zener diodes

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MPN Article Brand In stock Price Discounts Quantity Description Weight g. Mounting type Power Factory packaging Stabilization voltage Zener diode housing type
20224 Rectron Semiconductor 160 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 13V 0.5W (BZX55C 13V) 0.12 DIP 500мВт 500pcs 13V DO-35
20225 Rectron Semiconductor 143 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 9.1V 0.5W (BZX55C 9V1) 0.12 DIP 500мВт 500pcs 9V1 DO-35
20211 Rectron Semiconductor 137 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 5.6V 0.5W (BZX55C 5V6) 0.12 DIP 500мВт 500pcs 5V6 DO-35
24627 СНГ 126 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. 0.8 DIP 300мВт 100 pieces. 9V kd-8
20217 Rectron Semiconductor 123 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 2.0V 0.5W (BZX55C 2V0) 0.12 DIP 500мВт 500pcs 2V0 DO-35
22385 СНГ 123 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Silicon zener diode, planar, low power. 0.2 DIP 125мВт 100 pieces. 22V kd2
20201 Rectron Semiconductor 106 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 3.0V 0.5W (BZX55C 3V0) 0.12 DIP 500мВт 500pcs 3V0 DO-35
20218 Rectron Semiconductor 103 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 15V 0.5W (BZX55C 15V) 0.12 DIP 500мВт 500pcs 15V DO-35
20220 Rectron Semiconductor 91 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 30V 0.5W (BZX55C 30V) 0.12 DIP 500мВт 500pcs 30V DO-35
21847 СНГ 82 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
Silicon zener diode, plenary, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 1...48 mA. 0.2 DIP 340мВт 200pcs 5V6 kd2
26196 СНГ 81 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Medium power silicon zener diode, 8.2V The main technical parameters of the Zener diode D815V: • Stabilization voltage spread: 7.4... 9.1 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.07%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1 ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 950 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С 2.5 Screw 8Вт 100 pieces. 8V2 ks620
23540 СНГ 75 шт
3.80 грн.
50+3,42 грн.
100+3,04 грн.
250+2,85 грн.
0.2 DIP 125мВт 500pcs 8V2 kd2
28532 ON SEMICONDUCTOR 67 шт
9 грн.
50+8,10 грн.
100+7,20 грн.
250+6,75 грн.
0.25 SMD 3Вт 2500pcs 18V SMB
23075 ON SEMICONDUCTOR 66 шт
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 8V2 do201
23093 ON SEMICONDUCTOR 66 шт
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 56V do201
26292 СНГ 61 шт
7 грн.
50+6,30 грн.
100+5,60 грн.
250+5,25 грн.
Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. 0.6 DIP 500мВт 50pcs 15V
26145 СНГ 56 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С 0.8 DIP 1Вт 200pcs 5V6 kd-8
23095 ON SEMICONDUCTOR 54 шт
4.40 грн.
50+3,96 грн.
100+3,52 грн.
250+3,30 грн.
1 DIP 5Вт 500pcs 68V do201
26116 СНГ 49 шт
3 грн.
50+2,70 грн.
100+2,40 грн.
250+2,25 грн.
Zener diodes KS170A silicon, alloy, two-anode, low power. Designed for use as a reference element in voltage stabilization circuits. The main technical parameters of the KS170A zener diode: • Rated stabilization voltage: 7 V at Ist 10 mA; • Stabilization voltage spread: 6.43... 7.59 V; • Temperature coefficient of stabilization voltage: ±0.01%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 20 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. 0.3 DIP 150мВт 200pcs 7V0
26305 СНГ 49 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. 0.5 DIP 500мВт 50pcs 31V
28867 СНГ 39 шт
6 грн.
50+5,40 грн.
100+4,80 грн.
250+4,50 грн.
Zener diodes KS510A are silicon, planar, medium power. Designed to stabilize a rated voltage of 10 V in the stabilization current range of 1...79 mA. 0.8 DIP 1Вт 100 pieces. 10V kd-8
23497 PHILIPS 36 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.3 DIP 1.3Вт 250pcs 3V3 DO-41
23073 ON SEMICONDUCTOR 24 шт
5.50 грн.
50+4,95 грн.
100+4,40 грн.
250+4,12 грн.
1 DIP 5Вт 500pcs 6V8 do201
20440 SEMTECH ELECTRONICS 20 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.2 DIP 1Вт 500pcs 6V8 DO-41
20223 Rectron Semiconductor 19 шт
1 грн.
50+0,90 грн.
100+0,80 грн.
250+0,75 грн.
Zener diode 6.8V 0.5W (BZX55C 6V8) 0.12 DIP 500мВт 500pcs 6V8 DO-35
23512 СНГ 15 шт
11 грн.
50+9,90 грн.
100+8,80 грн.
250+8,25 грн.
Zener diodes 2S600A silicon, planar, medium power. Designed to stabilize the rated voltage of 100 V in the stabilization current range of 1...8.1 mA. 0.8 DIP 1Вт 100 pieces. 100V kd-8
20458 SEMTECH ELECTRONICS 9 шт
2 грн.
50+1,80 грн.
100+1,60 грн.
250+1,50 грн.
0.2 DIP 1Вт 500pcs 39V DO-41
23085 ON SEMICONDUCTOR 9 шт
4 грн.
50+3,60 грн.
100+3,20 грн.
250+3 грн.
1 DIP 5Вт 500pcs 27V do201
26200 СНГ 8 шт
8 грн.
50+7,20 грн.
100+6,40 грн.
250+6 грн.
Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С 3.5 Screw 5Вт 100 pieces. 56V ks620
23074 ON SEMICONDUCTOR 5 шт
3.90 грн.
50+3,51 грн.
100+3,12 грн.
250+2,92 грн.
1 DIP 5Вт 500pcs 7V5 do201