Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Type of shell | Working voltage, V | Case diameter D, mm | Body length L, mm | Transistor type | Mounting type | Appointment | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Resistance | Resistor power | Accuracy | Resistor housing type |
|---|
Transistor P306A
#14717
|
26935 | СНГ | 266 шт |
15 грн.
|
|
Transistors P306A germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 10Вт | 40pcs | 80В | 400мА | — | 35 | — | — | — | — | — | ||||||||
Transistor P216V
#14716
|
26934 | СНГ | 227 шт |
15 грн.
|
|
The main technical characteristics of the P216V transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Reverse collector current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 2 mA; • h21Э - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 30; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 30 | — | — | — | — | — | ||||||||
Transistor P216B
#14715
|
26933 | СНГ | 115 шт |
15 грн.
|
|
The main technical characteristics of the P216B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 24 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 35 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 10; • Rke us - Saturation resistance between collector and emitter: no more than 0.25 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 24Вт | 20pcs | 30В | 7,5A | 0,1МГц | 10 | — | — | — | — | — | ||||||||
Transistor P216A
#14714
|
26932 | СНГ | 327 шт |
15 грн.
|
|
The main technical characteristics of the P216A transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 30 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.1 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 40 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 7.5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.5 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20... 80; • Rke us - Saturation resistance between collector and emitter: no more than 0.2 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 80 | — | — | — | — | — | ||||||||
Transistor P216
#14713
|
26931 | СНГ | 179 шт |
15 грн.
|
|
Transistors P216 germanium alloy structures pnp universal. Designed for use in switching devices, output stages of low-frequency amplifiers, DC voltage converters. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 30Вт | 20pcs | 40В | 7,5A | 0,1МГц | 20 | — | — | — | — | — | ||||||||
Transistor P214
#14712
|
26930 | СНГ | 230 шт |
15 грн.
|
|
The main technical characteristics of the P214 transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 60 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.3 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...60; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 10Вт | 20pcs | 55В | 5А | 0,15МГц | 60 | — | — | — | — | — | ||||||||
Transistor P213B
#14711
|
26929 | СНГ | 87 шт |
15 грн.
|
|
The main technical characteristics of the P213B transistor: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 10 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 10 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter output: no more than 1 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: more than 40; • Rke us - Saturation resistance between collector and emitter: no more than 1.25 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 10Вт | 20pcs | 30В | 5А | 0,15МГц | 40 | — | — | — | — | — | ||||||||
Transistor P213
#14710
|
26928 | СНГ | 252 шт |
15 грн.
|
|
The main technical characteristics of the transistor P213: • Transistor structure: pnp • Рк t max - Constant power dissipation of the collector with a heat sink: 11.5 W; • fh21e - Limiting frequency of the current transfer coefficient of the transistor for circuits with a common emitter: not less than 0.15 MHz; • Ukbo samples - Breakdown voltage collector-base at a given reverse collector current and open emitter circuit: 45 V; • Uebo samples - Emitter-base breakdown voltage at a given emitter reverse current and collector open circuit: 15 V; • Ik max - Maximum allowable DC collector current: 5 A; • Ikbo - Collector reverse current - current through the collector junction at a given collector-base reverse voltage and an open emitter terminal: no more than 0.15 mA; • h21E - Static current transfer coefficient for a circuit with a common emitter in a large signal mode: 20...50; • Rke us - Saturation resistance between collector and emitter: no more than 0.16 Ohm. | 10 | — | — | — | — | — | Bipolar | DIP | — | — | PNP | 11,5Вт | 20pcs | 40В | 5А | 0,15МГц | 50 | — | — | — | — | — | ||||||||
Chip K1102AP16
#14709
|
26927 | СНГ | 1 шт |
8 грн.
|
|
Dual high-speed pulse shaper with direct and inverse output. | 0.5 | — | DIP8 | — | — | — | — | DIP | Logics | — | — | — | 200pcs | — | — | — | — | — | — | — | — | — | ||||||||
| 26923 | СНГ | 10824 шт |
1 грн.
|
|
Resistor C2-23-0.5 620 Ohm (+/-5%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 620 Ом | 0.5 W | 5 % | metal film | |||||||||
| 26922 | СНГ | 9839 шт |
1 грн.
|
|
Resistor C2-23-0.5 6.8 Ohm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 6,8 Ом | 0.5 W | 10 % | metal film | |||||||||
| 26921 | СНГ | 1956 шт |
1 грн.
|
|
Resistor C2-23-0.5 510 Ohm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 510 Ом | 0.5 W | 10 % | metal film | |||||||||
| 26920 | СНГ | 4180 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.5 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 1000pcs | — | — | — | — | 390pF | — | — | 10 % | — | |||||||||
| 26919 | СНГ | 35 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.5 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 300pcs | — | — | — | — | 22nF (0.022µF) | — | — | +80-20% | — | |||||||||
| 26918 | СНГ | 117 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.5 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 500pcs | — | — | — | — | 10nF (0.01µF) | — | — | +50% -20% | — | |||||||||
| 26917 | СНГ | 298 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.4 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 500pcs | — | — | — | — | 1.5nF (1500pF) | — | — | +50% -20% | — | |||||||||
| 26916 | СНГ | 5316 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.5 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 1000pcs | — | — | — | — | 820pF | — | — | 10 % | — | |||||||||
| 26915 | СНГ | 1956 шт |
1 грн.
|
|
Capacitors ceramic single-layer, constant capacity. Are intended for work in chains of direct and alternating currents and in pulsed modes. The case design is insulated rectangular with unidirectional pinout. | 0.5 | Flexible Leads | — | 50 | — | — | — | DIP | — | — | — | — | 1000pcs | — | — | — | — | 620pF | — | — | 10 % | — | |||||||||
| 26914 | СНГ | 1969 шт |
0.50 грн.
|
|
Resistor C2-23-0.25 4.7 MΩ (+/-10%). | 0.12 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2500pcs | — | — | — | — | — | 4,7 МОм | 0.25 W | 10 % | metal film | |||||||||
| 26913 | СНГ | 1733 шт |
1 грн.
|
|
Resistor C2-23-0.5 100 Ohm (+/-5%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 100 Ом | 0.5 W | 5 % | metal film | |||||||||
| 26912 | СНГ | 3861 шт |
1 грн.
|
|
Resistor C2-23-0.5 100 Ohm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 100 Ом | 0.5 W | 10 % | metal film | |||||||||
| 26911 | СНГ | 9639 шт |
0.50 грн.
|
|
Resistor C2-23-0.125W 33 kOhm (+/-5%). | 0.2 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2500pcs | — | — | — | — | — | 33 кОм | — | 5 % | metal film | |||||||||
| 26910 | СНГ | 9884 шт |
0.50 грн.
|
|
Resistors MLT-0.25 permanent metal-film lacquered heat-resistant. | 0.2 | Flexible Leads | — | — | 2.5 | 7 | — | DIP | — | — | — | — | 2500pcs | — | — | — | — | — | 5,1 МОм | 0.25 W | 5 % | metal film | |||||||||
| 26909 | СНГ | 1974 шт |
1 грн.
|
|
Resistor C2-23-0.5 270 kOhm (+/-5%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 270 кОм | 0.5 W | 5 % | metal film | |||||||||
| 26908 | СНГ | 8087 шт |
1 грн.
|
|
Resistor C2-23-0.5 270 kOhm (+/-10%). | 0.5 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 270 кОм | 0.5 W | 10 % | metal film | |||||||||
Varicap KV122A
#14688
|
26905 | СНГ | 34 шт |
3 грн.
|
The main technical parameters of the KV122A varicap: • Sd min - Minimum total capacitance: 2.3 pF at Uobr 25 V; • Sd max - Maximum total capacitance: 2.8 pF at Uobr 25 V; • Qв - Quality factor of the varicap: 450; • Iobr - Constant reverse current: 0.2 μA at Uobr 28 V. | 0.06 | — | — | — | — | — | — | DIP | — | Varicap | — | — | 20pcs | — | — | — | — | — | — | — | — | — | |||||||||
| 26904 | СНГ | 9387 шт |
0.50 грн.
|
|
Resistor C2-23-0.25 100 Ohm (+/-5%). | 0.12 | Flexible Leads | — | — | — | — | — | DIP | — | — | — | — | 2500pcs | — | — | — | — | — | 100 Ом | 0.25 W | 5 % | metal film | |||||||||
| 26884 | СНГ | 9154 шт |
1 грн.
|
|
Resistor C2-23-0.5 3.9 Ohm (+/-10%). Dimensions: 10x4 mm, Dout=0.8 mm. | 0.5 | Flexible Leads | — | — | 4 | 10 | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 3,9 Ом | 0.5 W | 10 % | metal film | |||||||||
| 26883 | СНГ | 10337 шт |
1 грн.
|
|
Resistor MLT-0.5 240 Ohm (+/-5%). | 0.5 | Flexible Leads | — | — | 4 | 10 | — | DIP | — | — | — | — | 2000pcs | — | — | — | — | — | 240 Ом | 0.5 W | 5 % | metal film | |||||||||
| 26882 | СНГ | 395 шт |
1.50 грн.
|
|
Resistor MLT-1 20 kOhm (+/-5%) 1W. | 1.1 | Flexible Leads | — | — | 6 | 12 | — | DIP | — | — | — | — | 500pcs | — | — | — | — | — | 20 кОм | 1 W | 5 % | metal film |
