---|
Chip 249KN1A
#11335
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23441 | СНГ | 2 шт |
120 грн.
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Optoelectronic semiconductor microcircuits 249KN1A, consisting of optocouplers and transistor interrupters controlled by them. | 1.3 | — | — | — | DIP | — | — | — | Keys | — | — | — | 20pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT209K
#11443
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23571 | СНГ | 2 шт |
4 грн.
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0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 350мВт | 1000pcs | 45В | 350мА | — | 160 | — | — | — | |||||||||||
Kenotron VI1-15/32
#11644
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23874 | СНГ | 2 шт |
320 грн.
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High-voltage pulse kenotron. VI1-15/32 is designed to work in pulse circuits as a charging element. Anode cooling is natural. Cathode oxide, indirect heating. Glass decoration. | 180 | — | — | — | Clamp | — | — | — | — | — | — | — | 1 PC. | — | — | — | — | — | — | — | ||||||||||
Chip PX3.421.020 (04UP)
#11797
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24026 | СНГ | 2 шт |
280 грн.
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The microassembly is designed to correct distortions introduced by the cable into the transmission path of communication systems with pulse code modulation. | 16 | — | — | — | DIP | — | — | — | Telephony | — | — | — | 8pcs | — | — | — | — | — | — | — | ||||||||||
Microcircuit 218LN1
#11812
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24042 | СНГ | 2 шт |
47 грн.
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The logical element is NOT. | 2.1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 20pcs | — | — | — | — | — | — | — | ||||||||||
Transistor 1T321V (=GT321V)
#13543
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25674 | СНГ | 2 шт |
10 грн.
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Transistors 1T321V germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | ||||||||||
Chip TNY278GN
#13665
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25832 | Power Integrations | 2 шт |
26 грн.
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0.5 | SMD-8B | — | — | SMD | — | — | — | Nutrition | — | — | — | 50pcs | — | — | — | — | — | — | — | |||||||||||
Transistor GT321V
#13711
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25875 | СНГ | 2 шт |
10 грн.
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Transistors GT321V germanium conversion structures pnp switching. Designed for use in switching devices. | 1.8 | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | ||||||||||
Transistor KT352A
#13753
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25921 | INTEGRAL | 2 шт |
5 грн.
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The main technical characteristics of the transistor KT352A: • Transistor structure: pnp; • Рк max - Constant power dissipation of the collector: 300 mW; • fgr - Limiting frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 20 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and collector open circuit: 5 V; • Ik and max - The maximum allowable collector pulse current: 200 mA; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 μA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 25... 120; • Sk - Collector junction capacitance: no more than 15 pF; • Rke us - Saturation resistance between collector and emitter: no more than 3 ohms. | 0.3 | — | TO92 | Bipolar | DIP | — | — | — | — | — | PNP | 300мВт | 500pcs | 15В | 200мА | 200МГц | 120 | — | — | — | ||||||||||
Diode D248B
#13782
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25961 | СНГ | 2 шт |
30 грн.
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Diodes D248B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D248B: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 600 V. | 12 | — | — | — | Screw | — | 600V | 5A | — | Rectifier | — | — | 25pcs | — | — | — | — | — | — | single | ||||||||||
Diode KD206A
#14251
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26450 | СНГ | 2 шт |
25 грн.
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Diode KD206A silicon, mesa-diffusion, avalanche, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. The main technical characteristics of the KD206A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 400 V; • tvoc - Reverse recovery time: 10 µs. | 5.7 | — | — | — | Screw | КД-11 | 400V | 10A | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | single | ||||||||||
Chip K176IR4
#14315
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26518 | СНГ | 2 шт |
10 грн.
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Chip K176IR4 is a 64-bit serial shift register. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Chip K561PU4A
#14319
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26522 | СНГ | 2 шт |
5 грн.
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Six level converters. | 1.2 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 90pcs | — | — | — | — | — | — | — | ||||||||||
Diode bridge KTS403B
#14361
|
26573 | СНГ | 2 шт |
40 грн.
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Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | — | — | — | DIP | — | 500V | 1A | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
Diode bridge KTS403V
#14362
|
26574 | СНГ | 2 шт |
30 грн.
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Assembly of two single-phase diode bridges. Designed for rectifying alternating current with a frequency of up to 5 kHz. | 11 | — | — | — | DIP | — | 400V | 1A | — | Diode bridge | — | — | 100 pieces. | — | — | — | — | — | — | — | |||||||||||
Chip KR505RE3 0085
#14440
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26652 | СНГ | 2 шт |
10 грн.
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ROM (512 x 8, p-MOS). | 1.3 | SO24 | — | — | SMD | — | — | — | Memory | — | — | — | 140pcs | — | — | — | — | — | — | — | ||||||||||
Diode optocoupler OD301A
#14619
|
26835 | СНГ | 2 шт |
25 грн.
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OD301A diode differential optocoupler is designed to work as galvanic isolation elements when transmitting analog signals with a frequency of up to 100 kHz. Input voltage at an input current of 10 mA - no more than 1.5 V. Current transfer coefficient at an input current of 10 mA, an output reverse voltage of 5 V: - for the main optocoupler - not less than 1%; - for auxiliary optocoupler - not less than 0.5%. Optocoupler non-identity coefficient with input current from 4 mA to 20 mA, output reverse voltage of 5 V - no more than 2%. The cut-off frequency at the threshold for reducing Ki to the level of 0.7 is at least 100 kHz. Insulation resistance OD301A at a measured voltage of 500 V is at least 1 GΩ. Capacitance - no more than 2 pF. Input DC or average current at ambient temperature: - no more than +70° С - 20 mA; - +85° С - 10 mA. Input pulse current OD301A with a pulse duration of 100 μs - 100 mA. Input reverse voltage - 3.5 V. The output constant reverse voltage of the main and auxiliary optocouplers OD301A is 10 V. The output pulse reverse voltage with a pulse duration of 100 μs of the main and auxiliary optocouplers is 20 V. The isolation voltage of the main optocoupler OD301A is 500 V. The peak isolation voltage of the optocoupler at a pulse duration of 10 ms is 1000 V. Ambient temperature - from -60°С to +85°С. | 1.1 | — | — | — | DIP | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | ||||||||||
Transistor KT321G
#16477
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28726 | СНГ | 2 шт |
6 грн.
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KT321G silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 40В | 200мА | 60МГц | 60 | — | — | — | ||||||||||
Transistor KT321D
#16478
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28727 | СНГ | 2 шт |
6 грн.
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KT321D silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 40В | 200мА | 60МГц | 120 | — | — | — | ||||||||||
Transistor KT321E
#16479
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28728 | СНГ | 2 шт |
6 грн.
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KT321E silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 40В | 200мА | 60МГц | 200 | — | — | — | ||||||||||
Zener diode D818B
#16527
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28775 | СНГ | 2 шт |
4 грн.
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Main technical parameters of the D818B zener diode: - Rated stabilization voltage: 9 V at Ist 10 mA; - Stabilization voltage range: 7.2-9 V; - Temperature coefficient of stabilization voltage: -0.020-0%/°C; - Temporary instability of stabilization voltage: ± 0.13%; - Differential resistance of the zener diode: 18 Ohms at Ist 10 mA; - Minimum permissible stabilization current: 3 mA; - Maximum permissible stabilization current: 33 mA; - Maximum permissible power dissipation on the zener diode: 0.3 W; - Operating range of ambient temperature: -60-+125 °C | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 300мВт | 200pcs | — | — | — | — | 9V | kd-8 | — | ||||||||||
Zener diode 2S518A
#16533
|
28781 | СНГ | 2 шт |
12 грн.
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Main technical parameters of the 2S518A zener diode: • Rated stabilization voltage: 18 V at Ist 5 mA; • Stabilization voltage spread: 16.2... 19.8 V; • Temperature coefficient of stabilization voltage: 0.1%/°C; • Temporary instability of the zener diode stabilization voltage: ±1.5%; • Differential resistance of the zener diode: 200 Ohm at Ist 1 mA; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 45 mA; • Maximum permissible power dissipation on the zener diode: 1 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | DIP | — | — | — | — | — | — | 1Вт | 100 pieces. | — | — | — | — | 18V | kd-8 | — | ||||||||||
Transistor KT825G
#17110
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29359 | СНГ | 2 шт |
240 грн.
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Main technical characteristics of the KT825G transistor: • Transistor structure: p-n-p; • Рк т max - Continuous dissipated power of the collector with a heat sink: 125 W; • fгр - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: at least 4 MHz; • Uэбо max - Maximum emitter-base voltage at a given reverse emitter current and an open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 20 A; • Iк и max - Maximum permissible pulse collector current: 40 A; • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 750...18000; • Ск - Collector junction capacitance: no more than 600 pF; • Rke nat - Saturation resistance between collector and emitter: no more than 0.4 Ohm. | 16 | — | TO3 | Bipolar | DIP | — | — | — | — | — | PNP | 125Вт | 10 pieces. | 90В | 40А | — | 18000 | — | — | — | ||||||||||
Chip K561LP13
#722
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22133 | СНГ | 1 шт |
5 грн.
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Three three-input majority logic elements. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Chip K174UR11
#786
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21965 | СНГ | 1 шт |
10 грн.
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Intermediate frequency amplifier with pre-VLF and volume and tone controls. | 1.5 | DIP18 | — | — | DIP | — | — | — | TV | — | — | — | 80pcs | — | — | — | — | — | — | — | ||||||||||
Chip KR198NT5B
#879
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21427 | СНГ | 1 шт |
10 грн.
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Matrix of pnp transistors. | 1 | DIP14 | — | — | DIP | — | — | — | Transistor Assembly | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Chip K176LA7
#921
|
21875 | СНГ | 1 шт |
6 грн.
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4 logic elements 2I-HE. | 1 | DIP14 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
Chip KM155PR6
#936
|
21303 | СНГ | 1 шт |
5 грн.
|
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Integrated circuit of the TTL series. KM155PR6 microcircuits are a BCD-to-binary converter. Contain 640 integral elements. Housing type 238.16-2, weight no more than 2 g. Maximum permissible operating modes: - Supply voltage .......... 4.75 - 5.25 V - Low level input voltage .......... - High level input voltage .......... > 2.4V - Low level input current .......... - High level output current .......... - Load capacity .......... - The duration of the front and cut of the input pulse - Ambient temperature: - K155 .......... -10 + 70 °С - KM155 ......... - 45 + 85 ° С | 1 | DIP16 | — | — | DIP | — | — | — | Logics | — | — | — | 100 pieces. | — | — | — | — | — | — | — | ||||||||||
| 22881 | DIODES INCORPORATED | 1 шт |
6 грн.
|
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0.2 | — | SOT23 | Bipolar | SMD | — | — | — | — | — | NPN | 1Вт | 3000pcs | 12В | 6А | — | 800 | — | — | — | ||||||||||||
Chip ATmega128A-AU
#2729
|
20035 | ATMEL | 1 шт |
278 грн.
|
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8-bit Microcontroller with 128K Bytes In-System Programmable Flash. | 2.8 | TQFP64 | — | — | SMD | — | — | — | Microcontrollers | — | — | — | 90pcs | — | — | — | — | — | — | — |
