Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Case diameter D, mm | Body length L, mm | Transistor type | Mounting type | Appointment | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Resistance | Resistor power | Accuracy | Resistor housing type |
|---|
| 26987 | СНГ | 9 шт |
2.50 грн.
|
|
Resistor MLT-2 6.8 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 6,8 кОм | — | 5 % | metal film | |||||||||
| 26984 | СНГ | 7 шт |
2.50 грн.
|
|
Resistor MLT-2 5.6 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 5,6 кОм | — | 5 % | metal film | |||||||||
| 26983 | СНГ | 1 шт |
2.50 грн.
|
|
Resistor MLT-2 3.3 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 3,3 кОм | — | 5 % | metal film | |||||||||
| 26981 | СНГ | 810 шт |
2.50 грн.
|
|
Resistor MLT-2 1.8 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 1,8 кОм | — | 5 % | metal film | |||||||||
| 26980 | СНГ | 12 шт |
2.50 грн.
|
|
Resistor MLT-2 1.3 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 1,3 кОм | — | 5 % | metal film | |||||||||
| 26979 | СНГ | 1 шт |
2.50 грн.
|
|
Resistor MLT-2 910 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 910 Ом | 2 W | 5 % | metal film | |||||||||
| 26977 | СНГ | 69 шт |
2.50 грн.
|
|
Resistor MLT-2 620 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 90pcs | — | — | — | — | 620 Ом | 2 W | 5 % | metal film | |||||||||
| 26976 | СНГ | 76 шт |
2.50 грн.
|
|
Resistor MLT-2 510 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 510 Ом | 2 W | 5 % | metal film | |||||||||
| 26970 | СНГ | 2 шт |
2.50 грн.
|
|
Resistor MLT-2 4.7 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 4,7 кОм | — | 5 % | metal film | |||||||||
| 26967 | СНГ | 9 шт |
2.50 грн.
|
|
Resistor MLT-2 8.2 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 8,2 Ом | 2 W | 5 % | metal film | |||||||||
| 26966 | СНГ | 1 шт |
2.50 грн.
|
|
Resistor MON-2 7.5 Ohm (+/-5%). | 2.5 | Flexible Leads | — | — | — | — | DIP | — | — | — | 200pcs | — | — | — | — | 7,5 Ом | 2 W | 5 % | metal film | |||||||||
| 26952 | СНГ | 15 шт |
2.50 грн.
|
|
Resistor MLT-2 910 Ohm (+/-10%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 910 Ом | 2 W | 10 % | metal film | |||||||||
| 26951 | СНГ | 1 шт |
2.50 грн.
|
|
Resistor MLT-2 270 kOhm (+/-10%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 270 кОм | — | 10 % | metal film | |||||||||
| 26947 | СНГ | 7 шт |
2.50 грн.
|
|
Resistor MLT-2 36 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 36 кОм | — | 5 % | metal film | |||||||||
| 26945 | СНГ | 258 шт |
2.50 грн.
|
|
Resistor MLT-2 750 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 90pcs | — | — | — | — | 750 Ом | 2 W | 5 % | metal film | |||||||||
| 26943 | СНГ | 406 шт |
2.50 грн.
|
|
Resistor MLT-2 1.0 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 1 кОм | — | 5 % | metal film | |||||||||
| 26942 | СНГ | 9 шт |
2.50 грн.
|
|
Resistor MLT-2 91 kOhm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 91 кОм | — | 5 % | metal film | |||||||||
| 26941 | СНГ | 6 шт |
2.50 грн.
|
|
Resistor MLT-2 1.5 Ohm (+/-5%). | 2.5 | Flexible Leads | — | 8 | 17 | — | DIP | — | — | — | 200pcs | — | — | — | — | 1,5 Ом | 2 W | 5 % | metal film | |||||||||
Transistor P216D
#14718
|
26936 | СНГ | 135 шт |
15 грн.
|
|
The main technical characteristics of the transistor P216D: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 50 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 15... 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 24Вт | 20pcs | 50В | 7,5A | 0,1МГц | 30 | — | — | — | — | ||||||||
Transistor P306A
#14717
|
26935 | СНГ | 266 шт |
15 грн.
|
|
Transistors P306A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 10Вт | 40pcs | 80В | 400мА | — | 35 | — | — | — | — | ||||||||
Transistor P216V
#14716
|
26934 | СНГ | 227 шт |
15 грн.
|
|
The main technical characteristics of the P216V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 30 | — | — | — | — | ||||||||
Transistor P216B
#14715
|
26933 | СНГ | 115 шт |
15 грн.
|
|
The main technical characteristics of the P216B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 10 | — | — | — | — | ||||||||
Transistor P216A
#14714
|
26932 | СНГ | 327 шт |
15 грн.
|
|
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 80 | — | — | — | — | ||||||||
Transistor P216
#14713
|
26931 | СНГ | 179 шт |
15 грн.
|
|
Transistors P216 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 20 | — | — | — | — | ||||||||
Transistor P214
#14712
|
26930 | СНГ | 230 шт |
15 грн.
|
|
The main technical characteristics of the P214 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...60; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 10Вт | 20pcs | 55В | 5А | 0,15МГц | 60 | — | — | — | — | ||||||||
Transistor P213B
#14711
|
26929 | СНГ | 65 шт |
15 грн.
|
|
The main technical characteristics of the P213B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 40; • Rke us - Saturation resistance between collector and emitter: no more than 1.25 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 10Вт | 20pcs | 30В | 5А | 0,15МГц | 40 | — | — | — | — | ||||||||
Transistor P213
#14710
|
26928 | СНГ | 232 шт |
15 грн.
|
|
The main technical characteristics of the transistor P213: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50; • Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm. | 10 | — | — | — | — | Bipolar | DIP | — | PNP | 11,5Вт | 20pcs | 40В | 5А | 0,15МГц | 50 | — | — | — | — | ||||||||
Chip K1102AP16
#14709
|
26927 | СНГ | 1 шт |
8 грн.
|
|
Dual high-speed pulse shaper with direct and inverse output. | 0.5 | — | DIP8 | — | — | — | DIP | Logics | — | — | 200pcs | — | — | — | — | — | — | — | — | ||||||||
| 26923 | СНГ | 10824 шт |
1 грн.
|
|
Resistor C2-23-0.5 620 Ohm (+/-5%). | 0.5 | Flexible Leads | — | — | — | — | DIP | — | — | — | 2000pcs | — | — | — | — | 620 Ом | 0.5 W | 5 % | metal film | |||||||||
| 26922 | СНГ | 9839 шт |
1 грн.
|
|
Resistor C2-23-0.5 6.8 Ohm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | DIP | — | — | — | 2000pcs | — | — | — | — | 6,8 Ом | 0.5 W | 10 % | metal film |
