zener diodes
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Power | Factory packaging | Stabilization voltage | Zener diode housing type |
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Zener diode BZX55C 13V
#4203
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20224 | Rectron Semiconductor | 160 шт |
1 грн.
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Zener diode 13V 0.5W (BZX55C 13V) | 0.12 | DIP | 500мВт | 500pcs | 13V | DO-35 | ||||||||
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Zener diode BZX55C 9V1
#4199
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20225 | Rectron Semiconductor | 143 шт |
1 грн.
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Zener diode 9.1V 0.5W (BZX55C 9V1) | 0.12 | DIP | 500мВт | 500pcs | 9V1 | DO-35 | ||||||||
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Zener diode BZX55C 5V6
#4193
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20211 | Rectron Semiconductor | 137 шт |
1 грн.
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Zener diode 5.6V 0.5W (BZX55C 5V6) | 0.12 | DIP | 500мВт | 500pcs | 5V6 | DO-35 | ||||||||
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Zener diode D818V
#12245
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24627 | СНГ | 126 шт |
4 грн.
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The main technical parameters of the Zener diode D818V: • Rated stabilization voltage: 9 V at Ist 10 mA; • Stabilization voltage spread: 7.6... 10 V; • Temperature coefficient of stabilization voltage: +0.010%/°С; • Temporary stabilization voltage instability: ± 0.12%; • Zener diode differential resistance: 18 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 33 mA; • Maximum allowable dissipated power on the Zener diode: 0.3 W; • Working range of ambient temperature: -60... +125 °С. | 0.8 | DIP | 300мВт | 100 pieces. | 9V | kd-8 | ||||||||
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Zener diode BZX55C 2V0
#4216
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20217 | Rectron Semiconductor | 123 шт |
1 грн.
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Zener diode 2.0V 0.5W (BZX55C 2V0) | 0.12 | DIP | 500мВт | 500pcs | 2V0 | DO-35 | ||||||||
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Zener diode KS222Zh
#10378
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22385 | СНГ | 123 шт |
3 грн.
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Silicon zener diode, planar, low power. | 0.2 | DIP | 125мВт | 100 pieces. | 22V | kd2 | ||||||||
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Zener diode BZX55C 3V0
#4186
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20201 | Rectron Semiconductor | 106 шт |
1 грн.
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Zener diode 3.0V 0.5W (BZX55C 3V0) | 0.12 | DIP | 500мВт | 500pcs | 3V0 | DO-35 | ||||||||
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Zener diode BZX55C 15V
#4204
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20218 | Rectron Semiconductor | 103 шт |
1 грн.
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Zener diode 15V 0.5W (BZX55C 15V) | 0.12 | DIP | 500мВт | 500pcs | 15V | DO-35 | ||||||||
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Zener diode BZX55C 30V
#4210
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20220 | Rectron Semiconductor | 91 шт |
1 грн.
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Zener diode 30V 0.5W (BZX55C 30V) | 0.12 | DIP | 500мВт | 500pcs | 30V | DO-35 | ||||||||
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Zener diode KS409A
#10108
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21847 | СНГ | 82 шт |
4 грн.
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Silicon zener diode, plenary, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 1...48 mA. | 0.2 | DIP | 340мВт | 200pcs | 5V6 | kd2 | ||||||||
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Zener diode D815V
#14017
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26196 | СНГ | 81 шт |
6 грн.
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Medium power silicon zener diode, 8.2V The main technical parameters of the Zener diode D815V: • Stabilization voltage spread: 7.4... 9.1 V at Ist 1 A; • Temperature coefficient of stabilization voltage: 0.07%/°С; • Temporary stabilization voltage instability: ± 4%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 1 ohm; • Minimum allowable stabilization current: 50 mA; • Maximum allowable stabilization current: 950 mA; • Maximum allowable power dissipation on the zener diode: 8 W; • Ambient temperature operating range: -60... +125 °С | 2.5 | Screw | 8Вт | 100 pieces. | 8V2 | ks620 | ||||||||
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Zener diode KS182Ts stack.
#11423
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23540 | СНГ | 75 шт |
3.80 грн.
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— | 0.2 | DIP | 125мВт | 500pcs | 8V2 | kd2 | ||||||||
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Zener diode 1SMB5931BT3G
#16285
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28532 | ON SEMICONDUCTOR | 67 шт |
9 грн.
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0.25 | SMD | 3Вт | 2500pcs | 18V | SMB | |||||||||
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Zener diode 1N5344B(8V2)
#11055
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23075 | ON SEMICONDUCTOR | 66 шт |
4.40 грн.
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1 | DIP | 5Вт | 500pcs | 8V2 | do201 | |||||||||
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Zener diode 1N5370B(56V)
#11076
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23093 | ON SEMICONDUCTOR | 66 шт |
4.40 грн.
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1 | DIP | 5Вт | 500pcs | 56V | do201 | |||||||||
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Zener diode KS515G
#14114
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26292 | СНГ | 61 шт |
7 грн.
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Zener diodes KS515G silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 15 V in the stabilization current range of 3 to 31 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS515G zener diode: • Rated stabilization voltage: 15 V at Ist 10 mA; • Stabilization voltage spread: 14.25... 15.75 V; • Temperature coefficient of stabilization voltage: 0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 25 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 31 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.6 | DIP | 500мВт | 50pcs | 15V | — | ||||||||
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Zener diode KS456A
#13965
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26145 | СНГ | 56 шт |
8 грн.
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Zener diodes KS456A silicon, diffusion-alloy, medium power. Designed to stabilize the nominal voltage of 5.6 V in the stabilization current range of 3...139 mA. The main technical parameters of the KS456A zener diode: • Rated stabilization voltage: 5.6 V at Ist 36 mA; • Stabilization voltage spread: 5.04... 6.16 V; • Temperature coefficient of stabilization voltage: 0...0.05%/°С; • Zener diode differential resistance: 10 Ohm at Ist 30 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 139 mA; • Maximum allowable dissipated power on the zener diode: 1 W; • Ambient temperature operating range: -60... +100 °С | 0.8 | DIP | 1Вт | 200pcs | 5V6 | kd-8 | ||||||||
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Zener diode 1N5373B(68V)
#11079
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23095 | ON SEMICONDUCTOR | 54 шт |
4.40 грн.
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1 | DIP | 5Вт | 500pcs | 68V | do201 | |||||||||
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Zener diode KS170A
#13937
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26116 | СНГ | 49 шт |
3 грн.
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Zener diodes KS170A silicon, alloy, two-anode, low power. Designed for use as a reference element in voltage stabilization circuits. The main technical parameters of the KS170A zener diode: • Rated stabilization voltage: 7 V at Ist 10 mA; • Stabilization voltage spread: 6.43... 7.59 V; • Temperature coefficient of stabilization voltage: ±0.01%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 20 Ohm at Ist 10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 20 mA; • Maximum allowable power dissipation on the zener diode: 0.15 W; • Working range of ambient temperature: -55... +100 °С. | 0.3 | DIP | 150мВт | 200pcs | 7V0 | — | ||||||||
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Zener diode KS531V
#14124
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26305 | СНГ | 49 шт |
6 грн.
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Zener diodes KS531V silicon, diffusion-alloy, medium power, precision. Designed to stabilize the nominal voltage of 31 V in the stabilization current range of 3 to 15 mA with high requirements for voltage stability in the temperature range of -60...+100 °C. The main technical parameters of the KS531V zener diode: • Rated stabilization voltage: 31 V at Ist 10 mA; • Stabilization voltage spread: 29.45... 32.55 V; • Temperature coefficient of stabilization voltage: ±0.005%/°С; • Temporary instability of the stabilization voltage of the zener diode: ±1.5%; • Zener diode differential resistance: 50 Ohm at Ist10 mA; • Minimum allowable stabilization current: 3 mA; • Maximum allowable stabilization current: 15 mA; • Maximum allowable power dissipation on the zener diode: 0.5 W; • Working range of ambient temperature: -60... +100 °С. | 0.5 | DIP | 500мВт | 50pcs | 31V | — | ||||||||
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Zener diode KS510A
#16629
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28867 | СНГ | 39 шт |
6 грн.
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Zener diodes KS510A are silicon, planar, medium power. Designed to stabilize a rated voltage of 10 V in the stabilization current range of 1...79 mA. | 0.8 | DIP | 1Вт | 100 pieces. | 10V | kd-8 | ||||||||
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Zener diode BZV85-C3V3
#11386
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23497 | PHILIPS | 36 шт |
2 грн.
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0.3 | DIP | 1.3Вт | 250pcs | 3V3 | DO-41 | |||||||||
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Zener diode 1N5342B(6V8)
#11053
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23073 | ON SEMICONDUCTOR | 24 шт |
5.50 грн.
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1 | DIP | 5Вт | 500pcs | 6V8 | do201 | |||||||||
| 20440 | SEMTECH ELECTRONICS | 20 шт |
2 грн.
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0.2 | DIP | 1Вт | 500pcs | 6V8 | DO-41 | ||||||||||
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Zener diode BZX55C 6V8
#4195
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20223 | Rectron Semiconductor | 19 шт |
1 грн.
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Zener diode 6.8V 0.5W (BZX55C 6V8) | 0.12 | DIP | 500мВт | 500pcs | 6V8 | DO-35 | ||||||||
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Zener diode 2S600A (=KS600A)
#11401
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23512 | СНГ | 15 шт |
11 грн.
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Zener diodes 2S600A silicon, planar, medium power. Designed to stabilize the rated voltage of 100 V in the stabilization current range of 1...8.1 mA. | 0.8 | DIP | 1Вт | 100 pieces. | 100V | kd-8 | ||||||||
| 20458 | SEMTECH ELECTRONICS | 9 шт |
2 грн.
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0.2 | DIP | 1Вт | 500pcs | 39V | DO-41 | ||||||||||
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Zener diode 1N5361B(27V)
#11068
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23085 | ON SEMICONDUCTOR | 9 шт |
4 грн.
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1 | DIP | 5Вт | 500pcs | 27V | do201 | |||||||||
| 26200 | СНГ | 8 шт |
8 грн.
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Medium power silicon zener diode, 56V The main technical parameters of the Zener diode D817A: • Stabilization voltage spread: 50.5... 61.5 V at Ist 50 mA; • Temperature coefficient of stabilization voltage: 0.14%/°С; • Temporary stabilization voltage instability: ± 6%; • Constant forward voltage: 1.5 V at Ipr 500 mA; • Zener diode differential resistance: 35 Ohm; • Minimum allowable stabilization current: 5 mA; • Maximum allowable stabilization current: 90 mA; • Maximum allowable power dissipation on the zener diode: 5 W; • Ambient temperature operating range: -60... +120 °С | 3.5 | Screw | 5Вт | 100 pieces. | 56V | ks620 | |||||||||
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Zener diode 1N5343B(7V5)
#11054
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23074 | ON SEMICONDUCTOR | 5 шт |
3.90 грн.
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1 | DIP | 5Вт | 500pcs | 7V5 | do201 |