Diodes, bridges
Filter layout:
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| MPN | Article | Brand | In stock | Price | Discounts | Quantity | Description | Weight g. | Mounting type | Type of shell | Urev. max, V | Ipr. max. | Ipr. imp. max. | Diode type | Power | Factory packaging | Diode design |
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Diode bridge KTS405A
#13933
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26112 | СНГ | 14 шт |
8 грн.
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Diode bridge 1A 600V | 5.2 | DIP | — | 600V | 1A | — | Diode bridge | — | 500pcs | — | |||||||||
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Diode D101 flat terminals
#15803
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28040 | СНГ | 14 шт |
3 грн.
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Diodes D101 silicon, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.9 | DIP | — | 75V | 30mA | — | Rectifier | — | 500pcs | single | ||||||||
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Diode D247
#16189
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28434 | СНГ | 14 шт |
40 грн.
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The main technical characteristics of the diode D247: • Uopp max - Maximum direct reverse voltage: 500 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 500 V. | 13 | Screw | КДЮ-11 | 500V | 10A | — | Rectifier | — | 50pcs | single | ||||||||
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Diode D215A
#17038
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29288 | СНГ | 14 шт |
35 грн.
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Main technical characteristics of the D215A diode: • Uobp max - Maximum constant reverse voltage: 200 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1.0 V at Inp 10 A; • Iobr - Continuous reverse current: no more than 3000 µA at Uobr 200 V. | 13 | Screw | КДЮ-11 | 200V | 10A | — | Rectifier | — | 50pcs | single | ||||||||
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Diode HER108 MIC
#1030
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22451 | MIC | 13 шт |
1 грн.
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0.3 | DIP | DO-41 | 1000V | 1A | — | Fast | — | 1000pcs | single | |||||||||
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Diode P600B (6A, 100V)
#16135
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28374 | DIOTEC SEMICONDUCTOR | 12 шт |
6 грн.
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100V 6A | 1.8 | DIP | R-6 | 100V | 6A | — | Rectifier | — | 1000pcs | single | ||||||||
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Diode 2D201G (=KD201G)
#12957
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25228 | СНГ | 11 шт |
40 грн.
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Diodes 2D201G silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 200V | 10A | 15A | Rectifier | — | 40pcs | single | ||||||||
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Diode P600G (6A, 400V)
#16136
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28375 | DIOTEC SEMICONDUCTOR | 11 шт |
8 грн.
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400V 6A | 1.8 | DIP | R-6 | 400V | 6A | — | Rectifier | — | 1000pcs | single | ||||||||
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Diode KD203G
#16186
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28431 | СНГ | 11 шт |
50 грн.
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Diodes KD203G silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 5 kHz. The main technical characteristics of the diode KD203G: • Uopp max - Maximum direct reverse voltage: 700 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 10 A; • Iobr - Constant reverse current: no more than 1500 μA at Uobr 1000 V. | 13 | Screw | — | 700V | 10A | — | Rectifier | — | 25pcs | single | ||||||||
| 29387 | Central Semiconductor Corp | 9 шт |
14 грн.
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0.1 | SMD | DO-214AC, SMA | 40V | 1A | — | Schottky | — | 5000pcs | single | ||||||||||
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Diode 2D201A (=KD201A)
#12955
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25226 | СНГ | 8 шт |
25 грн.
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Diodes 2D201A silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. | 13 | Screw | КДЮ-11 | 100V | 5A | 15A | Rectifier | — | 40pcs | single | ||||||||
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Diode 2D230B (=KD230B)
#3406
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23309 | СНГ | 6 шт |
10 грн.
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90 г. | 5.2 | Screw | КД-11 | 600V | 3.0A | — | Rectifier | — | 100 pieces. | single | ||||||||
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Diode 2D204A (=KD204A)
#10728
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25434 | СНГ | 6 шт |
15 грн.
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Designed to convert alternating voltage with a frequency of up to 50 kHz. The main technical characteristics of the diode 2D204A: • Uobr and max - Maximum impulse reverse voltage: 400 V; • Inp max - Maximum forward current: 400 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.4 V at Inp 600 mA; • Iobr - DC reverse current: no more than 150 µA at Uobr 400 V; • tvoc - Reverse recovery time: 1.5 µs | 5 | Screw | КД-11 | 400V | 400mA | — | Rectifier | — | 50pcs | single | ||||||||
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Diode D242
#16190
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28435 | СНГ | 6 шт |
30 грн.
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The main technical characteristics of the diode D242: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.25 V at Inp 10 A; • Iobr - Constant reverse current: no more than 3000 µA at Uobr 100 V. | 13 | Screw | КДЮ-11 | 100V | 10A | — | Rectifier | — | 50pcs | single | ||||||||
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Diode FMP-3FU (=FMP-G3F)
#1023
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20974 | SANKEN | 5 шт |
34 грн.
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800V*10A*100W, two in series diode | 6.5 | DIP | TO-3PF | 1500V | 10A | — | Damper | 100Вт | 30pcs | 2 diodes in series | ||||||||
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Diode D104
#8887
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28397 | СНГ | 5 шт |
3 грн.
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The main technical characteristics of the diode D104: • Uopp max - Maximum direct reverse voltage: 100 V; • Inp max - Maximum forward current: 30 mA; • fd - Operating frequency of the diode: 150 kHz; • Unp - DC forward voltage: no more than 2 V at Inp 2 mA; • Iobr - Constant reverse current: no more than 5 μA at Uobr 100 V; • tvoc arr - Reverse recovery time: 0.5 µs; • Sd - Total capacitance: 0.7 pF at Uobr 1 V. | 0.5 | DIP | D104 | 100V | 30mA | — | Pulse | — | 100 pieces. | single | ||||||||
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Diode MUR1640 (=U1640G)
#10440
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22454 | ON SEMICONDUCTOR | 5 шт |
13 грн.
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2.5 | DIP | TO-220 | 400V | 16A | — | Fast | — | 50pcs | double common cathode | |||||||||
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Diode BY500-200
#16179
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28453 | DIOTEC SEMICONDUCTOR | 5 шт |
10 грн.
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0.6 | DIP | DO-201AD | 200V | 5A | — | Fast | — | 1000pcs | single | |||||||||
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Diode D245B
#16620
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28858 | СНГ | 5 шт |
28 грн.
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Main technical characteristics of the D245B diode: • Uobp max - Maximum constant reverse voltage: 300 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - Constant forward voltage: no more than 1.5 V at Inp 5 A; • Iobp - Constant reverse current: no more than 3000 µA at Uobp 300 V. | 13 | Screw | — | 300V | 5A | — | Rectifier | — | 20pcs | single | ||||||||
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Diode bridge RS207
#9019
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20569 | SEP | 4 шт |
5 грн.
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Diode bridge 1000V, 2A. | 1.5 | DIP | — | 1000V | 2A | — | — | — | 500pcs | — | ||||||||
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Diode MD217
#13707
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25870 | СНГ | 4 шт |
5 грн.
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Diodes MD217 silicon, diffusion. Are issued in the glass-to-metal case with flexible conclusions. The main technical characteristics of the diode MD217: • Uopp max - Maximum direct reverse voltage: 800 V; • Inp max - Maximum forward current: 100 mA; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1 V at Inp 100 mA; • Iobr - Constant reverse current: no more than 50 μA at Uobr 800 V. | 1 | DIP | КД-9 | 800V | 100mA | — | Rectifier | — | 100 pieces. | single | ||||||||
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Diode bridge KTS402A
#13710
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25874 | СНГ | 4 шт |
30 грн.
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Block of silicon, diffusion diodes. The main technical characteristics of the diode KTS402A: • Uobr and max - Maximum impulse reverse voltage: 600 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 µA at Uobr 600 V. | 5.7 | DIP | — | 600V | 1A | — | Diode bridge | — | 100 pieces. | — | |||||||||
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Diode KD204V
#17235
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29488 | СНГ | 4 шт |
10 грн.
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Main technical characteristics of the KD204V diode: • Uop and max - Maximum pulse reverse voltage: 50 V; • Inp max - Maximum forward current: 1000 mA; • fd - Diode operating frequency: 1 kHz; • Unp - Continuous forward voltage: no more than 1.4 V at Inp 600 mA; • Iop - Continuous reverse current: no more than 50 µA at Uop 50 V; • treverse - Reverse recovery time: 1.5 µs. | 5 | Screw | КД-11 | 50V | 1A | — | Rectifier | — | 50pcs | single | ||||||||
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Diode D101A Au
#11889
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24142 | СНГ | 3 шт |
10 грн.
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Diodes silicon D101A, point, universal. Designed to work in TV video channels, in AGC systems and discriminators of FM and AM receivers. | 0.4 | DIP | D104 | 75V | 30mA | — | High frequency | — | 100 pieces. | single | ||||||||
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Diode bridge KTS405G
#14127
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26308 | СНГ | 3 шт |
7 грн.
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The main technical characteristics of the KTs405G diode: • Uopp max - Maximum direct reverse voltage: 300 V; • Inp max - Maximum forward current: 1000 mA; • fd - Operating frequency of the diode: 5 kHz; • Unp - DC forward voltage: no more than 4 V at Inp 1000 mA; • Iobr - Constant reverse current: no more than 125 μA at Uobr 300 V. | 5.2 | DIP | — | 300V | 1A | — | Diode bridge | — | 500pcs | — | |||||||||
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Avalanche diode DL112-25-10
#16201
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28447 | СНГ | 3 шт |
80 грн.
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6 | Cooler | — | 1000V | 25A | — | Avalanche | — | — | — | |||||||||
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Diode BY359X-1500
#4318
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20985 | PHILIPS | 2 шт |
24 грн.
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Diode 10A, 1500V, 470ns | 1.8 | DIP | TO-220F | 1500V | 10A | — | Damper | — | 50pcs | single | ||||||||
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Diode 8EWS12S
#8986
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20555 | VISHAY | 2 шт |
22 грн.
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0.7 | SMD | DPAK;TO-252 | 1200V | 8A | — | Rectifier | — | 1000pcs | single | |||||||||
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Diode D248B
#13782
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25961 | СНГ | 2 шт |
30 грн.
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Diodes D248B silicon, diffusion. Designed to convert alternating voltage with a frequency of up to 1.1 kHz. The main technical characteristics of the diode D248B: • Uopp max - Maximum direct reverse voltage: 600 V; • Inp max - Maximum forward current: 5 A; • fd - Operating frequency of the diode: 1.1 kHz; • Unp - DC forward voltage: no more than 1.5 V at Inp 5 A; • Iobr - Constant reverse current: no more than 3000 μA at Uobr 600 V. | 12 | Screw | — | 600V | 5A | — | Rectifier | — | 25pcs | single | ||||||||
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Diode KD206A
#14251
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26450 | СНГ | 2 шт |
25 грн.
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Diode KD206A silicon, mesa-diffusion, avalanche, rectifier. Designed to convert alternating voltage with a frequency of up to 20 kHz. The main technical characteristics of the KD206A diode: • Uopp max - Maximum direct reverse voltage: 400 V; • Inp max - Maximum forward current: 10 A; • fd - Operating frequency of the diode: 1 kHz; • Unp - DC forward voltage: no more than 1.2 V at Inp 1000 mA; • Iobr - DC reverse current: no more than 700 µA at Uobr 400 V; • tvoc - Reverse recovery time: 10 µs. | 5.7 | Screw | КД-11 | 400V | 10A | — | Rectifier | — | 100 pieces. | single |