Diodes domestic
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Diode bridges domestic
Triacs
Domestic thyristors
Domestic zener diodes
Microcircuits are imported
Domestic microcircuits
Domestic transistors
Domestic optocouplers
Sensors
Varicaps
radio tubes
Domestic electrolytic capacitors
High voltage ceramic capacitors
Ceramic Capacitors
Domestic film capacitors
Metal-paper capacitors
Trimmer capacitors
Glass fuses
Ceramic fuses
Fuse holders
0.125 W
0.25 W
0.4-0.6 W
1 W
2 W
5 - 20 W
25-150W
Pens
joint venture
Variables
Thermistors
Resistor assemblies
HC49
HC6U
UB-UE
K1-4
Filters
Contactors
Domestic relays
Domestic
Switches, buttons
Transformers, chokes
Shunts
Varistors
Dischargers
LEDs
LED and LCD indicators
Fixtures
Sound
Electric motors
cores, magnets
Radio Kits
Corps
Finished goods
Devices
fasteners
miscellanea
Brand «СНГ»
| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Pin type | Rated capacity, μF | Working voltage, V | Rated capacity tolerance,% | Working temperature, С | Case diameter D, mm | Body length L, mm | Transistor case type | Transistor type | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Structure | Power | Factory packaging | Collector-emitter voltage | Collector current | Frequency | Current gain | Capacity | Resistance | Resistor power | Accuracy | Resistor housing type | Stabilization voltage | Zener diode housing type | Working current, A | Material | Plug or socket | Number of contacts | Mechanical installation | Type | Diode design |
|---|
Transistor P608A
#16948
|
29195 | СНГ | — |
20 грн.
|
|
— | Universal germanium transistor of pnp structure. Designed for use in amplifier, generator and pulse stages of low and high frequency up to 90 MHz. | 9.2 | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 1.5Вт | 50pcs | 30В | 600мА | 90МГц | 240 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor P303A
#16927
|
29174 | СНГ | — |
20 грн.
|
|
— | Transistors P303A silicon alloy structure pnp universal. Intended for use in switching devices, output stages of low-frequency amplifiers, DC-DC converters. | 9.2 | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 10Вт | 50pcs | 65В | 500мА | 0,1МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 1T403G (=GT403G)
#16925
|
29172 | СНГ | — |
25 грн.
|
|
— | Transistor 1T403G germanium alloy structure pnp amplifying. Designed for use in switching devices, output stages of low-frequency amplifiers, converters and DC stabilizers. | 3 | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | PNP | 4Вт | 100 pieces. | 45В | 1,25А | — | 150 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T608A (=KT608A)
#16892
|
29139 | СНГ | — |
25 грн.
|
|
— | Main technical characteristics of the 2T608A transistor: • Transistor structure: npn; • Рк max - Continuous dissipated power of the collector: 0.5 W; • fgr - Cutoff frequency of the current transfer coefficient of the transistor for a circuit with a common emitter: not less than 200 MHz; • Uкбо max - Maximum collector-base voltage at a given collector reverse current and open emitter circuit: 60 V; • Uebo max - Maximum emitter-base voltage at a given emitter reverse current and open collector circuit: 4 V; • Iк max - Maximum permissible direct collector current: 400 mA; • Iк and max - Maximum permissible collector pulse current: 800 mA; • Iкбо - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 10 μA (60 V); • h21э - Static current transfer coefficient of the transistor for circuits with a common emitter: 25...80; • Ck - Collector junction capacitance: no more than 15 pF; • Rke sat - Saturation resistance between collector and emitter: no more than 2.5 Ohm | 1.8 | — | — | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 2T608B (=KT608B)
#16891
|
29138 | СНГ | — |
25 грн.
|
|
— | Transistors 2T608B silicon epitaxial-planar structures npn switching. Designed for use in high-speed pulse and high-frequency devices. | 1.5 | — | — | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | NPN | 500мВт | 100 pieces. | 60В | 400мА | 200МГц | 160 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor 1T311D (=GT311D)
#16887
|
29134 | СНГ | — |
14 грн.
|
|
— | Bipolar germanium transistor 1T311D, npn, low power, ultra-high frequency. | 1.2 | — | — | — | — | — | — | — | — | Bipolar | DIP | — | — | — | — | — | NPN | 150мВт | 100 pieces. | 12В | 50мА | 300МГц | 180 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Thyristor 2U101A (=KU101A)
#16883
|
29129 | СНГ | — |
10 грн.
|
— | Silicon thyristors 2U101A, diffusion-alloy, p-type, triode, non-locking. Designed for use as switching elements. Main technical parameters of thyristor 2U101A: • Maximum continuous reverse voltage: 10 V; • Maximum DC voltage in closed state: 50 V; • Maximum repetitive pulse current in open state: 1 A; • Average pulse current in open state: 0.075 A; • Voltage in open state: no more than 2.5 V; • Direct current in closed state: not less than 0.15 mA; • Continuous reverse current: no more than 0.15 mA; • Triggering direct control current: no more than 12 mA; • Constant unlocking control voltage: 1.5...8 V; • Voltage rise rate in closed state: 100 V/μs; • Turn-on time: 2 µs; • Switch-off time: 35 µs. | 1.8 | — | — | — | — | — | — | — | — | — | DIP | — | 50V | — | 1A | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 29083 | СНГ | — |
4 грн.
|
|
— | Resistor C2-29V-0.25 100 kOhm (+/- 0.25%). Dimensions: 11x4 mm, Dout=0.8 mm. | 0.5 | Flexible Leads | — | — | — | — | 4 | 11 | — | — | DIP | — | — | — | — | — | — | — | 60pcs | — | — | — | — | — | 100 кОм | 0.25 W | 0,2 % | metal film | — | — | — | — | — | — | — | — | — | ||||||||||
| 29075 | СНГ | — |
4 грн.
|
|
— | Resistor C2-29V-0.25 12 Ohm (+/-0.25%). Dimensions: 11x4 mm, Dout=0.8 mm. | 0.5 | Flexible Leads | — | — | — | — | 4 | 11 | — | — | DIP | — | — | — | — | — | — | — | 60pcs | — | — | — | — | — | 12 Ом | 0.25 W | 0,2 % | metal film | — | — | — | — | — | — | — | — | — | ||||||||||
Connector RG1N-1-3
#16652
|
28891 | СНГ | — |
80 грн.
|
|
— | Volumetric mounting connectors RG1N-1-3 are designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) and pulsed current with voltage up to 400 V. | 3.7 | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 8 | To the body | RG | — | |||||||||
Connector RG1N-1-5
#16650
|
28919 | СНГ | — |
30 грн.
|
|
— | Volumetric mounting connectors RG1N-1-5 are designed for operation in electrical circuits of direct, alternating (frequency up to 3 MHz) and pulsed current with voltage up to 400 V. | 6.5 | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 50pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | Socket | 16 | To the body | RG | — | |||||||||
| 28870 | СНГ | — |
6 грн.
|
|
— | Capacitors K53-7V oxide-semiconductor tantalum non-polar. They are produced in cylindrical metal sealed cases with multi-directional wire leads. Designed to work as built-in elements of internal installation of equipment in DC, pulsating current circuits and in pulse mode. They are used in special-purpose products, on-board and ground-based communication equipment, and devices that require increased stability of electrical parameters. | 1 | Flexible Leads | 0,1 | 32 | 30 | -60...+85 | 3.5 | 18 | — | — | DIP | — | — | — | — | — | — | — | 400pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT816G
#16628
|
28866 | СНГ | — |
15 грн.
|
|
— | Transistor KT816G silicon mesa-epitaxial-planar structure pnp amplifier. | 0.7 | — | — | — | — | — | — | — | TO126 | Bipolar | DIP | — | — | — | — | — | PNP | 25Вт | 200pcs | 100В | 3А | 3МГц | 25 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Diode D220A
#16627
|
28865 | СНГ | — |
2 грн.
|
|
— | Main technical characteristics of the D220A diode: • Uobp max - Maximum constant reverse voltage: 70 V; • Inp max - Maximum forward current: 50 mA; • Inp and max - Maximum pulse forward current: 0.5 A; • SD - Total capacitance: 15 pF at Uobp 5 V; • Unp - Constant forward voltage: no more than 1.5 V at Inp 50 mA; • Iobp - Constant reverse current: no more than 1 µA at Uobp 70 V. | 0.3 | — | — | — | — | — | — | — | — | — | DIP | D104 | 70V | 50mA | — | Rectifier | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
| 28859 | СНГ | — |
5 грн.
|
— | K73-17 polyethylene terephthalate protected capacitors. Designed for operation of built-in elements inside complete products in DC, AC and pulse modes. | 7 | Flexible Leads | — | 160 | — | — | — | — | — | — | DIP | — | — | — | — | — | — | — | 25pcs | — | — | — | — | 1.5µF | — | — | 20 % | — | — | — | — | — | — | — | — | — | — | |||||||||||
Transistor KT602A
#16535
|
28784 | СНГ | — |
25 грн.
|
|
— | Main technical characteristics of the KT602A transistor: • Transistor structure: npn; • Рк max - Constant collector power dissipation: 0.85 W; • Рк and max - Maximum permissible pulsed power dissipation of the collector: 2.8 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 150 MHz; • Ukbo max - Maximum collector-base voltage at a given collector reverse current and emitter open circuit: 120 V; • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 5 V; • Iк max - Maximum permissible direct collector current: 75 mA; • Iк and max - Maximum permissible pulse current of the collector: 500 mA; • Ikbo - Reverse collector current - current through the collector junction at a given reverse collector-base voltage and open emitter terminal: no more than 70 μA; • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: 20... 80; • Ск - Capacitance of the collector junction: no more than 4 pF; • Rke us - Saturation resistance between collector and emitter: no more than 4 Ohms; • tk - Time constant of the feedback circuit at high frequency: no more than 300 ps. | 3 | — | — | — | — | — | — | — | КТЮ-3-9 | Bipolar | DIP | — | — | — | — | — | NPN | 2.8Вт | 100 pieces. | 100В | 500мА | 150МГц | 80 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Zener diode 2S107A OS
#16529
|
28777 | СНГ | — |
12 грн.
|
|
— | Main technical parameters of the zener diode 2S107A: • Rated stabilization voltage: 0.7 V at Ist 10 mA; • Temperature coefficient of stabilization voltage: -0.34%/°C; • Minimum permissible stabilization current: 1 mA; • Maximum permissible stabilization current: 120 mA; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 300мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | 1V3 | kd-8 | — | — | — | — | — | — | — | |||||||||
Zener diode 2S113A OS
#16528
|
28776 | СНГ | — |
6 грн.
|
|
— | Main technical parameters of stabistor 2S113A: • Rated stabilization voltage: 1.3 V at Ist 10 mA; • Stabilization voltage spread: 1.17... 1.43 V; • Temperature coefficient of stabilization voltage: -0.42...-0.2%/°C; • Temporary instability of stabilization voltage: ±3.5%; • Differential resistance: 15 Ohm at Ist 7.5 mA; • Maximum permissible stabilization current: 100 mA; • Maximum permissible power dissipation: 0.16 W; • Operating range of ambient temperature: -60... +125 °C. | 0.8 | — | — | — | — | — | — | — | — | — | DIP | — | — | — | — | — | — | 160 мВт | 100 pieces. | — | — | — | — | — | — | — | — | — | 1V3 | kd-8 | — | — | — | — | — | — | — | |||||||||
| 28774 | СНГ | — |
6 грн.
|
|
— | Fuses (fuse links) are designed to break the electrical circuit if the current in the circuit exceeds a predetermined one. | 3.2 | — | — | 600 | — | — | 8 | 50 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | 3.15 | Glass | — | — | — | — | — | ||||||||||
Fuse PC-30, 20 A, 250 V
#16524
|
28772 | СНГ | — |
5 грн.
|
|
— | Fuses (fuse links) are designed to break the electrical circuit if the current in the circuit exceeds a predetermined one. | 2 | — | — | 250 | — | — | 7 | 30 | — | — | DIP | — | — | — | — | — | — | — | 1000pcs | — | — | — | — | — | — | — | — | — | — | — | 20 | Glass | — | — | — | — | — | |||||||||
| 28770 | СНГ | — |
10 грн.
|
|
— | Niobium oxide semiconductor capacitors K53-4AV, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of the K53-4 series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 3.5 | Flexible Leads | 47 | 20 | 20 | -60..+85 | 7 | 16 | — | — | DIP | — | — | — | — | — | — | — | 100 pieces. | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Diode D226E
#16519
|
28767 | СНГ | — |
4 грн.
|
|
— | Main technical characteristics of the D226G diode: • Uobp max - Maximum constant reverse voltage: 200 V; • Inp max - Maximum forward current: 300 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - Constant forward voltage: no more than 1 V at Inp 300 mA; • Iobp - Constant reverse current: no more than 50 µA at Uobp 200 V. | 2 | — | — | — | — | — | — | — | — | — | DIP | КД-8 | 200V | 300mA | — | Rectifier | — | — | 200pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | single | |||||||||
Transistor 2T812B (=KT812B)
#16518
|
28766 | СНГ | — |
70 грн.
|
|
— | Main technical characteristics of transistor 2T812B: • Transistor structure: npn; • Pk t max - Constant power dissipation of the collector with heat sink: 50 W; • fgr - Cutoff frequency of the transistor current transfer coefficient for a circuit with a common emitter: not less than 3 MHz; • Uкеr max - Maximum collector-emitter voltage at a given collector current and a given resistance in the base-emitter circuit: 300 V (0.1 kOhm); • Uebo max - Maximum emitter-base voltage at a given reverse emitter current and open collector circuit: 7 V; • Iк max - Maximum permissible direct collector current: 8 A; • Iк and max - Maximum permissible pulse current of the collector: 12 A; • Iker - Reverse collector-emitter current at a given reverse collector-emitter voltage and resistance in the base-emitter circuit: 5 mA (700V); • h21e - Static current transfer coefficient of the transistor for circuits with a common emitter: more than 4; • Rke us - Saturation resistance between collector and emitter: no more than 0.3 Ohm. | 15 | — | — | — | — | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | — | NPN | 50Вт | 40pcs | 300В | 10А | 3МГц | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor KT834B
#16517
|
28765 | СНГ | — |
200 грн.
|
|
— | KT834A transistors are silicon mesaplanar npn composite amplifier structures. Designed for use in current and voltage regulators, in switching devices. | 15 | — | — | — | — | — | — | — | TO3 | Bipolar | DIP | — | — | — | — | — | NPN | 100Вт | 20pcs | 450В | 20А | 4МГц | 3000 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
| 28738 | СНГ | — |
1.50 грн.
|
|
— | Resistor MLT-1 200 Ohm (+/-10%). | 1.2 | Flexible Leads | — | — | — | — | 6 | 12 | — | — | DIP | — | — | — | — | — | — | — | 500pcs | — | — | — | — | — | 200 Ом | 1 W | 10 % | metal film | — | — | — | — | — | — | — | — | — | ||||||||||
Optothyristor TO125-12.5-10
#16481
|
28730 | СНГ | — |
170 грн.
|
— | Thyristor TO125-12.5-10 optocoupler, low-frequency, silicon, diffusion, pnpn structure, flange design. Designed for operation in DC and AC circuits with a frequency of up to 500 Hz and a current of no more than 12.5 A. It consists of a silicon photothyristor and a gallium arsenide emitting diode and has a control circuit connected to the power circuit only by a light beam in the absence of galvanic coupling. | 17 | — | — | — | — | — | — | — | — | — | DIP | — | 1000V | 12.5А | — | — | — | — | 20pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
| 28729 | СНГ | — |
7 грн.
|
|
— | Niobium oxide semiconductor capacitors K53-4AV, polar, sealed in a metal case. Designed for operation in DC and pulsating current circuits. Features of the K53-4AV series capacitors: low and stable leakage currents, large specific capacitance values, improved temperature-frequency characteristics of the capacitance and dielectric loss tangent. | 1.5 | Flexible Leads | 10 | 20 | 10 | -60..+85 | 4 | 13 | — | — | DIP | — | — | — | — | — | — | — | 180pcs | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | — | ||||||||||
Transistor KT321V
#16476
|
28725 | СНГ | — |
6 грн.
|
|
— | KT321V silicon transistors, epitaxial-planar pnp pulse structures. Designed for use in pulse amplifiers and switching devices. | 1.5 | — | — | — | — | — | — | — | КТЮ-3-6 | Bipolar | DIP | — | — | — | — | — | PNP | 210мВт | 100 pieces. | 50В | 200мА | 60МГц | 200 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor GT321G
#16472
|
28722 | СНГ | — |
10 грн.
|
|
— | GT321G transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | — | — | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 60 | — | — | — | — | — | — | — | — | — | — | — | — | — | — | |||||||||
Transistor GT321E
#16471
|
28721 | СНГ | — |
10 грн.
|
|
— | GT321E transistors are germanium conversion pnp switching structures. Designed for use in switching devices. | 1.8 | — | — | — | — | — | — | — | КТЮ-3-3 | Bipolar | DIP | — | — | — | — | — | PNP | 150мВт | 100 pieces. | 45В | 200мА | 60МГц | 200 | — | — | — | — | — | — | — | — | — | — | — | — | — | — |
